JP5232261B2 - 電界効果トランジスタ及びその製造方法 - Google Patents
電界効果トランジスタ及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000002353 field-effect transistor method Methods 0.000 title 1
- 239000010408 film Substances 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 35
- 230000005669 field effect Effects 0.000 claims description 29
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 27
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 11
- 238000005121 nitriding Methods 0.000 claims description 11
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 3
- 150000002831 nitrogen free-radicals Chemical class 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 52
- 238000000034 method Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 229910006137 NiGe Inorganic materials 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000037230 mobility Effects 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000005204 segregation Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 125000004434 sulfur atom Chemical group 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910005898 GeSn Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
図1は、第1の実施形態に係わる電界効果トランジスタの素子構造を示す断面図である。
図4は、第2の実施形態に係わる電界効果トランジスタの製造工程を示す断面図である。なお、図1と同一部分には同一符号を付して、その詳しい説明は省略する。
図5は、第3の実施形態に係わる電界効果トランジスタの素子構造を示す断面図である。なお、図1と同一部分には同一符号を付して、その詳しい説明は省略する。
なお、本発明は上述した各実施形態に限定されるものではない。
11…素子分離構造(STI)
20…ゲート絶縁膜
21…GeO2 層
22…LaAlO3 高誘電体絶縁膜
25…窒素含有領域(Geの酸窒化膜)
30…ゲート電極
31…金属酸化膜
41…ハードマスク
42…ゲート側壁絶縁膜
50…ソース/ドレイン領域
51…エクステンション拡散層
52…ソース/ドレイン拡散層
53…NiGe合金層
55…Ni膜
58…S偏析領域
61…層間絶縁膜
62…金属配線
71…絶縁膜
72…Ge層
75…Si基板
76…Ge層
81…SiGe層
82…歪みGe層
85…Ge基板
86…歪みSiGe層
Claims (11)
- Geを含む基板上の一部に設けられた、少なくともGeO2 層を含むゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
前記ゲート電極下のチャネル領域を挟んで前記基板に設けられたソース/ドレイン領域と、
前記ゲート絶縁膜の両側部に形成された窒素含有領域と、
を具備したことを特徴とする電界効果トランジスタ。 - 前記ゲート絶縁膜は、前記GeO2 層と高誘電体絶縁膜との積層構造であることを特徴とする請求項1記載の電界効果トランジスタ。
- 前記窒素含有領域は、Geの酸窒化膜であることを特徴とする請求項1又は2に記載の電界効果トランジスタ。
- 前記Geを含む基板は、Ge基板であることを特徴とする請求項1乃至3の何れかに記載の電界効果トランジスタ。
- 前記Geを含む基板は、Ge基板上に歪みSiGe層が形成されたものであることを特徴とする請求項1乃至3の何れかに記載の電界効果トランジスタ。
- 前記Geを含む基板は、Si基板上に形成された格子緩和SiGe層上に歪みGe層が形成されたものであることを特徴とする請求項1乃至3の何れかに記載の電界効果トランジスタ。
- 前記Geを含む基板は、絶縁膜上にGe薄膜が形成されたものであることを特徴とする請求項1乃至3の何れかに記載の電界効果トランジスタ。
- 前記Geを含む基板は、Si基板上にGe薄膜が形成されたものであることを特徴とする請求項1乃至3の何れかに記載の電界効果トランジスタ。
- Geを含む基板上に、少なくともGeO2 層を含むゲート絶縁膜とゲート電極を順次積層する工程と、
前記ゲート電極及び前記ゲート絶縁膜を選択的にエッチングすることにより、ゲート積層構造部を形成する工程と、
前記ゲート積層構造部の両側面に露出した前記ゲート絶縁膜の表面を窒化処理することにより、窒素含有領域を形成する工程と、
前記ゲート積層構造部の両側にソース/ドレイン領域を形成する工程と、
を含むことを特徴とする電界効果トランジスタの製造方法。 - Geを含む基板上に、少なくともGeO2 層を含むゲート絶縁膜とゲート電極を順次積層する工程と、
前記ゲート電極を選択的にエッチングすることにより、ゲート積層構造部を形成する工程と、
前記ゲート積層構造部の形成により露出した前記ゲート絶縁膜を窒化処理する工程と、
前記ゲート絶縁膜を窒化処理した後に、前記ゲート電極をマスクにして前記ゲート絶縁膜を選択的にエッチングする工程と、
前記ゲート積層構造部の両側にソース/ドレイン領域を形成する工程と、
を含むことを特徴とする電界効果トランジスタの製造方法。 - 前記ゲート絶縁膜を窒化処理する工程として、前記ゲート絶縁膜をプラズマ中に曝す、又は窒素ラジカル中に曝すことを特徴とする請求項9又は10に記載の電界効果トランジスタの製造方法。
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