JP5270996B2 - シリコン単結晶引上装置 - Google Patents

シリコン単結晶引上装置 Download PDF

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Publication number
JP5270996B2
JP5270996B2 JP2008195999A JP2008195999A JP5270996B2 JP 5270996 B2 JP5270996 B2 JP 5270996B2 JP 2008195999 A JP2008195999 A JP 2008195999A JP 2008195999 A JP2008195999 A JP 2008195999A JP 5270996 B2 JP5270996 B2 JP 5270996B2
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Japan
Prior art keywords
tube
single crystal
silicon single
guide rail
sample
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JP2008195999A
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English (en)
Japanese (ja)
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JP2010030853A (ja
JP2010030853A5 (enExample
Inventor
康人 鳴嶋
真一 川添
福生 小川
利通 久保田
朋広 福田
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Sumco Techxiv Corp
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Sumco Techxiv Corp
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Publication date
Application filed by Sumco Techxiv Corp filed Critical Sumco Techxiv Corp
Priority to JP2008195999A priority Critical patent/JP5270996B2/ja
Priority to EP09802962A priority patent/EP2330234B1/en
Priority to PCT/JP2009/063440 priority patent/WO2010013719A1/ja
Priority to US13/056,017 priority patent/US8920561B2/en
Publication of JP2010030853A publication Critical patent/JP2010030853A/ja
Publication of JP2010030853A5 publication Critical patent/JP2010030853A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2008195999A 2008-07-30 2008-07-30 シリコン単結晶引上装置 Active JP5270996B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008195999A JP5270996B2 (ja) 2008-07-30 2008-07-30 シリコン単結晶引上装置
EP09802962A EP2330234B1 (en) 2008-07-30 2009-07-28 Silicon single crystal pull-up apparatus
PCT/JP2009/063440 WO2010013719A1 (ja) 2008-07-30 2009-07-28 シリコン単結晶引上装置
US13/056,017 US8920561B2 (en) 2008-07-30 2009-07-28 Silicon single crystal pull-up apparatus that pulls a doped silicon single crystal from a melt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008195999A JP5270996B2 (ja) 2008-07-30 2008-07-30 シリコン単結晶引上装置

Publications (3)

Publication Number Publication Date
JP2010030853A JP2010030853A (ja) 2010-02-12
JP2010030853A5 JP2010030853A5 (enExample) 2011-09-15
JP5270996B2 true JP5270996B2 (ja) 2013-08-21

Family

ID=41610419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008195999A Active JP5270996B2 (ja) 2008-07-30 2008-07-30 シリコン単結晶引上装置

Country Status (4)

Country Link
US (1) US8920561B2 (enExample)
EP (1) EP2330234B1 (enExample)
JP (1) JP5270996B2 (enExample)
WO (1) WO2010013719A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5329143B2 (ja) * 2008-07-30 2013-10-30 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
US10202704B2 (en) 2011-04-20 2019-02-12 Gtat Ip Holding Llc Side feed system for Czochralski growth of silicon ingots
JP6097276B2 (ja) * 2011-04-20 2017-03-15 ジーティーエイティー アイピー ホールディング エルエルシーＧｔａｔ Ｉｐ Ｈｏｌｄｉｎｇ Ｌｌｃ シリコンインゴットのチョクラルスキー成長用の側方供給装置
KR101390798B1 (ko) 2012-01-06 2014-05-02 주식회사 엘지실트론 융액에 도펀트를 투입하기 위한 장치
US10233562B2 (en) 2013-04-24 2019-03-19 Sumco Techxiv Corporation Method for producing single crystal, and method for producing silicon wafer
JP6631460B2 (ja) 2016-10-03 2020-01-15 株式会社Sumco シリコン単結晶の製造方法およびシリコン単結晶
JP6702141B2 (ja) * 2016-11-01 2020-05-27 信越半導体株式会社 単結晶引上げ装置
US11585010B2 (en) * 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606920B2 (ja) * 1982-11-12 1985-02-21 工業技術院長 ガリウム砒素単結晶製造装置
JPS59190292A (ja) 1983-04-08 1984-10-29 Shin Etsu Handotai Co Ltd 半導体シリコン単結晶の抵抗率制御方法
JPS61227986A (ja) * 1985-03-30 1986-10-11 Shin Etsu Handotai Co Ltd 単結晶シリコン棒の製造方法
DE4106589C2 (de) 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
JPH09227275A (ja) * 1996-02-28 1997-09-02 Sumitomo Sitix Corp ドープ剤添加装置
WO2001086033A1 (en) 2000-05-10 2001-11-15 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing process
US6312517B1 (en) 2000-05-11 2001-11-06 Memc Electronic Materials, Inc. Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
JP2005247671A (ja) 2004-03-08 2005-09-15 Toshiba Ceramics Co Ltd 単結晶引上装置
JP4356517B2 (ja) * 2004-05-28 2009-11-04 株式会社Ｓｕｍｃｏ シリコン単結晶引上装置およびシリコン単結晶の製造方法
JP5329143B2 (ja) * 2008-07-30 2013-10-30 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置

Also Published As

Publication number Publication date
JP2010030853A (ja) 2010-02-12
EP2330234A1 (en) 2011-06-08
US8920561B2 (en) 2014-12-30
US20110120367A1 (en) 2011-05-26
EP2330234B1 (en) 2013-01-30
WO2010013719A1 (ja) 2010-02-04
EP2330234A4 (en) 2011-10-26

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