JP5293260B2 - 熱電素子の成膜方法 - Google Patents
熱電素子の成膜方法 Download PDFInfo
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- JP5293260B2 JP5293260B2 JP2009039221A JP2009039221A JP5293260B2 JP 5293260 B2 JP5293260 B2 JP 5293260B2 JP 2009039221 A JP2009039221 A JP 2009039221A JP 2009039221 A JP2009039221 A JP 2009039221A JP 5293260 B2 JP5293260 B2 JP 5293260B2
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- Prior art keywords
- film
- thermoelectric element
- pvd
- plating
- thermoelectric
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Description
2 PVD膜
3 バリア膜
10 スパッタリング装置(PVD装置)
20 メッキ装置
S1 エッチング工程
S2 PVD成膜工程
S3 メッキ成膜工程
Claims (2)
- エッチングガスにより熱電素子をエッチング処理するエッチング工程と、
前記熱電素子にPVD法によりPVD膜を成膜するPVD成膜工程と、
前記PVD膜を形成した前記熱電素子にメッキ法によりバリア膜を成膜するメッキ成膜工程と、を備え、
前記エッチングガスは、アルゴンとアンモニアの混合ガスである、熱電素子の成膜方法。 - 前記PVD成膜工程では、前記熱電素子に正のバイアス電圧を付与しながら前記PVD膜を成膜する、請求項1に記載の熱電素子の成膜方法。
Priority Applications (1)
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JP2009039221A JP5293260B2 (ja) | 2009-02-23 | 2009-02-23 | 熱電素子の成膜方法 |
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JP2009039221A JP5293260B2 (ja) | 2009-02-23 | 2009-02-23 | 熱電素子の成膜方法 |
Publications (2)
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JP2010199131A JP2010199131A (ja) | 2010-09-09 |
JP5293260B2 true JP5293260B2 (ja) | 2013-09-18 |
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JP2009039221A Expired - Fee Related JP5293260B2 (ja) | 2009-02-23 | 2009-02-23 | 熱電素子の成膜方法 |
Country Status (1)
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JP (1) | JP5293260B2 (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000026964A (ja) * | 1992-10-28 | 2000-01-25 | Ulvac Corp | 成膜方法及び装置 |
JP3938450B2 (ja) * | 1999-07-06 | 2007-06-27 | 株式会社アルバック | バリア膜製造方法 |
JP2001028462A (ja) * | 1999-07-13 | 2001-01-30 | Yamaha Corp | 熱電素子及び熱電素子の製造方法 |
JP3918424B2 (ja) * | 2000-10-16 | 2007-05-23 | 松下電工株式会社 | 熱電変換モジュールの製造方法 |
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2009
- 2009-02-23 JP JP2009039221A patent/JP5293260B2/ja not_active Expired - Fee Related
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JP2010199131A (ja) | 2010-09-09 |
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