JP5283704B2 - 静電チャック - Google Patents
静電チャック Download PDFInfo
- Publication number
- JP5283704B2 JP5283704B2 JP2010529749A JP2010529749A JP5283704B2 JP 5283704 B2 JP5283704 B2 JP 5283704B2 JP 2010529749 A JP2010529749 A JP 2010529749A JP 2010529749 A JP2010529749 A JP 2010529749A JP 5283704 B2 JP5283704 B2 JP 5283704B2
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- Prior art keywords
- substrate
- electrostatic chuck
- solar cell
- adsorption
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 98
- 238000001179 sorption measurement Methods 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 241001272720 Medialuna californiensis Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- -1 printed wiring Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Description
なお、本発明の静電チャックは、上記に例示したように、基板の処理に直接使用する光エネルギー、又は基板の処理に使われる他のエネルギーから間接的に光エネルギーを発生する基板処理装置で使用するのがよいが、例えば照明として利用される蛍光灯からの光エネルギーを発生するような基板処理装置で使用してもよい。ただし、太陽電池から得られる電力の観点から、好ましくは前者のような基板処理装置で使用するのがよい。
2 :下部絶縁層
3 :吸着電極
4 :上部絶縁層
5 :電極シート
5a :基板吸着面
6 :太陽電池
7 :昇圧部(昇圧型スイッチング回路)
8 :静電チャック
11 :プラズマエッチング装置
12 :上部電極
13 :高周波電源
w :基板
Claims (6)
- 光エネルギーを発生して基板を処理する基板処理装置において基板を吸着保持する静電チャックであり、
吸着電極を備えた電極シートと、上面側に電極シートを積層させる金属基盤と、吸着電極に供給する電力を得る内部電源と、内部電源で得られた電力の電圧を昇圧する昇圧回路とを有し、
内部電源が太陽電池であって、前記光エネルギーを受光して、基板の処理中に光エネルギーを電力に変換し、電極シートに基板を吸着保持させることを特徴とする、電力自己補給型の静電チャック。 - 光エネルギーは、基板の処理の際のイオン注入、プラズマ照射、露光、スパッタ、洗浄、アニール、酸化、又は拡散によって得られる請求項1に記載の静電チャック。
- 蓄電手段を更に備える請求項1又は2に記載の静電チャック。
- 蓄電手段が、大容量コンデンサ又は充電可能なバッテリである請求項3に記載の静電チャック。
- 太陽電池が、受光面側に石英ガラスからなる保護層を有する請求項1〜4のいずれかに記載の静電チャック。
- 太陽電池が、金属基盤の上面側、又は、基板を吸着保持する電極シートの基板吸着面側に配設される請求項1〜5のいずれかに記載の静電チャック。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010529749A JP5283704B2 (ja) | 2008-09-17 | 2009-09-14 | 静電チャック |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008237995 | 2008-09-17 | ||
JP2008237995 | 2008-09-17 | ||
JP2010529749A JP5283704B2 (ja) | 2008-09-17 | 2009-09-14 | 静電チャック |
PCT/JP2009/065992 WO2010032703A1 (ja) | 2008-09-17 | 2009-09-14 | 静電チャック |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010032703A1 JPWO2010032703A1 (ja) | 2012-02-09 |
JP5283704B2 true JP5283704B2 (ja) | 2013-09-04 |
Family
ID=42039527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010529749A Active JP5283704B2 (ja) | 2008-09-17 | 2009-09-14 | 静電チャック |
Country Status (8)
Country | Link |
---|---|
US (1) | US8411408B2 (ja) |
EP (1) | EP2330619B1 (ja) |
JP (1) | JP5283704B2 (ja) |
KR (1) | KR101542485B1 (ja) |
CN (1) | CN102160165B (ja) |
HK (1) | HK1156150A1 (ja) |
TW (1) | TWI466227B (ja) |
WO (1) | WO2010032703A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012165250A1 (ja) * | 2011-05-30 | 2012-12-06 | 株式会社クリエイティブ テクノロジー | 静電吸着体及びこれを用いた静電吸着装置 |
JP6425184B2 (ja) * | 2012-11-22 | 2018-11-21 | 株式会社クリエイティブテクノロジー | 給電システム |
JP2015095580A (ja) * | 2013-11-13 | 2015-05-18 | 東京エレクトロン株式会社 | 基板処理装置及び基板離脱方法 |
TWI560803B (en) * | 2014-06-13 | 2016-12-01 | Mobile electrostatic chuck and manufacturing method of the same | |
JP6435481B1 (ja) * | 2017-09-04 | 2018-12-12 | 株式会社プロセス・ラボ・ミクロン | ワーク吸着冶具とワーク吸着装置 |
CN111918605A (zh) * | 2018-03-29 | 2020-11-10 | 创意科技股份有限公司 | 吸着垫 |
TWI819046B (zh) * | 2018-08-02 | 2023-10-21 | 日商創意科技股份有限公司 | 靜電吸附體 |
SG11202101566SA (en) * | 2018-08-30 | 2021-03-30 | Creative Tech Corp | Cleaning device |
JP2022040699A (ja) * | 2020-08-31 | 2022-03-11 | トヨタ自動車株式会社 | 金属製部材の表面処理方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0316297U (ja) * | 1989-06-27 | 1991-02-19 | ||
JP2007012942A (ja) * | 2005-06-30 | 2007-01-18 | Canon Inc | 容器及びそれを使って基板を搬送する方法 |
JP2007053348A (ja) * | 2005-07-18 | 2007-03-01 | Udo Retzlaff | ウェハー補強裏打ち用可搬静電チャック(esc) |
JP2007157886A (ja) * | 2005-12-02 | 2007-06-21 | Seiko Epson Corp | 表面処理用冶具 |
JP2008131002A (ja) * | 2006-11-24 | 2008-06-05 | Shin Etsu Chem Co Ltd | 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6665168B2 (en) * | 2001-03-30 | 2003-12-16 | Taiwan Semiconductor Manufacturing Co. Ltd | Electrostatic chuck apparatus and method for efficiently dechucking a substrate therefrom |
JP2005353987A (ja) * | 2004-06-14 | 2005-12-22 | Canon Inc | 静電チャック、デバイス製造装置およびデバイス製造方法 |
-
2009
- 2009-09-14 WO PCT/JP2009/065992 patent/WO2010032703A1/ja active Application Filing
- 2009-09-14 EP EP09814548.5A patent/EP2330619B1/en active Active
- 2009-09-14 KR KR1020117008359A patent/KR101542485B1/ko active IP Right Grant
- 2009-09-14 JP JP2010529749A patent/JP5283704B2/ja active Active
- 2009-09-14 CN CN200980136283.XA patent/CN102160165B/zh active Active
- 2009-09-14 US US13/062,427 patent/US8411408B2/en active Active
- 2009-09-15 TW TW098131111A patent/TWI466227B/zh active
-
2011
- 2011-10-06 HK HK11110620.4A patent/HK1156150A1/xx not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0316297U (ja) * | 1989-06-27 | 1991-02-19 | ||
JP2007012942A (ja) * | 2005-06-30 | 2007-01-18 | Canon Inc | 容器及びそれを使って基板を搬送する方法 |
JP2007053348A (ja) * | 2005-07-18 | 2007-03-01 | Udo Retzlaff | ウェハー補強裏打ち用可搬静電チャック(esc) |
JP2007157886A (ja) * | 2005-12-02 | 2007-06-21 | Seiko Epson Corp | 表面処理用冶具 |
JP2008131002A (ja) * | 2006-11-24 | 2008-06-05 | Shin Etsu Chem Co Ltd | 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池 |
Also Published As
Publication number | Publication date |
---|---|
WO2010032703A1 (ja) | 2010-03-25 |
TWI466227B (zh) | 2014-12-21 |
EP2330619B1 (en) | 2019-06-12 |
KR101542485B1 (ko) | 2015-08-06 |
KR20110073514A (ko) | 2011-06-29 |
CN102160165A (zh) | 2011-08-17 |
EP2330619A4 (en) | 2012-07-11 |
US8411408B2 (en) | 2013-04-02 |
HK1156150A1 (en) | 2012-06-01 |
JPWO2010032703A1 (ja) | 2012-02-09 |
US20110157761A1 (en) | 2011-06-30 |
CN102160165B (zh) | 2012-12-12 |
EP2330619A1 (en) | 2011-06-08 |
TW201027664A (en) | 2010-07-16 |
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