CN104969103A - 混杂mos光调制器 - Google Patents

混杂mos光调制器 Download PDF

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CN104969103A
CN104969103A CN201280072086.8A CN201280072086A CN104969103A CN 104969103 A CN104969103 A CN 104969103A CN 201280072086 A CN201280072086 A CN 201280072086A CN 104969103 A CN104969103 A CN 104969103A
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anode
semiconductor layer
photomodulator
negative electrode
optical waveguide
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梁迪
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Hewlett Packard Enterprise Development LP
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Abstract

混杂MOS光调制器。该光调制器包括光波导、包含第一材料并且在该光波导中形成的阴极、以及包含不同于第一材料的第二材料并且在该光波导中形成的阳极，该阳极邻接于阴极，在该阳极和该阴极之间限定电容器。

Description

混杂MOS光调制器
背景技术
在光发射机中，光调制器被用来调制具有模拟或数字信号的光学载波(光束)以用于通过光纤传输。一种典型的基于波分复用的光发射机利用各自以不同波长操作的若干激光来产生若干不同的光学载波。每一载波穿过其自身的光调制器，在其中用待传输的信号对其进行调制。然后，经调制的载波通过光复用器进入到用于传输的光纤中。作为一些有吸引力的硅基光调制器设计之一，硅MOS电容器邻接于硅光波导。穿过电容器施加的信号感应电容器中央附近的电荷累积。这种电荷累积改变了光波导的折射率及其传输损耗。折射率的改变导致通过波导传播的光束中的相移，从而对光进行相位调制。当在诸如马赫-曾德尔干涉仪(MZI)、环状谐振器或法布里-珀罗(FP)谐振器之类的光波导组件中利用相移时，光波导组件将光学相移转变为光功率变化，以实现光强度调制。当模拟或恒定光功率降低是为了替代将电信号编码为光信号时，光调制器可被用作光衰减器。
附图说明
附图不是按比例绘制的。其通过举例说明本文公开的内容。
图1是混杂MOS光调制器的实例的俯视图。
图2是图1的光调制器沿线2-2的截面图。
图3是包括法布里-珀罗谐振器的混杂MOS光调制器的实例的俯视图。
图4是马赫-曾德尔干涉仪中的混杂MOS光调制器的实例的俯视图。
图5是混杂MOS环状-谐振器光调制器的实例的透视图。
图6是图5中示出的调制器的俯视图。
图7示出了针对折射率变化Δneff(左侧轴)作图和吸收损失变化Δa(右侧轴)作图的载流子浓度(电子为e-，空穴为h+)之间的关系。
图8示出了在所施加功率的影响下混杂MOS光调制器中载流子浓度的实例。
图9A-图9H是制造混杂MOS光调制器的实例的截面图。
图10A-图10C是在混杂MOS光调制器上安装触点的实例的截面图。
图11是环状谐振器混杂MOS调制器的实例的截面图。
具体实施方式
在附图和本说明书中使用了示例性实例和细节描述，但也可以存在其他构造并且容易想到。诸如电压、温度、尺寸和分量值的参数为近似值。关于取向的术语，例如上、下、顶和底仅仅是为了便于说明组件相对于彼此之间的空间关系而使用，除非另外说明，相对于外部轴的取向并不是决定性的。为了清楚起见，没有详细描述一些已知方法和结构。权利要求中所限定的方法可以包括除权利要求中所列步骤之外的步骤，除了权利要求书本身中提到的顺序，该步骤可以不同于给定顺序的其他顺序进行。因此，只有权利要求书构成限定，附图和本说明书不构成限制。
光调制器利用多晶硅MOS电容器来调制光学载波。多晶硅中具有明显的材料损耗。如果掺杂多晶硅来降低其电阻，则会引入额外的自由载流子光损耗。多晶硅的载流子迁移率也低。需要更有效的光调制器。
图1和图2给出了在半导体基板100(在本例中为硅)上形成的混杂MOS光调制器的实例。光调制器包括光波导102、包含第一材料并且在该光波导102上形成的阴极104、以及包含不同于第一材料的第二材料并且在该光波导102中形成的阳极106。阳极邻接于阴极。在阳极和阴极之间限定电容器。
在一些实例中，基板100包含在底层108上生长的氧化物。在基板100上形成硅器件层110。沟槽112将器件层分成两部分114和116。第一部分114包含阳极106。光波导102在阳极106中形成。在本例中，阴极104包含III-V材料层，其被整合于第二部分116。阴极104可以通过沉积、晶片键合、整体式生长、或其他制造技术来形成。在阴极104和阳极106之间限定MOS电容器。
在阴极104和阳极106之间形成薄介电质118。该介电质118可以是阴极或阳极或二者的本征氧化物，或者外部介电质材料如高-k介电质或聚合物，其能够通过沉积、氧化、晶片键合或其他介电质涂覆方法来形成。
阴极104可以包含负掺杂的硅，阳极106可以包含正掺杂的硅。电极120位于阴极104上，电极122位于阳极106上。当在电极之间施加电压时，在介电质120周围会发生载流子累积、消耗或反转。由于电容器区域与光波导交叠，因此载流子浓度变化导致波导模折射率变化和传播损耗。能够实现光强度调制和衰减。
图3中示出了在其光波中包括导法布里-珀罗谐振器的光调制器的实例。除了光波导之外，图3中所示的光调制器的组件与图1和图2中所示的那些类似。这些组件具有相同的编号并且不再进一步讨论。阳极106和阴极104邻接于光波导300。以一定距离在光波导300中形成多个部分反射体302和304，在多个反射器之间限定光波导中的法布里-珀罗谐振器306。除了传统的平面内波导情况之外，相同的概念还可适用于垂直于晶片表面的光传播方向(即，波导取向)。
图4中示出了作为马赫-曾德尔干涉仪的一部分形成的光调制器的实例。除了光波导之外，图4中所示的光调制器的组件类似于图1和图2中所示的那些；这些组件具有相同的标号，并且将不对其进行进一步讨论。在图4所示的光调制器中，阳极106包含位于阴极相对侧上的第一和第二阳极106A和106B。在本例中，阴极在第一和第二区段104A和104B中形成，而在其他实例中，仅使用单个阴极。光波导400包含第一和第二臂402和404，并且如上文所述混杂MOS光调制器可以如图4中所示在臂404中形成，或者可根据需要在两个臂中形成。
图5和图6给出了环状谐振器光调制器的实例。类似于已经讨论过的实例，本实例在基板(未示出)上形成。硅器件层在氧化物上形成。环状沟槽500将硅器件层分为第一和第二部分。第一部分限定了环形阳极502。第二部分限定了位于阴极下方并且为圆柱形的硅层504。波导506在阳极502中形成。阴极508由不同于阳极的材料制成，其被整合于硅层504。横跨阴极和阳极之间的边界501限定MOS电容器。阳极部分为环形且部分环绕阴极。
如前述实施例中，在阴极和阳极之间的边界处形成氧化物512的薄层。该氧化物形成MOS电容器的介电层。电极514在阴极上，电极516在阳极上。
图7示出了针对折射率变化Δneff(左侧轴)作图和吸收损失变化Δa(右侧轴)作图的载流子浓度(电子为e-，空穴为h+)之间的关系。
图8给出了与AC信号源802串联连接的DC电源800的实例。该AC信号源802提供了调制信号，光波导102中的光束利用该调制信号被调制。DC信号源800具有连接于阴极电极120的负极端子和通过AC信号源802连接于阳极电极122的正极端子。这导致负电荷从阴极104向波导侧迁移，而正电荷(“空穴”)从阳极106通过本征硅的波导部分106向波导102的相对侧迁移。在其他实例中，源800和802可以并联，或者DC电源的极性可以反转，或者可以省略这些源之一。
MOS电容器在III-V材料和本征硅的下层电容器部分之间的边界处形成。在一些实例中，在该边界处天然形成非常薄的大约几纳米厚的硅层和III-V氧化物并且起到电容器的介电质的作用。在一些实例中，没有采取特别的步骤来促进该氧化物的形成。在其他实例中，可以刺激氧化物形成，例如通过升高温度、使材料暴露于富氧气氛、或其他适合的技术。
在一些实例中，III-V材料包含磷化铟。在其他实例中，III-V材料包含砷化镓或铟、镓、磷和砷的其他化合物。更通常地，阴极和阳极由不同的材料形成，其可以包含II-VI半导体化合物或其他材料。可以使用金属。
如前文中所讨论的，MOS电容器在波导内部形成，以使得在电容器介电质的任一侧累积/消耗的电荷载流子具有改变波导的折射率和波导损耗的作用。
MOS电容器能够以累积、消耗或反转的方式操作。如上文中所讨论的，在阳极和阴极之间能够施加信号调制器的AC电压和DC电压中的一个或二者，使得薄电荷层在介电质的两侧累积、消耗或反转。所获得的自由载流子密度变化导致阴极和阳极中的一个或二者的折射率n发生变化，并且显示为光模的有效折射率的变化(Δneff)。电容器末端的光学相移取决于该电压诱导的Δneff、器件长度L和光波长λ的量级，并且能够如下计算。硅和III-V的材料损耗也随着载流子密度变化而同时发生变化，并且能够被用作光衰减器。
图9A-9H是根据实例制造混杂MOS光衰减器的不同阶段的视图。图9A示出了可以是例如SiO2的基板902上的第一材料层900，在本例中为工艺硅。图9B示出了在工艺硅中蚀刻的一个或多个分离沟槽，在本例中为904和906。在图9C中，掩模908已位于工艺硅部分上方，并且在将会形成阳极的另一个部分上进行掺杂，如箭头910所指示的。图9D示出了已经通过掺杂在工艺硅中形成的阳极912，并且掩模908已被除去。图9E示出了在工艺硅上的氧化物薄层914；如上文中所讨论的，该氧化物层可以天然存在，而无需任何工艺步骤来形成，例如在接下来的步骤中，或者其可以通过用于生长薄氧化物层的任何适合的工艺来形成。图9F示出了不同于第一材料的第二材料的阴极916，其在本例中可以为III-V化合物，在第一材料的阳极902上并且在第一材料层和第二材料层之间具有介电质914。图9G示出了阳极和阴极上方的另一材料层918，以及光波导920的形成。图9H示出了除去材料以暴露阳极902的部分922和阴极916的部分924，以用于安装触点。
图10A-10C是在前文中所述类型的混杂MOS光调制器上制造触点的实例的视图。图10A示出了在阳极上沉积的阳极导体1000，例如穿过开口如图9H中的开口922，以及在阴极上沉积的阴极导体1002，例如穿过开口如图9H中的开口924。图10B示出了导体上方的绝缘材料1004，且图10C示出了穿过材料1004分别从阳极和阴极延伸的外部触点1006和1008。
可以利用具有相似步骤的相似工艺来制造在一条或两条光路中具有混杂MOS光调制器的马赫-曾德尔干涉仪。图12示出了这种器件的实例，包括第一阳极1200和第二阳极1202、分别位于第一和第二阳极上的第一和第二阳极导体1204和1206、以及第一和第二外部阳极触点1208和1210。第一和第二阴极1212和1214由不同于第一和第二阳极的材料形成。在一些实例中，只用一个阴极，通常在两个阳极之间居中。第一和第二外部触点1216和1218分别提供与第一和第二阴极的电连通。沟槽1220将阴极与阳极隔离。如在之前的实例中，在阴极1220和阳极1200之间限定电容器，并且在阴极1222和阳极1202之间限定电容器。
在一些实例中，阴极材料被晶片键合至阳极。这可以包括退火，例如在300℃或一些其它适合的温度下。在其他的实例中，没有进行退火。
所公开的MOS光调制器比多晶硅光调制器更加高效。相比于在多晶硅中，在III-V材料中载流子迁移率更高，并且电阻更低。相同掺杂水平下的材料损耗较低。该制造工艺简单且成本相对较低。该调制器还可用作光衰减器和移相器。其能够容易地与光源整合，例如混杂硅激光器。

Claims (15)

1.混杂MOS光调制器，其包括：
光波导；
阴极，包含第一材料并且在所述光波导中形成；以及
阳极，包含不同于所述第一材料的第二材料并且在所述光波导中形成，所述阳极邻接所述阴极，电容器在所述阳极和所述阴极之间限定。
2.如权利要求1所述的光调制器，在所述阳极和所述阴极之间进一步包含介电质。
3.如权利要求2所述的光调制器，其中所述介电质包含所述第一材料和所述第二材料中至少一种的本征氧化物。
4.如权利要求1所述的光调制器，其中所述第一材料包含半导体，所述第二材料包含半导体。
5.如权利要求1所述的光调制器，其中所述第一材料包含III-V化合物，所述第二材料包含硅。
6.如权利要求1所述的光调制器，其中所述电容器由邻接所述光波导的分离沟槽限定。
7.如权利要求1所述的光调制器，其中所述光调制器限定了微环形状。
8.如权利要求1所述的光调制器，其中：
所述电容器大体为圆形；并且
所述阴极和阳极的一个大体为圆形，而另一个为部分环形且部分环绕前述的一个。
9.如权利要求1所述的光调制器，所述光调制器进一步包括在所述光波导中形成的多个部分反射体，并且在多个部分反射体间限定了法布里-珀罗谐振器，所述法布里-珀罗谐振器至少部分包围所述电容器。
10.如权利要求1所述的光调制器，其中：
所述阳极包含位于所述阴极相对侧上的第一阳极和第二阳极，并且在所述第一阳极和所述阴极之间限定了第一沟道，在所述第二阳极和所述阴极之间限定了第二沟道；且
所述光波导包含位于邻接所述电容器的所述第一沟道中的第一支路和位于所述第二沟道中的第二支路，所述光调制器包含马赫-曾德尔结构。
11.如权利要求所述的光调制器，进一步包含至少一个另外的电极，所述另外的电极包含不同于所述阴极和所述阳极中至少一个的材料，第三电极在所述光波导中形成并且与所述阴极和所述阳极中的至少一个一起限定另外的电容器。
12.如权利要求1所述的光调制器，其中所述阴极和阳极通过晶片键合和整体式生长中的至少一种被整合。
13.一种制造光调制器的方法，包括：
在由基板携带的第一半导体层中形成分离沟槽；
在所述第一半导体层的一部分中注入离子；
在所述第一半导体层上形成第二半导体层，所述第二半导体不同于所述第一半导体，电容器被限定在所述第一半导体层和第二半导体层之间；
在所述第一半导体层和第二半导体层中形成光波导；
除去所述第二半导体层的一部分以暴露所述第一半导体层的一部分；
在所述第一半导体层的所述暴露部分上形成电极；以及
在所述第二半导体层上形成电极。
14.如权利要求13所述的方法，进一步包括在所述第一半导体层和第二半导体层之间形成介电质。
15.如权利要求13所述的方法，其中，形成所述介电质包括以下的至少一种：将所述第二半导体层晶片键合至所述第一半导体层、在所述第一半导体层上沉积介电质、诱导所述第一半导体层和第二半导体层中至少之一的氧化、以及旋转。
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