JP5338051B2 - 接着剤組成物、回路接続構造体及び半導体装置 - Google Patents
接着剤組成物、回路接続構造体及び半導体装置 Download PDFInfo
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- JP5338051B2 JP5338051B2 JP2007224376A JP2007224376A JP5338051B2 JP 5338051 B2 JP5338051 B2 JP 5338051B2 JP 2007224376 A JP2007224376 A JP 2007224376A JP 2007224376 A JP2007224376 A JP 2007224376A JP 5338051 B2 JP5338051 B2 JP 5338051B2
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- Adhesives Or Adhesive Processes (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
- Conductive Materials (AREA)
Description
[式中、R5は(メタ)アクリロイル基を示し、R6は水素原子又はメチル基を示し、w及びxは各々独立に1〜8の整数を示す。なお、式中、R5同士、R6同士、w同士及びx同士はそれぞれ同一でも異なっていてもよい。]
[式中、R10、R11及びR12は各々独立に、水素原子、炭素数1〜5のアルキル基、炭素数1〜5のアルコキシ基、炭素数1〜5のアルコキシカルボニル基、又は、アリール基を示し、R13は(メタ)アクリロイル基、ビニル基、イソシアナート基、イミダゾール基、メルカプト基、アミノ基、メチルアミノ基、ジメチルアミノ基、ベンジルアミノ基、フェニルアミノ基、シクロヘキシルアミノ基、モルホリノ基、ピペラジノ基、ウレイド基、又は、グリシジル基を示し、cは1〜10の整数を示す。]
撹拌機、温度計、コンデンサー、真空発生装置及び窒素ガス導入管が備え付けられたヒーター付きステンレス製オートクレーブに、ジカルボン酸及びジオールを所定の比率で投入し、更に、触媒としての三酸化アンチモンを上記ジカルボン酸100molに対して0.003molの比率で、界面活性剤としての水酸化コリンを上記ジカルボン酸100molに対して4molの比率でそれぞれ投入した。次いで、0.35MPaの窒素圧下で2.5時間かけて250℃まで昇温し、そのまま1時間撹拌した。その後、大気圧(760mmHg)まで30mmHg/分の条件で減圧し、そのまま250℃で3時間撹拌した。次いで、25℃まで冷却した後、白色沈殿を取り出し、水洗後、真空乾燥することでポリエステルポリオールを得た。
上述したジカルボン酸とジオールとの反応によって得られたポリエステルポリオールを十分に乾燥した後、トルエンに溶解し、撹拌機、滴下漏斗、還流冷却機及び窒素ガス導入管を取り付けた四つ口フラスコに投入した。また、触媒としてジブチル錫ラウレートをポリエステルポリオール100質量部に対して0.02質量部となる量投入した。
ジガルボン酸としてテレフタル酸、ジオールとしてネオペンチルグリコール、ジイソシアネートとして4,4’−ジフェニルメタンジイソシアネートを、下記表1に示す質量比となるようにそれぞれ用い、上述したポリエステルポリオールの調製方法及びポリエステルウレタン樹脂の調製方法の手順に従ってポリエステルウレタン樹脂A〜Eを得た。得られた各ポリエステルウレタン樹脂60gをメチルエチルケトン90gに溶解し、40質量%のポリエステルウレタン樹脂溶液を調製した。
得られた各ポリエステルウレタン樹脂0.1gを重クロロホルム2mLに溶解し、1H−NMRによってそれぞれのジイソシアネート化合物由来の構造単位の含有量の測定を行った。測定はブルッカー社製のAMX−400を用いて、400MHzの条件で行った。
得られた各ポリエステルウレタン樹脂の重量平均分子量を、ゲル浸透クロマトグラフィーを用いて測定した。カラムはGelpackGL−R440+GL−R450+GL−R400Mを用い、溶媒はテトラヒドロフランを用い、流量2.05ml/min、注入量200μl及び圧力519.4MPa(53kgf/cm2)の条件で測定した。検出器は、株式会社日立製作所製のL−3300RIを用いた。ポリスチレンを用いた検量線から各ポリエステルウレタン樹脂の重量平均分子量を算出した。その結果を表3に示す。
ポリスチレン粒子の表面上に、厚さ0.2μmになるようにニッケルからなる層を設け、更にこのニッケルからなる層の表面上に、厚さ0.04μmになるように金からなる層を設けた。こうして平均粒径10μmの導電性粒子を作製した。
(a)熱可塑性樹脂として、40質量%ポリエステルウレタン樹脂A溶液125g(固形分質量50g)、(b)ラジカル重合性化合物として、イソシアヌル酸EO変性ジアクリレート(商品名:M−215、東亞合成株式会社製)25g、ウレタンアクリレート(商品名:AT−600、共栄社化学株式会社製)20g、2−(メタ)アクリロイロキシエチルホスフェート(商品名:ライトエステルP−2M、共栄社化学株式会社製)5g、及び、(c)ラジカル重合開始剤として、炭化水素希釈50質量%t−ヘキシルペルオキシ−2−エチルヘキサノエート(商品名:パーヘキシルO、1分間半減期温度133℃、日本油脂株式会社製)4gを混合し、さらに上記の導電性粒子を全体の3体積%となる量加えてこれを均一に分散させて、塗工用の分散液を得た。次いで、得られた分散液を、片面を表面処理したPETフィルム(厚さ80μm)に塗工装置を用いて塗布し、70℃で10分間熱風乾燥して、厚さ20μmのフィルム状の回路接続材料(接着剤組成物)を得た。
実施例1で用いたポリエステルウレタン樹脂A溶液に代えて、ポリエステルウレタン樹脂B溶液を用いた以外は実施例1と同様にして、フィルム状の回路接続材料(接着剤組成物)を作製した。
実施例1で用いたポリエステルウレタン樹脂A溶液に代えて、ポリエステルウレタン樹脂C溶液を用いた以外は実施例1と同様にして、フィルム状の回路接続材料(接着剤組成物)を作製した。
実施例1で用いたポリエステルウレタン樹脂A溶液125gに代えて、ポリエステルウレタン樹脂Aを合成する際に用いたポリエステルポリオール(ガラス転移温度:85℃)40gをメチルエチルケトン60gに溶解した溶液100gを用いた以外は実施例1と同様にして、フィルム状の回路接続材料(接着剤組成物)を作製した。
実施例1で用いたポリエステルウレタン樹脂A溶液に代えて、ポリエステルウレタン樹脂D溶液を用いた以外は実施例1と同様にして、フィルム状の回路接続材料(接着剤組成物)を作製した。
実施例1で用いたポリエステルウレタン樹脂A溶液に代えて、ポリエステルウレタン樹脂E溶液を用いた以外は実施例1と同様にして、フィルム状の回路接続材料(接着剤組成物)を作製した。
実施例1〜3及び比較例1〜3で得られたフィルム状の回路接続材料(接着剤組成物)を用いて、ライン幅25μm、ピッチ50μm及び厚さ18μmの銅回路を500本有するフレキシブル回路板(FPC)と、厚さ0.2μmの酸化インジウム(ITO)の薄層を形成したガラス(厚さ1.1mm、表面抵抗20Ω/□)とを、熱圧着装置(加熱方式:コンスタントヒート型、東レエンジニアリング株式会社製)を用いて160℃の温度にて3MPaで10秒間の加熱加圧を行った。これにより、幅2mmにわたりFPC基板とITO基板とをフィルム状の回路接続材料の硬化物により接続した接続体(回路接続構造体)を作製した。
実施例1〜3及び比較例1〜2で得られたフィルム状の回路接続材料(接着剤組成物)を用いて、ライン幅25μm、ピッチ50μm及び厚さ18μmの銅回路を500本有するフレキシブル回路板(FPC)と、厚さ0.2μmの酸化インジウム(ITO)の薄層を形成したガラス(厚さ1.1mm、表面抵抗20Ω/□)とを、熱圧着装置(加熱方式:コンスタントヒート型、東レエンジニアリング株式会社製)を用いて150℃の温度にて3MPaで10秒間の加熱加圧を行った。これにより、幅2mmにわたりFPC基板とITO基板とをフィルム状の回路接続材料の硬化物により接続した接続体(回路接続構造体)を作製した。
封止材、80…半導体素子接続部材。
Claims (6)
- (a)同一分子内にウレタン結合及びエステル結合を有し、ポリエステルポリオールとジイソシアネート化合物との反応により得られる、重量平均分子量が5,000〜150,000である熱可塑性樹脂であって、 1 H−NMRにより測定される熱可塑性樹脂中のジイソシアネート化合物由来の構造単位の含有量が15〜25mol%である熱可塑性樹脂と、
(b)ウレタン(メタ)アクリレートオリゴマーを含むラジカル重合性化合物と、
(c)ラジカル重合開始剤と、
を含有する、回路接続材料として用いる接着剤組成物。 - 更に(d)分子内に1つ以上のリン酸基を有するビニル化合物を含有する、請求項1記載の接着剤組成物。
- 更に(e)導電性粒子を含有する、請求項1又は2記載の接着剤組成物。
- 前記ポリエステルポリオールは、テレフタル酸とジオールとの反応により得られるものである、請求項1〜3のいずれか一項に記載の接着剤組成物。
- 対向配置された一対の回路部材と、
前記一対の回路部材の間に設けられ、前記一対の回路部材が有する回路電極同士が電気的に接続されるように回路部材同士を接着する接続部材と、
を備え、
前記接続部材が、請求項1〜4のいずれか一項に記載の接着剤組成物の硬化物からなるものである、回路接続構造体。 - 半導体素子と、
前記半導体素子を搭載する基板と、
前記半導体素子及び前記基板間に設けられ、前記半導体素子及び前記基板を電気的に接続するとともに接着する接続部材と、
を備え、
前記接続部材が、請求項1〜4のいずれか一項に記載の接着剤組成物の硬化物からなるものである、半導体装置。
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