JP5245091B2 - 反射リソグラフィーマスクの製造方法および前記方法により得られるマスク - Google Patents
反射リソグラフィーマスクの製造方法および前記方法により得られるマスク Download PDFInfo
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- JP5245091B2 JP5245091B2 JP2008544953A JP2008544953A JP5245091B2 JP 5245091 B2 JP5245091 B2 JP 5245091B2 JP 2008544953 A JP2008544953 A JP 2008544953A JP 2008544953 A JP2008544953 A JP 2008544953A JP 5245091 B2 JP5245091 B2 JP 5245091B2
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000001459 lithography Methods 0.000 title claims description 3
- 238000000206 photolithography Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 125000002524 organometallic group Chemical group 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- 238000010521 absorption reaction Methods 0.000 claims description 33
- 150000002739 metals Chemical class 0.000 claims description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- -1 organometallic acrylates Chemical class 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- 150000002902 organometallic compounds Chemical class 0.000 claims description 7
- 239000006096 absorbing agent Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229920001795 coordination polymer Polymers 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 238000010849 ion bombardment Methods 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 230000035939 shock Effects 0.000 claims 1
- 230000002745 absorbent Effects 0.000 abstract description 6
- 239000002250 absorbent Substances 0.000 abstract description 6
- 238000011161 development Methods 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 description 11
- 239000000178 monomer Substances 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000012822 chemical development Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Elements Other Than Lenses (AREA)
Description
・平面状基材40上に反射構造体(この構造体は極紫外マスクの動作波長で反射性である)を堆積する工程。構造体は、ブラッグミラータイプの反射構造体を構成するように異なる指数と指数に基づいて選択された厚さとを有する交互透過層c1、c2、…cnの積重体42である(図2a)。一例として、層は、イオンビームスパッタリングにより堆積される。数十対の透過層(たとえば40対)は、基材上にスパッタリングされ、各対は、たとえば、モリブデン層とシリコン層とを含む。各対の全厚さは、約13.8ナノメートルの波長で最適の反射を得るために約6.9ナノメートルである。その場合、反射係数は60%を超え、75%に達することさえもありうる。層対はまた、モリブデン/ベリリウム対またはルテニウム/ベリリウム対であってもよく、基材は、直径200mmのシリコンウェーハまたはガラスまたは石英プレートであってもよい;
・マスクの動作極紫外波長(典型的には10nm〜14nm)で良好な吸収性を有する金属を含有する有機金属モノマーの均一層46を反射構造体42上に堆積する工程(図2b)。モノマーに使用される金属は、次の金属、すなわち、Pt、Pd、Al、Ti、Y、Hf、Zr、Fe、または複数種のこれらの金属から選択され、層中の金属の割合は10〜90%である;
・使用されるモノマーのタイプに依存して、たとえば、電子衝撃Beにより(図2c)またはイオン衝撃によりまたは紫外光子により、層46に照射する工程。紫外線は、原理的には、長波長(190〜350ナノメートル)の紫外線であるが、短波長紫外線さらには極紫外線を使用することも可能である;および
・非重合ゾーンを除去し、かつ反射マスクの吸収ゾーンを構成する重合ゾーン50を保持することにより、照射された場所だけが重合されていて他の場所は重合されていない層46を化学現像する工程。現像により除去された部分は、ミラー構造体42の反射表面を露出させた状態で残る。図2dは、吸収ゾーン50が存在する箇所以外はブラッグミラーの動作波長の極紫外線を反射する完成反射マスクを示している。
・先行技術で行われていた吸収層のエッチング工程を用いないですむので、緩衝層の材料の堆積を回避することが可能になり;
・制御の困難な工程、特定的には、吸収積重体のエッチング工程を回避することが可能になり;しかも
・極UV域で高い吸収率を有する材料(先行技術の方法では使用できなかった材料)を使用することが可能になる。
Claims (8)
- 反射方式で動作する極紫外フォトリソグラフィーマスクの作製方法であって、この波長で高い吸収係数を有する金属を含有する層(46)が、前記マスクの動作波長で反射性の反射構造体(42)でコーティングされた基材(40)上に堆積され、かつこの吸収層が、マスクの動作波長で吸収性のゾーン(50)のパターンを画定するように所望のパターンでエッチングされる方法において、
衝撃に対して感受性を有しかつ高い吸収係数の金属を含有する有機金属化合物の層が堆積され、前記有機金属化合物の層は選択的照射されることで高い吸収係数を有する金属を含有する有機金属ポリマーのゾーンが形成され、前記重合されたゾーンはマスクの動作波長において吸収性である前記ゾーンを構成することを特徴とする方法。 - 前記選択的照射が、光子衝撃、電子衝撃、またはイオン衝撃により行われることを特徴とする、請求項1に記載の方法。
- 前記金属が、次の金属、すなわち、白金、パラジウム、イットリウム、ハフニウム、ジルコニウム、および鉄、さらにはアルミニウムおよびチタン、あるいはこれらの種々の金属の混合物から選択されることを特徴とする、請求項1に記載の方法。
- 前記有機金属化合物が、有機金属アクリレート類、有機金属メタクリレート類、有機金属スチレン類、およびそれらの混合物から選択されることを特徴とする、請求項1〜3のいずれか一項に記載の方法。
- 前記金属が、層中に10〜90%の比率で存在することを特徴とする、請求項1〜4のいずれか一項に記載の方法。
- 反射方式で動作する極紫外フォトリソグラフィーマスクであって、基材(40)と、前記基材上に均一に堆積された反射構造体(42)と、マスクの動作波長で吸収性の吸収層(50)と、を含み、前記層が、反射構造体の上に堆積され、かつ所望のマスキングパターンでエッチングされるマスクにおいて、
前記吸収層が、マスクの動作波長で強い吸収を有する金属を含有する有機金属ポリマーであることを特徴とするマスク。 - 前記金属が、次の金属、すなわち、白金、パラジウム、アルミニウム、チタン、イットリウム、ハフニウム、ジルコニウム、鉄、または複数種のこれらの金属から選択されることを特徴とする、請求項6に記載のフォトリソグラフィーマスク。
- 前記有機金属レジストが、層中に10〜90%の金属比率で金属を含有することを特徴とする、請求項7に記載のフォトリソグラフィーマスク。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0512611 | 2005-12-13 | ||
FR0512611A FR2894691B1 (fr) | 2005-12-13 | 2005-12-13 | Procede de fabrication de masque lithographique en reflexion et masque issu du procede |
PCT/EP2006/069272 WO2007068617A1 (fr) | 2005-12-13 | 2006-12-04 | Procede de fabrication de masque lithographique en reflexion et masque issu du procede |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009519594A JP2009519594A (ja) | 2009-05-14 |
JP5245091B2 true JP5245091B2 (ja) | 2013-07-24 |
Family
ID=36928173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008544953A Expired - Fee Related JP5245091B2 (ja) | 2005-12-13 | 2006-12-04 | 反射リソグラフィーマスクの製造方法および前記方法により得られるマスク |
Country Status (5)
Country | Link |
---|---|
US (1) | US7923177B2 (ja) |
EP (1) | EP1960836B1 (ja) |
JP (1) | JP5245091B2 (ja) |
FR (1) | FR2894691B1 (ja) |
WO (1) | WO2007068617A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101802721B1 (ko) | 2008-12-26 | 2017-11-28 | 호야 가부시키가이샤 | 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 |
FR2994605B1 (fr) * | 2012-08-20 | 2014-08-22 | Commissariat Energie Atomique | Procede de fabrication de masques euv minimisant l'impact des defauts de substrat |
JP6135105B2 (ja) * | 2012-11-29 | 2017-05-31 | 凸版印刷株式会社 | 反射型マスクの製造方法 |
FR3002655B1 (fr) * | 2013-02-28 | 2016-05-13 | Commissariat Energie Atomique | Procede de photolithographie a double masque minimisant l'impact des defauts de substrat |
US9372402B2 (en) * | 2013-09-13 | 2016-06-21 | The Research Foundation For The State University Of New York | Molecular organometallic resists for EUV |
KR102352740B1 (ko) * | 2015-04-30 | 2022-01-18 | 삼성디스플레이 주식회사 | 마스크의 제조 방법 및 표시 장치의 제조 방법 |
JP6737436B2 (ja) | 2015-11-10 | 2020-08-12 | 株式会社Screenホールディングス | 膜処理ユニットおよび基板処理装置 |
EP3258317B1 (en) * | 2016-06-16 | 2022-01-19 | IMEC vzw | Method for performing extreme ultra violet (euv) lithography |
Family Cites Families (11)
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---|---|---|---|---|
US4332879A (en) * | 1978-12-01 | 1982-06-01 | Hughes Aircraft Company | Process for depositing a film of controlled composition using a metallo-organic photoresist |
JPS57108850A (en) * | 1980-12-25 | 1982-07-07 | Fujitsu Ltd | Formation of metallic pattern |
JPS62263973A (ja) * | 1986-05-08 | 1987-11-16 | Kazumichi Omura | 金属薄膜とその製造方法 |
JPH0251216A (ja) * | 1988-08-13 | 1990-02-21 | Canon Inc | X線露光用マスク |
JPH05158229A (ja) * | 1991-12-04 | 1993-06-25 | Fujitsu Ltd | 金属薄膜パターンの形成方法 |
US5304437A (en) * | 1992-04-03 | 1994-04-19 | At&T Bell Laboratories | Mask for x-ray pattern delineation |
AU5531294A (en) * | 1992-11-19 | 1994-06-08 | University Court Of The University Of Dundee, The | Method of deposition |
US6171757B1 (en) * | 1999-07-12 | 2001-01-09 | International Business Machines Corporation | Organometallic polymers and use thereof |
US6436605B1 (en) * | 1999-07-12 | 2002-08-20 | International Business Machines Corporation | Plasma resistant composition and use thereof |
US20030000921A1 (en) * | 2001-06-29 | 2003-01-02 | Ted Liang | Mask repair with electron beam-induced chemical etching |
US7129010B2 (en) * | 2002-08-02 | 2006-10-31 | Schott Ag | Substrates for in particular microlithography |
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2005
- 2005-12-13 FR FR0512611A patent/FR2894691B1/fr not_active Expired - Fee Related
-
2006
- 2006-12-04 EP EP06830336.1A patent/EP1960836B1/fr not_active Not-in-force
- 2006-12-04 WO PCT/EP2006/069272 patent/WO2007068617A1/fr active Application Filing
- 2006-12-04 JP JP2008544953A patent/JP5245091B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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JP2009519594A (ja) | 2009-05-14 |
US7923177B2 (en) | 2011-04-12 |
EP1960836B1 (fr) | 2013-10-16 |
WO2007068617A1 (fr) | 2007-06-21 |
FR2894691A1 (fr) | 2007-06-15 |
FR2894691B1 (fr) | 2008-01-18 |
US20090269678A1 (en) | 2009-10-29 |
EP1960836A1 (fr) | 2008-08-27 |
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