JP5249015B2 - 広帯域のウェーハ検査用反射光学システム - Google Patents
広帯域のウェーハ検査用反射光学システム Download PDFInfo
- Publication number
- JP5249015B2 JP5249015B2 JP2008504138A JP2008504138A JP5249015B2 JP 5249015 B2 JP5249015 B2 JP 5249015B2 JP 2008504138 A JP2008504138 A JP 2008504138A JP 2008504138 A JP2008504138 A JP 2008504138A JP 5249015 B2 JP5249015 B2 JP 5249015B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- optical
- wafer
- optical subsystem
- reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0605—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using two curved mirrors
- G02B17/061—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using two curved mirrors on-axis systems with at least one of the mirrors having a central aperture
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/9563—Inspecting patterns on the surface of objects and suppressing pattern images
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/063—Illuminating optical parts
- G01N2201/0636—Reflectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Optics & Photonics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/097,526 US7351980B2 (en) | 2005-03-31 | 2005-03-31 | All-reflective optical systems for broadband wafer inspection |
| US11/097,526 | 2005-03-31 | ||
| PCT/US2006/010042 WO2006104748A1 (en) | 2005-03-31 | 2006-03-21 | All-reflective optical systems for broadband wafer inspection |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008534963A JP2008534963A (ja) | 2008-08-28 |
| JP2008534963A5 JP2008534963A5 (enExample) | 2012-08-30 |
| JP5249015B2 true JP5249015B2 (ja) | 2013-07-31 |
Family
ID=36602393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008504138A Active JP5249015B2 (ja) | 2005-03-31 | 2006-03-21 | 広帯域のウェーハ検査用反射光学システム |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7351980B2 (enExample) |
| EP (1) | EP1869435A1 (enExample) |
| JP (1) | JP5249015B2 (enExample) |
| IL (1) | IL186168A (enExample) |
| WO (1) | WO2006104748A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7633689B2 (en) * | 2007-07-18 | 2009-12-15 | Asml Holding N.V. | Catadioptric optical system for scatterometry |
| EP2203777B1 (en) * | 2007-10-02 | 2018-12-05 | KLA-Tencor Corporation | Optical imaging system with catoptric objective; broadband objective with mirror; and refractive lenses and broadband optical imaging system having two or more imaging paths |
| US9052494B2 (en) | 2007-10-02 | 2015-06-09 | Kla-Tencor Technologies Corporation | Optical imaging system with catoptric objective; broadband objective with mirror; and refractive lenses and broadband optical imaging system having two or more imaging paths |
| US8553337B2 (en) * | 2007-11-12 | 2013-10-08 | Cornell University | Multi-path, multi-magnification, non-confocal fluorescence emission endoscopy apparatus and methods |
| JP5174697B2 (ja) | 2008-01-31 | 2013-04-03 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置 |
| JP5022959B2 (ja) * | 2008-03-24 | 2012-09-12 | 株式会社日立製作所 | 反射屈折型対物レンズを用いた欠陥検査装置 |
| DE112009000832T5 (de) * | 2008-04-04 | 2011-07-28 | Nanda Technologies GmbH, 85716 | System und Verfahren zur optischen Inspektion |
| US8064148B2 (en) | 2008-04-15 | 2011-11-22 | Asml Holding N.V. | High numerical aperture catadioptric objectives without obscuration and applications thereof |
| EP2169466B1 (en) * | 2008-09-30 | 2017-06-07 | ASML Holding N.V. | Inspection apparatus and method for sphero-chromatic aberration correction |
| EP2400345B1 (en) | 2010-06-22 | 2016-05-11 | ASML Holding N.V. | Catadioptric illumination system for metrology |
| US8575576B2 (en) * | 2011-02-14 | 2013-11-05 | Kla-Tencor Corporation | Optical imaging system with laser droplet plasma illuminator |
| US20140118819A1 (en) * | 2012-10-31 | 2014-05-01 | Corning Incorporated | Optical device, imaging system which incorporates the optical device and method implemented by the imaging system for imaging a specimen |
| CN102967887A (zh) * | 2012-11-13 | 2013-03-13 | 深圳市华星光电技术有限公司 | 一种用于检测空卡匣的检测装置 |
| US9075027B2 (en) | 2012-11-21 | 2015-07-07 | Kla-Tencor Corporation | Apparatus and methods for detecting defects in vertical memory |
| TWI688760B (zh) * | 2013-03-11 | 2020-03-21 | 美商克萊譚克公司 | 使用表面增強電場之缺陷偵測 |
| US9599573B2 (en) | 2014-12-02 | 2017-03-21 | Kla-Tencor Corporation | Inspection systems and techniques with enhanced detection |
| US10309907B2 (en) * | 2015-03-04 | 2019-06-04 | Kla-Tencor Corporation | All reflective wafer defect inspection and review systems and methods |
| EP3411694A4 (en) * | 2016-02-03 | 2019-09-04 | Kla-Tencor Corporation | WAFER DEFECT INSPECTION AND TESTING SYSTEMS |
| US10656098B2 (en) | 2016-02-03 | 2020-05-19 | Kla-Tencor Corporation | Wafer defect inspection and review systems |
| US10168273B1 (en) | 2017-07-01 | 2019-01-01 | Kla-Tencor Corporation | Methods and apparatus for polarizing reticle inspection |
| US11333621B2 (en) | 2017-07-11 | 2022-05-17 | Kla-Tencor Corporation | Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction |
| US11317500B2 (en) | 2017-08-30 | 2022-04-26 | Kla-Tencor Corporation | Bright and clean x-ray source for x-ray based metrology |
| US10959318B2 (en) | 2018-01-10 | 2021-03-23 | Kla-Tencor Corporation | X-ray metrology system with broadband laser produced plasma illuminator |
| US11272607B2 (en) | 2019-11-01 | 2022-03-08 | Kla Corporation | Laser produced plasma illuminator with low atomic number cryogenic target |
| US11259394B2 (en) | 2019-11-01 | 2022-02-22 | Kla Corporation | Laser produced plasma illuminator with liquid sheet jet target |
| US11143604B1 (en) | 2020-04-06 | 2021-10-12 | Kla Corporation | Soft x-ray optics with improved filtering |
| CN116685878A (zh) | 2020-12-30 | 2023-09-01 | Asml荷兰有限公司 | 用于清洁检查系统的设备和方法 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4934805A (en) * | 1986-11-12 | 1990-06-19 | The Boeing Company | Fixed step catoptric zoom system |
| JP3280401B2 (ja) * | 1991-09-11 | 2002-05-13 | 株式会社日立製作所 | 欠陥検査装置および欠陥検査方法 |
| JP3151260B2 (ja) * | 1991-12-09 | 2001-04-03 | オリンパス光学工業株式会社 | 落射型x線顕微鏡 |
| JP3336361B2 (ja) * | 1993-06-11 | 2002-10-21 | 株式会社ニコン | 縮小投影露光用反射型x線マスクの検査装置および検査方法 |
| JP3183046B2 (ja) * | 1994-06-06 | 2001-07-03 | キヤノン株式会社 | 異物検査装置及びそれを用いた半導体デバイスの製造方法 |
| US5559338A (en) * | 1994-10-04 | 1996-09-24 | Excimer Laser Systems, Inc. | Deep ultraviolet optical imaging system for microlithography and/or microfabrication |
| US6512631B2 (en) * | 1996-07-22 | 2003-01-28 | Kla-Tencor Corporation | Broad-band deep ultraviolet/vacuum ultraviolet catadioptric imaging system |
| US6483638B1 (en) * | 1996-07-22 | 2002-11-19 | Kla-Tencor Corporation | Ultra-broadband UV microscope imaging system with wide range zoom capability |
| US5999310A (en) * | 1996-07-22 | 1999-12-07 | Shafer; David Ross | Ultra-broadband UV microscope imaging system with wide range zoom capability |
| JPH10325805A (ja) * | 1997-05-23 | 1998-12-08 | Nikon Corp | 半導体ウエハの自動検査装置 |
| JP3575586B2 (ja) * | 1997-11-12 | 2004-10-13 | 富士電機デバイステクノロジー株式会社 | 傷検査装置 |
| US5917594A (en) * | 1998-04-08 | 1999-06-29 | Kla-Tencor Corporation | Spectroscopic measurement system using an off-axis spherical mirror and refractive elements |
| WO2001023936A1 (en) * | 1999-09-28 | 2001-04-05 | Tropel Corporation | Double mirror catadioptric objective lens system with three optical surface multifunction component |
| US7414785B2 (en) * | 2000-02-24 | 2008-08-19 | Asml Holding N.V. | Ultraviolet polarization beam splitter with minimum apodization |
| JP2001264262A (ja) * | 2000-03-14 | 2001-09-26 | Nikon Corp | 表面異物検査方法および表面異物検査装置 |
| JP2001289794A (ja) * | 2000-04-04 | 2001-10-19 | Nikon Corp | 欠陥検査装置 |
| US7139083B2 (en) * | 2000-09-20 | 2006-11-21 | Kla-Tencor Technologies Corp. | Methods and systems for determining a composition and a thickness of a specimen |
| US6791099B2 (en) * | 2001-02-14 | 2004-09-14 | Applied Materials, Inc. | Laser scanning wafer inspection using nonlinear optical phenomena |
| US6570650B1 (en) * | 2001-06-21 | 2003-05-27 | Kla-Tenor Corporation | Apparatus and methods for reducing thin film color variation in optical inspection of semiconductor devices and other surfaces |
| US6603541B2 (en) * | 2001-06-28 | 2003-08-05 | Kla-Tencor Technologies Corporation | Wafer inspection using optimized geometry |
| JP3728495B2 (ja) * | 2001-10-05 | 2005-12-21 | 独立行政法人産業技術総合研究所 | 多層膜マスク欠陥検査方法及び装置 |
| EP1306698A1 (en) | 2001-10-26 | 2003-05-02 | Nikon Corporation | Multilayer reflective mirrors for EUV, wavefront-aberration-correction methods for the same, and EUV optical systems comprising the same |
| EP1333323A3 (en) | 2002-02-01 | 2004-10-06 | Nikon Corporation | Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same |
| EP1446813B1 (de) * | 2002-05-10 | 2010-11-10 | Carl Zeiss SMT AG | Reflektives roentgenmikroskop zur untersuchung von objekten mit wellenlaengen = 100nm in reflexion |
| US6788404B2 (en) * | 2002-07-17 | 2004-09-07 | Kla-Tencor Technologies Corporation | Inspection system with multiple illumination sources |
| JP2004193269A (ja) * | 2002-12-10 | 2004-07-08 | Hitachi Ltd | マスクの製造方法および半導体集積回路装置の製造方法 |
| US7126131B2 (en) * | 2003-01-16 | 2006-10-24 | Metrosol, Inc. | Broad band referencing reflectometer |
| DE10319268A1 (de) * | 2003-04-25 | 2004-12-02 | Carl Zeiss Sms Gmbh | Diffraktiver Strahlteiler für Abbildungssysteme |
| JP4142552B2 (ja) * | 2003-10-23 | 2008-09-03 | 株式会社日立製作所 | 形状プロファイル測定装置およびそれを用いた半導体デバイスの製造方法 |
| JP2005241290A (ja) * | 2004-02-24 | 2005-09-08 | Toshiba Corp | 画像入力装置及び検査装置 |
| IL162617A (en) * | 2004-06-17 | 2010-04-15 | Nova Measuring Instr Ltd | Reflective optical system |
| US7295739B2 (en) * | 2004-10-20 | 2007-11-13 | Kla-Tencor Technologies Corporation | Coherent DUV illumination for semiconductor wafer inspection |
| JP5042494B2 (ja) * | 2005-12-22 | 2012-10-03 | インテル コーポレイション | 散乱光の角度分布を使ったマスクブランクの欠陥の検出および特性評価 |
-
2005
- 2005-03-31 US US11/097,526 patent/US7351980B2/en not_active Expired - Lifetime
-
2006
- 2006-03-21 JP JP2008504138A patent/JP5249015B2/ja active Active
- 2006-03-21 EP EP06739004A patent/EP1869435A1/en not_active Ceased
- 2006-03-21 WO PCT/US2006/010042 patent/WO2006104748A1/en not_active Ceased
-
2007
- 2007-09-23 IL IL186168A patent/IL186168A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| IL186168A0 (en) | 2008-01-20 |
| US20060219930A1 (en) | 2006-10-05 |
| IL186168A (en) | 2012-02-29 |
| US7351980B2 (en) | 2008-04-01 |
| WO2006104748A1 (en) | 2006-10-05 |
| JP2008534963A (ja) | 2008-08-28 |
| EP1869435A1 (en) | 2007-12-26 |
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