JP5261397B2 - Electrode for organic light emitting device, acid etching thereof, and organic light emitting device incorporating the same - Google Patents

Description

  The subject of the present invention relates to a multilayer electrode for an organic light-emitting device, its acid etching and an organic light-emitting device incorporating it.

  Known organic light emitting systems or OLEDs comprise an organic light emitting material or a multi-layer coating of organic light emitting material, which is generally supplied with electricity in the form of two conductive layers located on its sides.

  These conductive layers usually include layers based on indium oxide, and in general tin-doped indium oxide is better known by the abbreviation ITO. ITO layers have been studied particularly closely. They use oxide targets (non-reactive sputtering) or targets based on indium and tin (reactive sputtering in the presence of oxygen-type oxidants), magnetron sputtering. With a thickness of about 100 to 150 nm. However, this ITO layer has a number of drawbacks. First, materials to improve conductivity and high temperature (350 ° C.) deposition processes generate additional costs. The sheet resistance remains relatively high (on the order of 10 Ω / □) unless the layer thickness increases beyond 150 nm, leading to reduced permeability and increased surface roughness.

  Accordingly, new electrode structures have been developed. For example, Japanese Patent Laid-Open No. 2005-038642 discloses a TFT (thin film transistor) driven light emitting flat screen having a planar light emitting organic light emitting system that respectively generates red light, green light, and blue light to form an active matrix. Teaching.

Each organic light emitting element
An adhesion layer formed from, for example, ITO;
A (semi) reflective metal layer, in particular having a thickness of at least 50 nm, based on silver or aluminum or formed from silver-containing aluminum;
-What is referred to as a back or bottom electrode, including a work function adjusting coating layer made of, for example, ITO, is provided.

  It is an object of the present invention to sacrifice (especially stability and / or mechanical) without sacrificing its conductive properties or its optical quality and the performance of the device incorporating it, and without causing manufacturing difficulties. It is possible to obtain an assembly consisting of a conductive layer in order to form a robust and reliable electrode (with respect to mechanical and thermal resistance).

  The object of the present invention is, in particular, a reliable and robust light emitting system without sacrificing its conductive properties, its optical quality and the optical performance of the OLED and without causing manufacturing difficulties. It is possible to obtain an assembly of conductive layers to form the bottom electrode.

  The term “bottom electrode” should be understood within the context of the present invention to refer to the electrode closest to the substrate inserted between the support substrate and the OLED system.

  Furthermore, this object is to be realized at low cost without changing the known configuration of the organic light emitting system according to the invention.

  This is a substantially transmissive, translucent (both transmissive and reflective) or reflective electrode, well suited for OLEDs forming active matrix and passive matrix OLED screens, or (architecture) And / or decoration) including the development of electrodes commonly used for lighting or indicating applications, as well as other electronic applications.

For this purpose, one subject of the present invention is a substrate for an organic light-emitting device supporting a multilayer electrode called a bottom electrode on a first main surface, the electrode being continuously,
A layer referred to as an adhesion layer formed from a metal oxide and / or metal nitride type dielectric material;
-A metal functional layer having inherent conductivity properties;
A metal layer directly above the metal functional layer and having a thickness of 5 nm or less, preferably 0.5 nm to 2 nm, and / or a substoichiometric metal oxide, a substoichiometric metal oxynitride, or A thin blocking layer comprising a layer having a thickness of 10 nm or less, preferably 0.5 nm to 2 nm based on a substoichiometric metal nitride,
A substrate comprising a film including a coating layer formed of a dielectric material mainly composed of a metal oxide forming a work function adjusting layer.

A thin blocking layer
If the layer on the functional layer is deposited using reactive (oxygen, nitrogen, etc.) plasma, for example when the oxide layer on the functional layer is deposited by sputtering,
-If the composition of the layer on the functional layer is likely to fluctuate during industrial manufacturing (e.g. deposition conditions and target wear type variation), the stoichiometric oxide and / or nitride type layer will vary. Therefore, when changing the quality of the functional layer and the characteristics of the electrode (surface resistance, light transmittance, etc.) along with this,
If the electrode is heat treated after deposition,
In one or more of these configurations, a protective layer or even a “sacrificial” layer is formed that prevents damage to the functional metal, particularly pure and / or as a thin layer.

  This protective layer or sacrificial layer significantly improves the reproducibility of the electrical and optical properties of the electrode. This is very important for industrial approaches where only small dispersions in electrode properties are acceptable.

  The selected thin metal blocking layer is preferably at least one of Ti, V, Mn, Fe, Co, Cu, Zn, Zr, Hf, Al, Nb, Ni, Cr, Mo, Ta, and W. It can consist of a material selected from one metal or an alloy based on at least one of these materials.

  Alloys based on or selected from niobium Nb, tantalum Ta, titanium Ti, chromium Cr and nickel Ni, or in particular formed from at least two of these metals, in particular niobium / tantalum ( A thin blocking layer mainly composed of an Nb / Ta alloy, a niobium / chromium (Nb / Cr) alloy, a tantalum / chromium (Ta / Cr) alloy, or a nickel / chromium (Ni / Cr) alloy is particularly preferable. This type of layer based on at least one metal has a particularly strong gettering effect.

  A thin metal blocking layer can be easily manufactured without damaging the functional layer. This metal layer can preferably be deposited in an inert atmosphere consisting of a noble gas (He, Ne, Xe, Ar, Kr) (ie without intentional introduction of oxygen or nitrogen). The problem with this metal layer, whose surface will be oxidized during the subsequent deposition of the metal oxide-based layer, is neither excluded nor problematic.

  Such a thin metal blocking layer also provides excellent mechanical properties, particularly wear and scratch resistance. This is especially true for multi-layer coatings that are heat treated to undergo extensive diffusion of oxygen or nitrogen.

  However, with respect to the use of a metal blocking layer, it is necessary to limit the thickness of the metal layer and thus the light absorption in order to maintain sufficient light transmission.

The thin blocking layer can be partially oxidized. This layer is deposited in a non-metallic form and is therefore deposited in a semi-stoichiometric form rather than a stoichiometric form of the MO _x type. Where M is the material and x is the stoichiometry of the MNO _x type for the oxide of the material or for the oxide of the two materials M, N (or more). Is a smaller number. Examples thereof include TiO _x and NiCrO _x .

  Preferably, x is 0.75 to 0.99 times the number for the normal stoichiometry of the oxide. For monoxide, x can be chosen to be in particular from 0.5 to 0.98, and for dioxide, x can be from 1.5 to 1.98.

In one particular variant, the thin blocking layer is such that x is in particular 1.5 ≦ x ≦ 1.98, or 1.5 <x <1.7, or even 1.7 ≦ x ≦ 1. The main component is TiO _x which can be 95.

The thin blocking layer can be partially nitrided. It is therefore deposited in a substoichiometric form rather than a stoichiometric form consisting of the MN _y type. Where M denotes the material and y is a number smaller than that for the stoichiometry of the nitride of the material, preferably 0.75 times the number for the normal stoichiometry of the nitride To 0.99 times.

  Similarly, a thin blocking layer can also be partially oxynitrided.

  This thin oxidized and / or nitrided blocking layer can be easily manufactured without damaging the functional layer. It is preferably deposited using a ceramic target in a non-oxidizing atmosphere, preferably consisting of a noble gas (He, Ne, Xe, Ar or Kr).

  The thin blocking layer can preferably be formed from substoichiometric nitrides and / or oxides to further enhance the reproducibility of the electrical and optical properties of the electrode.

  The selected thin substoichiometric oxide and / or nitride blocking layer is preferably Ti, V, Mn, Fe, Co, Cu, Zn, Zr, Hf, Al, Nb, Ni, Cr, Mo. , Ta, W, or a metal selected from at least one of these materials and a semi-stoichiometric alloy oxide as a main component may be used as a main component.

  Particularly preferred is based on an oxide or oxynitride of a metal selected from niobium Nb, tantalum Ta, titanium Ti, chromium Cr, or nickel Ni, or at least two of these metals Alloys formed from, in particular, niobium / tantalum (Nb / Ta) alloys, niobium / chromium (Nb / Cr) alloys, tantalum / chromium (Ta / Cr) alloys, or nickel / chromium (Ni / Cr) alloys. It is a layer containing the main component.

As a substoichiometric metal nitride, formed from a nitride of several metals such as silicon nitride SiN _x or aluminum nitride AlN _x , or chromium nitride CrN _x or titanium nitride TiN _x , or NiCrN _x It is also possible to select a layer.

A thin blocking layer uses a specific deposition atmosphere and the part of the blocking layer in contact with the functional layer is not oxidized more than the part of this layer furthest away from the functional layer, for example M (having a variable xi) N) may have an oxidation gradient such as O _xi .

A thin blocking layer may also be multilayer, in particular
-On the one hand, an "interface" layer in direct contact with the functional layer formed from a non-stoichiometric metal oxide, nitride or oxynitride-based material as described above;
-On the other hand, comprising at least one layer formed from a metallic material such as those mentioned above and in direct contact with the "interface" layer.

  The interfacial layer can be a single metal or multi-metal oxide, nitride, or oxynitride present in any adjacent metal layer.

  The electrode according to the present invention has electrical conductivity and / or transmittance or reflectance characteristics that can be adjusted as appropriate by changing the thickness of the metal functional layer or other layers and / or the deposition conditions. It has surface properties that are particularly adapted to similar organic light emitting systems.

For a given organic structure of an OLED element, the electrode of the present invention improves the efficiency of the OLED at lm / W from at least 5% to 10% for brightness above 500 cd / m ² compared to the ITO electrode. It is possible to

Electrode according to the present invention, for example, 0.02 m ² or more, or further may have a large area, such as area of 0.5 m ² or 1 m ^2.

  Preferably, the film forms a oxygen and / or water barrier and is a single metal oxide or a doped or undoped mixed metal rather than a more absorbing and / or insulating nitride layer It can have a thickness of 20 nm or more, such as a single layer or multiple layers of oxide.

Preferably, a coating layer is selected that has a conductivity greater than 10 ⁻⁶ S / cm or even greater than 10 ⁻⁴ S / cm, the coating layer being easily and / or rapidly manufactured, transparent and inexpensive .

The coating layer can preferably be based on at least one of the following transparent conductive metal oxides:
Indium oxide, zinc oxide, tin oxide and mixtures thereof, in particular mixed tin zinc oxide Sn _x Zn _y O _z , which is generally non-stoichiometric and amorphous phase, or mixed indium tin oxide ( ITO) or mixed indium zinc oxide (IZO).

  This type of metal oxide can generally be doped from 0.5% to 5%, especially for better stability of the deposition process and / or to further increase the conductivity. It is tin oxide, Al-doped zinc oxide (AZO), Ga-doped zinc oxide (GZO), or B, Sc, Sb-doped zinc oxide.

  These transparent conductive metal oxides may be superstoichiometric at the surface to increase the work function.

  The film can consist only of this coating layer having a thickness of 15 nm or more, for example 20 nm to 150 nm, in order to form the oxygen and / or water barrier simultaneously.

  Since this coating layer is preferably the final layer, it has a coating layer formed from ITO that is stable and further allows to retain the existing technology for manufacturing and optimization of the OLED organic structure. Is most particularly preferred.

  For economic reasons, if an ITO coating layer is chosen, in this regard it has a thickness of 30 nm or less, in particular 3 nm to 20 nm, and has a combined 15 nm or more, for example 30 nm to 150 nm. It is preferred to add an additional oxygen barrier layer below for the total thickness.

  Alternatively or in addition, the coating layer may comprise the following substoichiometric metal oxides: molybdenum oxide, nickel oxide, aluminum oxide, titanium oxide, zirconium oxide, tantalum oxide, silicon oxide, silver oxide, At least one of gold oxide, platinum oxide, and palladium oxide may be a main component, and preferably may have a thickness of 10 nm or less, such as 1 nm to 5 nm.

  These metal oxides are selected to be semi-stoichiometric in order to be sufficiently conductive and to be thin in order to be sufficiently transparent.

  The coating layer can be deposited by vacuum deposition techniques, in particular by atmospheric temperature evaporation or magnetron sputtering.

  Even more preferably, a coating layer is selected that can be preferably etched using the same etchant as the adhesion layer.

In one design of the invention, in order to prevent the functional layer from corroding, the electrode is between the blocking layer and the coating layer, most particularly an ITO (or IZO-ITO or IZO) coating. When the coating layer is thin (thickness is 20 nm or less), such as a layer or one formed from the above-described NiO _x type material, an oxygen and / or water barrier layer containing metal oxide as a main component can be included.

  The barrier layer is preferably one of the following metal oxides different from the material of the covering layer: zinc oxide, indium oxide, tin oxide, aluminum oxide, titanium oxide, zirconium oxide, tantalum oxide, and silicon oxide At least one may be the main component.

  Metal oxides can generally be doped at 2% to 5%, especially for better stability, S-doped tin oxide or Al-doped zinc oxide (AZO) or to increase conductivity Further, Ga-doped zinc oxide (GZO) or B, Sc, Sb-doped zinc oxide ZnOx.

The barrier layer may be mainly composed of a mixed oxide such as mixed tin zinc oxide Sn _x Zn _y O _z which is generally non-stoichiometric and in an amorphous phase, or mixed indium tin oxide (ITO). Alternatively, mixed indium zinc oxide (IZO) may be the main component.

  The barrier layer can be a single layer or multiple layers. This barrier layer preferably has a thickness (total thickness) of 3 nm to 150 nm, even more preferably 5 nm to 100 nm.

  Of course, the addition of this layer, devoted to protection, has greater freedom of choice with respect to the choice of coating layer that is simply selected to have the optimum surface properties, especially in the case of OLEDs to match the work function. Give a degree.

Preferably, transparent barrier layers that are easily and / or rapidly manufactured are selected, in particular doped, undoped layers based on ITO, IZO, Sn _x Zn _y O _z or ZnO _x. The

  It is even more preferred to select a barrier layer that can be etched, and those that are etched using the same etchant as that of the adhesion layer are preferred.

  The barrier layer can be deposited by vacuum deposition techniques, in particular by evaporation at ambient temperature or preferably by magnetron sputtering.

  In a preferred embodiment of the present invention, the adhesion layer and the barrier layer are of the same properties, in particular formed from pure, doped or even alloyed zinc oxide, preferably the covering layer is most ITO is included as an outer layer.

  Depending on the nature of the thin blocking layer, it is preferable to adapt the oxidation state and / or manufacturing conditions of the layer (barrier layer or covering layer) on the thin blocking layer.

  Thus, if the thin blocking layer is a metal layer, select a superstoichiometric upper layer and / or be highly reactive to oxidize the metal layer to reduce its absorption. It is possible to use a plasma.

Conversely, when the thin blocking layer is based on a substoichiometric metal nitride and / or metal oxide, the pure metal oxide layer or the doped metal oxide M (N) O _{x '} Vapor deposited. Here, x ′ is less than 1 to limit the peroxidation of the thin blocking layer and slightly less than 1 to avoid the extremely high absorption of this thicker overlying layer. In particular, a layer mainly composed of zinc oxide ZnO _{x ′} having _{x ′} of less than 1, preferably 0.88 to 0.98, particularly 0.90 to 0.95, is preferred.

Advantageously, the electrode according to the invention may have one or more of the following characteristics: That is,
-The sheet resistance is 10 Ω / □ or less for a functional layer having a thickness of 6 nm or more, preferably 5 Ω / □ or less for a functional layer having a thickness of 10 nm or more, preferably 70% or more, more preferably more than 80%. Combined with the light transmission _TL , this makes it a particularly satisfactory transparent electrode.
- sheet resistance, the functional layer of 50nm thickness greater than 1 [Omega / □ or less, preferably 0.6 ohm / □ or less, preferably 70% or more, even more preferably, the light reflectance _{R L} of greater than 80% In combination, this makes use as a particularly satisfactory reflective electrode.
The sheet resistance is 3Ω / □ or less, preferably 1.8Ω / □ or less for a functional layer with a thickness of 20 nm or more, preferably in combination with a _TL / _RL ratio of 0.1 to 0.7, Makes it a particularly satisfactory translucent electrode.
-RMS roughness with a surface of the coating layer of 3 nm or less, preferably 2 nm or less, even more preferably 1.5 nm or less, so as to avoid spike defects which significantly reduce the service life and reliability of the OLED. Rq).

  RMS roughness means root mean square roughness. This is a measure of roughness RMS deviation. Therefore, this RMS roughness is quantified by averaging the height of the peaks and valleys of the roughness with respect to the average height. Thus, an RMS roughness of 2 nm means twice the peak amplitude.

  It can be applied in various ways, for example by atomic force microscopy, by a mechanical stylus system (for example using a measuring instrument sold by VEECO under the trade name DEKTAK) and by optical interferometry. Can be measured. Measurements are generally performed over an area of 1 square micron by atomic force microscopy and over a larger area of about 50 microns to 2 millimeters with a mechanical stylus system.

  The functional layer is mainly composed of a pure material selected from silver Ag, Au, Cu, or Al, or Ag, Au, Al, Pt, Cu, Zn, In, Si, Zr, Mo, Ni. , Cr, Mg, Co, Sn, and Pd are used as the main component. For example, Pd-doped silver or gold / copper alloy or silver / gold alloy.

  The functional layer can be deposited by vacuum deposition techniques, in particular by evaporation at ambient temperature or preferably by magnetron sputtering.

  If high conductivity is particularly required, it may be preferable to select a pure material. It may be preferable to select a doped or alloyed material, especially when significant mechanical properties are required.

  Preferably, a layer based on silver is selected for its conductivity and its transmittance.

  The thickness of the selected functional layer containing silver as a main component can be 3 nm to 20 nm, and preferably 5 nm to 15 nm. In this thickness range, the electrode remains transparent.

  However, it is not excluded to have a much thicker layer, especially when the organic light emitting system is reflective. The thickness of the selected functional layer mainly composed of silver can be 50 nm to 150 nm, and preferably 80 nm to 100 nm.

  The thickness of the selected functional layer mainly composed of silver can be further set to 20 nm to 50 nm in order to switch mainly from the transmission operation to the reflection operation.

  The adhesion layer preferably comprises the following stoichiometric or non-stoichiometric metal oxides: chromium oxide, indium oxide, zinc oxide, aluminum oxide, titanium oxide, molybdenum oxide, zirconium oxide, antimony oxide, oxidation At least one of tantalum, silicon oxide, or tin oxide can be the main component.

  In general, the metal oxide can be doped from 0.5% to 5%. In particular, it may be Al-doped zinc oxide (AZO), Ga-doped zinc oxide (GZO), or even B-doped, Sc-doped, or Sb-doped zinc oxide for better stability of the deposition process, or It can be F-doped or S-doped tin oxide.

The adhesion layer is made of mixed oxide, in particular non-stoichiometric mixed zinc zinc oxide Sn _x Zn _y O _z as an amorphous phase, or mixed indium tin oxide (ITO) or mixed indium zinc oxide (IZO). It may be the main component.

  The adhesion layer can be a single layer or a multilayer. This layer preferably has a thickness (total thickness) of 3 nm to 30 nm, even more preferably 5 nm to 20 nm.

Preferably, a non-toxic layer, a layer that is easily and / or rapidly manufactured and optionally transparent, especially based on ITO, IZO, Sn _x Zn _y O _z or ZnO _x A doped or undoped layer is selected.

It is even more preferred to select a layer of crystalline nature in the preferred growth orientation in order to promote heteroepitaxy of the functional metal layer. This layer can be etched most particularly by RIE (reactive ion etching) or even more preferably by wet etching (which can easily be integrated into the manufacturing stage and carried out at atmospheric pressure). Preferably, the same etchant (acid solution, Ar, CF ₄ , SF ₆ , O ₂ type reactive plasma, etc.) is used for the coating layer.

Therefore, a layer of zinc oxide ZnO _x with _x preferably less than 1, even more preferably 0.88 to 0.98, in particular 0.90 to 0.95 is preferred. This layer may be pure, as already indicated, or may be doped with Al or Ga.

  Applicants have found that the functional layer is relatively thick, eg, having a thickness of 30 nm to 70 nm (depending on the concentration and etchant selected), especially if the functional layer is relatively porous. Even if it exists, it discovered that the wet etching of the electrode in 1 step was possible. It is possible to obtain a predetermined porosity of this functional layer by changing the deposition parameters. Therefore, it is possible to select a relatively high pressure. Other parameters such as the temperature of the process and the mixture of gases used during the process can also vary.

  Within the context of the present invention, if the material dissolves in the solution or is sufficiently corroded by the solution, the material can be etched by the etchant and at least with a slight mechanical action (especially using a low pressure jet) The material adherence is sufficiently weakened so that (rinsing) is sufficient to remove the material.

  The adhesion layer can be deposited by various techniques. For example, it can be deposited by pyrolysis techniques, particularly in the gas phase (techniques are often indicated by abbreviated CVD representing chemical vapor deposition).

  The conductive layer can be deposited by vacuum deposition techniques, in particular by evaporation at ambient temperature or preferably by magnetron sputtering. Sputtering may be reactive sputtering (using a metal or semi-oxidized target in an oxidizing atmosphere) or non-reactive sputtering (using a ceramic target in an inert atmosphere).

  In particular, when the adhesion layer is mainly composed of a metal oxide, for example, a metal having a thickness of 5 nm or less, preferably 0.5 nm to 2 nm, mainly composed of the above-described materials for the blocking layer, and / or A thin blocking layer called a lower blocking layer mainly composed of metal oxide, oxynitride, or nitride having a thickness of 10 nm or less, preferably 0.5 nm to 2 nm, is formed of an adhesion layer and a functional layer. It is possible to insert between.

  This thin lower blocking layer (whether single or multilayer) serves as a bonding, nucleation and / or protective layer during any heat treatment performed after deposition.

  Furthermore, the electrode according to the present invention may be accompanied by a base layer capable of forming an alkali metal barrier, particularly when the adhesion layer is mainly composed of an oxide.

  The base layer has many effects on the electrode according to the present invention. First, the base layer can be a barrier to alkali metal below the electrode. It protects the adhesion layer from any dirt (so that dirt can lead to mechanical defects such as delamination). It also retains the conductivity of the metal functional layer. It also prevents the organic structure of the OLED element from being contaminated by alkali metals that actually significantly reduce the service life of the OLED.

  Alkali metal migration may occur during device manufacture, resulting in a lack of reliability and / or subsequent shortening of the service life.

  The base layer improves the bonding properties of the adhesion layer without significantly increasing the roughness of the assembly.

  Of course, the present invention is most particularly advantageous when the support substrate tends to release alkali metals, such as transparent or specially transparent soda-lime-silica glass.

  Furthermore, for this particular multilayer coating structure, a reliable electrode can also be obtained, allowing a significant productivity increase to be realized.

  The base layer is robust, easy and quick to deposit using various techniques. For example, it can be deposited by pyrolysis techniques, particularly in the gas phase (this technique is often indicated by abbreviated CVD representing chemical vapor deposition). This technique is beneficial in the case of the present invention, as appropriate adjustment of the deposition parameters allows very dense layers to be obtained for improved barriers.

  The base layer can be deposited by vacuum deposition techniques, in particular by evaporation at ambient temperature or magnetron sputtering.

  The base layer may optionally be doped with aluminum to make its vacuum deposition more stable.

  The base layer (whether monolayer, multilayer, and optionally doped) can have a thickness of 10 nm to 150 nm, even more preferably 20 nm to 100 nm.

The base layer may preferably be as follows: That is,
The main component is silicon oxide or silicon oxycarbide and this layer has the general formula SiOC, or
The main component is silicon nitride, silicon oxynitride or silicon oxycarbonitride, and this layer has the general formula SiNOC, in particular SiN, more particularly Si ₃ N ₄ .

  The electrode can preferably comprise a wet etch stop layer between the base layer and the adhesion layer, in particular with a main component of tin oxide, in particular with a thickness of 10 nm to 100 nm, even more preferably 20 nm to 60 nm. Most particularly, for simplicity, the wet etch stop layer may be part of the base layer or the base layer, preferably silicon nitride as the main component or enhanced by anti-wet etch properties. Therefore, it may be a layer mainly composed of silicon oxide or silicon oxycarbide having tin (a layer of general formula SnSiOCN).

  The wet etch stop layer serves to protect the substrate in the case of chemical etching or reactive plasma etching.

  Due to the etch stop (dry or wet), the base layer remains present even in the etched or patterned areas. Thus, alkali metal migration can be stopped by edge effects between the substrate and the adjacent electrode portions (or even organic structures) in the etched region.

Most particularly preferred is a base / etch stop layer formed (essentially) from doped or undoped silicon nitride Si ₃ N ₄ . Silicon nitride is deposited very quickly and forms an excellent barrier to alkali metals. Furthermore, because of its high optical index relative to the support substrate, the optical properties of the electrodes can be adapted, preferably by changing the thickness of this base layer. Therefore, for example, it is possible to adjust the transmission color when the electrode is transparent, or the reflection color when the opposing surface of the support substrate is a mirror.

  Advantageously, the base layer and preferably any wet etch stop layer may cover approximately all (or almost all) of the major surface of the flat glass substrate.

  And even more preferably, the adhesion layer, optional lower blocking layer, functional layer, thin blocking layer, and film are constructed with exactly the same etching pattern, and preferably by a single wet etching operation. . This will be explained in detail later in this application.

  The etch stop layer is preferably intact if present, but may be slightly etched, for example, over 10% of its original thickness. Preferably, the same applies to the base layer in the absence of an etch stop layer.

  The electrode may be wider than the organic structure or other elements on the surface to make easier electrical contact.

  Furthermore, the boundary of the coating layer preferably has a thickness of 0.5 μm to 10 μm and is composed of a metal alloy such as Mo, Al, Cr, Nd, MoCr, AlNd, or MoCr / Al / MoCr. A current supply strip in the form of a single layer metal formed from one of the multilayer metals (which may be continuous or discontinuous and forms part of the collector or current distributor ) May be placed.

  This strip can be designed during the etching stage.

  The electricity supply means may also be added after the etching operation, for example, may be formed from conductive enamel, may be based on silver, and may be screen printed.

In preferred embodiments of the invention, one or more of the following configurations may optionally further be employed. That is,
-The total thickness of ITO or even indium in the electrode may be 30 nm or less, or even less than 20 nm.
The total thickness (with the base layer) is from 30 nm to 250 nm;

  The invention applies not only to multi-layer coatings having only a single “functional” layer, but also to multi-layer coatings comprising a plurality of functional layers, in particular two or three films and alternating two functional layers.

  In the case of a multi-layer coating having a plurality of functional layers, at least one and preferably each functional layer has a blocking layer (or “underblocker” referred to as an “overblocker” layer according to the invention). (Blocking layer called “underblocker” layer).

  Thus, the electrode has the following structure in which the optional base layer and / or wet etch stop layer is mounted n times, which is an integer greater than 1, ie an adhesion layer, optionally a thin lower blocking layer, function A layer, a thin blocking layer, and optionally a water and / or oxygen barrier layer, the structure comprising an adhesion layer, a functional layer, a thin blocking layer, optionally a water and / or oxygen barrier layer, and the covering layer. Contains a continuum containing.

  A flat substrate may be transparent (especially for radiation through the substrate). The flat substrate may be rigid, flexible, or semi-flexible.

The main surface may be rectangular, square, or any other shape (circular, elliptical, polygonal, etc.). This substrate has, for example, a large size with a lower electrode having an area larger than 0.02 m ² , even 0.5 m ² or 1 m ² and occupying substantially the entire area (away from the structural region). It may be.

The flat substrate is preferably made of glass, in particular soda-lime-silica glass. Advantageously, the substrate is at the wavelength of the OLED radiation, less than 2.5 m ^-1, preferably may be a glass having an absorption coefficient of less than 0.7 m ^-1.

For example, soda-lime-silica glass with less than 0.05% Fe (III) or Fe ₂ O ₃ , especially glass DIAMANT from Saint-Gobain Glass, glass OPTIWHITE from Pilkington, or from Schott Glass B270 is selected. All specially transparent glass compositions described in WO 04/025334 can be selected.

  In a configuration selected for emission of the OLED system through the thickness of the transparent substrate, some of the emitted radiation is guided into the substrate.

  Furthermore, in an advantageous design of the invention, the thickness of the glass substrate selected can be, for example, at least 1 mm, preferably at least 5 mm. This allows the number of internal reflections to be reduced, thus allowing more of the radiation guided into the glass to be extracted, thereby increasing the brightness of the light emitting area.

  The edge of the panel may also be reflective, preferably with a mirror, to optimize the reuse of guided radiation. The edge then has an outer angle of 45 ° or more, preferably 80 ° or more but less than 90 °, using the main surface associated with the OLED system to change the direction of radiation over a wider extraction area. Thus, the panel can be tilted.

  In Japanese Patent Application Laid-Open No. 2005-038642, in order for the electrodes to be electrically separated, the bottom electrode is constructed at various etching rates in several etching steps with various acids. Therefore, the work function adjusting layer is first etched, then the metal layer, and finally the adhesion layer.

  One object of the present invention is that it does not sacrifice its conductive properties and its optical quality, as well as the performance of the device incorporating it, in particular without causing manufacturing difficulties during wet etching (especially thermal and In order to form a robust and reliable electrode (with respect to mechanical stability and / or resistance), an assembly of conductive layers can be obtained.

Accordingly, the present invention is a process for acid etching of a multilayer electrode on a substrate (especially a glass substrate) comprising an acid etch stop layer, preferably comprising silicon nitride as a main component, the electrode comprising:
- zinc oxide, mixed oxide of tin, zinc, mixed indium tin oxide, or a mixed indium zinc oxide _{(ZnO x, ZnO x, Sn} x Zn y O z, ITO, or IZO) are selected from doped or non An adhesion layer formed from a doped metal oxide;
-Optionally including a metal layer having a thickness of 5 nm or less and / or a layer having a thickness of 10 nm or less based on a substoichiometric metal oxide or metal oxynitride or metal nitride A thin lower blocking layer directly under the layer;
A doped or undoped metal functional layer selected from silver and / or gold, having a thickness of 70 nm or less and having intrinsic conductivity properties;
Directly above the functional layer, including a metal layer having a thickness of -5 nm or less and / or a layer having a thickness of 10 nm or less mainly composed of a substoichiometric metal oxide, metal oxynitride, or metal nitride A thin blocking layer of
A doped or undoped metal oxide barrier layer, optionally selected from zinc oxide, mixed tin zinc oxide, mixed indium tin oxide, or mixed indium zinc oxide;
A coating layer formed from an oxide of any mixed conductivity selected from indium oxide, zinc oxide and tin oxide, and / or molybdenum oxide, nickel oxide, aluminum oxide, titanium oxide, zirconium oxide, A coating layer having a thickness of 10 nm or less formed from a substoichiometric oxide selected from tantalum oxide, silicon oxide, or silver oxide, gold oxide, platinum oxide, or palladium oxide;
Uses nitric acid mixed with pure nitric acid HNO ₃ or HCl HCl, or an acid solution selected from hydrochloric acid mixed with pure hydrochloric acid or ferric chloride FeCl ₃ (also known as iron (III) chloride) A process is provided in which a one-step etching is performed.

  Of course, the etch stop layer may be the base layer already described above.

  Therefore, the etching pattern can be etched such that the width and spacing vary depending on the application.

  Etching is preferably in the form of a single layer mainly composed of one of the following metals, that is, Mo, Al, Cr, Nd, or an alloy such as MoCr, AlNd, or MoCr / Al / MoCr, etc. Can be carried out in the presence of at least one metal current supply strip which is in the form of multiple layers.

  The invention also provides an organic light emitting device comprising at least one supporting substrate, in particular a glass substrate, provided with at least one organic light emitting layer arranged between a bottom electrode and a so-called top electrode as described above. It relates to an element.

  OLED elements can produce monochromatic light, in particular blue light and / or green light and / or red light, or can be adapted to produce white light.

  Several methods are possible to produce white light: That is, a mixture of compounds (red, green, blue radiation) in a single layer, three organic structures (red, green, blue radiation) or a laminate on the electrode surface of two organic structures (yellow and blue), electrodes A series of three adjacent organic structures (red, green, blue emission) with one organic structure of one color on the surface and a suitable phosphor layer on the other surface.

  An OLED element emits white light, or emits red, green, and blue light by a series of three systems, for example, a plurality of adjacent organic lights connected in series A system can be provided.

  The element may form part of a plurality of glazing units, in particular a vacuum glazing unit or one having an air layer or other gas layer. The element may also be monolithic and include a monolithic glazing unit so as to be smaller and / or lighter.

  The OLED system can be bonded to another flat substrate, preferably referred to as a transparent cover, such as glass, or preferably laminated, using laminated interlayers, especially specially transparent interlayers.

  Laminate glazing units are usually composed of two rigid substrates with a thermoplastic polymer sheet or a stack of such sheets disposed therebetween. The invention also includes what is referred to as an “asymmetric” laminated glazing unit, particularly using a glass-type rigid support substrate and one or more protective polymer sheets as a cover substrate.

  The present invention also includes a laminated glazing unit having at least one intermediate layer sheet based on an elastomer-type single-sided or double-sided adhesive polymer (i.e., which does not require a laminating operation in the sense of general terms), That is, a laminate that generally requires heating under pressure to soften and stick the thermoplastic interlayer sheet).

  In this configuration, the means for fixing the cover to the support substrate is consequently a laminated intermediate layer, in particular a thermoplastic sheet such as, for example, polyurethane (PU), polyvinyl butyral (PVB) or ethylene / vinyl acetate (EVA). Or a thermosetting single component or multiple component resin (epoxy, PU), or an ultraviolet curable single component or multiple component resin (epoxy, acrylic resin). Preferably, the sheet has (substantially) the same dimensions as the cover and the substrate.

The laminated intermediate layer can prevent the cover from being bent, particularly for a large element having an area exceeding 0.5 m ² , for example.

In particular, EVA shows a number of effects:
-The volume contains little water,
-High pressure is not necessarily required to process it.

  Thermoplastic laminated interlayers are preferred for covers formed from casting resins because they are easier to mount and more economical, and perhaps more impervious.

  The intermediate layer optionally includes an array of conductive wires disposed within what is referred to as the inner surface facing the top electrode, and / or a conductive layer or conductive strip on the inner surface of the cover.

  The OLED system can preferably be placed inside a double glazing unit with a layer of gas, in particular a noble gas (eg argon).

The top electrode can advantageously be a metal oxide, in particular a conductive layer selected from the following materials:
Doped zinc oxide, in particular zinc oxide ZnO doped with aluminum: ZnO: Al or zinc oxide ZnO: Ga doped with gallium,
Or alternatively indium oxide doped, in particular indium oxide doped with tin (ITO) or indium oxide doped with zinc (IZO).

  More generally speaking, any type of transparent conductive layer can be used, for example, a TCO (transparent conductive oxide) layer having a thickness of 20 nm to 1000 nm.

  For example, TCC (transparent conductive coating) formed from Ag, Al, Pd, Cu, Pd, Pt, In, Mo, Au generally having a thickness of 5 nm to 150 nm, depending on the desired light transmittance / reflectance It is also possible to use a thin metal layer referred to as

  The electrodes are not necessarily continuous. The top electrode may include a plurality of conductor strips or conductor wires (mesh).

Furthermore, it is advantageous to add a film having a predetermined functionality on the surface facing from the substrate supporting the electrode according to the invention or on an additional substrate. This may be an antifogging layer (using a hydrophilic layer), an antifouling layer (a photocatalytic coating comprising TiO ₂ at least partially crystallized in the anatase form) or, for example, Si ₃ N ₄ / SiO ₂ / Si ₃ An antireflection multilayer coating made of N ₄ / SiO ₂ type or a UV filter such as a titanium oxide (TiO ₂ ) layer can be used. It can also be one or more phosphor layers, a mirror layer, or at least one scattered light extraction region.

  The present invention also relates to various applications in which these OLED elements may be placed, wherein the elements form one or more light emitting surfaces that are transmissive and / or reflective (mirror function), both outdoors and indoors. For both applications.

  Alternatively or in combination, the elements can form systems such as lighting, decoration, architecture, or display display panels such as, for example, drawings, logos or alphanumeric display types, especially emergency exit panels.

  The OLED elements can be arranged to create uniform light, particularly for homogeneous illumination, or to create various light emitting areas of the same or different intensities.

  Conversely, different lighting may be required. An organic light emitting system (OLED) creates a direct light region, the other light emitting region being obtained by extraction of OLED radiation guided by total reflection at a substrate thickness selected to be formed from glass.

  To form this other light emitting area, the extraction area may be adjacent to the OLED system or on the opposite side from the substrate. A single extraction region or a plurality of extraction regions can serve the function of increasing the illumination provided, for example, by a direct light region, in particular for architectural lighting or for displaying a light-emitting panel. The single extraction region or the plurality of extraction regions is preferably in the form of one or more light bands that are particularly uniform, and these are preferably arranged around one of the faces. These bands can form a high luminous frame, for example.

  The extraction is performed by the following means arranged in the extraction region, that is, preferably a diffusion layer mainly composed of inorganic particles and preferably having an inorganic binder, a substrate formed to diffuse, particularly a rough or rough substrate. Realized by at least one of them.

  Each of the two main surfaces may have a direct light region.

  If the electrodes and organic structures of the OLED system are selected to be transparent, lighting windows can be manufactured in particular. And the improvement in room lighting does not impair the light transmission. It is also possible to control the reflection level, for example, to effectively meet the anti-glare criteria for the walls of a building, for example, by limiting light reflection outside the lighting window.

More broadly, elements, particularly partially or totally transparent elements,
-For outdoor lighting glazing, internal lighting partitions, or lighting glazing doors (or parts of doors), especially for buildings such as sliding doors,
-It may be used for transport vehicles such as light-emitting roofs, light-emitting side windows (or part of windows), internal light partitions of land, water or air vehicles (cars, trucks, trains, airplanes, boats, etc.)
-May be intended for city or specialized equipment such as bus shelter panels, display counter walls, jewelry display stands or store windows, greenhouse walls, or lighting tiles,
-For indoor equipment such as shelves or display cabinet elements, display cabinet facades, lighting tiles, ceilings, lighting refrigerator shelves, aquarium walls, etc.
-It may be intended for backlighting electronic devices, in particular display screens, optionally dual screens such as television screens or computer screens, touch sensitive screens.

  For example, it is possible to envisage backlighting for both screens having different sizes, with a small screen preferably accompanied by a Fresnel lens to collect the light.

  To form an illumination mirror, one of the electrodes may be reflective, or if it is desired to preferentially illuminate only one side of the direct light region, the mirror is an OLED It may be arranged on the surface facing the system.

  It can also be a mirror. The lighting panel may serve to illuminate the bathroom wall or kitchen countertop or may be a ceiling.

  OLEDs are generally divided into two broad categories depending on the organic material used.

When the light emitting layer is formed of small molecules, the element is referred to as SM-OLED (Small-Molecular Organic Light-Emitting Diodes). Thin layer organic light-emitting materials are, for example, composite AlQ ₃ (tris (8-hydroxyquinoline) aluminum), DPVBi (4,4 ′-(diphenylvinylene) biphenyl), DMQA (dimethylquinacridone), or DCM (4- It is composed of evaporated molecules such as (dicyanomethylene) -2-methyl-6- (4-dimethylaminostyryl) -4H-pyran). The emissive layer is also, for example, of 4,4 ′, 4 ″ -tri (N-carbazolyl) triphenylamine (TCTA) doped with fac-tris (2-phenylpyridine) iridium (Ir (ppy) ₃ ). It may be a layer.

  In general, an SM-OLED structure includes a laminate of an HIL (hole injection layer), an HTL (hole transport layer), a light emitting layer, and an ETL (electron transport layer).

  An example of the hole injection layer is copper phthalocyanine (CuPC), and the hole transport layer is, for example, N, N′-bis (naphthalen-1-yl) -N, N′-bis (phenyl) benzidine (α -NPB).

The electron transport layer may be composed of tris (8-hydroxyquinoline) aluminum (AlQ ₃ ) or batho-phenanthroline (BPhen).

  The top electrode can be a Mg / Al or LiF / Al layer.

  Examples of organic light emitting stacks are described, for example, in US Pat. No. 6,645,645.

  When the organic light emitting layer is a polymer, the device is referred to as a PLED (polymer light emitting diode).

  Thin layer organic light emitting materials include, for example, PPV representing poly (para-phenylenvinylene), PPP (poly (para-phenylene)), DO-PPP (poly (2-decyloxy-1,4-phenylene)), MEH-PPV (poly [2- (2′-ethylhexyloxy) -5-methoxy-1,4-phenylenevinylene]), CN-PPV (poly [2,5-bis (hexyloxy) -1,4-phenylene) -(1-cyanovinylene)]) or CES polymer (PLED) such as PDAF (polydialkylfluorene), and the polymer layer is also composed of, for example, PEDT / PSS (poly (3,4-ethylenedioxythiophene) / It is accompanied by a layer (HIL) that promotes hole injection composed of poly (4-styrenesulfonate).

One example of a PLED is the following stack:
A layer of poly (2,4-ethylenedioxythiophene) (PEDOT: PSS) doped with poly (styrenesulfonate) having a thickness of −50 nm;
It consists of a layer of phenyl poly (p-phenylene vinylene) Ph—PPV having a thickness of −50 nm. The top electrode may be a Ca layer.

  The invention will now be described in further detail by way of non-limiting examples and drawings.

1 is a schematic cross-sectional view of a uniform (backlighting) organic light emitting device including a bottom electrode according to the present invention in a first embodiment. It is the fragmentary figure which shows this bottom face electrode in detail. It is a figure which shows the process for manufacturing and etching this electrode. FIG. 6 shows a schematic cross-sectional view of a uniform (back) -lighting organic light-emitting device comprising a bottom electrode according to the invention in a second embodiment arranged in several areas. FIG. 6 shows a schematic top view showing a schematic for electrically connecting electrodes similar to those used in the second embodiment. FIG. 6 shows a schematic top view showing a schematic for electrically connecting electrodes similar to those used in the second embodiment. Figure 2 shows a schematic cross-sectional view of an organic light emitting device used for different illumination.

  It should be pointed out that for the sake of clarity, the various elements of the object shown (including angles) are not necessarily drawn to scale.

FIG. 1 is intentionally very schematic. It comprises an organic light-emitting device 10 (bottom light-emitting device, comprising a flat substrate made of 2.1 mm thick transparent or specially transparent soda-lime-silica glass 1 including the first and second main surfaces 11, 12. That is, light is emitted through the substrate). The first main surface 11 is
A base layer 2 formed of silicon nitride having a thickness of −10 nm to 80 nm and covering almost all of the first main surface 11, which is directly deposited on the first main surface 11 and also functions as a wet etching stop layer When,
An etched bottom electrode 3 comprising a multilayer coating (see FIG. 2) and selected to be transparent deposited directly on the base layer 2;
An organic light emitting system 4 which is a SM-OLED composed of a structure;
A reflective top electrode 5, in particular made of metal, in particular of silver or aluminum as the main component,
The multilayer coating of the bottom electrode 3 is
An adhesion layer 31 selected from doped or undoped ZnO _x , Sn _x Zn _y O _z , ITO or IZO;
A functional layer 32 directly on the adhesion layer 31 and formed from silver, preferably pure silver;
-Preferably formed from a metal layer obtained by a metal target having a neutral plasma or one or more metal nitrides and / or oxides such as Ti, Ni, Cr, etc., preferably having a neutral plasma A thin blocking layer 32 'directly above the functional layer 32, which is a layer obtained by a ceramic target;
The adhesion layer and the water and / or oxygen barrier layer have the same properties, and a protective layer 33 selected from ZnO _x , Sn _x Zn _y O _z , ITO, or IZO, and
Preferably, ZnO: Al has a thickness of 5 nm to 20 nm, silver has a thickness of 5 nm to 15 nm, TiO _x , Ti, or NiCr has a thickness of 0.5 nm to 2 nm, ZnO: Work function adjustment where Al has a thickness of 5 nm to 20 nm and ITO has a thickness of 5 nm to 20 nm, multilayer coating ZnO: Al / Ag / Ti, TiO _x , or NiCr / ZnO: Al / ITO Coating layer 34
And a type including a film formed from
The structure of the organic light emitting system 4 is, for example, an α-NPD layer,
-TCTA + Ir (ppy) ₃ layers,
A BPhen layer and a LiF layer.

  The bonds from layer 2 to layer 5 were deposited by magnetron sputtering at ambient temperature.

The bottom electrode 3 has the following characteristics.
Sheet resistance of -5Ω / □ or less.
A light transmittance T _L of 70% or more (measured on all layers before structuring) and a light reflectance R _L of 20% or less.
-RMS roughness (or Rq) of 3 nm or less by optical interferometry over an area of 1 square micron by atomic force microscopy.

For Si ₃ N ₄ (25 nm) / ZnO: Al (10 nm) / Ag (12 nm) / Ti (1 nm) / ZnO: Al (20 nm), ITO (20 nm), 83% T _L , stable sheet resistance, and 1.3 nm RMS roughness is obtained. The Ti layer is deposited by sputtering in an inert atmosphere consisting of a noble gas (He, Ne, Xe, Ar, or Kr) (ie, no oxygen or nitrogen is intentionally introduced).

The deposition conditions for each layer are preferably as follows:
The layer composed mainly of Si ₃ N ₄ is deposited by reactive sputtering using an aluminum-doped silicon target in an argon / nitrogen atmosphere at a pressure of 0.8 Pa.
The layer based on silver is deposited using a silver target at a pressure of 0.8 Pa in a pure argon atmosphere.
The Ti layer is deposited using a titanium target at a pressure of 0.8 Pa in a pure argon atmosphere.
The layer based on ZnO is deposited by reactive sputtering using a zinc target doped with aluminum in an argon / oxygen atmosphere at a pressure of 0.3 Pa.
The ITO-based layer is deposited using a ceramic target in an argon / oxygen atmosphere.

For a series of three samples each supporting the multilayer coating Si ₃ N ₄ (25 nm) / ZnO: Al (10 nm) / Ag (12 nm) / Ti (1 nm) / ZnO: Al (20 nm) / ITO (20 nm) Sheet resistances of 4.35Ω / □, 4.37Ω / □, and 4.44Ω / □ are obtained, respectively. That is, the maximum deviation is 0.11 and the average sheet resistance is 4.39Ω / □.

  Sheet resistances of 4.4 Ω / □, 4.75 Ω / □, and 4.71 Ω / □ are obtained, respectively, for a series of three comparative samples that each support this multilayer coating without a thin blocking layer. That is, the maximum deviation is 0.35, which is larger than 3 times, and the average sheet resistance is 4.62 Ω / □.

With this organic structure, the electrode of the present invention allows the efficiency of the OLED at lm / W to be improved from at least 5% to 10% for brightness above 500 cd / m ² compared to the ITO electrode. And

  As a variant, the first electrode uses a thin lower blocking layer, in particular a metal layer, preferably obtained using a metal target with inert plasma, or preferably a ceramic target with inert plasma. And a layer formed from nitrides and / or oxides of one or more metals such as Ti, Ni, and Cr.

As a modification, the first electrode may be a translucent electrode. About 15% of Si ₃ N ₄ (20 nm) / ZnO: Al (20 nm) / Ag (30 nm) / TiO _x (1 nm) or NiCr (1 nm) / ZnO: Al (40 nm) / ITO (20 nm) T _L , about 80% R _L and a sheet resistance of 0.9Ω / □ are obtained.

  The first electrode may also be a reflective electrode.

  The bottom electrode 3 extends along one side of the glass 1. Therefore, the boundary of the coating layer 34 preferably has a thickness of 0.5 μm to 10 μm, for example, 5 μm, and an alloy such as Mo, Al, Cr, Nd, MoCr, AlNd, or MoCr / Al / MoCr. A first metal current supply strip 61 in the form of a layer formed from one of the multi-layer metals is mounted.

  The bottom electrode 3 may include a base layer as a modification, and may have a structure repeated n times that is an integer of 1 or more, and the structure includes an adhesion layer / functional layer / thin blocking layer / optional And a water and / or oxygen barrier layer.

  This structure carries a continuous layer comprising an adhesion layer / functional layer / optionally water and / or oxygen barrier layer / the coating layer.

  For example, in the case of a stack of organic structures emitting in red, green and blue to produce white light, it is also possible to repeat all elements 3, 4, 5 three times, Alternatively, for additional bottom electrode, simply use Al / ITO or a multilayer containing Ag / optionally similar blocking layer / ITO or Ag / optionally similar blocking layer / ZnO / ITO. Is possible.

  The top electrode extends from the glass 1 along the facing surface. The boundary of the top electrode 5 optionally carries a second metal current supply strip, preferably similar to the first metal strip. This second strip is preferred when the top electrode has a thickness of 50 nm or less.

  In practice, the second electrode may be a transparent or translucent electrode as a modification, and may be the same as the first electrode, for example. In this case, a reflector that is a metal layer having a thickness of, for example, 150 nm is optionally added to the second surface 12.

  The EVA sheet can be used to laminate the glass 1 to another glass plate that preferably has the same properties as the glass 1. Optionally, the glass surface 12 facing the EVA sheet is provided with a multi-layer coating with a predetermined functionality as described below.

  The bottom electrode 3 is formed in, for example, two parts separated by a structural region 310 that is a line.

  Wet etching is used to electrically isolate the bottom electrode 3 from the top electrode of the element 10.

Use acid-resistant adhesive tape or deform to etch the entire bottom electrode (adhesion layer, functional layer, blocking layer, protective layer, and coating layer) with the same etching pattern and in one operation A layer partially masked using a photolithographic mask as an example is exposed to one of the following acid solutions:
-HCl (eg 40% concentration),
-Or HCl (eg 4% concentration),
Or a mixture of HCl (eg 4% concentration) / HNO ₃ (eg 7% concentration),
Or an HCl / FeCl ₃ mixture,
-Or HNO ₃ having a concentration of 10% to 18%.

Etching with hydrochloric acid results in a very uniform etching profile. Nitric acid / hydrochloric acid mixtures also give beneficial results. A HCl / FeCl ₃ mixture is conventionally used in the case of ITO.

  Etching profile, etching time, and resolution can be adapted by using a mixture of two acids and changing the concentration.

  Therefore, it is possible to perform etching having a width and interval that vary depending on the application.

  For small passive matrix OLED screens (for displays of electronic devices such as mobile phones, displays, mobile terminals, MP3 players, etc.), the width of each etched region can generally be 10 μm to 20 μm, The areas formed are spaced 10 μm to 50 μm, for example 35 μm (corresponding to the width of each electrode area).

  For example, in the case of large passive matrix OLED screens for advertising or display displays, the width of each etched region can be about 0.5 mm, and the width of each electrode region can be several mm, several cm. It can be set as above.

  For uniform illumination, the width of each etched region can be 100 μm or less, more preferably 50 μm or less, regardless of the size of the screen.

  FIG. 3 shows a process for manufacturing and etching this electrode.

  After the base layer 2, the electrode 3, and the metal current supply layer 6 are deposited (whether single layer or multilayer), this layer 6 uses a solution that does not etch the electrode, such as sodium hydroxide, for example. (Step E1), then the bottom electrode 3 is etched in a single step as described above (step E2), followed by deposition of an OLED system 4 and a top electrode 5, for example made of Al. (Step E3).

  FIG. 4 shows a schematic cross-sectional view of a uniform (backlighting) organic light emitting device 10 ′ comprising a bottom electrode according to the invention in a second embodiment arranged in several areas. .

  The second element 10 'differs from the first element 10 depending on the elements described later.

  The element 10 'comprises two adjacent organic light emitting systems 4a, 4b, each preferably emitting white light or, alternatively, a series of 3 of red, green and blue light. Emit light. The systems 4a and 4b are connected in series. The bottom electrode is mainly divided into two rectangles or squares 3a and 3b each having a side of about 10 cm extending to one side (left side in the figure). These electrode regions are separated by an etching region 310. The second electrode region 3 b is separated from the “remaining” bottom electrode region (right side in the figure) by the etching region 320. The first bottom electrode portion 3 a is partially covered with a first metal strip that forms the bus bar 61.

  The top electrode is also divided. The first upper surface electrode portion 5a extends toward the right side and covers the left end portion of the second bottom surface electrode portion 3b. The second upper surface electrode portion 5 b extends toward the right side, covers the left end portion of the remaining bottom electrode portion, and is covered with a second metal strip that forms the bus bar 62.

  The etched regions 310 and 320 are, for example, strips having a width of 20 μm to 50 μm so that they are hardly visible to the naked eye.

  5 and 6 show schematic top views showing two alternatives for electrically connecting electrodes 20, 20 'similar to those used in the second embodiment.

  In FIG. 5, three organic light emitting systems 4a to 4c are connected in series. The etched regions 310 and 320 are strips having a width of 20 μm to 50 μm so that they are hardly visible to the naked eye.

  The bottom electrode is divided into three rectangles each having a width of about 10 cm each extending on one side (left side in the figure). They are separated by etching regions 310, 320. The top electrodes 5a to 5c are also divided into three. The first bottom electrode portion is partially covered with a first metal strip that forms the bus bar 61.

  The first two upper surface electrode portions 5a and 5b extend toward the right side and cover the left end portion of the adjacent bottom surface electrode portion. The third upper surface electrode portion 5 c extends toward the right side, covers the left end portion of the remaining bottom surface electrode portion, and is partially covered by the second metal strip that forms the bus bar 62.

  In FIG. 6, six organic light emitting systems 4a to 4c, 4'a to 4'c are connected in series (three upper ones and three lower ones). Etching regions 310 to 330 are laterally oriented 310, 320 and longitudinally oriented 330, and are strips having a width of 20 μm to 50 μm so that they are hardly visible to the naked eye.

  The bottom electrode is divided into six squares each having a side of about 10 cm extending to one side (left side in the figure). The bottom electrode portion is separated from the etched region 310 by 330 '. The first strip forming the bus bar is cut to form a current collector with the two strips 61 ', 62' on the left side of the figure.

  The top electrodes 5a to 5c, 5'a to 5'c are also divided into six. The first two upper upper surface electrode portions 5a, 5b (on the upper left in the figure) extend to the right and cover the left end of the third portion of the adjacent bottom electrode.

  The third upper surface electrode portion 5c extends toward the right side, covers the left end portion of the remaining bottom surface electrode portion, and is electrically connected to the third lower electrode portion (on the right side in the figure). Covered by metal strips forming interconnect 610.

  The first two lower upper surface electrode portions 5′a, 5′b (lower left in the figure) extend toward the right side, and the left end of the third lower portion of the adjacent bottom electrode is It is covered.

  FIG. 7 shows a schematic cross-sectional view of an organic light emitting device 10 used for different illumination.

This element 10 first comprises a flat transparent substrate, preferably a glass sheet 1 preferably formed from a thick glass having a visible absorption coefficient of 2.5 m ⁻¹ or less, for example a thickness of 4 mm or 6 mm. . It is preferred to select a particularly transparent soda-lime-glass having an absorption coefficient in the visible of less than 0.7 m ⁻¹ . The glass sheet 1 has first and second parallel main surfaces 12 and 11 and an end surface 13. The element is closed at its lower part by a cover (not shown here).

The OLED type light emitting element 10 includes ZnO: Al (20 nm) / Ag (12 nm) / Ti (1 nm) / ZnO: Al on a 25 nm Si ₃ N ₄ base layer disposed on the first main surface 11. It includes an OLED system 4 disposed on a bottom electrode of the type (20 nm) / ITO (20 nm). First direct light areas 71 and 72 are defined on both sides of the glass plate 1.

  On the surface facing the substrate 1 from the OLED system 4, the first direct light region 71 covers the central portion of the first main surface 12. The second direct light region 72 on the same plane as the OLED system 4 extends over the entire second major surface 11.

  The characteristic of the element 10 is that the luminance L1 of the first direct light region 71 is preferably greater than the luminance L2 of the second direct light region 72 (as symbolically indicated by the thick arrow F1 and the thin arrow F2). Adapted to be large.

In order to have L1 greater than L2, the element 10 therefore emits primarily through the bottom electrode. For visual comfort, for example, L1 is selected to be equal to approximately 1000 cd / m ² and L2 is selected to be equal to approximately 500 cd / m ² .

  Element 10 is also a radiation source guided in the thickness of glass 1 by total internal reflection. The guided radiation is extracted from the end of the first surface 11 using, for example, a diffusion layer 7 mainly composed of inorganic scattering particles dispersed in an inorganic binder. Accordingly, a third light region 73 that forms a surrounding light emitting frame is defined. As a modification, the diffusion layer 7 forms only the horizontal band or only the surrounding vertical band.

  In order to facilitate the extraction of guided radiation, each of the ends forming the end face 13 has an outer angle of more than 80 ° with the second major surface 11 associated with the light source 10, eg a metallic silver or copper layer The mirror 14 is included.

  The element 10 can be intended for buildings as a lighting window, lighting door, greenhouse wall, or glass roof, or vehicle side window or lighting roof. The second surface 12 is the inner surface (the most illuminated surface).

  When the element 10 is illuminated, the direct light areas 71, 72 can protect the privacy of people inside the room or vehicle compartment at night or in dark environments. In order to do this, all that is required is that the luminous flux transmitted by the glazing unit is at least equal to that reflected back through the room.

  The element 10 can form a double glazing unit and is preferably arranged in an internal gas-filled space between the glass 1 and any thinner additional glass plate.

  The element 10 thus designed can also function as an illuminated transparent shelf, illuminated refrigerator shelf, illuminated transparent partition between two rooms, or an aquarium wall. Therefore, the characteristics of the element 10 can be adapted so that the luminance L1 of the first direct light region 71 is substantially equal to the luminance L2 of the second direct light region 72.

  The light areas 71 and 72 are uniform. As a variant, the device 10 can also be discontinuous and / or have at least one direct light region forming a design, logo or display.

Additional functions As already mentioned, it may be sensible to make the second side of the support substrate 1 (on the side facing away from the organic light emitting system) functional.

  Thus, for example, to allow the substrate to remain as clean as possible regardless of environmental attacks, i.e. with the aim of maintaining the surface nature and appearance for a long time, in particular the surface of the substrate In particular, cleaning is performed by continuously removing dirt, particularly fingerprints and dirt derived from organic substances such as volatile organic substances in the atmosphere, or even dirt of sweat and dirt type, as it is assembled. A thin layer is deposited on the surface with the intention of giving them certain properties, such as allowing further spacing.

  Here, it is known that there are certain semiconductor materials based on metal oxides that make it possible to initiate radical reactions that cause oxidation of organic substances under the influence of radiation of an appropriate wavelength. That is, these materials are commonly referred to as “photocatalyst” or “photoreactive” materials.

  In the field of substrates having a glazing function, it is known to use a photocatalytic film on the substrate which has a significant “stain-proof” effect and can be produced on an industrial scale. These photocatalytic films are generally crystallized essentially in the form of anatase or anatase / rutile, in particular in the form of particles having a size of several (3 or 4) nm to 100 nm, preferably about 50 nm. Crystalline titanium oxide incorporated at least partially within the film.

  This is because titanium oxide is one of the semiconductors that degrades organic matter deposited on their surfaces under the action of light in the visible or ultraviolet range.

Thus, according to a first exemplary embodiment, the film having photocatalytic properties results from a solution based on TiO ₂ nanoparticles and mesoporous silica (SiO ₂ ) binder.

According to a second exemplary embodiment, the film having photocatalytic properties results from a solution based on TiO ₂ nanoparticles and unstructured silica (SiO ₂ ) binder.

  Furthermore, regardless of the photocatalytic film embodiment for the titanium oxide particles, they have been shown to be even more effective than amorphous titanium oxide in terms of photocatalytic properties, so that they at least partially incorporate crystalline titanium oxide. Selected to be the main component. Preferably, the oxide is crystallized in the anatase form, the rutile form or the anatase / rutile mixture.

  The film is produced such that the crystalline titanium oxide it contains is in the form of “crystallites”, ie single crystals, having an average size of 0.5 nm to 100 nm, preferably 3 nm to 60 nm. The reason for this range of dimensions is that titanium oxide appears to have an optimal photocatalytic effect, probably because crystallites of this size produce a large active surface area.

Films with photocatalytic properties are also aside from titanium oxide, for example silicon oxide (or a mixture of oxides), titanium oxide, tin oxide, zirconium oxide or aluminum oxide, in particular amorphous or partially crystalline It may contain at least one other type of inorganic material in the form of a quality oxide. This inorganic material also has a predetermined photocatalytic effect by itself when it has amorphous or partially crystalline titanium oxide, although it is small compared to that of crystalline TiO _2. The photocatalytic effect of titanium oxide can be shared.

  Increasing the number of charge carriers by doping the titanium oxide crystal lattice by inserting at least one of the metal elements niobium, tantalum, iron, bismuth, cobalt, nickel, copper, ruthenium, cerium, molybdenum into it It is also possible.

  This dope can also be performed by doping just the surface of the titanium oxide or the entire film, the surface dope is performed by coating at least part of the film with a layer of metal oxide or metal salt, Is selected from iron, copper, ruthenium, cerium, molybdenum, vanadium, and bismuth.

  Finally, the photocatalytic effect is achieved by coating at least a portion of titanium oxide or a film incorporating it with a noble metal in the form of a thin platinum, rhodium or silver layer and / or Or it can be increased by increasing the speed.

  Films with photocatalytic properties also have a pronounced hydrophilic and / or oleophilic outer surface, especially when the binder is an inorganic binder. This has two unimportant effects. That is, hydrophilicity allows for complete wetting by water that can be deposited on the film, thus making cleaning easier.

  Along with hydrophilicity, the film also allows “wetting” of organic soil that tends to deposit on the film in the form of a continuous layer that is less visible than highly localized “dirt”, as in water. Can exhibit lipophilicity. Therefore, the “organic stain prevention” effect is obtained as occurring in the following two steps. That is, as soon as it is deposited on the film, the dirt is already almost invisible. Gradually, the soil disappears due to radical decomposition initiated by the photocatalyst.

  The thickness of the film can vary between a few nanometers and a few microns, typically between 50 nm and 10 μm.

Indeed, the choice of thickness can be determined by various parameters, in particular the intended use of the substrate, or the size of the TiO ₂ crystallites in the film. The film may also be selected to have a relatively smooth surface. This is because low surface roughness is advantageous if larger active photocatalytic regions can be produced. However, too much roughness can be detrimental by promoting soil accumulation and deposition.

  According to another variant, the functionality imparted to the other surface of the substrate can be formed by an antireflection film.

Given below are the preferred range of geometric thicknesses and indices of the four multilayer anti-reflective coating layers. This coating is designated A:
-N ₁ and / or n ₃ is close to 2.00 to 2.30, in particular 2.15 to 2.25, preferably 2.20.
-N ₂ and / or _{n 4} are 1.65 from 1.35.
-E ₁ is from 5 nm to 50 nm, in particular from 10 nm to 30 nm, or from 15 nm to 25 nm.
-E ₂ is 5 nm to 50 nm, in particular 35 nm or 30 nm or less, in particular 10 nm to 35 nm.
-E ₃ is, 180 nm from 40 nm, preferably 150nm from 45 nm.
-E ₄ is 45 nm to 110 nm, preferably 70 nm to 105 nm.

  The most suitable material for forming the anti-reflective multilayer coating A, ie the first and / or third layer of the high index, is based on mixed silicon nitride-zirconium or a mixture of these nitrides. . As a variant, these high index layers are based on mixed silicon nitride-tantalum or a mixture of these nitrides. All of these materials may be optionally doped to improve their chemical and / or mechanical and / or electrical resistance properties.

The most suitable material for forming the multilayer coating A, ie the second and / or fourth layer of the low index, is based on silicon oxide, silicon oxynitride and / or silicon oxycarbide Alternatively, the main component is mixed silicon oxide-aluminum. Such mixed oxides tend to have better durability, in particular chemical durability, than pure SiO ₂ (an example of which is given in EP 791,562). The ratio of each of the two oxides can be adjusted to improve the expected durability without unduly increasing the refractive index of the layer.

A preferred embodiment of this anti-reflective multilayer coating is in the form of substrate / Si ₃ N ₄ / SiO ₂ / Si ₃ N ₄ / SiO ₂ .

  It goes without saying that the present invention is equally applicable to systems using light emitting systems other than those described in the examples.

Claims (26)

A substrate (1) for an organic light emitting device (10, 10 ') that supports a multilayer electrode (3) called a bottom electrode on a first major surface (11), the electrodes being continuously
A layer called an adhesion layer (31) mainly composed of metal oxide and / or metal nitride;
A metallic functional layer (32) based on silver having intrinsic conductivity properties and a thickness of 3 to 20 nm ;
A thin blocking layer (32 ');
A film (33, 34) including a coating layer formed of a dielectric material (34) mainly composed of a metal oxide that forms a work function adjusting layer;
Thin blocking layer (32 '), the functional layer (32) Ri directly above the near,
A thin blocking layer
At least one optionally oxidized, selected from the group consisting of Ti, V, Mn, Fe, Co, Cu, Zn, Zr, Hf, Al, Nb, Ni, Cr, Mo, Ta, and W One of the metal as a main component, the thin metallic blocking layer having a thickness of less than 5 nm, and sub-stoichiometric metal oxides, sub-stoichiometric metal oxynitride, or a sub-stoichiometric metal nitride A layer having a thickness of 10 nm or less as a main component , wherein the metal is Ti, V, Mn, Fe, Co, Cu, Zn, Zr, Hf, Al, Nb, Ni, Cr, Mo, Ta, and Substrate (1), characterized in that it comprises at least one of the layers selected from at least one of W. Thin blocking layer (32 ') the metal is niobium, tantalum, titanium, chromium, or is selected from nickel, or a thin blocking layer (32') alloy is obtained from at least two of said metal The substrate (1) according to claim 1, characterized in that it is a layer of The covering layer (34) is
Optionally, Sb-doped tin oxide or zinc oxide doped with Al, Ga, optionally mixed oxide, in particular mixed indium tin oxide, mixed indium zinc oxide, mixed zinc tin or other indium oxide, zinc oxide, oxidation Mixed and / or doped and / or substoichiometric conducting oxides on surfaces selected from tin, and / or
Substoichiometric oxide selected from molybdenum oxide, nickel oxide, aluminum oxide, titanium oxide, zirconium oxide, tantalum oxide, silicon oxide, silver oxide, gold oxide, platinum oxide, palladium oxide, optionally, preferably 10 nm The substrate according to claim 1 or 2, characterized in that it is based on at least one of the metal oxides of a doped or mixed substoichiometric oxide coating layer having the following thickness: 1).   A film (33, 34) is formed of indium oxide, zinc oxide, tin oxide, aluminum oxide, titanium oxide, zirconium oxide, tantalum oxide, silicon oxide between the thin blocking layer (32 ′) and the covering layer (34). A water and / or oxygen barrier layer (33) based on at least one of the metal oxides, this layer optionally comprising Sb-doped tin oxide or zinc oxide doped with Al or Ga And / or optionally mixed oxides, in particular mixed indium tin oxide, mixed indium zinc oxide, or mixed zinc tin oxide. 4. The substrate (1) according to any one of 3 above.   The substrate (1) according to any one of claims 1 to 4, characterized in that the film (33, 34) has a thickness of 20 nm or more, preferably a metal oxide as a main component.   The adhesion layer (31) and the water and / or oxygen barrier layer (33) have the same properties, and are optionally optionally composed mainly of Al-doped zinc oxide, preferably the coating layer (34) is a mixed indium oxide. Substrate (1) according to any one of the preceding claims, characterized in that it is tin. The electrode (3) has a light transmittance _TL of 70% or more and a sheet resistance of 10Ω / □ or less for a functional layer having a thickness of 6 nm or more, preferably 5Ω / □ or less for a functional layer having a thickness of 10 nm or more. Or having a light reflectance _RL of 70% or more, or having a sheet resistance of 3Ω / □ or less, preferably 1.8Ω / □ or less for a functional layer having a thickness of 20 nm or more, A substrate (1) according to any one of the preceding claims, characterized in that it is combined with a T _L / R _L ratio of 0.1 to 0.7. Functional layer mainly composed of silver (32), A u, Pd, Al, Pt, Cu, Zn, Cd, In, Si, Zr, Mo, Ni, Cr, Mg, Mn, Co, or, in Sn 8. Substrate (1) according to any one of claims 1 to 7, characterized in that it is alloyed or doped. Functional layer containing silver as a main component thickness (32), wherein the 15nm der Turkey from 5 nm, the substrate (1) according to any one of claims 1 to 8.   Chromium oxide, indium oxide, optionally substoichiometric zinc oxide, aluminum oxide, titanium oxide, wherein the adhesion layer (31) is doped, such as tin oxide optionally doped with F or Sb, Molybdenum oxide, zirconium oxide, antimony oxide, tin oxide, tantalum oxide, silicon oxide, or doped zinc oxide, optionally mixed oxide, especially mixed indium tin oxide, mixed indium zinc oxide, or mixed zinc tin oxide Substrate (1) according to any one of claims 1 to 9, characterized in that it has at least one of the metal oxides as a main component and preferably has a thickness of 3 nm to 30 nm. The substrate (1) according to any one of claims 1 to 10, characterized in that the adhesion layer (31) contains zinc oxide as a main component and does not contain indium. Lower layer whose main component is a substoichiometric metal oxide, nitride, or oxynitride in which the electrode is in direct contact with the adhesion layer and the functional metal layer and has a thickness of 10 nm or less The substrate (1) according to any one of the preceding claims, characterized in that it comprises a thin blocking layer referred to as and / or a metal layer having a thickness of 5 nm or less. The first major surface (11) includes a base layer (2) capable of forming a barrier against alkali metal below the electrode (3), the base layer (2) is optionally preferably 10 nm. A doped layer having a thickness of 1 to 150 nm and comprising silicon oxide or silicon oxycarbide as a main component, or selected from silicon nitride, silicon oxynitride, or silicon oxycarbonitride as a main component characterized in that there, the substrate according to any one of claims 1 1 2 (1). The first main surface (11) includes a wet etching stop layer mainly composed of tin oxide between the base layer and the adhesion layer, or the etching stop layer (2) is a part of the base layer. It has some or forming the base layer, but is preferably mainly composed of silicon nitride, or, characterized in that it is mainly composed of silicon oxide or silicon oxycarbide having a tin substrate according to claim 1 3 (1). A base layer and preferably an optional wet etch stop layer (2) covers substantially all of the first major surface of the selected flat glass substrate, the adhesion layer (31), a thin optional lower blocking. The layer, the functional layer (32), the thin blocking layer (32 ') and the film (33) are etched with the same etching pattern and preferably in a single wet etching operation. the substrate according to claim 1 3 or 1 4 (1). A structure consisting of an adhesion layer, optionally a thin lower blocking layer, a functional layer, a thin blocking layer, and optionally a water and / or oxygen barrier layer is formed on any base layer and / or wet etch stop layer. It is arranged n times which is an integer above, and the structure includes a continuous layer including an adhesion layer, a functional layer, a thin blocking layer, optionally a water and / or oxygen barrier layer, and a covering layer. characterized in that it placed, substrate according to any one of claims 1 to 1 5 (1). The boundary of the coating layer (34) is in the form of a single layer of a metal of Mo, Al, Cr, or an alloy such as MoCr, or in the form of a multilayer such as MoCr / Al / MoCr, preferably the metal current supply strips (61, 61 ', 62') having a thickness of 10μm from 0.5μm characterized in that it placed a according to any one of claims 1 1 6 Substrate (1). The substrate according to any one of claims 1 to 17 , characterized in that the substrate is flat and is formed from soda-lime-silicon glass (1), preferably transparent or specially transparent glass. Substrate (1). The second main surface (12) is selected from an antireflection multilayer, anti-fogging or antifouling layer, UV filter, in particular a titanium oxide layer, a phosphor layer, a mirror layer, and a light extraction scattering region (73). The substrate (1) according to any one of claims 1 to 18 , characterized in that it comprises a functional film. Acid etching of a substrate (1), preferably a multilayer electrode (3) on a glass substrate, preferably comprising an etching stop layer mainly comprising silicon nitride and an electrode referred to as a bottom electrode on the etch stop layer. A process, wherein the electrode is
An adhesion layer formed from a doped or undoped metal oxide selected from zinc oxide, mixed tin oxide zinc, mixed indium tin oxide, or mixed indium zinc oxide;
Optionally, directly below the functional layer, including a metal layer having a thickness of 5 nm or less, or a layer having a thickness of 10 nm or less mainly composed of a substoichiometric metal oxide, metal oxynitride, or metal nitride. A thin lower blocking layer at
A doped or undoped metal functional layer having intrinsic conductivity characteristics with a thickness of 3 to 20 nm based on silver;
At least one optionally oxidized, selected from the group consisting of Ti, V, Mn, Fe, Co, Cu, Zn, Zr, Hf, Al, Nb, Ni, Cr, Mo, Ta, and W One of the metal as a main component, has a thin metal blocking layer,及beauty, 10 nm or less in thickness composed mainly of substoichiometric metal oxide or metal oxynitride, or metal nitride having a thickness of less than 5nm The metal is selected from at least one of Ti, V, Mn, Fe, Co, Cu, Zn, Zr, Hf, Al, Nb, Ni, Cr, Mo, Ta, and W A thin blocking layer directly over the metal functional layer, including at least one of the formed layers;
Optionally a doped or undoped metal oxide barrier layer selected from zinc oxide, mixed tin zinc oxide, or mixed indium zinc oxide;
A coating layer optionally formed from a mixed conductive oxide selected from indium oxide, zinc oxide, and tin oxide, and / or molybdenum oxide, nickel oxide, aluminum oxide, titanium oxide, zirconium oxide, tantalum oxide, A coating layer having a thickness of 10 nm or less formed from silicon oxide or a substoichiometric oxide selected from silver oxide, gold oxide, platinum oxide, or palladium oxide,
Etching is performed in one step using an acid solution selected from pure nitric acid HNO ₃ or nitric acid mixed with HCl HCl or hydrochloric acid mixed with pure hydrochloric acid or ferric chloride FeCl _3. Acid etching process of electrode (3). Etching, preferably, Mo, Al, a metal of C r, or in the form of single-layer mainly composed of one of the alloys such as MoC r, or, is a multi-layer form, such as MoCr / Al / MoCr 20. Process for etching a multilayer electrode (3) according to claim 19, characterized in that it is carried out in the presence of at least one metal current supply strip. An organic light emitting device (10, 10 ') comprising at least one substrate having a bottom electrode according to any one of claims 1 to 19 , in particular a glass substrate, referred to as a bottom electrode and a so-called top electrode. An organic light emitting device (10, 10 ') comprising at least one organic light emitting layer disposed between them. Element, a single glazing unit, double glazing unit, or, characterized in that it is a laminated glazing unit, an organic light emitting device according to claim 2 2 (10, 10 '). Featuring a plurality of adjacent organic light emitting systems, each emitting white light, or emitting red, green and blue light by a series of three systems, connected in series to, organic light emitting device according to claim 2 2, or 2 3 (10, 10 '). Forming one or more reflective and / or transparent light emitting surfaces, in particular lighting, decoration, or building systems, or display display panels, for example of the drawing, logo or alphanumeric display type, where the system is uniform light or in particular characterized in that to create a different lighting area by extracting the light guided glass substrate, an organic light-emitting device according to any one of claims 2 2 2 4 (10, 10 '). For outdoor lighting glazing, interior lighting partitions, or lighting glazing doors (or parts of doors), especially for buildings such as sliding doors,
Intended for transport vehicles such as light-emitting roofs, light-emitting side windows (or parts of windows), land-based, water-borne or air-borne interior light partitions,
For bus shelter panels, display counter walls, jewelry display stands or store windows, greenhouse walls, or lighting tiles for cities or specialized equipment.
For indoor equipment such as shelves or display cabinet elements, display cabinet facades, lighting tiles, ceilings, lighting refrigerator shelves, aquarium walls, etc.
Targeted for electronic devices, especially for display screens, optionally dual screens such as television screens or computer screens, touch-sensitive screen backlighting,
In particular, the bathroom wall or a kitchen worktop, or, characterized in that an illumination mirror to illuminate the ceiling, organic light-emitting device according to any one of claims 2 2 2 5 (10, 10 ').

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