JP5254589B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5254589B2
JP5254589B2 JP2007267546A JP2007267546A JP5254589B2 JP 5254589 B2 JP5254589 B2 JP 5254589B2 JP 2007267546 A JP2007267546 A JP 2007267546A JP 2007267546 A JP2007267546 A JP 2007267546A JP 5254589 B2 JP5254589 B2 JP 5254589B2
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Japan
Prior art keywords
layer
conductive layer
photocatalytic
light
conductive
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Expired - Fee Related
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JP2007267546A
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English (en)
Japanese (ja)
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JP2008124445A5 (https=
JP2008124445A (ja
Inventor
将文 森末
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007267546A priority Critical patent/JP5254589B2/ja
Publication of JP2008124445A publication Critical patent/JP2008124445A/ja
Publication of JP2008124445A5 publication Critical patent/JP2008124445A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2007267546A 2006-10-17 2007-10-15 半導体装置の作製方法 Expired - Fee Related JP5254589B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007267546A JP5254589B2 (ja) 2006-10-17 2007-10-15 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006282296 2006-10-17
JP2006282296 2006-10-17
JP2007267546A JP5254589B2 (ja) 2006-10-17 2007-10-15 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008124445A JP2008124445A (ja) 2008-05-29
JP2008124445A5 JP2008124445A5 (https=) 2010-11-18
JP5254589B2 true JP5254589B2 (ja) 2013-08-07

Family

ID=39508821

Family Applications (1)

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JP2007267546A Expired - Fee Related JP5254589B2 (ja) 2006-10-17 2007-10-15 半導体装置の作製方法

Country Status (1)

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JP (1) JP5254589B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100984256B1 (ko) * 2009-08-17 2010-09-30 (주) 파루 자기 정렬 그라비어인쇄를 이용한 중첩정밀도 제어 방법
KR102005736B1 (ko) 2009-10-16 2019-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101894898B1 (ko) * 2011-02-11 2018-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 사용한 전자 기기
JP6094768B2 (ja) 2012-04-27 2017-03-15 パナソニックＩｐマネジメント株式会社 セラミック基板複合体およびセラミック基板複合体の製造方法
JP6235580B2 (ja) * 2012-06-29 2017-11-22 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Ｉｉ−ｖｉ族ベースの発光半導体デバイス
JP6184234B2 (ja) * 2013-08-02 2017-08-23 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
DE102014008963A1 (de) * 2014-06-23 2016-01-07 Merck Patent Gmbh Additiv für LDS-Kunststoffe
CN114656804B (zh) * 2022-03-03 2022-12-09 江苏圣天新材料有限公司 一种覆铜板用软性复合硅微粉的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003298062A (ja) * 2002-03-29 2003-10-17 Sharp Corp 薄膜トランジスタ及びその製造方法
JP4324355B2 (ja) * 2002-09-13 2009-09-02 大日本印刷株式会社 パターン形成体の製造方法
JP4498715B2 (ja) * 2003-09-26 2010-07-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5116212B2 (ja) * 2004-03-19 2013-01-09 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP5110785B2 (ja) * 2004-10-08 2012-12-26 株式会社半導体エネルギー研究所 表示装置の作製方法
JP4613044B2 (ja) * 2004-10-26 2011-01-12 大日本印刷株式会社 有機エレクトロルミネッセント素子用基板

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JP2008124445A (ja) 2008-05-29

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