JP5315409B2 - 光導波路の製造方法、光導波路及びセンサアレンジメント - Google Patents
光導波路の製造方法、光導波路及びセンサアレンジメント Download PDFInfo
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- JP5315409B2 JP5315409B2 JP2011505378A JP2011505378A JP5315409B2 JP 5315409 B2 JP5315409 B2 JP 5315409B2 JP 2011505378 A JP2011505378 A JP 2011505378A JP 2011505378 A JP2011505378 A JP 2011505378A JP 5315409 B2 JP5315409 B2 JP 5315409B2
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N2021/7769—Measurement method of reaction-produced change in sensor
- G01N2021/7783—Transmission, loss
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- Chemical & Material Sciences (AREA)
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- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Optical Integrated Circuits (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
Claims (18)
- 第1の屈折指数をもつ第1の層と、
前記第1の層上の導波路構造とを備え、
前記導波路構造は、プレーナ構造であり、硫化亜鉛−二酸化ケイ素(ZnS−SiO2)を含む導波層を含み、前記導波層は、前記第1の屈折指数より高い屈折指数を持つ光導波路。 - 基板を更に備え、
前記第1の層が前記基板と前記導波路構造との間にサンドイッチされ、前記基板は、ガラス、ポリマー又は半導体物質から形成されている請求項1に記載の光導波路。 - 前記第1の層は、ガラス、二酸化ケイ素(SiO2)、半導体物質又はポリマーから形成されている請求項1または2に記載の光導波路。
- 第2の屈折指数をもつ金属被覆層を更に備え、前記導波路構造は、前記金属被覆層と前記第1の層との間にサンドイッチされ、前記第2の屈折指数は、前記導波層の前記屈折指数より低い請求項1〜3のいずれか1項に記載の光導波路。
- 前記導波路構造は、前記導波層と前記第1の層との間に形成された中間層を含む請求項1〜4のいずれか1項に記載の光導波路。
- 前記導波路構造は、前記導波層のトップに形成された更なる層を含む請求項1〜5のいずれか1項に記載の光導波路。
- プレーナ光導波路と、
前記プレーナ光導波路に結合される光を供給するように構成された光源と、
前記光に基づき補助信号を検出するように構成されたセンサと、
前記センサに接続され、前記補助信号の評価から前記プレーナ光導波路のトップに適用された検体の予め定められたパラメータを決定するように構成されるプロセッサと、
を備えるセンサアレンジメントであって、
前記プレーナ光導波路は、
第1の屈折指数をもつ第1の層と、
前記第1の層上のトップ上のプレーナ導波路構造と、を含み、
前記導波路構造は、硫化亜鉛−二酸化ケイ素(ZnS−SiO2)を含み、かつ、前記第1の屈折指数より高い屈折指数を有する導波層を含むセンサアレンジメント。 - 第1の屈折指数をもつ第1の層を形成し、
前記第1の層上に導波路構造を成膜し、
前記導波路構造は、プレーナ構造であり、硫化亜鉛−二酸化ケイ素(ZnS−SiO2)の導波層を含み、前記第1の屈折指数は、前記導波層の屈折指数より低い光導波路を製造する方法。 - 前記導波路構造を成膜する前記ステップの間であって、前記導波層が第1中間層上に成膜される前に、前記第1の中間層が前記第1の層上に成膜される請求項8に記載の方法。
- 前記第1の層は、ガラス、ポリマー又は半導体物質から形成された基板である請求項8または9に記載の方法。
- 前記導波路構造を成膜する前記ステップの前に、基板に前記第1の層を成膜することを更に含む請求項8または9に記載の方法。
- 前記基板は、ガラス、ポリマー又は半導体物質から形成されている請求項11に記載の方法。
- 前記第1の層は、二酸化ケイ素(SiO2)から形成されている請求項8〜12のいずれか1項に記載の方法。
- 前記導波路構造を成膜する前記ステップは、物理気相成膜プロセス、イオンプレーティングプロセス、蒸着プロセス、化学気相成膜プロセス、プラズマエンハンスド化学気相成膜プロセス、及びスパッタリングプロセスのグループからの一プロセスにより遂行される請求項8〜13のいずれか1項に記載の方法。
- 前記導波路構造を成膜する前記ステップは、スパッタリングプロセスにより遂行され、前記スパッタリングプロセス中、硫化亜鉛(ZnS)ターゲット又は硫化亜鉛−二酸化ケイ素(ZnS−SiO2)ターゲットが使用される請求項8〜13に記載の方法。
- 前記導波層内での硫化亜鉛(ZnS)の含有量は、70%と90%との間である請求項8〜15のいずれか1項に記載の方法。
- 前記導波路構造を成膜する前記ステップの間に、更なる層が前記導波層上に成膜される請求項8〜16のいずれか1項に記載の方法。
- 前記導波路構造のトップに第2の屈折指数をもつ第2の物質の金属被覆層を成膜し、前記第2の屈折指数は、前記導波層の前記屈折指数より低い請求項8〜17のいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08007662.3A EP2110694B1 (en) | 2008-04-18 | 2008-04-18 | Method for manufacturing an optical waveguide, optical waveguide, and sensor arrangement |
EP08007662.3 | 2008-04-28 | ||
PCT/EP2009/001145 WO2009132726A1 (en) | 2008-04-18 | 2009-02-18 | Method for manufacturing an optical waveguide, optical waveguide, and sensor arrangement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011521278A JP2011521278A (ja) | 2011-07-21 |
JP5315409B2 true JP5315409B2 (ja) | 2013-10-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011505378A Expired - Fee Related JP5315409B2 (ja) | 2008-04-18 | 2009-02-18 | 光導波路の製造方法、光導波路及びセンサアレンジメント |
Country Status (5)
Country | Link |
---|---|
US (1) | US8811790B2 (ja) |
EP (1) | EP2110694B1 (ja) |
JP (1) | JP5315409B2 (ja) |
CN (1) | CN102066997B (ja) |
WO (1) | WO2009132726A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5490560B2 (ja) * | 2010-02-16 | 2014-05-14 | 富士フイルム株式会社 | 導光フィルム及び該導光フィルムを用いた植物育成方法 |
US9140604B2 (en) * | 2011-06-17 | 2015-09-22 | Kla-Tencor Corporation | Wafer level spectrometer |
CN102956652A (zh) * | 2011-08-19 | 2013-03-06 | 深圳光启高等理工研究院 | 光电传感器 |
US9360302B2 (en) | 2011-12-15 | 2016-06-07 | Kla-Tencor Corporation | Film thickness monitor |
CN103293597B (zh) * | 2013-05-14 | 2015-11-18 | 北京航空航天大学 | 一种无掺杂硅基二氧化硅波导 |
US10267733B2 (en) * | 2014-05-22 | 2019-04-23 | Imec Vzw | Semiconductor device for detecting fluorescent particles |
US9970816B2 (en) | 2014-09-11 | 2018-05-15 | Heptagon Micro Optics Pte. Ltd. | Light sensor modules and spectrometers including an optical grating structure |
CN105223172B (zh) * | 2015-09-16 | 2018-01-02 | 深圳硅基传感科技有限公司 | 利用有机激光介质薄膜对气体或液体高灵敏度检测的方法 |
GB2550561A (en) * | 2016-05-17 | 2017-11-29 | Sumitomo Chemical Co | Apparatus for optically exciting and detecting fluorescence |
TW202219491A (zh) | 2016-06-01 | 2022-05-16 | 美商寬騰矽公司 | 用於偵測及分析分子之光子結構及積體裝置 |
US10197732B2 (en) * | 2016-08-26 | 2019-02-05 | Corning Optical Communications LLC | Methods for forming ion-exchanged waveguides in glass substrates |
JP6530521B2 (ja) * | 2017-03-06 | 2019-06-12 | 旭化成エレクトロニクス株式会社 | 光導波路及び光学式濃度測定装置 |
US11313796B2 (en) | 2017-03-06 | 2022-04-26 | Asahi Kasei Microdevices Corporation | Optical waveguide and optical concentration measuring apparatus comprising a support with a shifted connecting portion |
EP3385761A1 (en) * | 2017-04-03 | 2018-10-10 | Indigo Diabetes N.V. | Optical assembly with protective layer |
FR3066615B1 (fr) * | 2017-05-17 | 2019-11-15 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Puce photonique a structure de collimation integree |
CN108919420A (zh) * | 2018-07-17 | 2018-11-30 | 宁波大学 | 一种应用于中红外波段的硫系波导结构 |
US10928318B2 (en) | 2018-08-31 | 2021-02-23 | Asahi Kasei Microdevices Corporation | Optical waveguide and optical concentration measuring apparatus |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57173804A (en) * | 1981-04-20 | 1982-10-26 | Matsushita Electric Ind Co Ltd | Substrate for optical circuit |
JPS61204545A (ja) * | 1985-03-08 | 1986-09-10 | Agency Of Ind Science & Technol | 水素検知光センサ− |
US4749245A (en) | 1985-03-11 | 1988-06-07 | Kuraray Co., Ltd. | Thin film waveguide device and manufacturing method for making same |
US4715672A (en) | 1986-01-06 | 1987-12-29 | American Telephone And Telegraph Company | Optical waveguide utilizing an antiresonant layered structure |
JPS63103453A (ja) | 1986-10-20 | 1988-05-09 | Matsushita Electric Ind Co Ltd | 光学式情報記録部材 |
US4847132A (en) | 1986-10-20 | 1989-07-11 | Matsushita Electric Industrial Co., Ltd. | Protective layer for optical information recording medium |
JPH01118105A (ja) | 1987-10-30 | 1989-05-10 | Brother Ind Ltd | 薄膜光機能素子 |
FR2625333B1 (fr) | 1987-12-24 | 1993-09-10 | Commissariat Energie Atomique | Procede de fabrication de microguides de lumiere a faibles pertes de propagation optique par depot de multicouches |
DE4228853C2 (de) | 1991-09-18 | 1993-10-21 | Schott Glaswerke | Optischer Wellenleiter mit einem planaren oder nur geringfügig gewölbten Substrat und Verfahren zu dessen Herstellung sowie Verwendung eines solchen |
CH688165A5 (de) | 1993-07-26 | 1997-05-30 | Balzers Hochvakuum | Verfahren zur Herstellung eines optischen Wellenleiters und darnach hergestellter optischer Wellenleiter |
SK151296A3 (en) | 1994-05-27 | 1997-07-09 | Ciba Geigy Ag | Process for detecting evanescently excited luminescence |
CH693368A5 (de) | 1994-12-09 | 2003-06-30 | Unaxis Balzers Ag | Verfahren zur Herstellung eines Beugungsgitters, Lichtleiterbauteil sowie deren Verwendungen. |
CA2219769A1 (en) | 1995-05-12 | 1996-11-14 | Novartis Ag | Sensor platform and method for the parallel detection of a plurality of analytes using evanescently excited luminescence |
JP2785763B2 (ja) | 1995-09-27 | 1998-08-13 | 日本電気株式会社 | 相変化光ディスク |
US5835650A (en) * | 1995-11-16 | 1998-11-10 | Matsushita Electric Industrial Co., Ltd. | Optical apparatus and method for producing the same |
ATE202630T1 (de) | 1996-08-16 | 2001-07-15 | Zeptosens Ag | Optische detektionsvorrichtung |
WO1998009156A1 (en) | 1996-08-29 | 1998-03-05 | Novartis Ag | Optical chemical / biochemical sensor |
DE59712460D1 (de) | 1996-11-18 | 2005-12-01 | Novartis Ag | Messvorrichtung mit einem planaren optischen wellenleiter |
AU729612B2 (en) * | 1996-11-19 | 2001-02-08 | Alcatel | Optical waveguide with Bragg grating |
US5998851A (en) * | 1996-12-04 | 1999-12-07 | The Furukawa Electric Co., Ltd. | Optical waveguide type photodiode and a process of producing the same |
JPH11238252A (ja) | 1997-12-18 | 1999-08-31 | Tdk Corp | 光記録媒体 |
GB9815271D0 (en) * | 1998-07-14 | 1998-09-09 | Cambridge Display Tech Ltd | Particles and devices comprising particles |
US6240226B1 (en) * | 1998-08-13 | 2001-05-29 | Lucent Technologies Inc. | Polymer material and method for optical switching and modulation |
US6589712B1 (en) * | 1998-11-04 | 2003-07-08 | Yi-Ren Hsu | Method for forming a passivation layer using polyimide layer as a mask |
JP2000298875A (ja) * | 1999-02-13 | 2000-10-24 | Sony Corp | 光記録媒体 |
AU6834700A (en) * | 1999-08-13 | 2001-03-13 | Zeptosens Ag | Device and method for determining multiple analytes |
DE69909480T2 (de) * | 1999-09-15 | 2004-04-15 | Csem Centre Suisse D'electronique Et De Microtechnique S.A. | Integriert-optischer Sensor |
US7065035B1 (en) | 1999-10-25 | 2006-06-20 | Matsushita Electric Industrial Co., Ltd. | Optical multilayer disk, multiwavelength light source, and optical system using them |
US6510263B1 (en) | 2000-01-27 | 2003-01-21 | Unaxis Balzers Aktiengesellschaft | Waveguide plate and process for its production and microtitre plate |
JP2002162345A (ja) * | 2000-11-22 | 2002-06-07 | Nippon Telegr & Teleph Corp <Ntt> | 分光機能を持った光導波路型spr現象計測チップ及びspr現象測定装置 |
JP3916125B2 (ja) | 2001-03-12 | 2007-05-16 | 日鉱金属株式会社 | ZnS−SiO2スパッタリングターゲット及び該ターゲットを使用してZnS−SiO2相変化型光ディスク保護膜を形成した光記録媒体 |
US6493072B1 (en) * | 2001-09-28 | 2002-12-10 | Agilent Technologies, Inc. | System and method for coupling light through a waveguide in a planar optical device |
US6605330B2 (en) * | 2001-11-13 | 2003-08-12 | Eastman Kodak Company | Phase-change recording element for write once applications |
JP4198918B2 (ja) * | 2002-02-14 | 2008-12-17 | 日鉱金属株式会社 | 硫化亜鉛を主成分とするスパッタリングターゲット及び該スパッタリングターゲットの製造方法 |
EP1561765A4 (en) | 2002-11-08 | 2007-07-04 | Mitsubishi Chem Corp | RADIATION-HARDENING RESIN COMPOSITION AND HARDENED PRODUCT THEREOF |
CN101650955B (zh) * | 2003-03-04 | 2011-08-24 | Jx日矿日石金属株式会社 | 溅射靶、光信息记录介质用薄膜及其制造方法 |
FR2854248B1 (fr) | 2003-04-22 | 2005-08-26 | Cit Alcatel | Filtre optique reconfigurable |
WO2004105009A1 (ja) | 2003-05-22 | 2004-12-02 | Ricoh Company, Ltd. | 光記録媒体 |
JP2005025910A (ja) * | 2003-06-13 | 2005-01-27 | Nec Corp | 光学的情報記録媒体及びその製造方法 |
JP2005017429A (ja) * | 2003-06-24 | 2005-01-20 | Nitto Denko Corp | 光導波路の製造方法 |
JP2005037464A (ja) * | 2003-07-16 | 2005-02-10 | Matsushita Electric Ind Co Ltd | 光導波路とその製造方法 |
JP3999717B2 (ja) * | 2003-09-02 | 2007-10-31 | 日本電信電話株式会社 | 光導波路型センサ |
US7151738B2 (en) * | 2003-11-20 | 2006-12-19 | Seagate Technology Llc | Apparatus and method for coupling light to a thin film optical waveguide |
JP2006209813A (ja) * | 2005-01-25 | 2006-08-10 | Tdk Corp | 光記録媒体 |
US7817896B2 (en) | 2005-04-29 | 2010-10-19 | Corning Incorporated | Optical waveguides containing quantum dot guiding layers and methods of manufacture |
JP2008059684A (ja) * | 2006-08-31 | 2008-03-13 | Ricoh Co Ltd | 光情報記録媒体 |
EP2250486A1 (en) * | 2008-02-25 | 2010-11-17 | Koninklijke Philips Electronics N.V. | Optical sensor for measuring emission light from an analyte |
-
2008
- 2008-04-18 EP EP08007662.3A patent/EP2110694B1/en active Active
-
2009
- 2009-02-18 WO PCT/EP2009/001145 patent/WO2009132726A1/en active Application Filing
- 2009-02-18 JP JP2011505378A patent/JP5315409B2/ja not_active Expired - Fee Related
- 2009-02-18 CN CN200980113509.4A patent/CN102066997B/zh not_active Expired - Fee Related
- 2009-02-18 US US12/988,421 patent/US8811790B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102066997B (zh) | 2014-05-14 |
WO2009132726A8 (en) | 2010-12-16 |
US8811790B2 (en) | 2014-08-19 |
JP2011521278A (ja) | 2011-07-21 |
CN102066997A (zh) | 2011-05-18 |
US20110112769A1 (en) | 2011-05-12 |
EP2110694B1 (en) | 2013-08-14 |
WO2009132726A1 (en) | 2009-11-05 |
EP2110694A1 (en) | 2009-10-21 |
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