JP5254613B2 - 被加工物の有向多偏向イオンビームミリングならびにその程度の決定および制御 - Google Patents

被加工物の有向多偏向イオンビームミリングならびにその程度の決定および制御 Download PDF

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Publication number
JP5254613B2
JP5254613B2 JP2007529134A JP2007529134A JP5254613B2 JP 5254613 B2 JP5254613 B2 JP 5254613B2 JP 2007529134 A JP2007529134 A JP 2007529134A JP 2007529134 A JP2007529134 A JP 2007529134A JP 5254613 B2 JP5254613 B2 JP 5254613B2
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JP
Japan
Prior art keywords
ion beam
directed
workpiece
deflected
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2007529134A
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English (en)
Japanese (ja)
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JP2008511115A5 (https=
JP2008511115A (ja
Inventor
ディミトリ ボグスラヴスキー，
ヴァレンティン シェレピン，
コリン スミス，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SELA SEMICONDUCTOR ENGINEERING LABORATORIES LTD.
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SELA SEMICONDUCTOR ENGINEERING LABORATORIES LTD.
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Publication of JP2008511115A publication Critical patent/JP2008511115A/ja
Publication of JP2008511115A5 publication Critical patent/JP2008511115A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3114—Machining
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Drying Of Semiconductors (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
JP2007529134A 2004-08-24 2005-08-24 被加工物の有向多偏向イオンビームミリングならびにその程度の決定および制御 Expired - Lifetime JP5254613B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60354404P 2004-08-24 2004-08-24
US60/603,544 2004-08-24
PCT/IL2005/000913 WO2006021958A2 (en) 2004-08-24 2005-08-24 Directed multi-deflected ion beam milling of a work piece and determining and controlling extent thereof

Publications (3)

Publication Number Publication Date
JP2008511115A JP2008511115A (ja) 2008-04-10
JP2008511115A5 JP2008511115A5 (https=) 2008-07-03
JP5254613B2 true JP5254613B2 (ja) 2013-08-07

Family

ID=35677383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007529134A Expired - Lifetime JP5254613B2 (ja) 2004-08-24 2005-08-24 被加工物の有向多偏向イオンビームミリングならびにその程度の決定および制御

Country Status (6)

Country Link
US (2) US20080078750A1 (https=)
EP (1) EP1787310A2 (https=)
JP (1) JP5254613B2 (https=)
KR (3) KR20070101204A (https=)
CN (1) CN101069260B (https=)
WO (1) WO2006021958A2 (https=)

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US11276557B2 (en) 2019-09-17 2022-03-15 Applied Materials Israel Ltd. Forming a vertical surface
US10903044B1 (en) * 2020-02-12 2021-01-26 Applied Materials Israel Ltd. Filling empty structures with deposition under high-energy SEM for uniform DE layering
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US11784025B1 (en) 2022-05-10 2023-10-10 Plasma-Therm Nes Llc Integral sweep in ion beam system
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Also Published As

Publication number Publication date
EP1787310A2 (en) 2007-05-23
US20080078750A1 (en) 2008-04-03
KR101355280B1 (ko) 2014-01-27
WO2006021958A2 (en) 2006-03-02
CN101069260B (zh) 2012-09-26
KR20070101204A (ko) 2007-10-16
CN101069260A (zh) 2007-11-07
US20130180843A1 (en) 2013-07-18
WO2006021958A3 (en) 2006-05-04
KR20130135320A (ko) 2013-12-10
JP2008511115A (ja) 2008-04-10
KR20120109641A (ko) 2012-10-08

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