JP5290083B2 - 真空プラズマプロセッサ - Google Patents
真空プラズマプロセッサ Download PDFInfo
- Publication number
- JP5290083B2 JP5290083B2 JP2009184433A JP2009184433A JP5290083B2 JP 5290083 B2 JP5290083 B2 JP 5290083B2 JP 2009184433 A JP2009184433 A JP 2009184433A JP 2009184433 A JP2009184433 A JP 2009184433A JP 5290083 B2 JP5290083 B2 JP 5290083B2
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- JP
- Japan
- Prior art keywords
- workpiece
- chuck
- voltage
- glass
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
ガラスシートは、典型的には、1.1mmという名目厚さ、±0.1mmという厚さ公差、および非常に滑らかな表面を有し、最大ピーク間荒さは0.02ミクロンである。ガラスシートは、生産時、わずかに曲がっていたり、波状になっている場合がある。多様なプロセスステップ、特に付着を経過した後に、ガラスシートは大幅にさらに曲がったり、波状となり、チャンバ10内でのそのプラズマ処理中に基板シート32を平らにするさらに大きな必要性を生じさせる。
VESC=(V0+VG+VA+Vplasma)
であり、この場合Vplasmaは、プラズマがガラス絶縁基板32の上部露呈面に加える電圧である。
F=εoK2 AV2 A(t)A/2d2 A …… (1)
であり、この場合kAは絶縁物層59の誘電定数であり、εoは自由空間の誘電率であり、Aは絶縁物層59の上面の面積に実質的に等しいガラスワークピース32の底面の面積である。
VA(t)=CA +exp(−A+t)+CA -exp(−A-t)+VA∞ …(2)
であり、この場合、
A±=(fGrG+fArA±s)/2
CA±=[A±(VA∞−VAo)+fA(rAVAo+VGo−VESC+Vplasma)]/(±s)
fG=1/(CGRo)、fA=1/(CARo)、rG=(1+Ro/RG)、rA=(1+Ro/RA)
s=sqrt((fGrG−fArA)2+4fGfA)、 (sqrtは、平方根を示す。)
VA∞=V2(t→∞)、VAo=VA(t=0)、VGo=VG(t=0)
時間定数τ+=1/A+は、典型的には1秒未満であり、外部抵抗R0を通して直列組み合わせキャパシタンス(CG+CA)/(CG+CA)を充電することに対応する。時間定数τ+は、(VG+VA)によって定められる同等な回路の総電圧の変化を支配し、ワークピース32に対するチャック30の適切なオン時間である。時間定数τ+に伴い発生する変化は、キャパシタンスCAとCGの両方を通した変位電荷の等しい量の動きを含む。
Claims (4)
- 真空プラズマ処理チャンバを備えたワークピースを処理するための真空プラズマプロセッサであって、
前記真空プラズマ処理チャンバが、静電力によって前記ワークピースをチャックするための静電チャックと、前記静電チャック用のDCチャック電圧源とを備え、前記静電チャックおよびワークピースは、前記DCチャック電圧が一定である場合は前記静電力が時間の経過とともに増加する傾向を有し、
前記DCチャック電圧を制御するための制御装置を含み、前記制御装置が、前記ワークピースを処理する間の前記静電力が実質的に一定のままとなるように、前記ワークピースを処理する間に、ある一定範囲の値の全範囲に亘って前記DCチャック電圧を低下させるように構成され、
前記ワークピースが前記静電チャックから取外される時に前記静電チャック内を流れる電流をモニターするためのモニターを備え、前記制御装置は、続いて処理される少なくとも1つのワークピースのために前記静電チャックに印加される電圧を、前記モニターされた電流に応じて、その振幅が増加する場合は当該電圧の振幅および/または当該電圧が印加される時間の長さを増加させ、その振幅が減少する場合は当該電圧の振幅および/または当該電圧が印加される時間の長さを減少させる制御をするように構成されている真空プラズマプロセッサ。 - 続いて処理される少なくとも1つのワークピースのために前記静電チャックに印加される前記電圧を制御する前記モニターされた電流は、前記ワークピースが前記静電チャックから取外される時に前記静電チャック内を流れるピーク電流である、請求項1に記載の真空プラズマプロセッサ。
- 前記ある一定範囲の値は、連続的に低下するある指数関数に近似している、請求項1または2に記載の真空プラズマプロセッサ。
- 前記ある一定範囲の値は、ある指数関数に近似するように段階的に低下する複数のステップから成る、請求項1または2に記載の真空プラズマプロセッサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/163,368 | 1998-09-30 | ||
US09/163,368 US6790375B1 (en) | 1998-09-30 | 1998-09-30 | Dechucking method and apparatus for workpieces in vacuum processors |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000572987A Division JP4414099B2 (ja) | 1998-09-30 | 1999-09-10 | 真空プロセッサのワークピースのチャック解除方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010021559A JP2010021559A (ja) | 2010-01-28 |
JP5290083B2 true JP5290083B2 (ja) | 2013-09-18 |
Family
ID=22589739
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000572987A Expired - Fee Related JP4414099B2 (ja) | 1998-09-30 | 1999-09-10 | 真空プロセッサのワークピースのチャック解除方法および装置 |
JP2009184433A Expired - Fee Related JP5290083B2 (ja) | 1998-09-30 | 2009-08-07 | 真空プラズマプロセッサ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000572987A Expired - Fee Related JP4414099B2 (ja) | 1998-09-30 | 1999-09-10 | 真空プロセッサのワークピースのチャック解除方法および装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6790375B1 (ja) |
JP (2) | JP4414099B2 (ja) |
AU (1) | AU5817999A (ja) |
WO (1) | WO2000019592A1 (ja) |
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-
1998
- 1998-09-30 US US09/163,368 patent/US6790375B1/en not_active Expired - Fee Related
-
1999
- 1999-09-10 WO PCT/US1999/020637 patent/WO2000019592A1/en active Application Filing
- 1999-09-10 JP JP2000572987A patent/JP4414099B2/ja not_active Expired - Fee Related
- 1999-09-10 AU AU58179/99A patent/AU5817999A/en not_active Abandoned
-
2004
- 2004-08-30 US US10/928,152 patent/US7196896B2/en not_active Expired - Lifetime
-
2009
- 2009-08-07 JP JP2009184433A patent/JP5290083B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6790375B1 (en) | 2004-09-14 |
JP4414099B2 (ja) | 2010-02-10 |
WO2000019592A1 (en) | 2000-04-06 |
US20050036268A1 (en) | 2005-02-17 |
JP2010021559A (ja) | 2010-01-28 |
AU5817999A (en) | 2000-04-17 |
JP2002526935A (ja) | 2002-08-20 |
US7196896B2 (en) | 2007-03-27 |
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