JP5290164B2 - シリコン変調器のオフセット調整配置 - Google Patents
シリコン変調器のオフセット調整配置 Download PDFInfo
- Publication number
- JP5290164B2 JP5290164B2 JP2009515440A JP2009515440A JP5290164B2 JP 5290164 B2 JP5290164 B2 JP 5290164B2 JP 2009515440 A JP2009515440 A JP 2009515440A JP 2009515440 A JP2009515440 A JP 2009515440A JP 5290164 B2 JP5290164 B2 JP 5290164B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- modulation device
- light modulation
- based light
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 56
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 230000003287 optical effect Effects 0.000 claims abstract description 40
- 230000008859 change Effects 0.000 claims description 4
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims description 2
- 230000004044 response Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 229910021332 silicide Inorganic materials 0.000 abstract description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 7
- 238000012546 transfer Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 238000010792 warming Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000382 optic material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 101100167439 Arabidopsis thaliana CLPC1 gene Proteins 0.000 description 1
- 101100219315 Arabidopsis thaliana CYP83A1 gene Proteins 0.000 description 1
- 101100512568 Arabidopsis thaliana MED33B gene Proteins 0.000 description 1
- 101100269674 Mus musculus Alyref2 gene Proteins 0.000 description 1
- 101100140580 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) REF2 gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/126—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode push-pull
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81391306P | 2006-06-15 | 2006-06-15 | |
| US60/813,913 | 2006-06-15 | ||
| US92838607P | 2007-05-09 | 2007-05-09 | |
| US60/928,386 | 2007-05-09 | ||
| US11/810,591 US7447395B2 (en) | 2006-06-15 | 2007-06-06 | Silicon modulator offset tuning arrangement |
| US11/810,591 | 2007-06-06 | ||
| PCT/US2007/013692 WO2007146233A2 (en) | 2006-06-15 | 2007-06-11 | Silicon modulator offset tuning arrangement |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009540385A JP2009540385A (ja) | 2009-11-19 |
| JP2009540385A5 JP2009540385A5 (enExample) | 2010-07-08 |
| JP5290164B2 true JP5290164B2 (ja) | 2013-09-18 |
Family
ID=38832457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009515440A Expired - Fee Related JP5290164B2 (ja) | 2006-06-15 | 2007-06-11 | シリコン変調器のオフセット調整配置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7447395B2 (enExample) |
| EP (1) | EP2027497B1 (enExample) |
| JP (1) | JP5290164B2 (enExample) |
| KR (1) | KR101456307B1 (enExample) |
| CN (1) | CN101467083B (enExample) |
| WO (1) | WO2007146233A2 (enExample) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7697793B2 (en) * | 2006-06-15 | 2010-04-13 | Lightwire, Inc. | Silicon modulator offset tuning arrangement |
| US7865053B2 (en) * | 2006-12-29 | 2011-01-04 | Alcatel-Lucent Usa Inc. | Multi-semiconductor slab electro-optic modulator and process for using the same |
| US8098968B2 (en) * | 2007-09-04 | 2012-01-17 | International Business Machines Corporation | Silicide thermal heaters for silicon-on-insulator nanophotonic devices |
| US8179935B2 (en) * | 2008-04-01 | 2012-05-15 | Hewlett-Packard Development Company, L.P. | Tunable optical resonator |
| US8148265B2 (en) * | 2008-08-29 | 2012-04-03 | Bae Systems Information And Electronic Systems Integration Inc. | Two-step hardmask fabrication methodology for silicon waveguides |
| US7693354B2 (en) * | 2008-08-29 | 2010-04-06 | Bae Systems Information And Electronic Systems Integration Inc. | Salicide structures for heat-influenced semiconductor applications |
| US7715663B2 (en) * | 2008-08-29 | 2010-05-11 | Bae Systems Information And Electronic Systems Integration Inc. | Integrated optical latch |
| US8467635B2 (en) * | 2008-12-02 | 2013-06-18 | Nippon Telegraph And Telephone Corporation | Optical modulator |
| US7847353B2 (en) * | 2008-12-05 | 2010-12-07 | Bae Systems Information And Electronic Systems Integration Inc. | Multi-thickness semiconductor with fully depleted devices and photonic integration |
| US8520984B2 (en) * | 2009-06-12 | 2013-08-27 | Cisco Technology, Inc. | Silicon-based optical modulator with improved efficiency and chirp control |
| US8836100B2 (en) | 2009-12-01 | 2014-09-16 | Cisco Technology, Inc. | Slotted configuration for optimized placement of micro-components using adhesive bonding |
| KR101284177B1 (ko) * | 2009-12-09 | 2013-07-10 | 한국전자통신연구원 | 광전 소자 |
| SG173939A1 (en) * | 2010-03-01 | 2011-09-29 | Nec Corp | Silicon-based electro-optic device |
| US9122085B2 (en) * | 2010-10-07 | 2015-09-01 | Alcatel Lucent | Thermally controlled semiconductor optical waveguide |
| US8358897B1 (en) * | 2010-12-10 | 2013-01-22 | Aurrion, Llc | High index bonding layer for hybrid photonic devices |
| US9039907B2 (en) * | 2011-07-20 | 2015-05-26 | Imec | Methods for improving integrated photonic device uniformity |
| CN104969103A (zh) * | 2012-04-30 | 2015-10-07 | 惠普发展公司,有限责任合伙企业 | 混杂mos光调制器 |
| WO2015016466A1 (ko) * | 2013-07-30 | 2015-02-05 | 전자부품연구원 | 실리콘 링 변조기의 중심 파장을 제어하는 실시간 피드백 시스템 |
| US9395563B2 (en) * | 2013-08-01 | 2016-07-19 | Samsung Electronics Co., Ltd. | Electro-optic modulator and optic transmission modulator including the same |
| US9291776B2 (en) * | 2013-11-27 | 2016-03-22 | Huawei Technologies Co., Ltd. | Apparatus and method for differential thermal optical switch control |
| JP6413296B2 (ja) * | 2014-03-27 | 2018-10-31 | 日本電気株式会社 | 光変調用素子および光変調器 |
| JP2015191068A (ja) | 2014-03-27 | 2015-11-02 | 日本電気株式会社 | 光変調器の出力モニター方法および出力モニター装置 |
| US10366883B2 (en) | 2014-07-30 | 2019-07-30 | Hewlett Packard Enterprise Development Lp | Hybrid multilayer device |
| EP3215883A4 (en) * | 2014-11-05 | 2018-07-11 | Elenion Technologies, LLC | Photonic integrated circuit incorporating a bandgap temperature sensor |
| US9513437B2 (en) * | 2014-11-05 | 2016-12-06 | Coriant Advanced Technology, LLC | Photonic integrated circuit incorporating a bandgap temperature sensor |
| US10088697B2 (en) * | 2015-03-12 | 2018-10-02 | International Business Machines Corporation | Dual-use electro-optic and thermo-optic modulator |
| US10658177B2 (en) | 2015-09-03 | 2020-05-19 | Hewlett Packard Enterprise Development Lp | Defect-free heterogeneous substrates |
| FR3047811B1 (fr) * | 2016-02-12 | 2018-03-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Modulateur des pertes de propagation et de l'indice de propagation d'un signal optique guide |
| US11088244B2 (en) | 2016-03-30 | 2021-08-10 | Hewlett Packard Enterprise Development Lp | Devices having substrates with selective airgap regions |
| US10135542B2 (en) * | 2016-12-15 | 2018-11-20 | Rockley Photonics Limited | Optical modulators |
| CN106773144B (zh) * | 2016-12-20 | 2020-04-14 | 武汉光迅科技股份有限公司 | 一种用于硅光调制器自动偏压控制的电压处理方法及其装置 |
| US10353267B2 (en) * | 2016-12-30 | 2019-07-16 | Huawei Technologies Co., Ltd. | Carrier-effect based optical switch |
| US10381801B1 (en) | 2018-04-26 | 2019-08-13 | Hewlett Packard Enterprise Development Lp | Device including structure over airgap |
| CN111142270B (zh) * | 2018-11-05 | 2022-10-11 | 青岛海信激光显示股份有限公司 | 一种激光散斑消除装置及其激光显示设备 |
| FR3088449A1 (fr) * | 2018-11-12 | 2020-05-15 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Commutateur optoelectronique a interferometre de mach-zehnder |
| US11269201B2 (en) * | 2019-04-19 | 2022-03-08 | Source Photonics, Inc. | Multi-layer p-n junction based phase shifter and methods of manufacturing and using the same |
| US11378825B2 (en) * | 2019-09-17 | 2022-07-05 | Lumentum Operations Llc | Electrical-optical modulator |
| US11175451B2 (en) * | 2019-09-26 | 2021-11-16 | Intel Corporation | Mechanisms for refractive index tuning semiconductor photonic devices |
| CZ308572B6 (cs) * | 2019-10-11 | 2020-12-09 | Ăšstav fotoniky a elektroniky AV ÄŚR, v.v.i. | Termooptický prostorový modulátor světla |
| US11513375B2 (en) | 2019-12-16 | 2022-11-29 | Cisco Technology, Inc. | Silicon thermal-optic phase shifter with improved optical performance |
| CN114371560B (zh) * | 2020-10-15 | 2025-04-25 | 联合微电子中心有限责任公司 | 双向可调的热光移相器及其网络结构 |
| CN114035348B (zh) * | 2021-12-16 | 2023-10-03 | 武汉光谷信息光电子创新中心有限公司 | 微环调制器 |
| US12013568B2 (en) * | 2022-03-15 | 2024-06-18 | Hewlett Packard Enterprise Development Lp | Hybrid metal oxide semiconductor capacitor with enhanced phase tuning |
| EP4468070A1 (en) * | 2023-05-24 | 2024-11-27 | GlobalFoundries U.S. Inc. | Assisted thermo-optic phase shifters |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US716821A (en) * | 1901-05-14 | 1902-12-23 | James A Ekin Criswell | Machine for making matches. |
| US4359773A (en) * | 1980-07-07 | 1982-11-16 | Bell Telephone Laboratories, Incorporated | Semiconductor lasers with selective driving circuit |
| US5027362A (en) * | 1988-12-29 | 1991-06-25 | At&T Bell Laboratories | Laser control method and circuitry |
| US5025456A (en) * | 1989-02-02 | 1991-06-18 | At&T Bell Laboratories | Burst mode digital data receiver |
| US5191462A (en) * | 1990-05-11 | 1993-03-02 | At&T Bell Laboratories | Fiber optic transmission distortion compensation |
| CA2106439A1 (en) * | 1992-11-13 | 1994-05-14 | Yusuke Ota | Burst mode digital data receiver |
| US5539730A (en) * | 1994-01-11 | 1996-07-23 | Ericsson Ge Mobile Communications Inc. | TDMA/FDMA/CDMA hybrid radio access methods |
| GB2332284B (en) * | 1998-05-01 | 1999-11-03 | Bookham Technology Ltd | Branched optical waveguide,and its method of use |
| GB2339919B (en) * | 1998-07-17 | 2002-12-11 | Bookham Technology Ltd | Thermo-optic semiconductor device |
| US6181456B1 (en) | 1999-04-01 | 2001-01-30 | Uniphase Telecommunications Products, Inc. | Method and apparatus for stable control of electrooptic devices |
| US6393185B1 (en) * | 1999-11-03 | 2002-05-21 | Sparkolor Corporation | Differential waveguide pair |
| EP1178349A1 (en) * | 2000-08-02 | 2002-02-06 | Corning Incorporated | Integrated thermo-optical silica switch |
| US6654511B2 (en) * | 2001-05-17 | 2003-11-25 | Sioptical, Inc. | Optical modulator apparatus and associated method |
| US6646747B2 (en) * | 2001-05-17 | 2003-11-11 | Sioptical, Inc. | Interferometer apparatus and associated method |
| US20030087121A1 (en) * | 2001-06-18 | 2003-05-08 | Lawrence Domash | Index tunable thin film interference coatings |
| US7120338B2 (en) * | 2001-09-10 | 2006-10-10 | California Institute Of Technology | Tuning the index of a waveguide structure |
| JP3755588B2 (ja) * | 2001-10-03 | 2006-03-15 | 日本電気株式会社 | 光制御デバイス |
| GB0129248D0 (en) | 2001-12-06 | 2002-01-23 | Ecole Polytech | An optical modulator |
| US6753992B2 (en) * | 2002-06-14 | 2004-06-22 | Pacific Wave Industries, Inc. | Method for suppressing distortion in mach-zehnder optical modulators with a chirped or variable operating wavelength |
| US6912079B2 (en) * | 2003-02-14 | 2005-06-28 | Intel Corporation | Method and apparatus for phase shifting an optical beam in an optical device |
| US6845198B2 (en) * | 2003-03-25 | 2005-01-18 | Sioptical, Inc. | High-speed silicon-based electro-optic modulator |
| US6954558B2 (en) * | 2003-06-24 | 2005-10-11 | Intel Corporation | Method and apparatus for phase shifting an optical beam in an optical device |
| US7136544B1 (en) * | 2003-08-15 | 2006-11-14 | Luxtera, Inc. | PN diode optical modulators fabricated in strip loaded waveguides |
| KR100606100B1 (ko) * | 2004-01-15 | 2006-07-28 | 삼성전자주식회사 | 바이어스 제어장치를 구비한 광변조장치 및 이를 이용한바이어스 제어방법 |
| JP2005221999A (ja) * | 2004-02-09 | 2005-08-18 | Fuji Xerox Co Ltd | 光変調器及び光変調器アレイ |
| US7187837B2 (en) * | 2004-02-26 | 2007-03-06 | Sioptical, Inc. | Active manipulation of light in a silicon-on-insulator (SOI) structure |
| US7035487B2 (en) * | 2004-06-21 | 2006-04-25 | Intel Corporation | Phase shifting optical device with dopant barrier |
-
2007
- 2007-06-06 US US11/810,591 patent/US7447395B2/en not_active Expired - Fee Related
- 2007-06-11 EP EP07809457.0A patent/EP2027497B1/en active Active
- 2007-06-11 KR KR1020097000468A patent/KR101456307B1/ko not_active Expired - Fee Related
- 2007-06-11 JP JP2009515440A patent/JP5290164B2/ja not_active Expired - Fee Related
- 2007-06-11 WO PCT/US2007/013692 patent/WO2007146233A2/en not_active Ceased
- 2007-06-11 CN CN2007800222787A patent/CN101467083B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101467083B (zh) | 2012-10-10 |
| JP2009540385A (ja) | 2009-11-19 |
| EP2027497A4 (en) | 2011-03-09 |
| CN101467083A (zh) | 2009-06-24 |
| WO2007146233A2 (en) | 2007-12-21 |
| WO2007146233A3 (en) | 2008-08-07 |
| US7447395B2 (en) | 2008-11-04 |
| KR20090032071A (ko) | 2009-03-31 |
| KR101456307B1 (ko) | 2014-11-03 |
| US20070292075A1 (en) | 2007-12-20 |
| EP2027497A2 (en) | 2009-02-25 |
| EP2027497B1 (en) | 2016-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5290164B2 (ja) | シリコン変調器のオフセット調整配置 | |
| US20090110342A1 (en) | Silicon modulator offset tuning arrangement | |
| JP5770719B2 (ja) | 効率、及びチャープの制御が改善したシリコン型光変調素子 | |
| CN101578544B (zh) | 分段光调制器 | |
| US8620115B2 (en) | Optical modulators with controllable chirp | |
| CN105659450B (zh) | 耦合调制光学谐振器 | |
| Barrios et al. | Modeling and analysis of high-speed electro-optic modulation in high confinement silicon waveguides using metal-oxide-semiconductor configuration | |
| US20150277207A1 (en) | Output monitoring method for optical modulator and output monitoring device | |
| US20170082876A1 (en) | Detector remodulator | |
| US7280712B2 (en) | Method and apparatus for phase shifiting an optical beam in an optical device | |
| US7228023B1 (en) | Planar non-magnetic optical isolator | |
| JP2014066737A (ja) | 光変調デバイスの制御方法 | |
| CN116794860A (zh) | 具有增强的相位调谐的混合金属氧化物半导体电容器 | |
| Mishra et al. | Effect of junction profile on the phase and loss characteristics of a silicon optical modulator | |
| JP2018136396A (ja) | 光変調器 | |
| WO2023162181A1 (ja) | 光リング変調器 | |
| JPH063710A (ja) | 光制御デバイス及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100227 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100513 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100513 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110804 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110816 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111110 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120821 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121113 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130507 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130605 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5290164 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R370 | Written measure of declining of transfer procedure |
Free format text: JAPANESE INTERMEDIATE CODE: R370 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R370 | Written measure of declining of transfer procedure |
Free format text: JAPANESE INTERMEDIATE CODE: R370 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees | ||
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |