JP5350616B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5350616B2
JP5350616B2 JP2007244092A JP2007244092A JP5350616B2 JP 5350616 B2 JP5350616 B2 JP 5350616B2 JP 2007244092 A JP2007244092 A JP 2007244092A JP 2007244092 A JP2007244092 A JP 2007244092A JP 5350616 B2 JP5350616 B2 JP 5350616B2
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JP
Japan
Prior art keywords
film
conductive film
insulating film
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007244092A
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English (en)
Japanese (ja)
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JP2008103706A (ja
JP2008103706A5 (enExample
Inventor
亮 荒澤
彩 宮崎
滋春 物江
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007244092A priority Critical patent/JP5350616B2/ja
Publication of JP2008103706A publication Critical patent/JP2008103706A/ja
Publication of JP2008103706A5 publication Critical patent/JP2008103706A5/ja
Application granted granted Critical
Publication of JP5350616B2 publication Critical patent/JP5350616B2/ja
Expired - Fee Related legal-status Critical Current
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  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2007244092A 2006-09-22 2007-09-20 半導体装置 Expired - Fee Related JP5350616B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007244092A JP5350616B2 (ja) 2006-09-22 2007-09-20 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006256902 2006-09-22
JP2006256902 2006-09-22
JP2007244092A JP5350616B2 (ja) 2006-09-22 2007-09-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2008103706A JP2008103706A (ja) 2008-05-01
JP2008103706A5 JP2008103706A5 (enExample) 2010-10-28
JP5350616B2 true JP5350616B2 (ja) 2013-11-27

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ID=39437761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007244092A Expired - Fee Related JP5350616B2 (ja) 2006-09-22 2007-09-20 半導体装置

Country Status (1)

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JP (1) JP5350616B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010035627A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2011029610A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US9287405B2 (en) * 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
CN107134496B (zh) * 2016-02-29 2019-05-31 昆山工研院新型平板显示技术中心有限公司 薄膜晶体管及其制造方法、显示面板及显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5019677B2 (ja) * 2001-06-25 2012-09-05 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4233307B2 (ja) * 2002-11-05 2009-03-04 シャープ株式会社 アクティブマトリクス基板および表示装置
JP5046529B2 (ja) * 2005-02-25 2012-10-10 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JP2008103706A (ja) 2008-05-01

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