JP5337862B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP5337862B2
JP5337862B2 JP2011276729A JP2011276729A JP5337862B2 JP 5337862 B2 JP5337862 B2 JP 5337862B2 JP 2011276729 A JP2011276729 A JP 2011276729A JP 2011276729 A JP2011276729 A JP 2011276729A JP 5337862 B2 JP5337862 B2 JP 5337862B2
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Japan
Prior art keywords
layer
light emitting
emitting device
semiconductor light
composition ratio
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Expired - Fee Related
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JP2011276729A
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Japanese (ja)
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JP2012060172A (ja
JP2012060172A5 (https=
Inventor
浩一 橘
肇 名古
年輝 彦坂
重哉 木村
真也 布上
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Toshiba Corp
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Toshiba Corp
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JP2011276729A 2011-12-19 2011-12-19 半導体発光素子 Expired - Fee Related JP5337862B2 (ja)

Priority Applications (1)

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JP2011276729A JP5337862B2 (ja) 2011-12-19 2011-12-19 半導体発光素子

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JP2011276729A JP5337862B2 (ja) 2011-12-19 2011-12-19 半導体発光素子

Related Parent Applications (1)

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JP2010031457A Division JP4892618B2 (ja) 2010-02-16 2010-02-16 半導体発光素子

Related Child Applications (1)

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JP2012235345A Division JP5554387B2 (ja) 2012-10-25 2012-10-25 半導体発光素子

Publications (3)

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JP2012060172A JP2012060172A (ja) 2012-03-22
JP2012060172A5 JP2012060172A5 (https=) 2012-12-13
JP5337862B2 true JP5337862B2 (ja) 2013-11-06

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ID=46056806

Family Applications (1)

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JP2011276729A Expired - Fee Related JP5337862B2 (ja) 2011-12-19 2011-12-19 半導体発光素子

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JP (1) JP5337862B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6001446B2 (ja) * 2012-12-28 2016-10-05 株式会社東芝 半導体発光素子及びその製造方法
KR102099193B1 (ko) 2013-09-27 2020-04-09 인텔 코포레이션 실리콘 핀들 상에서의 ｌｅｄ 구조체들의 형성

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4401610B2 (ja) * 2001-12-28 2010-01-20 日亜化学工業株式会社 窒化物半導体レーザ素子
JP4628651B2 (ja) * 2003-04-02 2011-02-09 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
WO2005034301A1 (ja) * 2003-09-25 2005-04-14 Matsushita Electric Industrial Co., Ltd. 窒化物半導体素子およびその製造方法
JP2006245165A (ja) * 2005-03-02 2006-09-14 Sony Corp 半導体発光素子
JP2007207827A (ja) * 2006-01-31 2007-08-16 Toshiba Corp 半導体レーザ装置

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