JP5285866B2 - 研磨液 - Google Patents

研磨液 Download PDF

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Publication number
JP5285866B2
JP5285866B2 JP2007079993A JP2007079993A JP5285866B2 JP 5285866 B2 JP5285866 B2 JP 5285866B2 JP 2007079993 A JP2007079993 A JP 2007079993A JP 2007079993 A JP2007079993 A JP 2007079993A JP 5285866 B2 JP5285866 B2 JP 5285866B2
Authority
JP
Japan
Prior art keywords
group
polishing
polishing liquid
general formula
liquid according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007079993A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008243997A (ja
Inventor
上村  哲也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2007079993A priority Critical patent/JP5285866B2/ja
Priority to TW097109775A priority patent/TWI402336B/zh
Priority to KR1020080026772A priority patent/KR101476656B1/ko
Priority to CN2008100867783A priority patent/CN101275065B/zh
Publication of JP2008243997A publication Critical patent/JP2008243997A/ja
Application granted granted Critical
Publication of JP5285866B2 publication Critical patent/JP5285866B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2007079993A 2007-03-26 2007-03-26 研磨液 Active JP5285866B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007079993A JP5285866B2 (ja) 2007-03-26 2007-03-26 研磨液
TW097109775A TWI402336B (zh) 2007-03-26 2008-03-20 研磨液
KR1020080026772A KR101476656B1 (ko) 2007-03-26 2008-03-24 연마액
CN2008100867783A CN101275065B (zh) 2007-03-26 2008-03-26 研磨液

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007079993A JP5285866B2 (ja) 2007-03-26 2007-03-26 研磨液

Publications (2)

Publication Number Publication Date
JP2008243997A JP2008243997A (ja) 2008-10-09
JP5285866B2 true JP5285866B2 (ja) 2013-09-11

Family

ID=39915002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007079993A Active JP5285866B2 (ja) 2007-03-26 2007-03-26 研磨液

Country Status (4)

Country Link
JP (1) JP5285866B2 (zh)
KR (1) KR101476656B1 (zh)
CN (1) CN101275065B (zh)
TW (1) TWI402336B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5383164B2 (ja) * 2008-11-28 2014-01-08 富士フイルム株式会社 研磨液
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
WO2019131885A1 (ja) * 2017-12-27 2019-07-04 ニッタ・ハース株式会社 研磨用スラリー
CN108623483A (zh) * 2018-06-27 2018-10-09 陕西科技大学 一种含联苯基的抗泥剂及其制备方法及应用
CN109232268B (zh) * 2018-10-30 2021-04-13 中国石油集团渤海钻探工程有限公司 渗吸排驱剂及其制备方法
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1035884C (zh) * 1994-12-13 1997-09-17 浙江大学精细化工厂 汽车制动泵用的防护液
JP4069396B2 (ja) * 1997-01-14 2008-04-02 荒川化学工業株式会社 洗浄剤組成物
JPH11246679A (ja) * 1998-02-27 1999-09-14 Aiwa Raito:Kk 研磨材料
JP2000049388A (ja) * 1998-07-27 2000-02-18 Matsushita Electron Corp 半導体装置およびその製造方法
JP4816836B2 (ja) * 1998-12-28 2011-11-16 日立化成工業株式会社 金属用研磨液及びそれを用いた研磨方法
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Necエレクトロニクス株式会社 化学的機械的研磨用スラリー
TW200300168A (en) * 2001-10-31 2003-05-16 Hitachi Chemical Co Ltd Polishing fluid and polishing method
US20030168627A1 (en) * 2002-02-22 2003-09-11 Singh Rajiv K. Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
JP2005340755A (ja) * 2003-11-14 2005-12-08 Showa Denko Kk 研磨組成物および研磨方法
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
JP2006179845A (ja) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
JP2006165142A (ja) * 2004-12-06 2006-06-22 Jsr Corp 化学機械研磨用水系分散体及び化学機械研磨方法
CN1279137C (zh) * 2005-01-07 2006-10-11 清华大学 一种用于存储器硬盘磁头背面研磨的研磨液

Also Published As

Publication number Publication date
KR101476656B1 (ko) 2014-12-26
CN101275065B (zh) 2013-07-31
TW200902694A (en) 2009-01-16
JP2008243997A (ja) 2008-10-09
KR20080087689A (ko) 2008-10-01
CN101275065A (zh) 2008-10-01
TWI402336B (zh) 2013-07-21

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