JP5316899B2 - イオン注入方法およびイオン注入装置 - Google Patents
イオン注入方法およびイオン注入装置 Download PDFInfo
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- JP5316899B2 JP5316899B2 JP2010092055A JP2010092055A JP5316899B2 JP 5316899 B2 JP5316899 B2 JP 5316899B2 JP 2010092055 A JP2010092055 A JP 2010092055A JP 2010092055 A JP2010092055 A JP 2010092055A JP 5316899 B2 JP5316899 B2 JP 5316899B2
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- current density
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- 238000000034 method Methods 0.000 title claims abstract description 87
- 238000005468 ion implantation Methods 0.000 title claims description 74
- 238000009826 distribution Methods 0.000 claims abstract description 449
- 239000000758 substrate Substances 0.000 claims abstract description 152
- 239000011521 glass Substances 0.000 claims abstract description 145
- 230000008569 process Effects 0.000 claims abstract description 62
- 238000010884 ion-beam technique Methods 0.000 claims description 339
- 238000012545 processing Methods 0.000 claims description 50
- 238000012937 correction Methods 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 13
- 238000002347 injection Methods 0.000 abstract description 19
- 239000007924 injection Substances 0.000 abstract description 19
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000002513 implantation Methods 0.000 description 80
- 150000002500 ions Chemical class 0.000 description 39
- 238000013459 approach Methods 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010092055A JP5316899B2 (ja) | 2010-04-13 | 2010-04-13 | イオン注入方法およびイオン注入装置 |
| CN 201010262386 CN102222595B (zh) | 2010-04-13 | 2010-08-25 | 离子注入方法和离子注入装置 |
| KR20100087501A KR101119795B1 (ko) | 2010-04-13 | 2010-09-07 | 이온 주입 방법 및 이온 주입 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010092055A JP5316899B2 (ja) | 2010-04-13 | 2010-04-13 | イオン注入方法およびイオン注入装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011222386A JP2011222386A (ja) | 2011-11-04 |
| JP5316899B2 true JP5316899B2 (ja) | 2013-10-16 |
Family
ID=44779114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010092055A Active JP5316899B2 (ja) | 2010-04-13 | 2010-04-13 | イオン注入方法およびイオン注入装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5316899B2 (ko) |
| KR (1) | KR101119795B1 (ko) |
| CN (1) | CN102222595B (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5477652B2 (ja) * | 2010-09-07 | 2014-04-23 | 日新イオン機器株式会社 | イオン注入方法及びイオン注入装置 |
| CN105575748B (zh) * | 2015-12-11 | 2017-11-21 | 中国电子科技集团公司第四十八研究所 | 一种提高大口径离子源离子束流均匀性的方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63279552A (ja) * | 1987-05-11 | 1988-11-16 | Nissin Electric Co Ltd | イオンビ−ム照射装置 |
| JPH08225938A (ja) * | 1995-02-22 | 1996-09-03 | Ishikawajima Harima Heavy Ind Co Ltd | イオンシャワードーピング装置 |
| JPH0974068A (ja) * | 1995-09-07 | 1997-03-18 | Hitachi Ltd | 薄膜半導体素子の製造方法 |
| US5825038A (en) * | 1996-11-26 | 1998-10-20 | Eaton Corporation | Large area uniform ion beam formation |
| JPH1116967A (ja) * | 1997-06-26 | 1999-01-22 | Hitachi Ltd | 試料検査装置 |
| JP2005347543A (ja) * | 2004-06-03 | 2005-12-15 | Sharp Corp | イオンドーピング方法およびイオンドーピング装置 |
| US20070063147A1 (en) * | 2004-06-14 | 2007-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Doping device |
| JP4048254B2 (ja) | 2004-09-30 | 2008-02-20 | 株式会社昭和真空 | イオンガン及びそれを用いた圧電素子の周波数調整装置 |
| US7078707B1 (en) * | 2005-01-04 | 2006-07-18 | Axcelis Technologies, Inc. | Ion beam scanning control methods and systems for ion implantation uniformity |
| JP2007123056A (ja) * | 2005-10-28 | 2007-05-17 | Matsushita Electric Ind Co Ltd | イオン注入装置とそのイオン注入制御方法 |
| GB2438893B (en) * | 2006-06-09 | 2010-10-27 | Applied Materials Inc | Ion beams in an ion implanter |
| US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
| JP2008039987A (ja) * | 2006-08-03 | 2008-02-21 | Kobe Steel Ltd | イオンビーム加工方法およびイオンビーム加工装置 |
| JP4288288B2 (ja) | 2007-03-29 | 2009-07-01 | 三井造船株式会社 | イオン注入装置 |
| JP2009152002A (ja) * | 2007-12-19 | 2009-07-09 | Nissin Ion Equipment Co Ltd | イオンビーム照射装置 |
-
2010
- 2010-04-13 JP JP2010092055A patent/JP5316899B2/ja active Active
- 2010-08-25 CN CN 201010262386 patent/CN102222595B/zh active Active
- 2010-09-07 KR KR20100087501A patent/KR101119795B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN102222595A (zh) | 2011-10-19 |
| KR101119795B1 (ko) | 2012-07-12 |
| KR20110114414A (ko) | 2011-10-19 |
| JP2011222386A (ja) | 2011-11-04 |
| CN102222595B (zh) | 2013-10-23 |
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