JP5267412B2 - 冷媒冷却型両面冷却半導体装置 - Google Patents
冷媒冷却型両面冷却半導体装置 Download PDFInfo
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- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
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- H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
(実施例1)
図1はこの冷媒冷却型両面冷却半導体装置の要部分解厚さ方向断面図を示す。
(半導体モジュ−ルの構成)
1は、両面冷却型半導体モジュール、2は冷媒チュ−ブ、3は金属製又は良熱伝導性のスペ−サである。
(冷媒冷却型両面冷却半導体装置の構成)
上述した両面放熱型半導体モジュ−ルを用いた冷媒冷却型両面冷却半導体装置の例を図2、図3を参照して以下に説明する。図2は、この半導体装置の蓋を外した平面図を示し、図3はその縦断面図を示す。
(実施例2)
図1に示すモジュール1を用いた他の実施例の冷媒冷却型両面冷却半導体装置を図4、図5に示す。
(装置構成)
図4は、この半導体装置の蓋を外した平面図を示し、図5はその縦断面図を示す。
(変形態様)
上記実施例の半導体モジュ−ル1は半導体チップに置換しても同様の作用効果を奏することができる。
(実施例3)
図1に示すモジュール1を用いた他の実施例の冷媒冷却型両面冷却半導体装置を図6、図7に示す。
(装置構成)
図6は、この半導体装置の蓋を外した平面図を示し、図7はその縦断面図を示す。
2:冷媒チューブ
6:押さえ板(挟圧部材)
7:スルーボルト(挟圧部材)
9:板ばね部材(挟圧部材)
10:ナット(挟圧部材)
Claims (11)
- 半導体チップ又は両面冷却型半導体モジュールと、
扁平な接触受熱面を有して冷却流体が内部を流れる冷媒チュ−ブと、
直線状に延在する前記冷媒チューブの一端に連通する入り口ヘッダと、前記冷媒チューブの他端に連通する出口ヘッダと、
前記半導体チップ又は両面冷却型半導体モジュールの両主面に前記冷媒チュ−ブの平坦面を絶縁スペ−サを介して又は直接に密接させた状態で前記半導体チップ又は両面冷却型半導体モジュールを前記冷媒チュ−ブにて半導体チップ又は両面冷却型半導体モジュールの厚さ方向に挟圧させる挟圧部材と、を備え、
前記冷媒チューブは、前記一端から前記他端に向かって前記冷却流体が直線状に流れるものであって、流路方向および挟圧方向に延びる複数の隔壁を有することを特徴とする冷媒冷却型両面冷却半導体装置。 - 請求項1記載の冷媒冷却型両面冷却半導体装置において、
前記半導体チップ又は両面放熱型半導体モジュ−ルにそれぞれ接する各前記冷媒チュ−ブの両端は、共通の入り口ヘッダ及び出口ヘッダにそれぞれ接続されることを特徴とする冷媒冷却型両面冷却半導体装置。 - 請求項1又は2記載の冷媒冷却型両面冷却半導体装置において、
前記冷媒チュ−ブは良熱伝導性の軟質材を介して前記半導体チップ又は半導体モジュールに接することを特徴とする冷媒冷却型両面冷却半導体装置。 - 請求項1乃至3のいずれか記載の冷媒冷却型両面冷却半導体装置において、
前記挟圧部材は、板ばね部材を含むことを特徴とする冷媒冷却型両面冷却半導体装置。 - 請求項1乃至3のいずれか記載の冷媒冷却型両面冷却半導体装置において、
前記挟圧部材は、最も外側の一対の前記冷媒チュ−ブに個別に接する一対の押さえ板と、前記両押さえ板を貫通するスル−ボルトと、前記スル−ボルトに螺着されるナットとを有することを特徴とする冷媒冷却型両面冷却半導体装置。 - 請求項4記載の冷媒冷却型両面冷却半導体装置において、
前記挟圧部材は、最も外側の一対の前記冷媒チュ−ブに個別に接する一対の押さえ板を有し、前記板ばね部材は、コ字状に形成されて両端部が前記両押さえ板を弾性付勢することを特徴とする冷媒冷却型両面冷却半導体装置。 - 請求項1乃至6のいずれか記載の冷媒冷却型両面冷却半導体装置において、
多数の前記半導体チップ又は両面冷却型半導体モジュールと多数の前記冷媒チュ−ブとのセットを前記挟圧方向に複数配置して前記挟圧部材で挟圧する構造を有することを特徴とする冷媒冷却型両面冷却半導体装置。 - 請求項1乃至7のいずれか記載の冷媒冷却型両面冷却半導体装置において、
複数の前記半導体チップ又は両面放熱型半導体モジュ−ルは、三相インバータ回路を構成することを特徴とする冷媒冷却型両面冷却半導体装置。 - 請求項1乃至8のいずれか記載の冷媒冷却型両面冷却半導体装置において、
前記冷媒チュ−ブの反半導体チップ側の平坦面に他の発熱部品の平坦面を密接させ、前記挟圧部材で、前記半導体チップ又は両面冷却型半導体モジュールと前記冷媒チュ−ブと前記発熱部品とを挟圧する構造を有することを特徴とする冷媒冷却型両面冷却半導体装置。 - 請求項9記載の冷媒冷却型両面冷却半導体装置において、
前記半導体チップ又は、両面冷却型半導体モジュールは三相インバ−タ回路の一部又は全部をなし、前記発熱部品は、前記三相インバ−タ回路の正負直流電源端間に接続される平滑コンデンサからなることを特徴とする冷媒冷却型両面冷却半導体装置。 - 請求項2記載の冷媒冷却型両面冷却半導体装置において、
密閉ケースに収容され、前記入り口ヘッダ及び出口ヘッダの各一端は、前記ケ−スから外部に突出していることを特徴とする冷媒冷却型両面冷却半導体装置。
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Families Citing this family (8)
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JP5651972B2 (ja) * | 2010-03-17 | 2015-01-14 | 富士電機株式会社 | 水冷式半導体冷却ユニットのスタック構造 |
JP2013059155A (ja) * | 2011-09-07 | 2013-03-28 | Denso Corp | 電力変換装置 |
WO2014097561A1 (ja) * | 2012-12-21 | 2014-06-26 | 株式会社デンソー | 放熱シート、放熱装置、放熱装置の製造方法 |
RU2640038C2 (ru) * | 2013-07-08 | 2017-12-26 | Сименс Акциенгезелльшафт | Многоуровневый преобразователь |
JP6555159B2 (ja) * | 2016-03-08 | 2019-08-07 | 株式会社デンソー | 冷却チューブ |
JP6631431B2 (ja) | 2016-07-21 | 2020-01-15 | 株式会社デンソー | 電力変換装置 |
JP6636996B2 (ja) | 2017-07-11 | 2020-01-29 | ファナック株式会社 | Ldモジュール冷却装置及びレーザ装置 |
JP6801605B2 (ja) | 2017-08-11 | 2020-12-16 | 株式会社デンソー | 電力変換装置 |
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DE4002060A1 (de) * | 1990-01-25 | 1991-08-01 | Bosch Gmbh Robert | Halterung fuer zu kuehlende elektronische bauelemente |
JPH08330484A (ja) * | 1995-06-01 | 1996-12-13 | Fuji Electric Co Ltd | 半導体素子の固定構造体 |
JPH09260585A (ja) * | 1996-03-25 | 1997-10-03 | Fuji Electric Co Ltd | 平型半導体素子 |
JPH09307039A (ja) * | 1996-05-13 | 1997-11-28 | Mitsubishi Electric Corp | 半導体スタック冷却装置 |
JPH1075564A (ja) * | 1996-08-29 | 1998-03-17 | Hitachi Ltd | 半導体電力変換装置 |
JPH10107194A (ja) * | 1996-09-30 | 1998-04-24 | Fuji Electric Co Ltd | 水冷式半導体素子スタックの冷却体およびその製造方法 |
JPH1167996A (ja) * | 1997-08-20 | 1999-03-09 | Fuji Electric Co Ltd | 沸騰冷却装置を備えた半導体スタック |
JP4423746B2 (ja) * | 2000-05-10 | 2010-03-03 | 株式会社デンソー | 冷媒冷却型両面冷却半導体装置 |
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