JP5295170B2 - アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法 - Google Patents

アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法 Download PDF

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JP5295170B2
JP5295170B2 JP2010108104A JP2010108104A JP5295170B2 JP 5295170 B2 JP5295170 B2 JP 5295170B2 JP 2010108104 A JP2010108104 A JP 2010108104A JP 2010108104 A JP2010108104 A JP 2010108104A JP 5295170 B2 JP5295170 B2 JP 5295170B2
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hydrogen
forming
amorphous oxide
field effect
film
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JP2010183108A (ja
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達哉 岩崎
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Canon Inc
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JP2010108104A 2005-09-06 2010-05-10 アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法 Active JP5295170B2 (ja)

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JP2010108104A JP5295170B2 (ja) 2005-09-06 2010-05-10 アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法

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Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456794B (zh) 2008-12-19 2016-08-10 株式会社半导体能源研究所 晶体管的制造方法
KR101810699B1 (ko) 2009-06-30 2018-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR101915421B1 (ko) * 2009-06-30 2018-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
CN102576677B (zh) * 2009-09-24 2015-07-22 株式会社半导体能源研究所 半导体元件及其制造方法
WO2011043163A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101801538B1 (ko) 2009-10-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
CN113903796A (zh) 2009-10-16 2022-01-07 株式会社半导体能源研究所 逻辑电路和半导体器件
KR101801959B1 (ko) 2009-10-21 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 액정 표시 장치를 구비하는 전자기기
WO2011048968A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR101847656B1 (ko) 2009-10-21 2018-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN112447130A (zh) * 2009-10-21 2021-03-05 株式会社半导体能源研究所 显示装置和包括显示装置的电子设备
CN103794612B (zh) * 2009-10-21 2018-09-07 株式会社半导体能源研究所 半导体装置
KR102023128B1 (ko) 2009-10-21 2019-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
MY163862A (en) * 2009-10-30 2017-10-31 Semiconductor Energy Lab Logic circuit and semiconductor device
EP2494601A4 (en) 2009-10-30 2016-09-07 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101752518B1 (ko) 2009-10-30 2017-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102668095B (zh) * 2009-10-30 2016-08-03 株式会社半导体能源研究所 晶体管
CN104485341A (zh) * 2009-11-06 2015-04-01 株式会社半导体能源研究所 半导体装置
KR101861980B1 (ko) 2009-11-06 2018-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104600074A (zh) * 2009-11-06 2015-05-06 株式会社半导体能源研究所 半导体装置
KR20120116403A (ko) * 2009-11-06 2012-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 터치 패널 및 터치 패널의 구동 방법
KR20180014255A (ko) * 2009-11-13 2018-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
CN102598266B (zh) * 2009-11-20 2015-04-22 株式会社半导体能源研究所 半导体装置
KR20120099475A (ko) 2009-12-04 2012-09-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5727204B2 (ja) * 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101777624B1 (ko) 2009-12-25 2017-09-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102714184B (zh) 2009-12-28 2016-05-18 株式会社半导体能源研究所 半导体器件
KR101762316B1 (ko) 2009-12-28 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101861991B1 (ko) 2010-01-20 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 신호 처리 회로 및 신호 처리 회로를 구동하기 위한 방법
WO2011105210A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114867A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
KR101884031B1 (ko) 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101859361B1 (ko) 2010-07-16 2018-05-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012014790A1 (en) 2010-07-27 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI559409B (zh) 2010-08-16 2016-11-21 半導體能源研究所股份有限公司 半導體裝置之製造方法
DE112011102837B4 (de) * 2010-08-27 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Speichereinrichtung und Halbleitereinrichtung mit Doppelgate und Oxidhalbleiter
US8634228B2 (en) * 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
WO2012029637A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI654764B (zh) 2010-11-11 2019-03-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5864054B2 (ja) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 半導体装置
JP5839474B2 (ja) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 信号処理回路
TWI545652B (zh) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2013089115A1 (en) 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN104022044B (zh) 2013-03-01 2017-05-10 北京京东方光电科技有限公司 氧化物薄膜晶体管及其制备方法、阵列基板和显示装置
CN104037234A (zh) * 2014-07-01 2014-09-10 武汉大学 一种氢钝化氧化锌基薄膜晶体管及其制备方法
CN104112779A (zh) * 2014-07-29 2014-10-22 叶志 基于氘化金属氧化物薄膜的薄膜晶体管
JP2017175022A (ja) 2016-03-24 2017-09-28 株式会社Ｊｏｌｅｄ 薄膜トランジスタ
CN106298880B (zh) * 2016-10-13 2019-08-27 中山大学 氧化物薄膜及制备方法、晶体管及制备方法、显示背板
CN108987469B (zh) * 2018-06-26 2020-09-15 浙江大学 一种非晶ZnMgSnO薄膜与薄膜晶体管及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (ja) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3479375B2 (ja) * 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JP2002289859A (ja) * 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4164562B2 (ja) * 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP2003179233A (ja) * 2001-12-13 2003-06-27 Fuji Xerox Co Ltd 薄膜トランジスタ、及びそれを備えた表示素子
JP2003281941A (ja) * 2002-01-16 2003-10-03 Mitsui Chemicals Inc 透明導電性フィルム及びそれを用いたエレクトロルミネッセンス発光素子
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US20050017244A1 (en) * 2003-07-25 2005-01-27 Randy Hoffman Semiconductor device
JP4560502B2 (ja) * 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ

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JP5508555B2 (ja) 2014-06-04
JP5710041B2 (ja) 2015-04-30
CN101258607B (zh) 2011-01-05
JP2013128127A (ja) 2013-06-27
CN101258607A (zh) 2008-09-03
JP2010183108A (ja) 2010-08-19
JP2014160830A (ja) 2014-09-04

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