CN102084298B - 包括傅立叶光学系统的照明系统 - Google Patents

包括傅立叶光学系统的照明系统 Download PDF

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Publication number
CN102084298B
CN102084298B CN200980125981XA CN200980125981A CN102084298B CN 102084298 B CN102084298 B CN 102084298B CN 200980125981X A CN200980125981X A CN 200980125981XA CN 200980125981 A CN200980125981 A CN 200980125981A CN 102084298 B CN102084298 B CN 102084298B
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China
Prior art keywords
lens
illuminator
fourier optics
entrance
fourier
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CN200980125981XA
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English (en)
Chinese (zh)
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CN102084298A (zh
Inventor
马库斯·施瓦布
迈克尔·莱
马库斯·德冈瑟
阿图尔·赫格尔
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Publication date
Priority claimed from DE200810023763 external-priority patent/DE102008023763A1/de
Priority claimed from DE200810035320 external-priority patent/DE102008035320A1/de
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of CN102084298A publication Critical patent/CN102084298A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
  • Lenses (AREA)
CN200980125981XA 2008-05-09 2009-04-17 包括傅立叶光学系统的照明系统 Active CN102084298B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US5178508P 2008-05-09 2008-05-09
US61/051,785 2008-05-09
DE102008023763.9 2008-05-09
DE200810023763 DE102008023763A1 (de) 2008-05-09 2008-05-09 Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage, Mikrolithographie-Projektionsbelichtungsanlage mit einem solchen Beleuchtungssystem sowie Fourieroptiksystem
DE102008035320.5 2008-07-25
DE200810035320 DE102008035320A1 (de) 2008-07-25 2008-07-25 Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage, Mikrolithographie-Projektionsbelichtungsanlage mit einem solchen Beleuchtungssystem sowie Fourieroptiksystem
PCT/EP2009/002824 WO2009135586A1 (en) 2008-05-09 2009-04-17 Illumination system comprising a fourier optical system

Publications (2)

Publication Number Publication Date
CN102084298A CN102084298A (zh) 2011-06-01
CN102084298B true CN102084298B (zh) 2013-08-21

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CN200980125981XA Active CN102084298B (zh) 2008-05-09 2009-04-17 包括傅立叶光学系统的照明系统

Country Status (6)

Country Link
US (1) US8537335B2 (enExample)
EP (1) EP2288963B1 (enExample)
JP (1) JP5238879B2 (enExample)
KR (1) KR101386353B1 (enExample)
CN (1) CN102084298B (enExample)
WO (1) WO2009135586A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011078231A1 (de) 2010-07-21 2012-01-26 Carl Zeiss Smt Gmbh Ortsauflösende Lichtmodulationseinrichtung sowie Beleuchtungssystem mit ortsauflösender Lichtmodulationseinrichtung
US10222781B2 (en) * 2010-12-17 2019-03-05 Deckel Maho Pfronten Gmbh Apparatus for monitoring and providing visual representations of the operating conditions of machine tool parameters
US8546246B2 (en) * 2011-01-13 2013-10-01 International Business Machines Corporation Radiation hardened transistors based on graphene and carbon nanotubes
NL2008009A (en) * 2011-02-02 2012-08-06 Asml Netherlands Bv Illumination system, lithographic apparatus and method.
DE102011076436B4 (de) 2011-05-25 2015-08-13 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
DE102011086949A1 (de) 2011-11-23 2013-05-23 Carl Zeiss Smt Gmbh Beleuchtungs- und Verlagerungsvorrichtung für eine Projektionsbelichtungsanlage
WO2014073548A1 (ja) * 2012-11-07 2014-05-15 株式会社ニコン 空間光変調光学系、照明光学系、露光装置、およびデバイス製造方法
US9091650B2 (en) * 2012-11-27 2015-07-28 Kla-Tencor Corporation Apodization for pupil imaging scatterometry
DE102013212613B4 (de) * 2013-06-28 2015-07-23 Carl Zeiss Sms Gmbh Beleuchtungsoptik für ein Metrologiesystem sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik
CN110431487B (zh) * 2017-03-17 2021-08-10 株式会社尼康 照明装置及方法、曝光装置及方法、以及元件制造方法
US10139604B2 (en) * 2017-04-04 2018-11-27 Raytheon Company Compact anamorphic objective lens assembly
DE102017210162A1 (de) 2017-06-19 2017-08-17 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithographie
WO2021011637A1 (en) * 2019-07-15 2021-01-21 Arizona Board Of Regents On Behalf Of The University Of Arizona Complex diversity for accurate phase retrieval with single-shot acquisition
CN115127482B (zh) * 2022-08-31 2023-06-16 立臻精密智造(昆山)有限公司 角度测量系统
CN116414010B (zh) * 2023-04-06 2024-04-26 上海镭望光学科技有限公司 一种自由光瞳产生装置及其产生自由光瞳照明的方法
CN117031695B (zh) * 2023-08-21 2024-02-09 东莞锐视光电科技有限公司 光刻镜头装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0535564A1 (en) * 1991-09-30 1993-04-07 Matsushita Electric Industrial Co., Ltd. Fourier transform lens assembly and optical information processor employing same
JP2000106339A (ja) * 1998-09-28 2000-04-11 Canon Inc 投影露光装置及びデバイスの製造方法
EP1522893A2 (en) * 2003-10-06 2005-04-13 Canon Kabushiki Kaisha Illumination optical system and exposure apparatus having the same
CN1879062A (zh) * 2003-09-12 2006-12-13 卡尔蔡司Smt股份公司 用于微光刻投影曝光设备的照明系统

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10123418A (ja) * 1996-10-17 1998-05-15 Ricoh Co Ltd 前絞り２群ズームレンズ
JP3752356B2 (ja) * 1997-04-09 2006-03-08 オリンパス株式会社 実体顕微鏡
DE19837135C5 (de) * 1997-09-29 2016-09-22 Carl Zeiss Meditec Ag Afokales Zoomsystem
DE10012326A1 (de) 2000-03-14 2001-09-20 Philips Corp Intellectual Pty Flüssigkristall-Farbbildschirm
CN102645851B (zh) 2003-03-31 2015-11-25 Asml荷兰有限公司 照明源和掩模优化
JP4717813B2 (ja) * 2003-09-12 2011-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光設備のための照明系
JPWO2005062350A1 (ja) * 2003-12-19 2008-04-17 株式会社ニコン 光束変換素子、露光装置、照明光学系及び露光方法
DE102006030757A1 (de) * 2005-07-18 2007-02-01 Carl Zeiss Smt Ag Polarisationsoptimiertes Beleuchtungssystem
JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0535564A1 (en) * 1991-09-30 1993-04-07 Matsushita Electric Industrial Co., Ltd. Fourier transform lens assembly and optical information processor employing same
JP2000106339A (ja) * 1998-09-28 2000-04-11 Canon Inc 投影露光装置及びデバイスの製造方法
CN1879062A (zh) * 2003-09-12 2006-12-13 卡尔蔡司Smt股份公司 用于微光刻投影曝光设备的照明系统
EP1522893A2 (en) * 2003-10-06 2005-04-13 Canon Kabushiki Kaisha Illumination optical system and exposure apparatus having the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2000-106339A 2000.04.11

Also Published As

Publication number Publication date
JP5238879B2 (ja) 2013-07-17
KR20110026420A (ko) 2011-03-15
EP2288963A1 (en) 2011-03-02
WO2009135586A1 (en) 2009-11-12
KR101386353B1 (ko) 2014-04-16
US20110102758A1 (en) 2011-05-05
CN102084298A (zh) 2011-06-01
US8537335B2 (en) 2013-09-17
JP2011521445A (ja) 2011-07-21
EP2288963B1 (en) 2013-08-21

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