JP5297584B2 - 半導体装置、半導体装置を用いた温度センサー及び半導体装置の作製方法 - Google Patents
半導体装置、半導体装置を用いた温度センサー及び半導体装置の作製方法 Download PDFInfo
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- JP5297584B2 JP5297584B2 JP2006271889A JP2006271889A JP5297584B2 JP 5297584 B2 JP5297584 B2 JP 5297584B2 JP 2006271889 A JP2006271889 A JP 2006271889A JP 2006271889 A JP2006271889 A JP 2006271889A JP 5297584 B2 JP5297584 B2 JP 5297584B2
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Images
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| JP5171232B2 (ja) * | 2006-12-15 | 2013-03-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2009049287A (ja) * | 2007-08-22 | 2009-03-05 | Funai Electric Advanced Applied Technology Research Institute Inc | スイッチング素子、スイッチング素子の製造方法及びメモリ素子アレイ |
| US8399356B2 (en) * | 2008-03-28 | 2013-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| WO2012086099A1 (ja) | 2010-12-21 | 2012-06-28 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP5666319B2 (ja) | 2011-01-12 | 2015-02-12 | 東京エレクトロン株式会社 | 温度センサ、温度センサの製造方法、半導体装置及び半導体装置の製造方法 |
| CN102231424B (zh) * | 2011-06-24 | 2014-04-30 | 清华大学 | 相变存储单元及相变存储器 |
| GB2569196B (en) | 2017-12-11 | 2022-04-20 | Pragmatic Printing Ltd | Schottky diode |
| WO2020255617A1 (ja) * | 2019-06-21 | 2020-12-24 | ローム株式会社 | 半導体装置およびその製造方法 |
| JP7388015B2 (ja) * | 2019-07-02 | 2023-11-29 | セイコーエプソン株式会社 | 集積回路装置、発振器、電子機器及び移動体 |
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| US5109256A (en) * | 1990-08-17 | 1992-04-28 | National Semiconductor Corporation | Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication |
| JP3254113B2 (ja) * | 1994-08-30 | 2002-02-04 | セイコーインスツルメンツ株式会社 | 加速度センサ |
| JPH09135387A (ja) * | 1995-11-08 | 1997-05-20 | Nikon Corp | 熱型赤外線イメージセンサ |
| JPH09318436A (ja) * | 1996-05-28 | 1997-12-12 | Nikon Corp | 熱型赤外線センサ及びその製造方法並びにこれを用いたイメージセンサ |
| JP2005209710A (ja) * | 2004-01-20 | 2005-08-04 | Hitachi Ulsi Systems Co Ltd | 半導体集積回路装置の製造方法 |
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