JP5303236B2 - 光半導体装置 - Google Patents

光半導体装置 Download PDF

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Publication number
JP5303236B2
JP5303236B2 JP2008256013A JP2008256013A JP5303236B2 JP 5303236 B2 JP5303236 B2 JP 5303236B2 JP 2008256013 A JP2008256013 A JP 2008256013A JP 2008256013 A JP2008256013 A JP 2008256013A JP 5303236 B2 JP5303236 B2 JP 5303236B2
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Japan
Prior art keywords
quantum dot
layer
active layer
density
layers
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JP2008256013A
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English (en)
Japanese (ja)
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JP2010087325A (ja
JP2010087325A5 (enExample
Inventor
研一 西
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QD Laser Inc
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QD Laser Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by QD Laser Inc filed Critical QD Laser Inc
Priority to JP2008256013A priority Critical patent/JP5303236B2/ja
Priority to US13/121,528 priority patent/US8625193B2/en
Priority to PCT/JP2009/063598 priority patent/WO2010038542A1/ja
Priority to CN2009801388365A priority patent/CN102171898A/zh
Publication of JP2010087325A publication Critical patent/JP2010087325A/ja
Publication of JP2010087325A5 publication Critical patent/JP2010087325A5/ja
Application granted granted Critical
Publication of JP5303236B2 publication Critical patent/JP5303236B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2008256013A 2008-10-01 2008-10-01 光半導体装置 Active JP5303236B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008256013A JP5303236B2 (ja) 2008-10-01 2008-10-01 光半導体装置
US13/121,528 US8625193B2 (en) 2008-10-01 2009-07-30 Optical semiconductor device
PCT/JP2009/063598 WO2010038542A1 (ja) 2008-10-01 2009-07-30 光半導体装置
CN2009801388365A CN102171898A (zh) 2008-10-01 2009-07-30 光半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008256013A JP5303236B2 (ja) 2008-10-01 2008-10-01 光半導体装置

Publications (3)

Publication Number Publication Date
JP2010087325A JP2010087325A (ja) 2010-04-15
JP2010087325A5 JP2010087325A5 (enExample) 2011-04-21
JP5303236B2 true JP5303236B2 (ja) 2013-10-02

Family

ID=42073319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008256013A Active JP5303236B2 (ja) 2008-10-01 2008-10-01 光半導体装置

Country Status (4)

Country Link
US (1) US8625193B2 (enExample)
JP (1) JP5303236B2 (enExample)
CN (1) CN102171898A (enExample)
WO (1) WO2010038542A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6601791B2 (ja) * 2015-07-13 2019-11-06 株式会社Ｑｄレーザ 半導体レーザ、光モジュール、光通信装置、及び光通信システム
US10840676B2 (en) * 2018-05-10 2020-11-17 X Development Llc Optoelectronic devices having spatially varying distribution of quantum confined nanostructures
JP7543862B2 (ja) * 2020-11-13 2024-09-03 株式会社デンソー 半導体レーザ装置
JP7619195B2 (ja) * 2021-07-13 2025-01-22 株式会社デンソー 光半導体素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3236325B2 (ja) * 1991-11-19 2001-12-10 富士通株式会社 半導体発光装置
JP3468866B2 (ja) 1994-09-16 2003-11-17 富士通株式会社 ３次元量子閉じ込めを利用した半導体装置
JP3008927B2 (ja) * 1998-04-17 2000-02-14 日本電気株式会社 半導体レーザ及び半導体光アンプ
JP2001210910A (ja) * 1999-11-17 2001-08-03 Mitsubishi Electric Corp 半導体レーザ
JP4006729B2 (ja) 2002-04-16 2007-11-14 富士通株式会社 自己形成量子ドットを用いた半導体発光素子
JP4822150B2 (ja) * 2002-12-16 2011-11-24 独立行政法人科学技術振興機構 不均一な量子ドットを有する半導体積層構造、それを用いた発光ダイオード、半導体レーザダイオード及び半導体光増幅器並びにそれらの製造方法
JP2004289010A (ja) * 2003-03-24 2004-10-14 Sony Corp 発光装置
JP2005039107A (ja) * 2003-07-17 2005-02-10 Sharp Corp 酸化物半導体レーザ素子
JP4822244B2 (ja) * 2004-03-19 2011-11-24 富士通株式会社 自己形成型量子ドットを用いた半導体発光素子
JP2008098299A (ja) * 2006-10-10 2008-04-24 Mitsubishi Electric Corp 半導体光素子及びその製造方法
JP5145183B2 (ja) 2008-09-26 2013-02-13 日本電産サンキョー株式会社 扉ロック装置

Also Published As

Publication number Publication date
JP2010087325A (ja) 2010-04-15
CN102171898A (zh) 2011-08-31
US8625193B2 (en) 2014-01-07
WO2010038542A1 (ja) 2010-04-08
US20110181945A1 (en) 2011-07-28

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