JP5258282B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5258282B2
JP5258282B2 JP2007332172A JP2007332172A JP5258282B2 JP 5258282 B2 JP5258282 B2 JP 5258282B2 JP 2007332172 A JP2007332172 A JP 2007332172A JP 2007332172 A JP2007332172 A JP 2007332172A JP 5258282 B2 JP5258282 B2 JP 5258282B2
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JP
Japan
Prior art keywords
circuit
film
voltage
circuit unit
semiconductor device
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Expired - Fee Related
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JP2007332172A
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English (en)
Japanese (ja)
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JP2008181499A (ja
JP2008181499A5 (enExample
Inventor
康之 高橋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007332172A priority Critical patent/JP5258282B2/ja
Publication of JP2008181499A publication Critical patent/JP2008181499A/ja
Publication of JP2008181499A5 publication Critical patent/JP2008181499A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
    • H04B5/79—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for data transfer in combination with power transfer

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Near-Field Transmission Systems (AREA)
JP2007332172A 2006-12-26 2007-12-25 半導体装置 Expired - Fee Related JP5258282B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007332172A JP5258282B2 (ja) 2006-12-26 2007-12-25 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006350019 2006-12-26
JP2006350019 2006-12-26
JP2007332172A JP5258282B2 (ja) 2006-12-26 2007-12-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2008181499A JP2008181499A (ja) 2008-08-07
JP2008181499A5 JP2008181499A5 (enExample) 2011-02-10
JP5258282B2 true JP5258282B2 (ja) 2013-08-07

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Family Applications (1)

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JP2007332172A Expired - Fee Related JP5258282B2 (ja) 2006-12-26 2007-12-25 半導体装置

Country Status (2)

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US (1) US8358202B2 (enExample)
JP (1) JP5258282B2 (enExample)

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* Cited by examiner, † Cited by third party
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DE602007013986D1 (de) * 2006-10-18 2011-06-01 Semiconductor Energy Lab ID-Funktransponder
US7750852B2 (en) 2007-04-13 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8115160B2 (en) * 2008-03-14 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Protection circuit and photoelectric conversion device
JP5388632B2 (ja) 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
JP4838827B2 (ja) * 2008-07-02 2011-12-14 シャープ株式会社 太陽電池モジュールおよびその製造方法
WO2010032573A1 (en) * 2008-09-17 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8224277B2 (en) * 2008-09-26 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20110063668A (ko) * 2008-09-30 2011-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
WO2010038596A1 (en) * 2008-10-03 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Modulation circuit and semiconductor device including the same
JP5319469B2 (ja) * 2008-10-03 2013-10-16 株式会社半導体エネルギー研究所 Ｒｆｉｄタグ
KR101595755B1 (ko) 2008-10-03 2016-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5762723B2 (ja) * 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 変調回路及びそれを備えた半導体装置
WO2011093150A1 (en) * 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9092710B2 (en) * 2010-03-25 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8928466B2 (en) * 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5815337B2 (ja) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 半導体装置
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6169376B2 (ja) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 電池管理ユニット、保護回路、蓄電装置
US9287098B2 (en) * 2012-11-01 2016-03-15 Advanced Energy Industries, Inc. Charge removal from electrodes in unipolar sputtering system
USD758372S1 (en) * 2013-03-13 2016-06-07 Nagrastar Llc Smart card interface
USD759022S1 (en) 2013-03-13 2016-06-14 Nagrastar Llc Smart card interface
US9647997B2 (en) 2013-03-13 2017-05-09 Nagrastar, Llc USB interface for performing transport I/O
US9888283B2 (en) 2013-03-13 2018-02-06 Nagrastar Llc Systems and methods for performing transport I/O
USD729808S1 (en) 2013-03-13 2015-05-19 Nagrastar Llc Smart card interface
USD780763S1 (en) 2015-03-20 2017-03-07 Nagrastar Llc Smart card interface
USD864968S1 (en) 2015-04-30 2019-10-29 Echostar Technologies L.L.C. Smart card interface
JP7399857B2 (ja) 2018-07-10 2023-12-18 株式会社半導体エネルギー研究所 二次電池の保護回路
KR20220084063A (ko) 2019-10-17 2022-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102425160B1 (ko) 2020-06-24 2022-07-26 코나아이 (주) 스마트 카드

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US3748582A (en) * 1970-05-15 1973-07-24 Sony Corp Control signal generating circuit for sharp frequency response tuning
US5483207A (en) * 1994-12-30 1996-01-09 At&T Corp. Adiabatic MOS oscillators
US6489833B1 (en) * 1995-03-29 2002-12-03 Hitachi, Ltd. Semiconductor integrated circuit device
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JP3392016B2 (ja) 1996-09-13 2003-03-31 株式会社日立製作所 電力伝送システム並びに電力伝送および情報通信システム
JP2000195023A (ja) * 1998-12-25 2000-07-14 Toshiba Corp ヘッドサスペンションアセンブリ及び同アセンブリを搭載した磁気ディスク装置
JP4152595B2 (ja) 2001-01-11 2008-09-17 横浜ゴム株式会社 トランスポンダ及びそのシステム
US6522083B1 (en) * 2001-11-08 2003-02-18 Linear Technology Corp. Driver circuitry with tuned output impedance
WO2003063203A2 (en) * 2002-01-18 2003-07-31 The Regents Of The University Of California On-chip esd protection circuit
JP2004006531A (ja) * 2002-05-31 2004-01-08 Renesas Technology Corp 半導体装置およびその製造方法
US6906596B2 (en) * 2002-09-25 2005-06-14 Renesas Technology Corp. Oscillation circuit and a communication semiconductor integrated circuit
JP3906173B2 (ja) * 2003-03-17 2007-04-18 松下電器産業株式会社 可変利得増幅回路
JP4536496B2 (ja) * 2003-12-19 2010-09-01 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
JP2005202721A (ja) * 2004-01-16 2005-07-28 Matsushita Electric Ind Co Ltd 非接触データキャリア
JP4265487B2 (ja) 2004-06-17 2009-05-20 富士通株式会社 リーダー装置、その装置の送信方法及びタグ
US7317378B2 (en) * 2004-08-17 2008-01-08 Tagent Corporation Product identification tag device and reader
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TWI321901B (en) * 2006-11-10 2010-03-11 Orise Technology Co Ltd Rail-to-rail class-ab operational amplifier

Also Published As

Publication number Publication date
US20080174408A1 (en) 2008-07-24
JP2008181499A (ja) 2008-08-07
US8358202B2 (en) 2013-01-22

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