JP5341380B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5341380B2 JP5341380B2 JP2008098184A JP2008098184A JP5341380B2 JP 5341380 B2 JP5341380 B2 JP 5341380B2 JP 2008098184 A JP2008098184 A JP 2008098184A JP 2008098184 A JP2008098184 A JP 2008098184A JP 5341380 B2 JP5341380 B2 JP 5341380B2
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- pedestal
- electrode body
- support electrode
- semiconductor device
- semiconductor chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
Claims (5)
- 中央に台座を設けた支持電極体、前記台座の表面に接合して搭載された半導体チップ、この半導体チップから引き出したリード電極体、これら台座と半導体チップおよびリード電極体の基部を包む封止樹脂、前記支持電極体の中央の前記台座とその周囲の前記支持電極体の周縁部との間の表面側に円を描くように設けた溝とを備え、前記支持電極体が放熱板の丸孔に圧入される半導体装置において、
前記溝の内壁をなす前記台座の外周側壁に、前記溝の深部に向かって中央方向に連続的に傾斜した傾斜部を設け、
連続的な前記傾斜部は、湾曲し、かつ前記台座の高さ方向の90%以上に亘ることを特徴とする半導体装置。 - 請求項1において、前記台座の前記半導体チップ搭載面は、前記放熱板の厚さの範囲内よりも外側へ突出して形成されたことを特徴とする半導体装置。
- 請求項1〜2のいずれかにおいて、前記台座の前記半導体チップ搭載面は、前記支持電極体周縁部よりも高く突出して形成されたことを特徴とする半導体装置。
- 請求項1〜3のいずれかにおいて、前記台座の前記外周側壁は、前記台座の表面をたたく冷間鍛造加工に伴ってはみ出した湾曲面を備えたことを特徴とする半導体装置。
- 請求項1〜4のいずれかにおいて、前記半導体装置は、単方向に電流を流す整流作用を有することを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008098184A JP5341380B2 (ja) | 2008-04-04 | 2008-04-04 | 半導体装置 |
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JP2008098184A JP5341380B2 (ja) | 2008-04-04 | 2008-04-04 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009252951A JP2009252951A (ja) | 2009-10-29 |
JP5341380B2 true JP5341380B2 (ja) | 2013-11-13 |
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ID=41313380
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Application Number | Title | Priority Date | Filing Date |
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JP2008098184A Active JP5341380B2 (ja) | 2008-04-04 | 2008-04-04 | 半導体装置 |
Country Status (1)
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JP (1) | JP5341380B2 (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19549202B4 (de) * | 1995-12-30 | 2006-05-04 | Robert Bosch Gmbh | Gleichrichterdiode |
JP2950468B2 (ja) * | 1996-05-17 | 1999-09-20 | サンケン電気株式会社 | 半導体装置 |
JP3341731B2 (ja) * | 1999-08-30 | 2002-11-05 | サンケン電気株式会社 | 半導体素子用支持板、半導体装置及び半導体装置実装体 |
TW200527618A (en) * | 2003-11-10 | 2005-08-16 | Bosch Gmbh Robert | Diode |
JP2007042900A (ja) * | 2005-08-04 | 2007-02-15 | Denso Corp | 半導体装置 |
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2008
- 2008-04-04 JP JP2008098184A patent/JP5341380B2/ja active Active
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JP2009252951A (ja) | 2009-10-29 |
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