JP5345162B2 - 半導体実装用ボンディングワイヤ - Google Patents
半導体実装用ボンディングワイヤ Download PDFInfo
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- JP5345162B2 JP5345162B2 JP2011013848A JP2011013848A JP5345162B2 JP 5345162 B2 JP5345162 B2 JP 5345162B2 JP 2011013848 A JP2011013848 A JP 2011013848A JP 2011013848 A JP2011013848 A JP 2011013848A JP 5345162 B2 JP5345162 B2 JP 5345162B2
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Description
(1) 酸化の速さが異なる2種以上の成分からなる金属材料を、酸素を含む気体中で一定時間加熱し、その後形成した表面酸化物を機械的又は化学的に除去してなり、酸化の速さが速い成分の濃度が表面から深さ方向に相対的に、かつ連続的に高くなっていることを特徴とする半導体実装用ボンディングワイヤ。
(2) 金、パラジウム、白金、ロジウム、銀、銅から選ばれる単体もしくは2種類以上の元素から成る固溶体を主体とし、該単体又は固溶体以外の1種以上の元素を溶質元素として含有し、その溶質元素の中の、少なくとも1種類の溶質元素の濃度が表面から深さ方向に連続的に高くなっていることを特徴とする(1)記載の半導体実装用ボンディングワイヤ。
(3) 前記溶質濃度が表面から内部に変化している距離が1μm以上であることを特徴とする(1)又は(2)に記載の半導体実装用ボンディングワイヤ。
(4) 表面から材料の中心までの長さの、表面から10%の深さにおいて、少なくとも溶質元素の1種以上の溶質濃度が、中心の溶質濃度の1/2以下になっている(1)〜(3)のいずれか1項に記載の半導体実装用ボンディングワイヤ。
(5) 前記金属材料が金を主体とする材料であることを特徴とする(1)〜(4)のいずれか1項に記載の半導体実装用ボンディングワイヤ。
(6) カルシウム、希土類金属(イットリウムとスカンジウムを含むランタノイド系金属)、ベリリウム、アルミニウム、ホウ素、ケイ素、ゲルマニウム、インジウム、銀、銅、マンガン、鉄、チタン、パラジウム、白金、ロジウムの中から選ばれる1種類以上の元素を含有し、それらの合計の平均濃度が、0.0001質量%以上50質量%未満であることを特徴とする(5)に記載の半導体実装用ボンディングワイヤ。
(7) 表面から内部に向かって結晶粒径が小さくなっていることを特徴とする(1)〜(6)のいずれか1項に記載の半導体実装用ボンディングワイヤ。
(8) 表面から内部に向かって硬度が高くなっていることを特徴とする(1)〜(7)のいずれか1項に記載の半導体実装用ボンディングワイヤ。
場合、主体とする金属の融点の80%以上の温度が効率的であるが、表面近傍のみ濃度遷移領域を設けたい場合はこの限りではない。
99.99mass%のボンディングワイヤ用金素材について、本発明を適用した。純度99.9999mass%の金に、カルシウム、イットリウム、ベリリウム、アルミウムを添加して、表1の組成を有する直径5mm、長さ100mmのインゴットAを鋳造した。
99mass%のボンディングワイヤ用金素材について本発明を適用した。純度99.9999mass%の金に、カルシウム、セリウム、ランタン、白金、パラジウム、銅を添加して、表9の組成を有する直径20mm、長さ200mmのインゴットCを鋳造した。
99.99mass%のボンディングワイヤ用金素材について本発明を適用した。純度99.9999mass%の金に、カルシウム、ネオジウム、ベリリウム、プラセオジウムを添加して、表16の組成を有する直径20mm、長さ200mmのインゴットEを鋳造した。その後、溝圧延とドローベンチによる引抜加工によって、直径12mmに減面加工を施した。
99mass%のボンディングワイヤ用金素材について本発明を適用した。純度99.9999mass%の金に、カルシウム、パラジウムを添加して、表24の組成を有する直径20mm、長さ200mmのインゴットGを鋳造した。その後、溝圧延とドローベンチによる引抜加工によって、直径12mmに減面加工を施した。
99mass%のボンディングワイヤ用銅素材について本発明を適用した。純度99.999mass%の銅に、カルシウムを添加して、表32の組成を有する直径20mm、長さ200mmのインゴットIを鋳造した。その後、溝圧延とドローベンチによる引抜加工によって、直径12mmに減面加工を施した。
Claims (8)
- 酸化の速さが異なる2種以上の成分からなる金属材料を、酸素を含む気体中で一定時間加熱し、その後形成した表面酸化物を機械的又は化学的に除去してなり、酸化の速さが速い成分の濃度が表面から深さ方向に相対的に、かつ連続的に高くなっていることを特徴とする半導体実装用ボンディングワイヤ。
- 金、パラジウム、白金、ロジウム、銀、銅の中の単体もしくは2種類以上の元素から成る固溶体を主体とし、該単体又は固溶体以外の1種以上の元素を溶質元素として含有し、その溶質元素の中の、少なくとも1種類の溶質元素の濃度が表面から深さ方向に連続的に高くなっていることを特徴とする請求項1記載の半導体実装用ボンディングワイヤ。
- 前記溶質濃度が表面から内部に変化している距離が1μm以上であることを特徴とする請求項1又は2に記載の半導体実装用ボンディングワイヤ。
- 表面から材料の中心までの長さの、表面から10%の深さにおいて、少なくとも溶質元素の1種以上の溶質濃度が、中心の溶質濃度の1/2以下になっている請求項1〜3のいずれか1項に記載の半導体実装用ボンディングワイヤ。
- 前記金属材料が金を主体とする材料であることを特徴とする請求項1〜4のいずれか1項に記載の半導体実装用ボンディングワイヤ。
- カルシウム、希土類金属(イットリウムとスカンジウムを含むランタノイド系金属)、ベリリウム、アルミニウム、ホウ素、ケイ素、ゲルマニウム、インジウム、銀、銅、マンガン、鉄、チタン、パラジウム、白金、ロジウムの中から選ばれる1種類以上の元素を含有し、それらの合計の平均濃度が、0.0001質量%以上50質量%未満であることを特徴とする請求項5記載の半導体実装用ボンディングワイヤ。
- 表面から内部に向かって結晶粒径が小さくなっていることを特徴とする請求項1〜6のいずれか1項に記載の半導体実装用ボンディングワイヤ。
- 表面から内部に向かって硬度が高くなっていることを特徴とする請求項1〜7のいずれか1項に記載の半導体実装用ボンディングワイヤ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011013848A JP5345162B2 (ja) | 2004-06-16 | 2011-01-26 | 半導体実装用ボンディングワイヤ |
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Application Number | Priority Date | Filing Date | Title |
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JP2004178412 | 2004-06-16 | ||
JP2004178412 | 2004-06-16 | ||
JP2011013848A JP5345162B2 (ja) | 2004-06-16 | 2011-01-26 | 半導体実装用ボンディングワイヤ |
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CN109811176A (zh) * | 2019-03-25 | 2019-05-28 | 杭州辰卓科技有限公司 | 一种电子器件封装高阻尼键合线用金合金及其工艺 |
CN109881037A (zh) * | 2019-03-25 | 2019-06-14 | 杭州辰卓科技有限公司 | 一种电子领域键合线用高阻尼高导热金合金及其工艺 |
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JP5281191B1 (ja) | 2012-12-28 | 2013-09-04 | 田中電子工業株式会社 | パワ−半導体装置用アルミニウム合金細線 |
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CN109881037A (zh) * | 2019-03-25 | 2019-06-14 | 杭州辰卓科技有限公司 | 一种电子领域键合线用高阻尼高导热金合金及其工艺 |
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