JP5258786B2 - 光制御装置及び光制御システム - Google Patents
光制御装置及び光制御システム Download PDFInfo
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- JP5258786B2 JP5258786B2 JP2009542585A JP2009542585A JP5258786B2 JP 5258786 B2 JP5258786 B2 JP 5258786B2 JP 2009542585 A JP2009542585 A JP 2009542585A JP 2009542585 A JP2009542585 A JP 2009542585A JP 5258786 B2 JP5258786 B2 JP 5258786B2
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- Prior art keywords
- electro
- thin film
- light control
- optic
- optic thin
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- 239000010409 thin film Substances 0.000 claims description 86
- 239000013078 crystal Substances 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 59
- 230000005684 electric field Effects 0.000 claims description 34
- 230000000694 effects Effects 0.000 claims description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052746 lanthanum Inorganic materials 0.000 claims 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 description 51
- 238000000034 method Methods 0.000 description 25
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 229910052594 sapphire Inorganic materials 0.000 description 10
- 239000010980 sapphire Substances 0.000 description 10
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910001199 N alloy Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- PQCCZSBUXOQGIU-UHFFFAOYSA-N [La].[Pb] Chemical compound [La].[Pb] PQCCZSBUXOQGIU-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/05—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect with ferro-electric properties
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0136—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/124—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode interdigital
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Description
カッチェン(J. Thomas Cutchen)、他 著、「アプライド・オプティクス、第14巻、第8号(Applied Optics vol.14 No.8)」、1975年8月、p.1866−1873 「強誘電体メモリ先端プロセス」、第1版、株式会社サイエンスフォーラム、1999年9月13日、p.151−157
上記のように、本発明は実施の形態によって記載したが、この開示の一部をなす記述及び図面はこの発明を限定するものであると理解するべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかになるはずである。
Claims (6)
- 単結晶基板と、
前記単結晶基板上に設けられ、電気光学効果を有する電気光学薄膜と、
前記電気光学薄膜の結晶軸に沿ってそれぞれ設けられ、前記電気光学薄膜の結晶軸に沿って電界を印加する複数の電極
とを備え、
前記電極は、前記電気光学薄膜の結晶軸〈111〉に沿って電界を印加することを特徴とする光制御装置。 - 前記電気光学薄膜の主面は、(101)面であることを特徴とする請求項1に記載の光制御装置。
- 前記電気光学薄膜は、チタン酸ジルコン酸ランタン鉛であることを特徴とする請求項1又は2に記載の光制御装置。
- 単結晶基板、前記単結晶基板上に設けられた(101)面を主面とする電気光学薄膜、前記電気光学薄膜上の結晶軸に沿ってそれぞれ設けられ、前記電気光学薄膜の結晶軸に沿って電界を印加する複数の電極を有し、二次元アレイ状に配置された複数の光制御装置と、
前記電極に供給する電圧を制御するトランジスタ
とを備えることを特徴とする光制御システム。 - 前記電極は、前記電気光学薄膜の結晶軸〈111〉に沿って電界を印加することを特徴とする請求項4に記載の光制御システム。
- 前記電気光学薄膜は、チタン酸ジルコン酸ランタン鉛であることを特徴とする請求項5に記載の光制御システム。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009542585A JP5258786B2 (ja) | 2007-11-20 | 2008-11-20 | 光制御装置及び光制御システム |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007300661 | 2007-11-20 | ||
JP2007300661 | 2007-11-20 | ||
JP2009542585A JP5258786B2 (ja) | 2007-11-20 | 2008-11-20 | 光制御装置及び光制御システム |
PCT/JP2008/071115 WO2009066728A1 (ja) | 2007-11-20 | 2008-11-20 | 光制御装置、半導体ウェハ及び光制御システム |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2009066728A1 JPWO2009066728A1 (ja) | 2011-04-07 |
JP5258786B2 true JP5258786B2 (ja) | 2013-08-07 |
Family
ID=40667550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009542585A Expired - Fee Related JP5258786B2 (ja) | 2007-11-20 | 2008-11-20 | 光制御装置及び光制御システム |
Country Status (4)
Country | Link |
---|---|
US (1) | US8154786B2 (ja) |
JP (1) | JP5258786B2 (ja) |
CN (1) | CN101918882A (ja) |
WO (1) | WO2009066728A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103323968B (zh) * | 2013-05-28 | 2015-11-25 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示装置 |
US9715131B2 (en) * | 2014-09-11 | 2017-07-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated fan-out package including dielectric waveguide |
JP7343347B2 (ja) * | 2019-10-04 | 2023-09-12 | 日本碍子株式会社 | 光変調器用接合体、光変調器および光変調器用接合体の製造方法 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5665177A (en) * | 1979-11-01 | 1981-06-02 | Matsushita Electric Ind Co Ltd | Image display device |
JPS606922A (ja) * | 1983-06-24 | 1985-01-14 | Matsushita Electric Ind Co Ltd | 薄膜光制御素子 |
JPS619692A (ja) * | 1984-06-23 | 1986-01-17 | 松下電器産業株式会社 | 画像表示装置 |
JPH04166910A (ja) * | 1990-10-31 | 1992-06-12 | Fujitsu General Ltd | 固体表示装置 |
JP2001033834A (ja) * | 1999-07-16 | 2001-02-09 | Minolta Co Ltd | 光シャッタ装置 |
JP2001318353A (ja) * | 2000-05-11 | 2001-11-16 | Matsushita Electric Ind Co Ltd | 偏光変調素子、その製造方法及び表示装置 |
JP2003215516A (ja) * | 2002-01-23 | 2003-07-30 | Kyocera Corp | 光可変減衰装置 |
JP2004151400A (ja) * | 2002-10-30 | 2004-05-27 | Kyocera Corp | 偏波分散補償器 |
JP2005266638A (ja) * | 2004-03-22 | 2005-09-29 | Fujitsu Ltd | 光学素子 |
JP2005294308A (ja) * | 2004-03-31 | 2005-10-20 | Fujitsu Ltd | 強誘電体膜を含んだ電子素子とその製造方法 |
JP2006154145A (ja) * | 2004-11-26 | 2006-06-15 | Fujitsu Ltd | 光学素子及び光スイッチ |
JP2006284862A (ja) * | 2005-03-31 | 2006-10-19 | Dainippon Printing Co Ltd | 異方性光学素子の製造方法 |
JP2007183316A (ja) * | 2006-01-04 | 2007-07-19 | Precise Gauges Co Ltd | 波長変換導波路素子及びその製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US437921A (en) * | 1890-10-07 | Fly-fan | ||
NL6815909A (ja) * | 1968-11-08 | 1970-05-12 | ||
US3813142A (en) * | 1972-12-04 | 1974-05-28 | Gte Laboratories Inc | Electro-optic variable phase diffraction grating and modulator |
US4243300A (en) * | 1978-12-19 | 1981-01-06 | The United States Of America As Represented By The Secretary Of The Navy | Large aperture phased element modulator/antenna |
DE3040953C2 (de) | 1979-11-01 | 1984-03-15 | Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka | Bildanzeigeeinrichtung |
US5753300A (en) * | 1995-06-19 | 1998-05-19 | Northwestern University | Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films |
JP2002090560A (ja) * | 2000-09-13 | 2002-03-27 | Nec Corp | 光通信モジュールとその製造方法 |
US20030013219A1 (en) * | 2001-07-13 | 2003-01-16 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing electro-optic structures |
JP3640390B2 (ja) * | 2002-09-12 | 2005-04-20 | 住友大阪セメント株式会社 | 光変調器 |
JP4525006B2 (ja) * | 2003-06-25 | 2010-08-18 | パナソニック電工株式会社 | 光導波路モジュール |
JP2006133308A (ja) * | 2004-11-02 | 2006-05-25 | Fujitsu Ltd | 光学素子 |
JP2007146657A (ja) | 2005-11-24 | 2007-06-14 | Denso Corp | 燃料噴射制御装置 |
JP2007148034A (ja) * | 2005-11-28 | 2007-06-14 | Fujitsu Ltd | 電気光学素子 |
-
2008
- 2008-11-20 WO PCT/JP2008/071115 patent/WO2009066728A1/ja active Application Filing
- 2008-11-20 CN CN2008801170252A patent/CN101918882A/zh active Pending
- 2008-11-20 US US12/743,929 patent/US8154786B2/en not_active Expired - Fee Related
- 2008-11-20 JP JP2009542585A patent/JP5258786B2/ja not_active Expired - Fee Related
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5665177A (en) * | 1979-11-01 | 1981-06-02 | Matsushita Electric Ind Co Ltd | Image display device |
JPS606922A (ja) * | 1983-06-24 | 1985-01-14 | Matsushita Electric Ind Co Ltd | 薄膜光制御素子 |
JPS619692A (ja) * | 1984-06-23 | 1986-01-17 | 松下電器産業株式会社 | 画像表示装置 |
JPH04166910A (ja) * | 1990-10-31 | 1992-06-12 | Fujitsu General Ltd | 固体表示装置 |
JP2001033834A (ja) * | 1999-07-16 | 2001-02-09 | Minolta Co Ltd | 光シャッタ装置 |
JP2001318353A (ja) * | 2000-05-11 | 2001-11-16 | Matsushita Electric Ind Co Ltd | 偏光変調素子、その製造方法及び表示装置 |
JP2003215516A (ja) * | 2002-01-23 | 2003-07-30 | Kyocera Corp | 光可変減衰装置 |
JP2004151400A (ja) * | 2002-10-30 | 2004-05-27 | Kyocera Corp | 偏波分散補償器 |
JP2005266638A (ja) * | 2004-03-22 | 2005-09-29 | Fujitsu Ltd | 光学素子 |
JP2005294308A (ja) * | 2004-03-31 | 2005-10-20 | Fujitsu Ltd | 強誘電体膜を含んだ電子素子とその製造方法 |
JP2006154145A (ja) * | 2004-11-26 | 2006-06-15 | Fujitsu Ltd | 光学素子及び光スイッチ |
JP2006284862A (ja) * | 2005-03-31 | 2006-10-19 | Dainippon Printing Co Ltd | 異方性光学素子の製造方法 |
JP2007183316A (ja) * | 2006-01-04 | 2007-07-19 | Precise Gauges Co Ltd | 波長変換導波路素子及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
JPN7012004956; SATO, K., KONDO, M., and KURIHARA, K.: 'Electro-optic effect caused by polar nanoregion switching in lanthanum-modified lead zirconate titan' Journal of Applied Physics Vol.102, No.5, 20070901, pp.054104-1 - 054104-6 * |
Also Published As
Publication number | Publication date |
---|---|
WO2009066728A1 (ja) | 2009-05-28 |
CN101918882A (zh) | 2010-12-15 |
JPWO2009066728A1 (ja) | 2011-04-07 |
US20100245970A1 (en) | 2010-09-30 |
US8154786B2 (en) | 2012-04-10 |
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