JP5350276B2 - 集積回路用高シリコン含量シロキサンポリマー - Google Patents
集積回路用高シリコン含量シロキサンポリマー Download PDFInfo
- Publication number
- JP5350276B2 JP5350276B2 JP2009550737A JP2009550737A JP5350276B2 JP 5350276 B2 JP5350276 B2 JP 5350276B2 JP 2009550737 A JP2009550737 A JP 2009550737A JP 2009550737 A JP2009550737 A JP 2009550737A JP 5350276 B2 JP5350276 B2 JP 5350276B2
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- JP
- Japan
- Prior art keywords
- group
- thin film
- ether
- integer
- groups
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
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- H10P14/6342—
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- H10P14/6686—
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- H10P14/6922—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Medicinal Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Polymers & Plastics (AREA)
- Wood Science & Technology (AREA)
- Silicon Polymers (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US90249407P | 2007-02-22 | 2007-02-22 | |
| US60/902,494 | 2007-02-22 | ||
| PCT/FI2008/050080 WO2008102060A2 (en) | 2007-02-22 | 2008-02-21 | High silicon content siloxane polymers for integrated circuits |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010519375A JP2010519375A (ja) | 2010-06-03 |
| JP2010519375A5 JP2010519375A5 (enExample) | 2010-12-09 |
| JP5350276B2 true JP5350276B2 (ja) | 2013-11-27 |
Family
ID=39710569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009550737A Active JP5350276B2 (ja) | 2007-02-22 | 2008-02-21 | 集積回路用高シリコン含量シロキサンポリマー |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8133965B2 (enExample) |
| EP (1) | EP2113005A2 (enExample) |
| JP (1) | JP5350276B2 (enExample) |
| KR (1) | KR101647360B1 (enExample) |
| TW (1) | TWI434891B (enExample) |
| WO (1) | WO2008102060A2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI439494B (zh) | 2007-02-27 | 2014-06-01 | Braggone Oy | 產生有機矽氧烷聚合物的方法 |
| WO2010019722A2 (en) * | 2008-08-13 | 2010-02-18 | Intermolecular, Inc. | Combinatorial approach to the development of cleaning formulations for glue removal in semiconductor applications |
| US8048810B2 (en) * | 2010-01-29 | 2011-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for metal gate N/P patterning |
| KR20130025888A (ko) | 2010-03-29 | 2013-03-12 | 질렉스 오와이 | 내엣칭성 알루미나 기반 코팅 |
| US8864898B2 (en) * | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| US9011591B2 (en) * | 2011-09-21 | 2015-04-21 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
| KR101825546B1 (ko) * | 2014-05-26 | 2018-02-05 | 제일모직 주식회사 | 실리카계 막 형성용 조성물, 및 실리카계 막의 제조방법 |
| EP3872223A3 (en) * | 2018-08-10 | 2021-11-17 | Versum Materials US, LLC | Silicon compounds and methods for depositing films using same |
| FI129480B (en) * | 2018-08-10 | 2022-03-15 | Pibond Oy | Silanol-containing organic-inorganic hybrid coatings for high resolution patterning |
| KR102373339B1 (ko) | 2018-08-10 | 2022-03-10 | 버슘머트리얼즈 유에스, 엘엘씨 | 규소 화합물 및 이를 사용하여 막을 증착시키는 방법 |
| CN110283315B (zh) * | 2019-06-25 | 2021-06-08 | 湖北兴瑞硅材料有限公司 | 一种利用甲基氯硅烷副产物生产羟基硅油的方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6962727B2 (en) * | 1998-03-20 | 2005-11-08 | Honeywell International Inc. | Organosiloxanes |
| US6872456B2 (en) * | 2001-07-26 | 2005-03-29 | Dow Corning Corporation | Siloxane resins |
| US6852367B2 (en) | 2001-11-20 | 2005-02-08 | Shipley Company, L.L.C. | Stable composition |
| KR100985272B1 (ko) * | 2002-01-17 | 2010-10-04 | 질렉스 오와이 | 집적 회로에 적용하기 위한 혼성 유기-무기 유전체를 위한폴리(유기실록산) 물질 및 방법 |
| US20050032357A1 (en) * | 2002-01-17 | 2005-02-10 | Rantala Juha T. | Dielectric materials and methods for integrated circuit applications |
| JP2004059738A (ja) * | 2002-07-29 | 2004-02-26 | Jsr Corp | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
| US7514709B2 (en) * | 2003-04-11 | 2009-04-07 | Silecs Oy | Organo-silsesquioxane polymers for forming low-k dielectrics |
| JP2004006890A (ja) * | 2003-05-27 | 2004-01-08 | Tokyo Ohka Kogyo Co Ltd | 多層配線構造の形成方法 |
| JP4110401B2 (ja) * | 2003-06-13 | 2008-07-02 | 信越化学工業株式会社 | 感光性シリコーン樹脂組成物及びその硬化物並びにネガ型微細パターンの形成方法 |
| JP4491283B2 (ja) * | 2004-06-10 | 2010-06-30 | 信越化学工業株式会社 | 反射防止膜形成用組成物を用いたパターン形成方法 |
| JP4379596B2 (ja) * | 2004-06-10 | 2009-12-09 | 信越化学工業株式会社 | 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法 |
| KR101275635B1 (ko) * | 2004-07-16 | 2013-06-14 | 다우 코닝 코포레이션 | 방사선 민감성 실리콘 수지 조성물 |
| SG119379A1 (en) * | 2004-08-06 | 2006-02-28 | Nippon Catalytic Chem Ind | Resin composition method of its composition and cured formulation |
| WO2006024693A1 (en) * | 2004-08-31 | 2006-03-09 | Silecs Oy | Novel polyorganosiloxane dielectric materials |
| JP4513966B2 (ja) * | 2005-03-07 | 2010-07-28 | 信越化学工業株式会社 | プライマー組成物及びそれを用いた電気電子部品 |
| EP1891145B1 (en) * | 2005-06-13 | 2017-08-09 | Pibond Oy | Method for producing a polymer for semiconductor optoelectronics comprising polymerizing functionalized silane monomers with bridging hydrocarbon group |
-
2008
- 2008-01-31 TW TW97103749A patent/TWI434891B/zh active
- 2008-02-21 JP JP2009550737A patent/JP5350276B2/ja active Active
- 2008-02-21 EP EP08718533A patent/EP2113005A2/en not_active Withdrawn
- 2008-02-21 US US12/071,500 patent/US8133965B2/en active Active
- 2008-02-21 KR KR1020097019801A patent/KR101647360B1/ko active Active
- 2008-02-21 WO PCT/FI2008/050080 patent/WO2008102060A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008102060A2 (en) | 2008-08-28 |
| TWI434891B (zh) | 2014-04-21 |
| EP2113005A2 (en) | 2009-11-04 |
| US20080206578A1 (en) | 2008-08-28 |
| JP2010519375A (ja) | 2010-06-03 |
| TW200844180A (en) | 2008-11-16 |
| WO2008102060A3 (en) | 2009-03-05 |
| US8133965B2 (en) | 2012-03-13 |
| KR101647360B1 (ko) | 2016-08-10 |
| KR20090127140A (ko) | 2009-12-09 |
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