JP5238879B2 - フーリエ光学系を含む照明系 - Google Patents

フーリエ光学系を含む照明系 Download PDF

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Publication number
JP5238879B2
JP5238879B2 JP2011507808A JP2011507808A JP5238879B2 JP 5238879 B2 JP5238879 B2 JP 5238879B2 JP 2011507808 A JP2011507808 A JP 2011507808A JP 2011507808 A JP2011507808 A JP 2011507808A JP 5238879 B2 JP5238879 B2 JP 5238879B2
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Japan
Prior art keywords
lens
optical system
illumination
fourier
incident
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JP2011507808A
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English (en)
Japanese (ja)
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JP2011521445A (ja
JP2011521445A5 (enExample
Inventor
マルクス シュヴァープ
ミハエル ライ
マルクス デギュンター
アルトゥル ヘーゲレ
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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Priority claimed from DE200810023763 external-priority patent/DE102008023763A1/de
Priority claimed from DE200810035320 external-priority patent/DE102008035320A1/de
Application filed by カール・ツァイス・エスエムティー・ゲーエムベーハー filed Critical カール・ツァイス・エスエムティー・ゲーエムベーハー
Publication of JP2011521445A publication Critical patent/JP2011521445A/ja
Publication of JP2011521445A5 publication Critical patent/JP2011521445A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
  • Lenses (AREA)
JP2011507808A 2008-05-09 2009-04-17 フーリエ光学系を含む照明系 Active JP5238879B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US5178508P 2008-05-09 2008-05-09
DE102008023763.9 2008-05-09
DE200810023763 DE102008023763A1 (de) 2008-05-09 2008-05-09 Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage, Mikrolithographie-Projektionsbelichtungsanlage mit einem solchen Beleuchtungssystem sowie Fourieroptiksystem
US61/051,785 2008-05-09
DE200810035320 DE102008035320A1 (de) 2008-07-25 2008-07-25 Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage, Mikrolithographie-Projektionsbelichtungsanlage mit einem solchen Beleuchtungssystem sowie Fourieroptiksystem
DE102008035320.5 2008-07-25
PCT/EP2009/002824 WO2009135586A1 (en) 2008-05-09 2009-04-17 Illumination system comprising a fourier optical system

Publications (3)

Publication Number Publication Date
JP2011521445A JP2011521445A (ja) 2011-07-21
JP2011521445A5 JP2011521445A5 (enExample) 2012-07-05
JP5238879B2 true JP5238879B2 (ja) 2013-07-17

Family

ID=40900671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011507808A Active JP5238879B2 (ja) 2008-05-09 2009-04-17 フーリエ光学系を含む照明系

Country Status (6)

Country Link
US (1) US8537335B2 (enExample)
EP (1) EP2288963B1 (enExample)
JP (1) JP5238879B2 (enExample)
KR (1) KR101386353B1 (enExample)
CN (1) CN102084298B (enExample)
WO (1) WO2009135586A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011078231A1 (de) 2010-07-21 2012-01-26 Carl Zeiss Smt Gmbh Ortsauflösende Lichtmodulationseinrichtung sowie Beleuchtungssystem mit ortsauflösender Lichtmodulationseinrichtung
US10222781B2 (en) * 2010-12-17 2019-03-05 Deckel Maho Pfronten Gmbh Apparatus for monitoring and providing visual representations of the operating conditions of machine tool parameters
US8546246B2 (en) * 2011-01-13 2013-10-01 International Business Machines Corporation Radiation hardened transistors based on graphene and carbon nanotubes
NL2008009A (en) * 2011-02-02 2012-08-06 Asml Netherlands Bv Illumination system, lithographic apparatus and method.
DE102011076436B4 (de) 2011-05-25 2015-08-13 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
DE102011086949A1 (de) 2011-11-23 2013-05-23 Carl Zeiss Smt Gmbh Beleuchtungs- und Verlagerungsvorrichtung für eine Projektionsbelichtungsanlage
WO2014073548A1 (ja) * 2012-11-07 2014-05-15 株式会社ニコン 空間光変調光学系、照明光学系、露光装置、およびデバイス製造方法
US9091650B2 (en) * 2012-11-27 2015-07-28 Kla-Tencor Corporation Apodization for pupil imaging scatterometry
DE102013212613B4 (de) 2013-06-28 2015-07-23 Carl Zeiss Sms Gmbh Beleuchtungsoptik für ein Metrologiesystem sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik
WO2018168993A1 (ja) * 2017-03-17 2018-09-20 株式会社ニコン 照明装置及び方法、露光装置及び方法、並びにデバイス製造方法
US10139604B2 (en) * 2017-04-04 2018-11-27 Raytheon Company Compact anamorphic objective lens assembly
DE102017210162A1 (de) 2017-06-19 2017-08-17 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithographie
US12372924B2 (en) * 2019-07-15 2025-07-29 Arizona Board Of Regents On Behalf Of The University Of Arizona Complex diversity for accurate phase retrieval with single shot acquisition
CN115127482B (zh) * 2022-08-31 2023-06-16 立臻精密智造(昆山)有限公司 角度测量系统
CN116414010B (zh) * 2023-04-06 2024-04-26 上海镭望光学科技有限公司 一种自由光瞳产生装置及其产生自由光瞳照明的方法
CN117031695B (zh) * 2023-08-21 2024-02-09 东莞锐视光电科技有限公司 光刻镜头装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0588079A (ja) * 1991-09-30 1993-04-09 Matsushita Electric Ind Co Ltd フ−リエ変換レンズおよび光情報処理装置
JPH10123418A (ja) * 1996-10-17 1998-05-15 Ricoh Co Ltd 前絞り２群ズームレンズ
JP3752356B2 (ja) * 1997-04-09 2006-03-08 オリンパス株式会社 実体顕微鏡
DE19837135C5 (de) * 1997-09-29 2016-09-22 Carl Zeiss Meditec Ag Afokales Zoomsystem
JP4392879B2 (ja) * 1998-09-28 2010-01-06 キヤノン株式会社 投影露光装置及びデバイスの製造方法
DE10012326A1 (de) 2000-03-14 2001-09-20 Philips Corp Intellectual Pty Flüssigkristall-Farbbildschirm
TWI334511B (en) 2003-03-31 2010-12-11 Asml Masktools Bv Source and mask optimization
DE10343333A1 (de) * 2003-09-12 2005-04-14 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
KR101159867B1 (ko) 2003-09-12 2012-06-26 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투사 노출 장치용 조명 시스템
JP2005114922A (ja) * 2003-10-06 2005-04-28 Canon Inc 照明光学系及びそれを用いた露光装置
JPWO2005062350A1 (ja) * 2003-12-19 2008-04-17 株式会社ニコン 光束変換素子、露光装置、照明光学系及び露光方法
DE102006030757A1 (de) * 2005-07-18 2007-02-01 Carl Zeiss Smt Ag Polarisationsoptimiertes Beleuchtungssystem
JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム

Also Published As

Publication number Publication date
JP2011521445A (ja) 2011-07-21
WO2009135586A1 (en) 2009-11-12
US20110102758A1 (en) 2011-05-05
CN102084298A (zh) 2011-06-01
EP2288963B1 (en) 2013-08-21
KR101386353B1 (ko) 2014-04-16
EP2288963A1 (en) 2011-03-02
CN102084298B (zh) 2013-08-21
KR20110026420A (ko) 2011-03-15
US8537335B2 (en) 2013-09-17

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