JP2009158506A - Light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device reduced in size while it is provided with an optical detection element on its mounting substrate, and outputting a high optical output. <P>SOLUTION: The light emitting device is provided with: an LED chip 1 wherein electrodes 11 and 12 are formed on both surfaces in the direction of width; and a mounting substrate 2 to which the LED chip 1 is mounted. The mounting substrate 2 includes: a lower substrate 20 which is made of metallic material and wherein a mount part 21 for mounting the LED chip 1 is projected from its one surface side; and an upper substrate 30 which is made of a semiconductor material and is arranged on the one surface side of the lower substrate 20 and wherein a window hole 31 with a mount part 21 arranged inside is penetrated in the direction of thickness. The upper substrate 30 is provided with a wall section 2b which is projected from a base substrate (base substrate section) 320 with the window hole 31, surrounding the LED chip 1, and an optical detection element 4 is provided in a jutting section 2c jutting out inside from the tip of the wall section 2b to detect light emitted from the LED chip 1. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

  Conventionally, an LED chip, a drive circuit unit that drives the LED chip, a light detection element that detects the light output of the LED chip, and a drive circuit so that the output of the light detection element is maintained at a preset target value. There has been proposed an illumination device including a control circuit unit that feedback-controls the current flowing from the unit to the LED chip (see, for example, Patent Document 1).

  Here, in Patent Document 1, as shown in FIG. 11, a plurality of types of LED chips 101a, 101b, 101c having different emission colors are mounted on the inner bottom surface of a housing recess 102a formed on one surface of the mounting substrate 102. In addition, a transparent resin layer 103 for sealing the LED chips 101a, 101b, and 101c is provided on the one surface side of the mounting substrate 102 so as to cover the LED chips 101a, 101b, and 101c. Discloses a light emitting device in which a light detection element forming substrate 106 on which light detection elements 104a, 104b, and 104c formed of photodiodes that detect light emitted from the LED chips 101a, 101b, and 101c are formed is disposed.

  In the light emitting device having the configuration shown in FIG. 11, the transparent resin layer 103 has a function of guiding a part of the light emitted from the LED chips 101a, 101b, and 101c to the light detection elements 104a, 104b, and 104c. Thus, the thickness dimension of the transparent resin layer 103 is set. In the light emitting device having the configuration shown in FIG. 11, the three spectral filters 105a, 105b, and 105c that selectively transmit light in the wavelength regions of the emission colors of the LED chips 101a, 101b, and 101c are provided for the light detection elements. 104a, 104b, and 104c are provided alternatively on the light receiving surface side, and light of each LED chip 101a, 101b, and 101c in the wavelength region of the emission color is simultaneously and three times detected by the three photodetectors 104a, 104b, and 104c. It can be detected separately. Therefore, in the illuminating device including the light emitting device having the configuration shown in FIG. 11, the control circuit unit feedback-controls each of the currents flowing from the drive circuit unit to the LED chips 101a, 101b, and 101c. Regardless of the change in the light output of the LED chips 101a, 101b, and 101c over time, the mixed color light of a desired light color and color temperature (for example, the light emission color of the LED chip 101a is red, the light emission color of the LED chip 101b is green, If the emission color of the LED chip 101c is blue, white light can be obtained.

  Further, in the above-mentioned Patent Document 1, the drive circuit unit is arranged by the control circuit unit so that the period in which the LED chip 101a emits light, the period in which the LED chip 101b emits light, and the period in which the LED chip 101c emits light appear in time series. A technique is also disclosed in which the light output of a plurality of types of LED chips 101a, 101b, and 101c having different emission colors is individually detected by a single light detection element by being controlled.

Further, in Patent Document 1, as shown in FIG. 12, the LED chip 101 having the same emission color is mounted on the inner bottom surface of each storage recess 102a formed on one surface of the mounting substrate 102, and the mounting substrate 102 is also mounted. There has also been proposed a light-emitting device having a configuration in which the light detection element 104 is mounted on the one surface of the above and each LED chip 101 and the light detection element 104 are covered with a transparent resin layer 103.
JP 2002-344031 A

  However, as shown in FIG. 12, the light detection element 104 is mounted on the one surface of the mounting substrate 102 in which the housing recess 102 a for housing the LED chip 101 is formed on one surface, and the LED chip 101 is formed by the transparent resin layer 103. In the light-emitting device configured to cover the light detection element 104, it is necessary to separately secure a space for arranging the light detection element 104 on the one surface of the mounting substrate 102. This increases the mounting area on a circuit board such as a printed circuit board.

  Further, Patent Document 1 describes that a silicon substrate is used as the mounting substrate 102 and the light detection element 104 is formed on the mounting substrate 102. However, when a silicon substrate is used as the mounting substrate 102, It is necessary to limit the input power to the LED chip 101 so that the heat dissipation is lower than when a metal substrate is used and the junction temperature of the LED chip 101 does not exceed the maximum junction temperature. It was difficult to convert.

  The present invention has been made in view of the above reasons, and an object of the present invention is to provide a light emitting device that can be downsized and can have a high optical output while providing a light detection element on a mounting substrate. It is in.

  The invention of claim 1 includes an LED chip having electrodes formed on both surfaces in the thickness direction and a mounting substrate on which the LED chip is mounted, and the mounting substrate is formed using a metal material and mounts the LED chip. A lower substrate with a mounting portion projecting on one surface side, and a window hole formed using a semiconductor material and disposed with the mounting portion on the inner side are arranged in the thickness direction and arranged on the one surface side of the lower substrate. The upper substrate has a wall portion protruding from the base substrate portion in which the window hole is formed so as to surround the LED chip, and protrudes inward from the front end side of the wall portion. A light detection element for detecting light emitted from the LED chip is provided on the overhanging portion.

  According to the present invention, the mounting substrate is formed using a metal material, the lower substrate on which the mounting portion for mounting the LED chip is protruded on the one surface side, and the mounting portion is formed on the inner side formed using the semiconductor material. And an upper substrate disposed on the one surface side of the lower substrate, and the upper substrate surrounds the LED chip from the base substrate portion in which the window holes are formed. Since the light detection element for detecting the light emitted from the LED chip is provided on the overhanging portion that protrudes inward from the front end side of the wall portion, the light detection element Can be miniaturized while mounting on the mounting substrate, and the heat generated by the LED chip can be efficiently dissipated to the outside through the lower substrate made of a metal material, enabling high light output. Become.

  According to a second aspect of the present invention, in the first aspect of the invention, the lower substrate is formed of the metal material, the metal plate having an outer size set larger in plan view than the upper substrate, and the metal material. The mount projecting on one surface of the metal plate, an insulating layer formed on the one surface of the metal plate, and a pad electrically connected to the metal plate through a contact hole formed in the insulating layer And a wiring pattern formed on an insulating layer and electrically connected to each of the LED chip and the light detection element.

  According to the present invention, the lower substrate can be used as a wiring substrate.

  According to a third aspect of the present invention, in the first or second aspect of the present invention, the metal material is Cu.

  According to this invention, it is possible to dissipate the heat generated in the LED chip to the outside more efficiently by adopting Cu having a high thermal conductivity among the metal materials as the metal material.

  According to a fourth aspect of the present invention, in the first to third aspects of the invention, the upper substrate is formed by using the first semiconductor substrate in which the base substrate portion is made of the semiconductor material, and the wall portion is A second semiconductor substrate made of the semiconductor material and the third semiconductor substrate made of the semiconductor material are formed, and a part of light emitted from the LED chip is reflected on the second semiconductor substrate. A mirror is formed, and the light detection element is formed in a portion of the third semiconductor substrate which becomes the overhanging portion.

  According to the present invention, the wall portion is formed using the second semiconductor substrate made of the semiconductor material and the third semiconductor substrate made of the semiconductor material, and the second semiconductor substrate is formed from the LED chip. Since a mirror that reflects a part of the emitted light is formed and the photodetecting element is formed in a portion that becomes the overhanging portion in the third semiconductor substrate, the outside of the light emitted from the LED chip The light extraction efficiency to the light detector can be increased, and the light collection efficiency to the light detection element can be increased.

  According to a fifth aspect of the present invention, in the first to fourth aspects of the invention, the upper substrate has a back-side bonding metal layer for bonding to the wiring pattern of the lower substrate formed on the lower substrate side, A through-hole wiring for electrically connecting the LED chip and each of the light detection elements and the back surface-side bonding metal layer is formed.

  According to the present invention, compared to the case where the wiring for electrically connecting the LED chip and each of the photodetecting elements and the backside bonding metal layer in the upper substrate is routed along the surface of the upper substrate, The size of the upper substrate can be reduced.

  According to a sixth aspect of the present invention, in the first to fifth aspects of the present invention, the light intensity detected by the drive circuit unit for driving the LED chip and the light detection element is maintained at a preset target value. As described above, the control circuit unit for controlling the current supplied from the drive circuit unit to the LED chip is integrated on the upper substrate.

  According to the present invention, the light emitting device including the drive circuit unit and the control circuit unit can be downsized as compared with the case where the drive circuit unit and the control circuit unit are provided on a substrate different from the mounting substrate.

  According to a seventh aspect of the present invention, in the first to sixth aspects of the invention, the LED chip includes a plurality of LED chips having different emission colors, and the LED of each emission color is used as the light detection element on the upper substrate. It is characterized by comprising a plurality of photodetecting elements that individually detect light emitted from each chip.

  According to the present invention, it becomes possible to individually control the light output of the LED chip of each emission color based on the output of each light detection element, and it becomes possible to stably obtain desired mixed color light. .

  According to the first aspect of the invention, it is possible to reduce the size while providing the light detection element on the mounting substrate, and to increase the light output.

(Embodiment 1)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.

  The light emitting device according to the present embodiment stores one LED chip 1 that emits visible light (for example, red light, green light, blue light, and the like) and a storage recess 2a that stores the LED chip 1 formed on one surface. A mounting substrate 2 in which the LED chip 1 is mounted on the inner bottom surface of the recess 2a, and a translucent member 3 fixed to the mounting substrate 2 so as to close the housing recess 2a on the one surface side of the mounting substrate 2; The light detection element 4 provided on the mounting substrate 2 for detecting the light emitted from the LED chip 1 and the light-transmitting sealing material (for example, silicone resin, acrylic resin) filled in the housing recess 2a of the mounting substrate 2 The sealing part 5 which consists of resin, glass, etc. and which sealed the LED chip 1 and the bonding wire 14 connected to the said LED chip 1 is provided. In the present embodiment, the package is constituted by the mounting substrate 2 and the translucent member 3, but the translucent member 3 is not necessarily provided, and may be appropriately provided as necessary.

  By the way, the light-emitting device of this embodiment uses what the electrodes 11 and 12 were formed in both surfaces of the thickness direction as the LED chip 1, and the mounting substrate 2 is formed using a metal material (for example, Cu). A lower substrate 20 in which a mount portion 21 on which the LED chip 1 is mounted protrudes on one surface side, and a window hole 31 that is formed using a semiconductor material (for example, Si) and in which the mount portion 21 is disposed inside is in the thickness direction. And an upper substrate 30 disposed on the one surface side of the lower substrate 20.

  The upper substrate 30 is provided with a base substrate 320 in which the above-described window holes 31 are formed, a circular light extraction window 341 disposed on one surface side of the base substrate 320, and a light detection element 4. The light detection element formation substrate 340 and the intermediate layer substrate 330 formed with a rectangular opening window 331 that is interposed between the base substrate 320 and the light detection element formation substrate 340 and communicates with the light extraction window 341. The space surrounded by the base substrate 320, the mount portion 21, the intermediate layer substrate 330, and the light detection element formation substrate 340 constitutes the housing recess 2a. Here, the outer peripheral shapes of the base substrate 320, the intermediate layer substrate 330, and the light detection element formation substrate 340 are rectangular, and the intermediate layer substrate 330 and the light detection element formation substrate 340 are formed to have the same outer dimensions as the base substrate 320. Yes. Further, the thickness dimension of the light detection element forming substrate 340 is set smaller than the thickness dimension of the base substrate 320 and the intermediate layer substrate 330.

  In the present embodiment, the base substrate 320 constitutes a base substrate portion in which the window holes 31 are formed, and the intermediate layer substrate 330 and the light detection element formation substrate 340 protrude from the base substrate portion so as to surround the LED chip 1. The portion of the light detection element forming substrate 340 that protrudes above the opening window 331 of the intermediate layer substrate 330 constitutes the protruding portion 2c that protrudes inward from the front end side of the wall portion 2b. is doing.

  The base substrate 320, the intermediate layer substrate 330, and the light detection element formation substrate 340 described above are each formed using silicon substrates 320a, 330a, and 340a having an n-type conductivity and a (100) plane main surface. The inner surface of the intermediate layer substrate 330 is constituted by a (111) surface formed by anisotropic etching using an alkaline solution (for example, a TMAH solution, a KOH solution, etc.) (that is, the intermediate layer substrate 330). (The opening area of the opening window 331 gradually increases as the distance from the base substrate 320 increases), and constitutes a mirror 2d that reflects light emitted from the LED chip 1 forward. In short, in the present embodiment, the intermediate layer substrate 330 also serves as a frame-like reflector that reflects light emitted from the LED chip 1 to the side to the front. In addition, if a metal film made of a metal material (for example, Al, Ag, etc.) having a high reflectance with respect to the light emitted from the LED chip 1 is provided on the inner surface of the intermediate layer substrate 330, the light from the LED chip 1 is transmitted. Reflection can be performed with high efficiency. In this case, the surface of the metal film constitutes the mirror 2d.

  The base substrate 320 is electrically connected to the electrode 11 on the surface (upper surface in FIG. 1) side of the LED chip 1 on one surface (main surface) side of the silicon substrate 320a (hereinafter referred to as the first silicon substrate 320a). Conductor pattern 325a is formed, and two conductor patterns 325b and 325b that are electrically connected to the photodetecting element 4 through two through-hole wirings 334 and 334, which will be described later, formed on the intermediate layer substrate 330. Each of the conductor patterns 325a, 325b, and 325b and the three back-side bonding metal layers 327a, 327b, and 327b formed on the other surface side of the first silicon substrate 320a form the through-hole wiring 324, respectively. Is electrically connected. The base substrate 320 is also formed with a bonding metal layer 329 for bonding to the intermediate layer substrate 330 on the one surface side of the first silicon substrate 320a.

  By the way, in the base substrate 320, three through holes 322 in which the above-described three through-hole wirings 324 are respectively formed and the above-described window holes 31 are provided in the thickness direction in the first silicon substrate 320a. An insulating film 323 (hereinafter referred to as a first oxide film) made of a thermal oxide film (silicon oxide film) straddling the one surface and the other surface of the first silicon substrate 20a, the inner surface of each through hole 322, and the inner surface of the window hole 31. The conductive patterns 325a, 325b, and 325b, the bonding metal layer 329, the backside bonding metal layers 327a, 327b, and 327b, the through-hole wiring 324, and the mount portion 21 are formed. Is electrically insulated from the first silicon substrate 320a. Note that the first insulating film 323 is not limited to a thermal oxide film, and may be, for example, a silicon oxide film formed by a sputtering method, a CVD method, or the like.

  Here, each conductor pattern 325a, 325b, 325b, joining metal layer 329, and each back side joining metal layer 327a, 327b, 327b are Ti film formed on the first insulating film 323 and the Ti film. It is composed of a laminated film with the Au film formed thereon, and is formed at the same time. Further, the Ti film and the Au film are continuously formed in the same apparatus. In this embodiment, the thickness of the Ti film on the first insulating film 323 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are examples. There is no particular limitation. Further, the material of each Au film is not limited to pure gold, and may be one added with impurities. In addition, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the first insulating film 323, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr TiN, TaN, etc. may be used. Moreover, although Cu is adopted as the material of the through-hole wiring 324, it is not limited to Cu, and for example, Ni may be adopted.

  The intermediate layer substrate 330 is joined to the two conductor patterns 327b and 327b of the base substrate 320 on one surface side (the lower surface side in FIG. 1) of the silicon substrate 330a (hereinafter referred to as the second silicon substrate 330a). The two conductive patterns 335 and 335 that are connected to each other are formed, and the bonding metal layer 336 to be bonded to the bonding metal layer 329 of the base substrate 320 is formed. Further, the intermediate layer substrate 330 is a conductor pattern electrically connected to the conductor patterns 335 and 335 via the through-hole wirings 334 and 334 on the other surface side (the upper surface side in FIG. 1) of the second silicon substrate 330a. 337 and 337 are formed, and a bonding metal layer 338 for bonding to the light detection element formation substrate 340 is formed.

  Further, in the intermediate layer substrate 330, two through holes 332 in which the above-described two through hole wirings 334 are respectively formed are penetrated in the thickness direction of the second silicon substrate 330a. An insulating film 333 (hereinafter referred to as a second insulating film 333) made of a thermal oxide film (silicon oxide film) is formed across the one surface and the other surface and the inner surface of each through-hole 332. Conductive patterns 335, 335, 337, and 337 and bonding metal layers 336 and 338 are electrically insulated from second silicon substrate 330a. Here, each of the conductor patterns 335, 335, 337, 337 and each of the bonding metal layers 336, 338 includes a Ti film formed on the second insulating film 333 and an Au film formed on the Ti film. It is composed of a laminated film and is formed at the same time. Further, the Ti film and the Au film are continuously formed in the same apparatus. In this embodiment, the thickness of the Ti film on the second insulating film 333 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are examples. There is no particular limitation. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. Further, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the second insulating film 333, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr TiN, TaN, etc. may be used. Further, although Cu is adopted as the material of the through-hole wiring 334, it is not limited to Cu, and for example, Ni may be adopted.

  The light detection element formation substrate 340 is bonded to the two conductor patterns 337 and 337 of the intermediate layer substrate 330 on one surface side (the lower surface side in FIG. 1) of the silicon substrate 340a (hereinafter referred to as a third silicon substrate 340a). Thus, two conductive patterns 347a and 347b that are electrically connected are formed, and a bonding metal layer 348 bonded to the bonding metal layer 338 of the intermediate layer substrate 330 is formed. Here, the light detection element 4 described above is configured by a photodiode, and one of the two conductor patterns 347 a and 347 b formed on the light detection element formation substrate 340 constitutes the light detection element 4. The other conductive pattern 347b is electrically connected to the third silicon substrate 340a constituting the n-type region 4b of the photodiode.

  The photodetecting element formation substrate 340 includes an insulating film 343 made of a silicon oxide film (hereinafter referred to as a third insulating film 343) on the one surface side of the third silicon substrate 340a. 3 insulating film 343 also serves as an antireflection film of the photodiode. Further, in the light detection element forming substrate 340, the one conductor pattern 347a is electrically connected to the p-type region 4a through a contact hole 343a formed in the third insulating film 343, and the other conductor pattern 347b is connected to the first conductor pattern 347b. 3 is electrically connected to the n-type region 4b through a contact hole 343b formed in the insulating film 343. Here, each of the conductor patterns 347a and 347b and the bonding metal layer 348 is composed of a laminated film of a Ti film formed on the third insulating film 343 and an Au film formed on the Ti film. Are formed at the same time. Further, the Ti film and the Au film are continuously formed in the same apparatus. In this embodiment, the thickness of the Ti film on the third insulating film 343 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are examples. There is no particular limitation. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. In addition, although a Ti film is interposed as an adhesion layer for improving adhesion between each Au film and the third insulating film 343, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr TiN, TaN, etc. may be used.

  On the other hand, the above-described lower substrate 20 is formed of the metal material (Cu or the like) having a higher thermal conductivity than the semiconductor material (Si), and has a rectangular plate shape whose outer size in plan view is set larger than that of the upper substrate 30. Formed on the one surface of the metal plate 20a, the mount portion 21 formed of the metal material and projecting on one surface side (the upper surface side in FIG. 1) of the metal plate 20a. An insulating layer 22 made of a silicon oxide film (hereinafter referred to as a first insulating layer 22) and an insulating layer 23 made of a silicon oxide film (hereinafter referred to as a lower surface in FIG. 1) formed on the other surface (the lower surface in FIG. 1). A second insulating layer 23), a pad 24 electrically connected to the metal plate 20 a through a contact hole 22 a formed in the first insulating layer 22, and a base formed on the first insulating layer 22. The wiring pattern 25 joined to the backside bonding metal layer 327a of the plate 320 and electrically connected to the LED chip 1, and the backside joining metal layer 327b of the base substrate 320 formed on the first insulating layer 22. , 327b and wiring patterns 26, 26 electrically connected to the light detecting element 4. Here, the mount portion 21 is formed in a truncated pyramid shape, and the opening area of the window hole 31 of the upper substrate 30 gradually decreases as the distance from the metal plate 20a increases. Each wiring pattern 25, 26, 26 and pad 24 is composed of a laminated film of a Ti film formed on the first insulating layer 22 and an Au film formed on the Ti film. It is formed. Further, the Ti film and the Au film are continuously formed in the same apparatus. In this embodiment, the thickness of the Ti film on the first insulating layer 21 is set to 15 to 50 nm, and the thickness of the Au film on the Ti film is set to 500 nm. However, these numerical values are examples. There is no particular limitation. Here, the material of each Au film is not limited to pure gold, and may be added with impurities. Further, although a Ti film is interposed as an adhesion improving layer for adhesion between each Au film and the first insulating layer 22, the material of the adhesion layer is not limited to Ti, for example, Cr, Nb, Zr TiN, TaN, etc. may be used.

  The LED chip 1 in this embodiment is a visible light LED chip in which electrodes 11 and 12 are formed on both surfaces in the thickness direction using a conductive substrate as a crystal growth substrate, and the back surface side electrode 12 is mounted on the lower substrate 20. For example, a conductive bonding material such as AuSn is bonded to and electrically connected to the portion 21, and the surface-side electrode 11 is electrically connected to the conductor pattern 325 a of the base substrate 320 via the bonding wire 14. . Therefore, in the LED chip 1, the electrode 11 on the front surface side is electrically connected to the wiring pattern 25 on the lower substrate 20, and the electrode 12 on the back surface side is electrically connected to the pad 24 on the lower substrate 20. The wiring pattern 25 of the lower substrate 20 is extended to a region that does not overlap with the upper substrate 30.

  Moreover, the above-mentioned translucent member 3 is formed using the translucent board | substrate which consists of translucent materials (for example, silicone, an acrylic resin, glass, etc.). Here, the translucent member 3 is formed in a rectangular plate shape having the same outer peripheral shape as the upper substrate 30 in the mounting substrate 2, and is emitted from the LED chip 1 to the light extraction surface opposite to the mounting substrate 2 side. A fine concavo-convex structure that suppresses total reflection of light is formed. Here, the fine concavo-convex structure formed on the light extraction surface of the translucent member 3 is formed such that many fine concave portions have a two-dimensional periodic structure. The fine concavo-convex structure described above may be formed using, for example, a laser processing technique, an etching technique, an imprint lithography technique, or the like. The period of the fine concavo-convex structure may be set as appropriate within a range of about ¼ to 100 times the emission peak wavelength of the LED chip 1.

  Hereinafter, a method for manufacturing the above-described light emitting device will be described with reference to FIGS.

  First, an insulating layer forming step is performed in which the insulating layers 22 and 23 are formed on the respective surfaces of the metal plate (Cu plate) 20a of FIG. 4A serving as the basis of the lower substrate 20 by sputtering or CVD. Thus, the structure shown in FIG.

  Thereafter, by using a photolithography technique and an etching technique, an insulating layer patterning that removes portions corresponding to the formation planned regions of the mount part 21 and the pad 24 in the first insulating layer 22 on the one surface side of the metal plate 21 is removed. By performing the process, the structure shown in FIG. The etching in the insulating layer patterning step may be wet etching or dry etching.

  After the insulating layer patterning step, a wiring pattern forming step for forming the pad 24 and the wiring patterns 25, 26, 26 on the one surface side of the metal plate 20a is performed using a thin film forming technique, a lithography technique, and an etching technique. As a result, the structure shown in FIG.

  Next, a structure shown in FIG. 5B is obtained by performing a through hole forming process in which each through hole 322 is formed by dry etching in the first silicon substrate 320a of FIG. Get. In the through hole forming step, the through holes 322 are simultaneously formed using an inductively coupled plasma (ICP) type dry etching apparatus or the like.

  After the through hole forming step, the structure shown in FIG. 5C is obtained by performing the window hole forming step of forming the window hole 31 in the first silicon substrate 320a using the photolithography technique and the etching technique. . In the present embodiment, since the mount portion 21 is set in the shape of a truncated pyramid, the window hole 31 is formed by anisotropic etching using an alkaline solution (eg, TMAH solution, KOH solution, etc.) in the window hole forming step. However, when the shape of the mount portion 21 is set to a truncated cone shape, the window hole 31 may be formed by a sandblast method in the window hole forming step.

  After the window hole forming step, a silicon oxide film is formed on the one surface side of the first silicon substrate 320a, the other surface side, the inner peripheral surface of each through hole 322, and the inner peripheral surface of the window hole 31, for example, by thermal oxidation. By performing the insulating film forming step for forming the first insulating film 323, the structure shown in FIG. 5D is obtained.

  Thereafter, a through-hole wiring forming process for forming the through-hole wiring 324 inside each through-hole 322 of the first silicon substrate 320a using a plating method or the like is performed, thereby obtaining the structure shown in FIG. .

  Next, using the thin film forming technique, the lithography technique, and the etching technique, the back-side bonding metal layer 327a, 327b, 327b is formed on the other surface side of the first silicon substrate 320a. By performing the steps, the structure shown in FIG.

  Here, the steps up to the back surface-side bonding metal layer forming step are completed until the back surface-side bonding metal layers 327a, 327b, 327b on the other surface side of the first silicon substrate 320a and the wiring pattern forming step described above. A structure shown in FIG. 6A is obtained by performing a bonding process between different kinds of substrates for bonding the wiring patterns 25, 26, and 26 on the one surface side of the metal plate 20a after the process is completed. In the bonding process between different types of substrates, the bonding surfaces are contacted with each other after the bonding surfaces are cleaned and activated by irradiating the bonding surfaces with argon plasma, ion beam or atomic beam in vacuum before bonding. However, the bonding method using a low-melting eutectic material such as AuSn or solder may be employed without being limited to the room temperature bonding method. By performing the heterogeneous substrate bonding step, the backside bonding metal layers 327a, 327b, 327b on the other surface side of the first silicon substrate 320a and the wiring pattern 25 on the one surface side of the metal plate 20a, 26 and 26 are electrically connected. Note that the steps of FIGS. 4A to 4D and the steps of FIGS. 5A to 5F may be performed in parallel.

  After the dissimilar substrate bonding step described above, the mount portion 21 is formed so that the inside of the window hole 31 of the first silicon substrate 320a is embedded by, for example, plating, and the exposed surface of the mount portion 21 is formed by CMP or the like. The structure shown in FIG. 6B is obtained by performing the mount forming process for polishing to a smooth surface.

  After the mounting portion forming step described above, a metal layer forming step for forming the respective conductor patterns 325a, 325b, 325b and the bonding metal layer 329 on the one surface side of the first silicon substrate 320a is performed as shown in FIG. The structure shown in (c) is obtained.

  After the above-described mount formation process, a die bonding process is performed in which the LED chip 1 is bonded to and electrically connected to the mount 21 to obtain the structure shown in FIG. In the present embodiment, the mount portion 21 is formed by plating as described above. However, the mount portion 21 may be formed by performing mechanical processing on the flat metal plate 20a. In this case, a die bonding step may be performed after performing a dissimilar substrate bonding step for bonding the lower substrate 20 on which the mount portion 21 is formed and the base substrate 320 to each other.

  After the die-bonding process, a wire bonding process is performed in which the electrode 12 of the LED chip 1 and the conductor pattern 325a of the base substrate 320 are connected by the bonding wire 14, and then the light detection element 4, the third insulating film 343, and each conductor After performing the first semiconductor substrate-to-substrate bonding step for bonding the third silicon substrate 340a on which the patterns 347a and 347b and the bonding metal layer 348 are formed and the intermediate layer substrate 330, the third silicon substrate 340a is bonded to the third silicon substrate 340a. A polishing step for polishing to a desired thickness is performed, and then a light extraction window forming step for forming a light extraction window 341 on the third silicon substrate 340a using an ICP type dry etching apparatus or the like is performed, thereby forming a light detection element. After the substrate 340 is completed, the second semiconductor substrate bonding is performed to bond the base substrate 320 and the intermediate layer substrate 330 together. The mounting substrate 2 is completed by performing the steps, and subsequently, a sealing portion forming step of filling the housing recess 2a of the mounting substrate 2 with a sealing material to form the sealing portion 5, and a sealing portion forming step A light emitting device having a structure shown in FIG. 6E is obtained by performing a third joining step for joining the mounting substrate 2 and the translucent member 3 later. In the first semiconductor substrate bonding step and the second semiconductor substrate bonding step, each bonding surface is irradiated with argon plasma, an ion beam, or an atomic beam in vacuum before the bonding. After activation, the bonding surfaces are brought into contact with each other and directly bonded at room temperature. The room temperature bonding method is used, but not limited to the room temperature bonding method, a low melting point eutectic material such as AuSn or solder is used. A joining method may be adopted. In the first inter-semiconductor substrate bonding step, the bonding metal layer 348 of the third silicon substrate 340a and the bonding metal layer 338 of the intermediate layer substrate 330 are bonded, and the conductor of the third silicon substrate 340a. The patterns 347a and 347b and the conductor patterns 337 and 337 of the intermediate layer substrate 330 are joined and electrically connected. Here, if the joint portions of the conductor patterns 347a and 347b and the conductor patterns 337 and 337 are shifted from the region overlapping the through-hole wiring 334, the conductor patterns 347a and 347b and the conductor patterns 337 and 337 are joined to each other. The flatness of the surface can be increased, the junction yield can be increased, and the junction reliability can be increased. In the second inter-semiconductor substrate bonding step, the bonding metal layer 329 of the base substrate 320 and the bonding metal layer 336 of the intermediate layer substrate 330 are bonded, and the conductor patterns 325b and 325b of the base substrate 320 are intermediate to each other. The conductor patterns 335 and 335 of the layer substrate 330 are joined and electrically connected. Here, if the joint portions of the conductor patterns 325b and 325b and the conductor patterns 335 and 335 are shifted from the region overlapping the through-hole wiring 324 and the region overlapping the through-hole wiring 334, the conductor patterns 325b and 325b and the conductor pattern The flatness of the bonding surfaces of 335 and 335 can be increased, the bonding yield can be increased, and the bonding reliability can be increased.

  In manufacturing the light emitting device according to the present embodiment, a wafer-shaped substrate on which a large number of lower substrates 20 can be formed is used as the metal plate 20a, and the base substrate 320 and the intermediate substrate are used as the silicon substrates 320a, 330a, and 340a, respectively. A silicon wafer capable of forming a large number of layer substrates 330 and photodetecting element forming substrates 340 is used, and a wafer-like material (translucent wafer) capable of forming a large number of light-transmitting members 3 is used as the above-described light-transmitting substrate. 4A to 4D, 5A to 5F, the first inter-semiconductor substrate bonding step, and the like are performed at the wafer level.

  In the light emitting device of the present embodiment described above, the mounting substrate 2 is formed using a metal material, and the mounting portion 21 on which the LED chip 1 is mounted projects from the one surface side, and the semiconductor material. The upper substrate 30 is formed on the one surface side of the lower substrate 20. An overhanging portion 2c having a wall portion 2b protruding from the base substrate (base substrate portion) 320 in which the window hole 31 is formed so as to surround the LED chip 1 and projecting inward from the front end side of the wall portion 2b. In addition, since the light detecting element 4 for detecting the light emitted from the LED chip 1 is provided, a space for arranging the light detecting element 4 around the housing recess 2a on the one surface side of the mounting substrate 2 is provided. There is no need to secure it separately. The detection element 4 can be reduced in size while being provided on the mounting substrate 2, and the heat generated in the LED chip 1 can be efficiently dissipated to the outside through the lower substrate 20 formed of the metal material, so that the light output Output can be increased. Moreover, in the light emitting device of this embodiment, it is possible to dissipate the heat generated in the LED chip 1 to the outside more efficiently by adopting Cu having high thermal conductivity among the metal materials as the metal material. It becomes. The metal material is not limited to Cu, and Al or the like may be employed.

  Further, in the light emitting device of the present embodiment, since heat generated in the LED chip 1 when the LED chip 1 is energized is dissipated through the mount portion 21, the input power to the LED chip 1 is increased to increase the light output. It is conceivable that the mounting portion 21 of the lower substrate 20 may be thermally expanded and the base substrate 320 may be damaged. Therefore, in order to relieve stress acting on the base substrate 320 from the mount portion 21 of the lower substrate 20 between the first insulating film 323 and the mount portion 21 inside the window hole 31, stress relaxation made of resin or the like. It is preferable to provide a layer (buffer layer). By providing this stress relaxation layer, it is possible to prevent the base substrate 320 from being damaged due to the temperature rise of the LED chip 1. In this case, in the manufacturing method described with reference to FIGS. 4 to 6, the window of the lower electrode 20 is formed before the mount portion 21 is formed (that is, before the structure of FIG. 6B is obtained). The resin may be applied to the first insulating film 323 inside the hole 31 to form a stress relaxation layer.

  Further, in the light emitting device of the present embodiment, the lower substrate 20 is formed of the above metal material and has a metal plate 20a whose outer size in plan view is set larger than that of the upper substrate 30, and the metal plate 20a formed of the above metal material. Metal through a mount portion 21 projecting from the one surface side, a first insulating layer 22 formed on the one surface of the metal plate 20a, and a contact hole 22a formed in the first insulating layer 22. A pad 24 electrically connected to the plate 20a, a wiring pattern 25 formed on the first insulating layer 22 and electrically connected to the LED chip 1, and a light detection formed on the first insulating layer 22 Since the wiring patterns 26 and 26 electrically connected to the element 4 are provided, the lower substrate 20 can be used as a wiring substrate.

  In the light emitting device of the present embodiment, the above-described wall portion 2b is formed using a second silicon substrate (second semiconductor substrate) 330 and a third silicon substrate (third semiconductor substrate) 340, A mirror 2d that reflects a part of the light emitted from the LED chip 1 is formed on the second silicon substrate 330, and the light detection element 4 is formed on a portion of the third silicon substrate 340 that becomes the protruding portion 2c. Therefore, the light extraction efficiency of the light emitted from the LED chip 1 to the outside can be increased, and the light collection efficiency to the light detection element 4 can be increased.

  Further, in the light emitting device of this embodiment, the upper substrate 30 is formed with the back side bonding metal layers 327a, 327b, 327b for bonding to the wiring patterns 25, 26, 26 of the lower substrate 20 on the lower substrate 20 side. Through-hole wirings 324, 324, and 324 that electrically connect each of the LED chip 1 and the light detection element 4 to the back surface-side bonding metal layers 327a, 327b, and 327b are formed. When wiring for electrically connecting each of 1 and the light detection element 4 and the back side bonding metal layers 327a, 327b, and 327b is routed along the surface of the upper substrate 30 (when routed on one surface side of the upper electrode 30) Compared to the above, the size of the upper substrate 30 can be reduced. In the present embodiment, since the upper substrate 30 is formed using a plurality of silicon substrates 320a, 330a, and 340a, the photodetecting element 4 such as a photodiode can be easily formed in the upper substrate 30. This is possible and the cost can be reduced.

  In the light emitting device of the present embodiment, since the light detection element 4 is provided on the mounting substrate 2, for example, a light emitting device employing a red LED chip as the LED chip 1 and a green LED chip as the LED chip 1 are employed. A light emitting device and a light emitting device employing a blue LED chip as the LED chip 1 are arranged close to each other on the same circuit board, and a drive circuit unit that drives the LED chip 1 of each light emitting apparatus on the circuit board; In addition, a control circuit unit that feedback-controls the current flowing from the drive circuit unit to the LED chip 1 of each emission color is provided so that the light intensity detected by each photodetecting element 4 is maintained at each target value. Thus, the light output of the LED chip 1 of each emission color can be controlled separately based on the output of each light detection element 4, and the LED chip 1 for each emission color can be controlled. The light output of the difference such as to depend not mixed color light of aging (here, white light) can improve the accuracy of the light color and color temperature. In short, desired mixed color light can be stably obtained.

  Further, in the light emitting device of the present embodiment, disturbance light can be prevented from entering the light receiving surface of the light detection element 4, and the S / N ratio of the output of the light detection element 4 can be further increased. .

  Further, in the conventional configuration shown in FIG. 12, it is necessary to totally reflect a part of the light from the LED chip 101 at the interface between the transparent resin layer 103 and air, whereas in the light emitting device of this embodiment, Since a fine concavo-convex structure that suppresses total reflection of light emitted from the LED chip 1 is formed on the light extraction surface of the translucent member 3, it exists opposite to the mounting substrate 2 side of the translucent member 3. The total reflection of light caused by the refractive index difference between the medium (air) to be transmitted and the translucent member 3 can be suppressed, and the light extraction efficiency can be increased.

  Further, in the present embodiment, in forming the mounting substrate 2, in each of the semiconductor substrate bonding steps described above, a room temperature bonding method or a low melting point eutectic material capable of direct bonding at a low temperature is employed. Thermal stress applied to the LED chip 1 and the like in the inter-joining process can be reduced.

  In the present embodiment, one LED chip 1 is mounted on the inner bottom surface of the housing recess 2a of the mounting substrate 2. However, the number of LED chips 1 is not particularly limited, and a plurality of light emission colors are the same. The LED chip 1 may be mounted on the inner bottom surface of the storage recess 2a.

(Embodiment 2)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.

  The basic configuration of the light emitting device of the present embodiment is substantially the same as that of the first embodiment, and a plurality of (four in the illustrated example) LED chips 1a having different emission colors are formed on the inner bottom surface of the housing recess 2a of the mounting substrate 2. 1b, 1c, and 1d are mounted, and a plurality of light detection elements 4 (four in the illustrated example) that individually detect light emitted from each of the LED chips 1a to 1d of the respective emission colors are mounted on the light detection element forming substrate 340. ) Is different. Here, in this embodiment, red LED chips, green LED chips, blue LED chips, and yellow LED chips are employed as the LED chips 1a, 1b, 1c, and 1d, respectively, and red light, green light, and blue light are used. White light can be obtained as a mixed light of yellow light and yellow light. However, the emission colors of the LED chips 1a to 1d are not particularly limited, and may be appropriately selected according to desired mixed color light. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted. Further, although not shown, the through-hole wirings 322 and 334, the pads 24, the wiring patterns 25 and 26, and the like are also provided as in the first embodiment described with reference to FIGS.

  In the light emitting device of this embodiment, in order to selectively detect only the light emitted from the corresponding LED chips 1a to 1d in each light detection element 4, the light emitted from each of the LED chips 1a to 1d. A cross-shaped light shielding wall 339 that limits the radiation range of the intermediate layer substrate 330 is formed integrally with the intermediate layer substrate 330. In short, in the light emitting device of this embodiment, the opening window 331 of the intermediate layer substrate 330 is divided into four small spaces 331 a by the light shielding wall 339. Here, in this embodiment, the light shielding wall 339 in the intermediate layer substrate 330 is formed simultaneously with the opening window 331 by anisotropic etching using an alkaline solution, and each side surface of the light shielding wall 339 is within the opening window 331. Since it is a (111) plane like the side surface, each side surface of the light shielding wall 339 functions as a mirror that reflects light emitted from the LED chips 1a to 1d forward.

  Thus, in the light emitting device according to the present embodiment, the light emitted from the LED chips 1a to 1d of the respective emission colors can be detected with high accuracy by the respective light detecting elements 4, and each of the light detecting elements 4 can be detected. On the basis of the output, the light output of each of the LED chips 1a to 1d of the respective emission colors can be controlled separately, and the desired mixed color light can be stably obtained. That is, the light intensity detected by the drive circuit unit that drives each LED chip 1a to 1d and each photodetecting element 4 is maintained at the target value on the circuit board on which the light emitting device of this embodiment is mounted. Is provided with a control circuit unit that feedback-controls the current flowing from the drive circuit unit to each of the LED chips 1a to 1d, so that each of the LED chips 1a to 1d of each emission color is based on the output of each of the light detection elements 4. The light output can be controlled separately, and the light color of the mixed color light (here, white light) regardless of the temporal change in the light output of the LED chips 1a, 1b, 1c, 1d for each emission color, The accuracy of the color temperature can be improved.

(Embodiment 3)
The basic configuration of the light emitting device of this embodiment shown in FIG. 10 is substantially the same as that of Embodiment 2, and is different in that the light shielding wall 339 described in Embodiment 2 is not provided. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 2, and description is abbreviate | omitted.

  In the light emitting device of the present embodiment, a spectral filter (not shown) that selectively transmits light in the wavelength region of each emission color of each LED chip 1a to 1d (see FIG. 7) is provided on the light detection element forming substrate 40. It is alternatively provided on the light receiving surface side of each photodetecting element 4, and each photodetecting element 4 can detect light in the wavelength region of the emission color of each LED chip 1a to 1d simultaneously and with high accuracy. It can be done.

  Therefore, in the light emitting device of this embodiment, since the light shielding wall 339 described in Embodiment 2 is not provided, the mounting substrate 2 can be further downsized.

  By the way, in the light emitting device of the present embodiment, the upper substrate 30 is driven so that the drive circuit unit (not shown) for driving the LED chips 1a to 1d and the output of the light detection elements 4 are maintained at the target values. If a control circuit unit (not shown) composed of an integrated circuit that controls currents flowing from the drive circuit unit to the LED chips 1a to 1d is integrated, the drive circuit unit and the control circuit are controlled on a substrate different from the mounting substrate 2. As compared with the case where the circuit portion is provided, the light emitting device including the drive circuit portion and the control circuit portion can be downsized.

  Note that the control circuit unit described above includes, for example, a memory that stores target values (for example, a specified range of reference value ± 10%) of light outputs of red light, green light, and blue light corresponding to target mixed color light. And a comparison unit that compares the output of each photodetecting element 4 with a target value stored in the storage unit, and outputs each photodetecting element 4 based on the comparison result of the comparing unit. And an adjustment unit (not shown) that outputs an adjustment signal for each emission color to the drive circuit unit. On the other hand, the drive circuit unit is configured to PWM-modulate and supply the current to be supplied to the LED chips 1a to 1d of the respective emission colors, and increase the light intensity from the adjustment unit of the control circuit unit. When the adjustment signal to be instructed is input, the pulse width is widened, and when the adjustment signal to instruct the decrease in light intensity is input from the adjustment unit, the pulse width is narrowed. Therefore, the light output of each LED chip 1a-1d can be adjusted only by changing the pulse width without changing the magnitude of the current supplied from the drive circuit unit to each LED chip 1a-1d. It is possible to prevent an increase in the current load at 1a to 1d, and to extend the life of each LED chip 1a to 1d.

  In this embodiment, the light emission colors of the LED chips 1a to 1d are different, but the light emission colors of the LED chips 1a to 1d are the same (for example, the light emission colors of the LED chips 1a to 1d are red and blue). Alternatively, only one light detection element 4 may be provided (in this case, a filter on the light receiving surface side of the light detection element 4 is not necessary).

(Embodiment 4)
Since the basic configuration of the light emitting device of this embodiment is substantially the same as that of the third embodiment shown in FIG.

The light emitting device of the present embodiment employs a blue LED chip as each of the LED chips 1a to 1d, and is broad yellow when excited by the blue light emitted from the LED chips 1a to 1d on the translucent member 3. It differs from the third embodiment in that a particulate yellow phosphor that emits light is added and only one photodetecting element 4 is provided to detect blue light. Examples of yellow phosphors include YAG phosphors, alkaline earth silicate phosphors such as Ba ₂ SiO _4, aluminate phosphors such as Y ₃ Al ₅ O ₁₂ , and Ca ₂ BO. ₃ may be Faroboreto phosphor employed as a system such as Cl _2.

  Therefore, in the light emitting device of the present embodiment, white light composed of mixed light of blue light emitted from the LED chips 1a to 1d and yellow light emitted from the yellow phosphor can be obtained. Note that the phosphor added to the translucent member 3 is not limited to the yellow phosphor, and white light can be obtained even when, for example, a red phosphor and a green phosphor are added.

  In addition, as LED chip 1 in each said embodiment, the electroconductive board | substrate (for example, Si substrate etc.) which supports a light emission part after carrying out the epitaxial growth of the light emission part etc. on the main surface side of the board | substrate for crystal growth is used as a light emission part, for example. After fixing, a substrate obtained by removing the crystal growth substrate or the like may be used.

1 is a schematic cross-sectional view of a light emitting device according to Embodiment 1. FIG. It is principal part sectional drawing of a light-emitting device same as the above. It is a general | schematic disassembled perspective view of a light-emitting device same as the above. It is main process sectional drawing for demonstrating the manufacturing method of a light-emitting device same as the above. It is main process sectional drawing for demonstrating the manufacturing method of a light-emitting device same as the above. It is main process sectional drawing for demonstrating the manufacturing method of a light-emitting device same as the above. 4 is a schematic exploded perspective view of a light emitting device according to Embodiment 2. FIG. It is a schematic sectional drawing of a light-emitting device same as the above. It is a schematic bottom view of the optical detection element formation board | substrate in the same as the above. 6 is a schematic cross-sectional view of a light emitting device according to Embodiment 3. FIG. A prior art example is shown, (a) is a schematic plan view, and (b) is a schematic cross-sectional view along A-A 'of (a). It is a schematic sectional drawing which shows another prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 LED chip 1a-1d LED chip 2 Mounting board | substrate 2a Storage recess 2b Wall part 2c Overhang | projection part 2d Mirror 4 Photodetection element 5 Sealing part 11 Electrode 12 Electrode 20 Lower board | substrate 20a Metal plate 21 Mount part 22 Insulating layer 22a Contact Hole 24 Pad 25 Wiring pattern 26 Wiring pattern 30 Upper substrate 31 Window hole 320 Base substrate (base substrate portion)
320a Silicon substrate (first semiconductor substrate)
324 Through-hole wiring 327a Back side joining metal layer 327b Back side joining metal layer 330 Intermediate layer substrate 330a Silicon substrate (second semiconductor substrate)
334 Through-hole wiring 340 Photodetecting element forming substrate 340a Silicon substrate (third semiconductor substrate)

Claims (7)

  An LED chip having electrodes formed on both sides in the thickness direction and a mounting substrate on which the LED chip is mounted are provided. The mounting substrate is formed using a metal material, and a mounting portion for mounting the LED chip is on one surface side. There is a projecting lower substrate, and an upper substrate formed on the one surface side of the lower substrate, which is formed of a semiconductor material and has a window hole in which the mount portion is disposed on the inner side. The upper substrate has a wall portion projecting from the base substrate portion in which the window hole is formed so as to surround the LED chip, and the LED chip is formed on the overhang portion projecting inward from the front end side of the wall portion. A light emitting device comprising a light detecting element for detecting light emitted from the light emitting device.   The lower substrate is formed of the metal material and has a metal plate whose outer size in plan view is set larger than that of the upper substrate, and the mount portion formed of the metal material and projecting from one surface side of the metal plate An insulating layer formed on the one surface of the metal plate, a pad electrically connected to the metal plate through a contact hole formed in the insulating layer, the LED chip and the light formed on the insulating layer The light emitting device according to claim 1, further comprising: a wiring pattern electrically connected to each of the detection elements.   The light emitting device according to claim 1, wherein the metal material is Cu.   The upper substrate is formed by using a first semiconductor substrate in which the base substrate portion is made of the semiconductor material, and the wall portion is made of the second semiconductor substrate made of the semiconductor material and the first substrate made of the semiconductor material. A mirror that reflects a part of the light emitted from the LED chip is formed on the second semiconductor substrate, and the portion serving as the overhanging portion in the third semiconductor substrate The light-emitting device according to claim 1, wherein the light-detecting element is formed on the light-emitting device.   In the upper substrate, a back-side bonding metal layer for bonding to the wiring pattern of the lower substrate is formed on the lower substrate side, and the LED chip and the light detection element are electrically connected to the back-side bonding metal layer. The light emitting device according to any one of claims 1 to 4, wherein a through-hole wiring to be connected is formed.   A drive circuit unit that drives the LED chip, and a control that controls a current supplied from the drive circuit unit to the LED chip so that the light intensity detected by the light detection element is maintained at a preset target value. The light emitting device according to claim 1, wherein a circuit portion is integrated on the upper substrate.   The LED chip includes a plurality of LED chips having different emission colors, and the upper substrate includes a plurality of light detection elements that individually detect light emitted from the LED chips of each light emission color as the light detection elements. The light emitting device according to any one of claims 1 to 6, further comprising:

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