CN109950424B - OLED thin film packaging layer and preparation method thereof - Google Patents
OLED thin film packaging layer and preparation method thereof Download PDFInfo
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Abstract
The invention provides an OLED filmA film packaging layer and a preparation method thereof belong to the technical field of OLED film packaging. The OLED thin film packaging layer provided by the invention comprises an organic layer, a metal oxide layer and a metal layer which are stacked; chemically, the organic layer comprises tris (8-hydroxyquinoline) aluminum, N '-diphenyl-N, N' -di (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene; the metal oxide layer comprises MoO2And MoO3Of WO or WO2And WO3A mixture of (a); the metal layer comprises one or more of aluminum, silver, zinc, nickel and magnesium. The metal oxide layer provided by the invention achieves the protection effect by absorbing water and oxygen permeating into the OLED device, thereby greatly prolonging the service life of the OLED device.
Description
Technical Field
The invention relates to the technical field of OLED (organic light emitting diode) thin film packaging, in particular to an OLED thin film packaging layer and a preparation method thereof.
Background
The basic structure of an OLED (organic light emitting diode) is composed of a thin and transparent Indium Tin Oxide (ITO) with semiconductor properties, which is connected to a positive power supply electrode, and another metal cathode. The whole OLED basic structure layer comprises: a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Emission Layer (EL), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL). When the power supply voltage is in proper voltage, the positive hole and the negative charge are combined in the luminous layer to produce light, and according to the different formulas, the three primary colors of red, green and blue are produced to form basic color.
After the OLED device is prepared, the OLED device is sensitive to oxygen and water, and can be quickly degraded or even cannot work after being exposed in the air for a long time, so that the OLED device needs to be packaged, the water and oxygen can be isolated from the OLED device, and the service life is prolonged. The existing film encapsulation technology is generally based on an aluminum oxide or organic-inorganic multilayer film structure, and only can temporarily play a role in isolating water and oxygen at the beginning of use, but the encapsulation film can lose the isolation effect along with the prolonging of the use time, so that the actual service life of the OLED cannot be prolonged by the film encapsulation.
Disclosure of Invention
In view of this, the present invention provides an OLED thin film encapsulation layer and a method for manufacturing the same. The OLED thin film packaging layer provided by the invention can greatly prolong the service life of an OLED device.
In order to achieve the above purpose, the invention provides the following technical scheme:
the invention provides an OLED thin film packaging layer which comprises an organic layer, a metal oxide layer and a metal layer which are stacked in a chemical composition manner; chemically, the organic layer comprises tris (8-hydroxyquinoline) aluminum, N '-diphenyl-N, N' -di (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene; the metal oxide layer comprises MoO2And MoO3Of WO or WO2And WO3A mixture of (a); the metal layer comprises one or more of aluminum, silver, zinc, nickel and magnesium.
Preferably, the form of the aluminum is an elemental aluminum or an aluminum alloy, the form of the silver is an elemental silver or a silver alloy, the form of the zinc is elemental zinc and a zinc alloy, the form of the nickel is elemental nickel or a nickel alloy, and the form of the magnesium is elemental magnesium or a magnesium alloy.
Preferably, the organic layer, the metal oxide layer and the metal layer in the OLED thin film encapsulation layer are arranged periodically.
Preferably, the number of the periodic arrangement cycles is 1-8.
Preferably, a calcium layer is further included between the organic layer and the metal oxide layer.
Preferably, the thickness of the calcium layer is 50-200 nm.
Preferably, the thicknesses of the organic layer, the metal oxide layer and the metal layer are independently 50 to 100 nm.
The invention also provides a preparation method of the OLED thin film packaging layer in the technical scheme, which comprises the following steps:
and sequentially evaporating an organic layer, a metal oxide layer and a metal layer on the OLED device to obtain the OLED thin film packaging layer.
Preferably, the current of the evaporation is 30-100A.
Preferably, the evaporation rate of the metal oxide in the evaporation is
The invention provides an OLED thin film packaging layer, which comprises an organic layer, a metal oxide layer and a metal layer which are stacked; chemically, the organic layer comprises tris (8-hydroxyquinoline) aluminum, N '-diphenyl-N, N' -di (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene; the metal oxide layer comprises MoO2And MoO3Of WO or WO2And WO3A mixture of (a); the metal layer comprises one or more of aluminum, silver, zinc, nickel and magnesium. The metal oxide layer in the film packaging layer is a mixture of tetravalent metal oxide and hexavalent metal oxide, and the tetravalent metal oxide can absorb oxygen to react to form hexavalent metal oxide so as to achieve the effect of absorbing the oxygen permeated into a device; when encountering water, the hexavalent metal oxide can slowly react to generate corresponding metal acid, so that the effect of absorbing water infiltrated into the device is achieved. The metal oxide layer provided by the invention achieves the protection effect by absorbing water and oxygen permeating into the OLED device, so that the service life of the OLED device is greatly prolonged; the organic layer can function as an organic buffer layer; the metal layer can react with the metal acid generated by the reaction of the hexavalent metal oxide with water to generate stable metal acid salt, so that the stability of a system is promoted, and the service life of an OLED device is prolonged.
The results of the examples show that when the OLED device is lighted by the OLED film packaging layer of the invention in a relatively long time, the voltage and brightness of the OLED device under the same current do not change obviously, while when the OLED device is lighted by the OLED film packaging layer of the comparative example in a short time, the voltage and brightness of the OLED device under the same current change obviously, the voltage is increased greatly along with the increase of time, and the brightness is decreased greatly along with the increase of time, thus proving that the service life of the OLED device can be prolonged greatly by the OLED film packaging layer of the invention.
Drawings
FIG. 1 is a complete schematic diagram of an OLED device made in example 2 of the present invention;
FIG. 2 is a graph showing the luminance of an OLED device with time after the OLED thin film encapsulation layers prepared in example 1 and comparative example 1 of the present invention are applied to the OLED device;
FIG. 3 is a graph showing the voltage of an OLED device according to the time course after the OLED thin film encapsulation layers prepared in example 1 and comparative example 1 of the present invention are applied to the OLED device;
FIG. 4 is a graph showing the luminance of an OLED device with time after the OLED thin film encapsulation layers prepared in examples 2 and 3 of the present invention are applied to the OLED device;
FIG. 5 is a graph showing the voltage of an OLED device according to the present invention after the OLED thin film encapsulation layers prepared in examples 2 and 3 are applied to the OLED device.
Detailed Description
The invention provides an OLED thin film packaging layer, which comprises an organic layer, a metal oxide layer and a metal layer which are stacked; chemically, the organic layer comprises tris (8-hydroxyquinoline) aluminum, N '-diphenyl-N, N' -di (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene; the metal oxide layer comprises MoO2And MoO3Of WO or WO2And WO3A mixture of (a); the metal layer comprises one or more of aluminum, silver, zinc, nickel and magnesium.
In the invention, the OLED thin film encapsulation layer comprises an organic layer, a metal oxide layer and a metal layer which are stacked. In the present invention, the organic layer includes tris (8-hydroxyquinoline) aluminum (Alq3), N '-diphenyl-N, N' -di (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (NPB), or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene (TPBi). In the present invention, the thickness of the organic material layer is preferably 50 to 100nm, and more preferably 50 to 70 nm. The source of the organic layer is not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used. In the present invention, the organic layer can function as an organic buffer layer.
In the present invention, the metal oxide layer includes MoO2And MoO3Of WO or WO2And WO3Preferably comprising (MoO)2And WO3Mixture of) or (MoO)3And WO2Mixtures of (a) and (b). In the present invention, the thickness of the metal oxide layer is preferably 50 to 100nm, and more preferably 50 to 70 nm.
In the present invention, the metal OXIDE includes both tetravalent and hexavalent metal OXIDEs, the source of which is preferably purchased from SIGMA, wherein the molybdenum OXIDE is preferably MOLYBDENUM (VI) OXIDE. In the invention, the metal oxide is a low-temperature easily-deposited metal compound and is a mixture of tetravalent and hexavalent metal oxides, wherein the tetravalent metal oxide can absorb oxygen to react to form the hexavalent metal oxide, so that the effect of absorbing the oxygen permeated into the device is achieved; when encountering water, the hexavalent metallic oxide slowly reacts to generate corresponding metallic acid, so that the effect of absorbing water permeating into the device is achieved, water and oxygen permeating into the OLED device are absorbed, the protection effect is achieved, and the service life of the OLED device is greatly prolonged.
In the invention, the metal layer comprises one or more of aluminum, silver, zinc, nickel and magnesium; the form of the aluminum is preferably simple substance aluminum or aluminum alloy, the form of the silver is preferably simple substance silver or silver alloy, the form of the zinc is preferably simple substance zinc or zinc alloy, the form of the nickel is preferably simple substance nickel or nickel alloy, and the form of the magnesium is preferably simple substance magnesium or magnesium alloy. The invention has no special requirements on the specific compositions of the silver alloy, the zinc alloy, the nickel alloy and the magnesium alloy, and the corresponding metal alloy which is well known by the technical personnel in the field can be adopted. In the present invention, the thickness of the metal layer is preferably 50 to 100nm, and more preferably 70 to 100 nm. The source of the metal layer is not particularly limited in the present invention, and may be a commercially available product known to those skilled in the art or may be prepared by a conventional technique. In the invention, the metal layer can react with the generated metal acid to generate stable metal acid salt, thereby promoting the stability of the system and prolonging the service life of the OLED device.
In the invention, the organic material layer, the metal oxide layer and the metal layer in the OLED thin film packaging layer are preferably arranged periodically, and the number of the periodic arrangement periods is preferably 1-8, and more preferably 2-3. Specifically, when the periodicity is 2, the arrangement is in the form of an organic layer-a metal oxide layer-a metal layer-an organic layer-a metal oxide layer-a metal layer, and so on when the periodicity is other. In the invention, the organic layer, the metal oxide layer and the metal layer are periodically superposed, and the periodic increase is more favorable for absorbing external water and oxygen, thereby improving the packaging effect and prolonging the service life of the OLED device.
In the invention, a calcium layer is preferably further included between the organic layer and the metal oxide layer, and the thickness of the calcium layer is preferably 50-200 nm. In the present invention, the calcium layer preferably includes elemental calcium. The source of the calcium layer is not particularly limited in the present invention, and a conventional product well known to those skilled in the art may be used. In the invention, the calcium layer can absorb water and oxygen permeating into the OLED device, thereby prolonging the service life of the OLED device. In the invention, when a calcium layer is included between the organic layer and the metal oxide layer, the organic layer, the calcium layer, the metal oxide layer and the metal layer in the OLED thin film encapsulation layer are preferably arranged periodically, and the number of periods of the periodic arrangement is preferably 1-8, and more preferably 2-3. Specifically, when the periodicity is 2, the arrangement is in the form of an organic layer-a calcium layer-a metal oxide layer-a metal layer-an organic layer-a calcium layer-a metal oxide layer-a metal layer, and so on when the periodicity is other.
The invention also provides a preparation method of the OLED film packaging layer, which comprises the following steps: and sequentially evaporating an organic layer, a metal oxide layer and a metal layer on the OLED device to obtain the OLED thin film packaging layer.
The invention has no special requirements on the source of the OLED device, and can be packaged at will; either by OLED devices known to those skilled in the art or by themselves. When self-prepared, the process for preparing the OLED device preferably comprises the steps of:
plating an ITO film on a glass substrate by magnetron sputtering, and then etching to obtain an ITO film glass substrate;
cleaning the ITO film glass substrate, and then drying and irradiating by ultraviolet to obtain a clean ITO film glass substrate;
and putting the material to be evaporated on each boat source or crucible source of the evaporation chamber, and putting the clean ITO substrate into the evaporation chamber for evaporation to obtain the OLED device.
According to the invention, an ITO film is plated on a glass substrate through magnetron sputtering, and then the ITO film glass substrate is obtained through etching.
In the present invention, the pressure of the magnetron sputtering is preferably less than 2.0X 10-5mbar, the thickness of the ITO film is preferably 150 nm.
In the present invention, the etching is preferably performed by using a photolithography machine. The method preferably comprises the steps of rinsing the etched glass substrate in a developing solution for 2-3 times, soaking the glass substrate in aqua regia for 5-10 minutes, and then putting the glass substrate in an acetone solution for cleaning.
The invention has no special requirements on the structure of the etched glass substrate, and the etching is carried out according to the pre-designed structure.
After the ITO film glass substrate is obtained, the ITO film glass substrate is cleaned, and then the clean ITO film glass substrate is obtained through drying and ultraviolet irradiation.
In the invention, the cleaning agent for cleaning is preferably detergent and/or cleaning powder. The source of the cleaning agent is not particularly limited in the present invention, and products well known to those skilled in the art can be used. The dosage proportion of the cleaning agent is not specially limited, and the ITO film glass substrate can be cleaned.
In the present invention, the washing is preferably carried out under ultrasonic conditions, each time with a new detergent. The power of the ultrasonic wave is preferably 800-1000W, the time of the ultrasonic wave is preferably 60-120 min, and the frequency of the ultrasonic wave is preferably 3-4.
The drying temperature and time are not specially limited, and the ITO film glass substrate can be dried by adopting the conventional technical means in the field.
In the invention, the wavelength of the ultraviolet radiation is preferably 185-254 nm, and the time of the ultraviolet radiation is preferably 15-20 min.
After the clean ITO film glass substrate is obtained, the material to be evaporated is placed on each boat source or crucible source of the evaporation chamber, and the clean ITO substrate is placed in the evaporation chamber for evaporation, so that the OLED device is obtained.
In the present invention, the boat source or the crucible source is preferably preheated before the evaporation. In the invention, the preheating temperature is preferably 100 ℃, and the preheating time is preferably 1-3 min.
In the present invention, the pressure of the evaporation is preferably less than 10-5mbar。
In the invention, the evaporated material preferably comprises materials corresponding to an anode glass substrate, a hole injection layer-1, a hole transport layer-1, a luminescent layer, an electron transport layer-2, an electron injection layer-2 and a cathode component in sequence, wherein the hole injection layer-1, the hole transport layer-1, the luminescent layer, the electron transport layer-2, the electron injection layer-2 are organic matters, and the cathode is a metal layer.
In the present invention, when the material to be deposited is an organic layer, the current for deposition is preferably 20A, and the evaporation rate for deposition is preferably 20A
When the evaporated material is a metal layer, the evaporation rate of the evaporation is preferably set to be higher than that of the metal layer
After the OLED device is obtained, the OLED thin film packaging layer is obtained by sequentially evaporating an organic layer, a metal oxide layer and a metal layer on the OLED device. The invention preferably evaporates and plates organic matter layer, metal oxide layer and metal layer on the negative pole of the OLED device sequentially.
In the present invention, when depositing an organic material layer, the current for deposition is selected to be different depending on the organic material, specifically, the current for deposition is 40A for Alq3 layer, and the evaporation rate of the deposition is preferably 40A
When the metal oxide layer is evaporated, the current of evaporation is preferably 80-100A, and the evaporation rate of evaporation is preferably 80-100A
When the metal layer is evaporated, different evaporation currents are selected according to different metals, specifically, the evaporation current of aluminum is 30A, the evaporation current of silver is 110-120A, the evaporation current of zinc is 70-90A, and the evaporation rate of evaporation is preferably selected
When a calcium layer is included, the calcium layer is preferably evaporated between the organic layer and the metal oxide layer.
In the present invention, when the calcium layer is evaporated, the current for the evaporation is preferably 70A, and the rate of evaporation is preferably 70A
When the organic substance layer, the metal oxide layer and the metal layer or the organic substance layer, the calcium layer, the metal oxide layer and the metal layer are arranged periodically, the cyclic vapor deposition is carried out in sequence according to the vapor deposition conditions of different substance layers according to the technical scheme.
According to the invention, the OLED thin film packaging layer is prepared on the surface of the OLED device, so that the OLED device is packaged, and the service life of the OLED device is prolonged.
In order to further illustrate the present invention, the following examples are provided to describe the OLED thin film encapsulation layer and the method for preparing the same in detail, but they should not be construed as limiting the scope of the present invention.
Example 1
Preparing an OLED device:
below 2.0X 10-5Plating an ITO film (150nm) on a glass substrate by magnetron sputtering under the base pressure of mbar, and then etching to obtain an ITO film glass substrate with a corresponding luminous pattern;
pouring detergent, cleaning powder and deionized water on the ITO film glass substrate, carrying out ultrasound in an ultrasonic machine for 3 times, each time for 90 minutes, the power is 900W, each time ultrasound is replaced by new deionized water, acetone and isopropanol, repeating the steps, drying, and irradiating for 20min at the ultraviolet wavelength of 185nm to obtain a clean ITO film glass substrate;
putting materials to be evaporated on each boat source or crucible source of an evaporation chamber, and putting a clean ITO substrate into the evaporation chamber for evaporation to obtain the OLED device;
after the deposition of the device, an Alq3 layer (50nm) was deposited by vapor deposition at a current of 40A, a Ca layer (50nm) was deposited at a current of 70A, and MoO was deposited at a current of 90A2And MoO3The mixture layer (50nm) of (2) is formed so that the evaporation rate of the vapor deposition is set to be
An Al layer (50nm) was deposited at a current of 30A to obtain Alq3/Ca/MoOxa/Al encapsulation film of which MoOxRepresents MoO2And MoO3The mixture layer of (2).
Example 2
The preparation method of the OLED device is the same as that of the OLED device in the embodiment 1, and the evaporated OLED thin film packaging layer material is different. In this example, Alq3 and MoO were sequentially deposited by evaporationxAnd Al to give Alq3/MoOxa/Al encapsulation film.
Example 3
OLThe preparation method of the ED device is the same as that of the ED device in the embodiment 1, and the evaporated OLED thin film packaging layer material is different. In this example, Alq3 and MoO were sequentially deposited by cyclic vapor depositionxAnd aluminum, and vapor deposition was carried out continuously for 3 cycles to obtain Alq3/MoOxPeriodic encapsulation films of/Al, in which MoOxRepresents MoO2And MoO3The mixture layer of (2).
Example 4
The preparation method of the OLED device is the same as that of the OLED device in the embodiment 1, and the evaporated OLED thin film packaging layer material is different. In this example, Alq3 and WO were sequentially deposited by evaporationxAnd Al to give Alq3/WOxA film for encapsulation of Al, in which WOxRepresents WO2And WO3The mixture layer of (2).
Through the detection of brightness and voltage, the brightness of the OLED prepared by the embodiment is 2177cd/m within 0-180 h2Becomes 1284cd/m2The voltage changed from 6.74V to 9.97V.
Example 5
The preparation method of the OLED device is the same as that of the OLED device in the embodiment 1, and the evaporated OLED thin film packaging layer material is different. In this example, NPB, WOx and Mg were sequentially evaporated to obtain NPB/WOxa/Mg encapsulation film.
Through the detection of brightness and voltage, the brightness of the OLED prepared by the embodiment is 2103cd/m within 0-180 h2Becomes 1000cd/m2The voltage was changed from 6.54V to 10.01V.
Example 6
The preparation method of the OLED device is the same as that of the OLED device in the embodiment 1, and the evaporated OLED thin film packaging layer material is different. In this example, TPBi and MoO were sequentially deposited by evaporationxAnd Zn to obtain TPBi/MoOx/Zn encapsulation film of MoOxRepresents MoO2And MoO3The mixture layer of (2).
Through detection of brightness and voltage, the brightness of the OLED prepared by the embodiment is 2080cd/m within 0-180 h2Becomes 1090cd/m2The voltage changed from 6.24V to 9.80V.
Example 7
The preparation method of the OLED device is the same as that of the OLED device in the embodiment 1, and the evaporated OLED thin film packaging layer material is different. In this example, TPBi and MoO were sequentially deposited by evaporationxAnd zinc alloy to obtain TPBi/MoOx/zinc alloy encapsulating films of MoOxRepresents MoO2And MoO3The mixture layer of (2).
Through detection of brightness and voltage, the brightness of the OLED prepared by the embodiment is 2008cd/m within 0-180 h2Becomes 1384cd/m2The voltage changed from 6.41V to 7.81V.
Example 8
The preparation method of the OLED device is the same as that of the OLED device in the embodiment 1, and the evaporated OLED thin film packaging layer material is different. In this example, NPB and WO were sequentially depositedxAnd magnesium alloy to obtain NPB/WOxAn encapsulation film of/Mg alloy, wherein WOxRepresents WO2And WO3The mixture layer of (2).
Through the detection of brightness and voltage, the brightness of the OLED prepared by the embodiment is 2130cd/m within 0-180 h2Becomes 1734cd/m2The voltage changed from 6.74V to 9.97V.
Example 9
The preparation method of the OLED device is the same as that of the OLED device in the embodiment 1, and the evaporated OLED thin film packaging layer material is different. In this example, Alq3 and WO were sequentially deposited by evaporationxAnd aluminum alloys to obtain Alq3/WOxa/Al alloy encapsulating film, in which WOxRepresents WO2And WO3The mixture layer of (2).
Through the detection of brightness and voltage, the brightness of the OLED prepared by the embodiment is from 2100cd/m within 0-180 h2Becomes 500cd/m2The voltage was changed from 6.24V to 12V.
Example 10
The preparation method of the OLED device is the same as that of the OLED device in the embodiment 1, and the evaporated OLED thin film packaging layer material is different. In this example, TPBi and WO were sequentially deposited by evaporationxAnd Al to obtain TPBi/MoOxA film for encapsulation of Al, in which WOxRepresents WO2And WO3The mixture layer of (2).
Through the detection of the brightness and the voltage, the OLED brightness 2100cd/m is obtained in the embodiment within 0-180 h2Becomes 1100cd/m2The voltage was changed from 6.24V to 10.5V.
Comparative example 1
The preparation method of the OLED device is the same as that of the OLED device in the embodiment 1, and the evaporated OLED thin film packaging layer material is different. In comparative example 1, Alq3, LiF and Al were sequentially evaporated to obtain an Alq3/LiF/Al sealing film.
FIG. 1 shows an OLED device prepared in example 2 and Alq3/MoOxSchematic diagram of/Al packaging film.
FIG. 2 is a graph showing the luminance of an OLED device according to the time course after the OLED thin film encapsulation layers prepared in example 1 and comparative example 1 are applied to the OLED device, from which: when the OLED thin film packaging layer prepared in the embodiment 1 of the invention lights the OLED device within 0-160 h, the brightness of the OLED device in the embodiment 1 is from 2150cd/m under the same current2Down to 1980cd/m2When the OLED device is lightened by the OLED film packaging layer in the comparative example 1 within 0-100 h, the brightness of the OLED device in the comparative example 1 is 2050cd/m under the same current2Down to 600cd/m2The obvious change proves that the OLED thin film packaging layer can greatly prolong the service life of an OLED device.
FIG. 3 is a graph showing the voltage of an OLED device according to the time course after the OLED thin film encapsulation layers prepared in example 1 and comparative example 1 are applied to the OLED device, from which: when the OLED device is lightened by the OLED film packaging layer prepared in the embodiment 1 in 0-160 h, the voltage of the OLED device in the embodiment 1 is increased from 6.0V to 6.3V under the same current, and when the OLED device is lightened by the OLED film packaging layer in the comparative example 1 in 0-100 h, the voltage of the OLED device in the comparative example 1 is increased from 6.6V to 13.0V under the same current, so that the voltage is obviously changed, and the service life of the OLED device can be greatly prolonged by the OLED film packaging layer.
FIG. 4 is a graph showing the luminance of OLED devices after the OLED thin film encapsulation layers prepared in examples 2 and 3 are applied to the OLED devices, and it can be seen that: when the OLED thin film packaging layer prepared in the embodiment 2 of the invention lights the OLED device within 0-160 h, the brightness of the OLED device in the embodiment 2 is from 2150cd/m under the same current2Down to 1360cd/m2When the OLED device is lightened by the OLED film packaging layer prepared in the embodiment 3 within 0-160 h, the luminance of the OLED device in the embodiment 3 is 2100cd/m under the same current2Down to 1980cd/m2Description of the periodicityThe packaging effect of the stacked packaging layers is better than that of a period of packaging layers, and the service life of the OLED device can be prolonged.
FIG. 5 is a graph showing the voltage of the OLED device as a function of time after the OLED thin film encapsulation layers prepared in examples 2 and 3 are applied to the OLED device, from which can be obtained: when the OLED device is lightened by the OLED film packaging layer prepared in the embodiment 2 within 0-160 h, the voltage of the OLED device in the embodiment 2 is increased from 6.8V to 10.0V under the same current, and when the OLED device is lightened by the OLED film packaging layer prepared in the embodiment 3 within 0-160 h, the voltage of the OLED device in the embodiment 3 is increased from 5.4V to 6.0V under the same current, so that the packaging effect of the packaging layer which is periodically overlapped is better than that of the packaging layer in one period, and the service life of the OLED device can be prolonged.
Moreover, the brightness stability of the OLED device prepared in example 1 is better than that of example 2, which shows that the addition of the calcium layer is beneficial to prolonging the service life of the OLED device.
The voltage and the brightness of the OLED device can not be obviously changed under the same current when the OLED device is lightened by the OLED thin film packaging layer disclosed by the invention in a relatively long time, and the OLED thin film packaging layer disclosed by the invention can greatly prolong the service life of the OLED device; and the calcium layer and the periodically arranged encapsulation layer can also prolong the service life of the OLED device.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner. It should be noted that, for those skilled in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be construed as the protection scope of the present invention.
Claims (10)
1. The OLED thin film encapsulation layer is characterized by comprising an organic layer, a metal oxide layer and a metal layer which are stacked; chemically, the organic layer comprises tris (8-hydroxyquinoline) aluminum, N '-diphenyl-N, N' -di (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, or 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene; the metal oxide layer coatingInclude MoO2And MoO3Of WO or WO2And WO3A mixture of (a); the metal layer comprises one or more of aluminum, silver, zinc, nickel and magnesium.
2. The OLED thin film encapsulation layer of claim 1, wherein the aluminum is in the form of elemental aluminum or aluminum alloy, the silver is in the form of elemental silver or silver alloy, the zinc is in the form of elemental zinc or zinc alloy, the nickel is in the form of elemental nickel or nickel alloy, and the magnesium is in the form of elemental magnesium or magnesium alloy.
3. The OLED thin film encapsulation layer of claim 1, wherein the organic layer, the metal oxide layer and the metal layer are periodically arranged in the OLED thin film encapsulation layer.
4. The OLED film encapsulation layer of claim 3, wherein the number of the periodic arrangement is 1-8.
5. The OLED thin film encapsulation layer of claim 1 or 3, further comprising a calcium layer between the organic layer and the metal oxide layer.
6. The OLED thin film encapsulation layer of claim 5, wherein the thickness of the calcium layer is 50-200 nm.
7. The OLED thin film encapsulation layer of claim 1, wherein the organic layer, the metal oxide layer and the metal layer independently have a thickness of 50-100 nm.
8. The preparation method of the OLED thin film encapsulation layer of any one of claims 1 to 7, characterized by comprising the following steps:
and sequentially evaporating an organic layer, a metal oxide layer and a metal layer on the OLED device to obtain the OLED thin film packaging layer.
9. The method according to claim 8, wherein the current for the evaporation is 30 to 100A.
10. The production method according to claim 8, wherein the evaporation rate of the metal oxide in the evaporation is
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| CN110429122A (en) * | 2019-08-07 | 2019-11-08 | 昆山梦显电子科技有限公司 | Silicon substrate micro display screen and preparation method thereof |
| CN110854294A (en) * | 2019-11-20 | 2020-02-28 | 上海大学 | OLED packaging method and OLED obtained through packaging |
| CN111341940A (en) * | 2020-03-18 | 2020-06-26 | 上海晶合光电科技有限公司 | OLED device packaging structure and preparation method thereof |
| CN111710801A (en) * | 2020-07-09 | 2020-09-25 | 浩物电子科技(苏州)有限公司 | Composite film packaging method of top-emitting OLED |
| CN114420864A (en) * | 2022-01-10 | 2022-04-29 | 南京迪视泰光电科技有限公司 | Packaging structure and preparation method thereof |
| CN114824240A (en) * | 2022-04-01 | 2022-07-29 | 五邑大学 | Modified molybdenum oxide and zinc ion battery based on modified molybdenum oxide |
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