JP5230385B2 - マイクロマシン - Google Patents

マイクロマシン Download PDF

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Publication number
JP5230385B2
JP5230385B2 JP2008310367A JP2008310367A JP5230385B2 JP 5230385 B2 JP5230385 B2 JP 5230385B2 JP 2008310367 A JP2008310367 A JP 2008310367A JP 2008310367 A JP2008310367 A JP 2008310367A JP 5230385 B2 JP5230385 B2 JP 5230385B2
Authority
JP
Japan
Prior art keywords
electrode
wiring
auxiliary wiring
sacrificial layer
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008310367A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009158485A5 (enExample
JP2009158485A (ja
Inventor
真弓 三上
小波 泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008310367A priority Critical patent/JP5230385B2/ja
Publication of JP2009158485A publication Critical patent/JP2009158485A/ja
Publication of JP2009158485A5 publication Critical patent/JP2009158485A5/ja
Application granted granted Critical
Publication of JP5230385B2 publication Critical patent/JP5230385B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00166—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/58—Electric connections to or between contacts; Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0052—Special contact materials used for MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0052—Special contact materials used for MEMS
    • H01H2001/0057—Special contact materials used for MEMS the contact materials containing refractory materials, e.g. tungsten
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
JP2008310367A 2007-12-05 2008-12-05 マイクロマシン Expired - Fee Related JP5230385B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008310367A JP5230385B2 (ja) 2007-12-05 2008-12-05 マイクロマシン

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007314456 2007-12-05
JP2007314456 2007-12-05
JP2008310367A JP5230385B2 (ja) 2007-12-05 2008-12-05 マイクロマシン

Publications (3)

Publication Number Publication Date
JP2009158485A JP2009158485A (ja) 2009-07-16
JP2009158485A5 JP2009158485A5 (enExample) 2012-01-12
JP5230385B2 true JP5230385B2 (ja) 2013-07-10

Family

ID=40720438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008310367A Expired - Fee Related JP5230385B2 (ja) 2007-12-05 2008-12-05 マイクロマシン

Country Status (2)

Country Link
US (2) US7999335B2 (enExample)
JP (1) JP5230385B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5100670B2 (ja) 2009-01-21 2012-12-19 株式会社半導体エネルギー研究所 タッチパネル、電子機器
US8956903B2 (en) 2010-06-25 2015-02-17 International Business Machines Corporation Planar cavity MEMS and related structures, methods of manufacture and design structures
JP2012195829A (ja) 2011-03-17 2012-10-11 Seiko Epson Corp 発振回路
JP2012222718A (ja) 2011-04-13 2012-11-12 Seiko Epson Corp 発振器
US8912547B2 (en) 2012-01-20 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and semiconductor device
JP2013230523A (ja) 2012-04-27 2013-11-14 Toshiba Corp Ｍｅｍｓ素子
US9873833B2 (en) * 2014-12-29 2018-01-23 Versum Materials Us, Llc Etchant solutions and method of use thereof
JP7161529B2 (ja) 2018-06-08 2022-10-26 株式会社半導体エネルギー研究所 半導体装置
US11139134B2 (en) * 2019-04-23 2021-10-05 Qorvo Us, Inc. High isolation series switch
CN115571847B (zh) * 2022-09-23 2026-01-23 北京京东方技术开发有限公司 Mems器件及制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766280A (ja) 1993-08-30 1995-03-10 Toshiba Corp 半導体装置の製造方法
US7202497B2 (en) * 1997-11-27 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6396368B1 (en) 1999-11-10 2002-05-28 Hrl Laboratories, Llc CMOS-compatible MEM switches and method of making
US7256670B2 (en) 2002-08-26 2007-08-14 International Business Machines Corporation Diaphragm activated micro-electromechanical switch
US7560789B2 (en) * 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4587320B2 (ja) * 2005-06-30 2010-11-24 株式会社半導体エネルギー研究所 微小構造体、マイクロマシン、およびこれらの作製方法
TWI401803B (zh) 2005-06-30 2013-07-11 半導體能源研究所股份有限公司 微結構、微機械、有機電晶體、電氣設備、及其製造方法

Also Published As

Publication number Publication date
US20090145629A1 (en) 2009-06-11
JP2009158485A (ja) 2009-07-16
US20110281389A1 (en) 2011-11-17
US7999335B2 (en) 2011-08-16
US8470629B2 (en) 2013-06-25

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