JP5228843B2 - Semiconductor device mounting substrate and semiconductor device - Google Patents

Semiconductor device mounting substrate and semiconductor device Download PDF

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Publication number
JP5228843B2
JP5228843B2 JP2008303577A JP2008303577A JP5228843B2 JP 5228843 B2 JP5228843 B2 JP 5228843B2 JP 2008303577 A JP2008303577 A JP 2008303577A JP 2008303577 A JP2008303577 A JP 2008303577A JP 5228843 B2 JP5228843 B2 JP 5228843B2
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circuit board
formed
semiconductor element
plurality
element mounting
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JP2010129810A (en
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守 倉科
大輔 水谷
正輝 小出
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富士通株式会社
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Description

  The present invention relates to a semiconductor element mounting substrate and a semiconductor device.

  Recently, a technique for mounting a semiconductor element mounting substrate (BGA (Ball Grid Array) package) on which a semiconductor element (semiconductor chip) such as an LSI is mounted on a circuit board such as a mother board has been proposed.

An electrode formed on the semiconductor element is connected to an electrode formed on one surface of the semiconductor element mounting substrate by solder bumps or the like. The electrode formed on the other surface of the semiconductor element mounting board is connected to an electrode of a circuit board such as a mother board by another solder bump. The electrode of the semiconductor element and the electrode of a circuit board such as a mother board are electrically connected to each other via an electrode, wiring, or the like formed on the semiconductor element mounting board.
JP-A-9-17827 JP-A-11-284097 JP 2007-266643 A Japanese Patent No. 4145301 JP 2006-324642 A

  However, in the proposed semiconductor element mounting substrate, the electrical connection between the semiconductor element mounting substrate and the semiconductor element may be defective due to deformation during heating.

  An object of the present invention is to provide a semiconductor element mounting substrate and a semiconductor device capable of realizing improvement in reliability.

  According to one aspect of the embodiment, a circuit board having a plurality of electrodes formed on one surface, and a plurality of through holes provided on the one surface side of the circuit board and corresponding to the plurality of electrodes, respectively. There is provided a substrate for mounting a semiconductor element, comprising a plate formed and made of a material having a smaller coefficient of thermal expansion than the circuit board.

  According to another aspect of the embodiment, a circuit board having a plurality of electrodes formed on one surface, and a plurality of through-holes provided on the one surface side of the circuit board and corresponding to the plurality of electrodes, respectively. And a semiconductor element mounting board having a plate made of a material having a smaller coefficient of thermal expansion than the circuit board, and a semiconductor mounted on the other surface side opposite to the one surface of the circuit board A semiconductor device including an element is provided.

  According to the disclosed semiconductor element mounting substrate and semiconductor device, a plurality of electrodes formed on one surface of the circuit board are provided on one surface of the circuit board, which is the surface opposite to the surface on which the semiconductor elements are mounted. A plate made of a material having a smaller coefficient of thermal expansion than that of the circuit board, in which a plurality of corresponding through holes are formed, is provided. Since a plate made of a material having a lower coefficient of thermal expansion than the circuit board is provided on the entire surface of the circuit board except for the portion where the electrodes are formed, it is possible to sufficiently suppress deformation of the circuit board. be able to. In addition, since the plurality of through holes corresponding to the plurality of electrodes are formed in a plate made of a material having a smaller coefficient of thermal expansion than the circuit board, the electrodes formed on one surface of the circuit board and the other circuit board The formed electrodes can be connected by solder bumps formed in the through holes. According to the disclosed semiconductor element mounting substrate and semiconductor device, stress applied between the semiconductor element and the circuit board can be suppressed, and the reliability of electrical connection between the semiconductor element and the circuit board can be improved. Therefore, it is possible to provide a semiconductor element mounting substrate and a semiconductor device that can realize improved reliability.

[One Embodiment]
A semiconductor element mounting substrate and a semiconductor device according to an embodiment will be described with reference to FIGS.

(Semiconductor element mounting board)
First, the semiconductor element mounting substrate according to the present embodiment will be explained with reference to FIG. FIG. 1 is a cross-sectional view and a side view showing the semiconductor element mounting substrate according to the present embodiment. FIG. 1B is a side view showing the semiconductor element mounting substrate according to the present embodiment, and FIG. 1A is a cross-sectional view corresponding to a part of FIG. In FIG. 1B, the electrode 14 formed on the upper surface side of the circuit board 10 is omitted.

  As the circuit board 10, a glass epoxy board having a multilayer wiring structure (not shown) is used. The glass epoxy substrate is formed by impregnating glass fiber with an epoxy resin. The size of the circuit board 10 is about 47.5 mm × 47.5 mm × 0.93 mm, for example.

  The semiconductor element mounting board 2 according to the present embodiment is mounted on another circuit board 4 (see FIG. 8) such as a mother board. The lower surface side of the circuit board 10 in FIG. 1 is, for example, the side facing the other circuit board 4.

  A plurality of electrodes (electrode pads) 12 are formed on the lower surface side of the circuit board 10. The electrode 12 formed on the lower surface side of the circuit board 10 is formed to correspond to the electrode 36 (see FIG. 8) of another circuit board 6 (see FIG. 8). The size of the electrode 12 formed on the lower surface side of the circuit board 10 is, for example, about 400 μmφ. The pitch of the electrodes 12 formed on the lower surface side of the circuit board 10 is, for example, about 1 mm. The thickness of the electrode 12 is about 10 μm, for example.

  On the semiconductor element mounting substrate 2 according to the present embodiment, for example, a semiconductor element (semiconductor chip) 6 such as an LSI (see FIG. 8) is mounted. The upper surface side of the circuit board 10 in FIG. 1 is the side on which the semiconductor element 6 is mounted. As the substrate of the semiconductor element 6, for example, a semiconductor substrate such as a silicon substrate is used. The thermal expansion coefficient of the semiconductor substrate used for the semiconductor element 6 is smaller than the thermal expansion coefficient of the circuit board 10.

  A plurality of electrodes (electrode pads) 14 are formed on the upper surface side of the circuit board 10. The electrodes 14 formed on the upper surface side of the circuit board 10 are formed so as to correspond to the electrodes 30 (see FIG. 8) of the semiconductor element 6 (see FIG. 8) mounted on the circuit board 10. The size of the electrode 14 formed on the upper surface side of the circuit board 10 is, for example, about 500 μmφ. The pitch of the electrodes 12 formed on the upper surface side of the circuit board 10 is about 200 μm, for example. The thickness of the electrode 14 is, for example, about 10 μm. The size of the region where the semiconductor element 6 is mounted is, for example, about 15 mm × 15 mm.

  On the lower surface side of the circuit board 10, a rigid plate (stiffener, stiffener, reinforcing material) 16 is provided. The rigid plate 16 is bonded to the lower surface side of the circuit board 10 via an adhesive layer 18 or the like. The overall size of the rigid plate 16 is, for example, about 47.5 mm × 47.5 mm × 0.3 mm. As the material of the rigid plate 16, a material having a smaller thermal expansion coefficient than that of the circuit board 10 is used. For example, a metal plate is used as the rigid plate 16. As the material of the metal plate 16, for example, a material containing copper is used. Here, for example, a copper plate is used as the rigid plate 16.

  A plurality of through holes (openings) 20 are formed in the rigid plate 16. The through hole 20 is formed at a location corresponding to the electrode 12 formed on the lower surface side of the circuit board 10. The diameter of the through hole 20 increases as the distance from the electrode 12 formed on the circuit board 10 increases. The diameter of the through hole 20 on the upper surface side of the rigid plate 16 is, for example, about 0.55 mm. The diameter of the through hole 20 on the lower surface side of the rigid plate 16 is, for example, about 0.65 mm.

  An insulating layer 22 is formed on one surface side (upper surface side) of the rigid plate 16. An insulating layer 24 is formed on the other surface side of the rigid plate 16 and in the through hole 20. As a material of the insulating layers 22 and 24, for example, a thermosetting resin sheet is used. As a material of the thermosetting resin sheets 22 and 24, for example, an epoxy resin is used. More specifically, for example, a thermosetting epoxy resin sheet (product name: GX-13) manufactured by Ajinomoto Fine Techno Co., Ltd. is used as the material for the insulating layers 22 and 24. The thickness of the insulating layers 22 and 24 is about 50 μm, for example. The reason why the surface of the rigid plate 16 is covered with these insulating layers 22 and 24 is that the solder bumps 26 formed on the lower surface side of the circuit board 10 are electrically short-circuited with each other via the rigid plate 16. This is to prevent it.

  An adhesive layer 18 is formed on one surface side (upper surface side) of the rigid plate 16 on which the insulating layers 22 and 24 are formed. The adhesive layer 18 is for fixing the rigid plate 16 to one surface (lower surface side) of the circuit board 10. As the adhesive layer 18, for example, a thermosetting adhesive sheet (bonding sheet) is used. More specifically, for example, a bonding sheet (product name: FTA-860) manufactured by Kyocera Chemical Co., Ltd. is used as the material of the adhesive layer 18. The thickness of the adhesive layer 18 is, for example, about 20 μm.

  In locations where the through holes 20 are formed in the rigid plate 16, through holes (openings) 28 are formed in the insulating layers 22 and 24 and the adhesive layer 18. The through hole 28 is formed to correspond to the electrode 12 formed on the lower surface side of the circuit board 10. The diameter of the through hole 28 is, for example, about 0.4 mm.

  The rigid plate 16 whose surface is covered with the insulating layers 22 and 24 is fixed to one surface (lower surface side) of the circuit board 10 using an adhesive layer 18.

  Thus, the rigid plate 16 in which the plurality of through holes 20 corresponding to the plurality of electrodes 12 formed on one surface of the circuit board 10 is formed is provided on one surface of the circuit board 10. According to the present embodiment, since the rigid plate 16 is provided on the entire surface of the circuit board 10 excluding the portion where the electrode 12 is formed, the circuit board 10 is deformed when heat treatment is performed. Can be sufficiently suppressed. Since the deformation of the circuit board 10 can be suppressed, the stress applied between the semiconductor element 6 (see FIG. 8) and the circuit board 10 can be suppressed, and the electrical connection between the semiconductor element 6 and the circuit board 10 can be suppressed. Connection reliability can be improved.

  A solder bump (solder ball) 26 is formed on the lower surface side of the electrode 12 formed on the lower surface side of the circuit board 10. The solder bump 26 can be formed, for example, by printing a solder paste in which a solder ball is impregnated with a flux. As the solder ball, for example, a solder ball manufactured by Senju Metal Industry Co., Ltd. (product name: Sparkle Ball (S type)) or the like can be used. As the flux, for example, a flux (product name: Deltalux 523H) manufactured by Senju Metal Industry Co., Ltd. can be used. The upper part of the solder bump 26 is located in the through hole 20, and the lower part of the solder bump 26 is located below the lower surface of the rigid plate 16. That is, the solder bump 26 is formed so as to protrude from the inside of the through hole 20 to the outside of the through hole 20.

  Since the through hole 20 corresponding to the electrode 12 is formed in the rigid plate 16, the electrical connection between the electrode 12 formed on one surface of the circuit board 10 and the electrode 36 formed on the other circuit board 4 is established. It can be secured by the solder bump 26 formed in the through hole 20 (see FIG. 8).

  Thus, the semiconductor element mounting substrate 2 according to the present embodiment is formed.

  The semiconductor element mounting substrate according to the present embodiment is provided with a rigid plate 16 on one surface side of the circuit substrate 10, and a plurality of electrodes 12 corresponding to the plurality of electrodes 12 formed on one surface of the circuit substrate 16. The main feature is that the through hole 20 is formed in the rigid plate 16. According to the present embodiment, since the rigid plate 16 is provided on the entire surface of one side of the circuit board 10 excluding the portion where the electrode 12 is formed, the deformation of the circuit board 10 is sufficiently suppressed. be able to. Since the deformation of the circuit board 10 can be suppressed, the stress applied between the semiconductor element 6 and the circuit board 10 can be suppressed, and the reliability of the electrical connection between the semiconductor element 6 and the circuit board 10 is improved. It becomes possible to do. Therefore, according to the present embodiment, it is possible to provide a semiconductor element mounting substrate that can realize improvement in reliability. In addition, since the plurality of through holes 20 corresponding to the plurality of electrodes 12 are formed in the rigid plate 16, the electrodes formed on one surface of the circuit board 10 and the electrodes 36 formed on the other circuit board 4 These electrical connections can be secured by the solder bumps 26 formed in the through holes 20 (see FIG. 8).

(Manufacturing method of semiconductor element mounting substrate)
Next, the method for manufacturing the semiconductor element mounting substrate according to the present embodiment will be explained with reference to FIGS. 2 to 6 are process diagrams showing the method of manufacturing the semiconductor element mounting substrate according to the present embodiment. 2A to 3B are cross-sectional views. 4B is a perspective view, and FIG. 4A is a cross-sectional view corresponding to a part of FIG. 4B. FIG. 5B is a perspective view, and FIG. 5A is a cross-sectional view corresponding to a part of FIG. 6B is a side view, and FIG. 6A is a cross-sectional view corresponding to a part of FIG. 6B. In FIG. 4B, FIG. 5B, and FIG. 6B, the electrode 14 formed on the upper surface side of the circuit board 10 is omitted.

  First, as shown in FIG. 2A, a rigid plate (stiffener) 16 is prepared. For example, a metal plate is used as the rigid plate 16. The material of the metal plate 16 is, for example, a material containing copper. Here, for example, a copper plate is used as the rigid plate 16. The size of the rigid plate 16 is, for example, about 60 mm × 60 mm × 0.3 mm.

  Next, the through hole 20 is formed in the rigid plate 16 using, for example, a micro drill. The through hole 20 is formed so as to correspond to the electrode 12 (see FIG. 1) formed on the lower surface side of the circuit board 10. When the through hole 20 is formed, a micro drill (not shown) whose diameter gradually decreases toward the tip is used. By forming the through hole 20 in this way, the through hole 20 can be formed so that the diameter gradually increases from the upper surface side to the lower surface side of the rigid plate 16.

  Next, as shown in FIG. 2C, for example, thermosetting resin sheets 22 and 24 are disposed on the upper surface side and the lower surface side of the rigid plate 16, respectively. The thermosetting resin sheets 22 and 24 become the insulating layers 22 and 24 (see FIG. 1). As a material of the thermosetting resin sheets 22 and 24, for example, an epoxy resin is used. More specifically, as the thermosetting resin sheets 22 and 24, for example, a thermosetting epoxy resin sheet (product name: GX-13) manufactured by Ajinomoto Fine Techno Co., Ltd. is used. The thickness of the thermosetting resin sheets 22 and 24 is, for example, about 50 μm.

  Next, the thermosetting resin sheets 22 and 24 are attached to the rigid plate 16 by, for example, a laminating method.

  Next, the thermosetting resin sheets 22 and 24 are cured by performing a heat treatment. The heat treatment temperature is set to 180 ° C., for example. Thus, the insulating layers 22 and 24 are formed so as to cover the surface of the rigid plate 16 (see FIG. 2D).

  Next, as shown in FIG. 3A, for example, a thermosetting adhesive sheet (bonding sheet) 18 is disposed on the rigid plate 16 covered with the insulating layers 22 and 24. The thermosetting adhesive sheet 18 becomes the adhesive layer 18 (see FIG. 1). As a material of the thermosetting adhesive sheet 18, for example, a bonding sheet (product name: FTA-860) manufactured by Kyocera Chemical Co., Ltd. is used. The thickness of the thermosetting adhesive sheet 18 is, for example, about 20 μm.

  Next, the thermosetting adhesive sheet 18 is pasted on the insulating layer 22 by, for example, a laminating method. Thus, the adhesive layer 18 is formed on the insulating layer 22.

  Next, the through-hole 28 is formed in the insulating layers 22 and 24 and the adhesive layer 18 at the place where the through-hole 20 is formed, for example, using a micro drill. The diameter of the through hole 28 is, for example, about 0.4 mm.

  Next, a circuit board 10 having electrodes 12 formed on the lower surface side and the upper surface side is prepared (see FIG. 4). As the circuit board 10, for example, a glass epoxy board having a multilayer wiring structure (not shown) is used. A semiconductor element 6 such as an LSI (see FIG. 8) is mounted on the upper surface side of the circuit board 10. Therefore, an electrode 14 is formed on the upper surface side of the circuit board 10 so as to correspond to the electrode 30 (see FIG. 8) of the semiconductor element 6. The semiconductor element mounting board 2 is mounted on another circuit board 4 such as a mother board. Therefore, the electrode 12 is formed on the lower surface side of the circuit board 10 so as to correspond to the electrode 36 (see FIG. 8) of the other circuit board 4.

  Next, the circuit board 10 is disposed on the rigid plate 16 (see FIG. 5). At this time, the lower surface side of the circuit board 10 is brought into contact with the adhesive layer 18 formed on the rigid plate 16. Further, the position of the electrode 12 formed on the lower surface side of the circuit board 10 is matched with the position of the through hole 28 formed in the insulating layers 22 and 24 and the adhesive layer 18.

  Next, by applying pressure while heating, the rigid plate 16 covered with the insulating layers 22 and 24 and the circuit board 10 are bonded by the adhesive layer 18 (hot pressing). The heating temperature is about 170 ° C., for example. The applied pressure is, for example, about 2 MPa.

  Next, a solder ball 26 is mounted on the electrode 12 formed on the lower surface side of the circuit board 10, and then heat treatment is performed, so that solder bumps (solder) are formed on the electrode 12 formed on the lower surface side of the circuit board 10. Ball) 26 is formed (see FIG. 6). The solder bump 26 can be formed, for example, by printing a solder paste in which a solder ball is impregnated with a flux. As the solder ball, for example, a solder ball manufactured by Senju Metal Industry Co., Ltd. (product name: Sparkle Ball (S type)) or the like can be used. As the flux, for example, a flux (product name: Deltalux 523H) manufactured by Senju Metal Industry Co., Ltd. can be used. Since the through hole 20 is formed so that the diameter increases as the distance from the electrode 12 formed on the lower surface side of the circuit board 10 increases, the solder bumps 26 are reliably placed on the electrode 12 formed on the circuit board 10. Can be formed.

  Thus, the semiconductor element mounting substrate 2 according to the present embodiment is formed.

(Semiconductor device)
Next, the semiconductor device using the semiconductor element mounting substrate according to the present embodiment will be explained with reference to FIGS. FIG. 7 is a sectional view and a side view showing the semiconductor device using the semiconductor element mounting substrate according to the present embodiment. FIG. 7B is a side view, and FIG. 7A is a cross-sectional view corresponding to a part of FIG. 7B. FIG. 8 is a side view showing the semiconductor device using the semiconductor element mounting substrate according to the present embodiment. In FIG. 7B, the electrode 14 formed on the upper surface side of the circuit board 10 is omitted.

  As shown in FIG. 7, a semiconductor element 6 such as an LSI is mounted on the semiconductor element mounting substrate 2. The electrode 30 of the semiconductor element 6 is electrically connected to the electrode 14 of the semiconductor element mounting substrate 2 via the solder bump 32. The diameter of the solder bump 32 is, for example, about 0.1 mm.

  When the semiconductor element 6 on which the solder bumps 32 are formed is mounted on the semiconductor element mounting substrate 2, a heat treatment (reflow) is performed to melt the solder bumps 32. In addition, even when the semiconductor device according to the present embodiment is actually used, heat is applied to the semiconductor device or heat is generated from the semiconductor element 6. According to the present embodiment, since the rigid plate 16 is provided on the entire surface of the circuit board 10 excluding the portion where the electrode 12 is formed, the semiconductor element 6 is mounted on the semiconductor element mounting board 2. When the semiconductor device is used or when the semiconductor device is actually used, the deformation of the circuit board 10 can be sufficiently suppressed. Since deformation of the circuit board 10 can be suppressed, stress applied between the semiconductor element 6 (see FIG. 8) and the circuit board 10 can be suppressed, and electrical connection between the semiconductor element 6 and the circuit board 10 can be suppressed. It becomes possible to improve the reliability.

  An underfill resin layer (sealing resin layer) 34 is formed between the semiconductor element 6 and the semiconductor element mounting substrate 2. As a material of the underfill resin layer 34, for example, a liquid sealing resin for semiconductor (product name: CRP-4075S3) manufactured by Sumitomo Bakelite Co., Ltd. is used.

  The semiconductor element mounting board 2 is mounted on another circuit board 4 such as a mother board. The electrode 12 formed on the lower surface side of the semiconductor element mounting board 2 is electrically connected to the electrode 36 of another circuit board 4 via the solder bump 26. When the semiconductor element mounting substrate 2 is mounted on another circuit substrate 4, heat treatment (reflow) is performed to melt the solder bumps 26. According to the present embodiment, since the rigid plate 16 is provided on the entire surface of the circuit board 10 excluding the place where the electrode 12 is formed, the semiconductor element mounting board 2 is placed on the other circuit board 4. It is possible to sufficiently suppress the circuit board 10 from being deformed during mounting or the like. Since deformation of the circuit board 10 can be suppressed, stress applied between the semiconductor element 6 and the circuit board 10 can be suppressed, and reliability of electrical connection between the semiconductor element 6 and the circuit board 10 can be suppressed. Can be improved.

  Thus, the semiconductor device according to the present embodiment is formed.

(Evaluation results)
The evaluation test results of the semiconductor element mounting substrate according to the present embodiment will be described. As an evaluation test, a thermal cycle test was performed. The conditions of the thermal cycle test were -10 ° C to 100 ° C and 300 cycles.

  9 and 10 are diagrams illustrating a semiconductor element mounting substrate according to a comparative example. In the semiconductor element mounting substrate according to the comparative example, first, as shown in FIG. 9A, a frame-shaped stiffener 116 in which an opening 120 is formed, a solder bump 126 (see FIG. 9C), and an electrode ( A circuit board 110 on which an unillustrated) is formed was prepared. Next, as shown in FIG. 9B, a semiconductor element mounting substrate 102 was formed by adhering a stiffener 116 on the circuit substrate 110. Next, as shown in FIG. 9C, a semiconductor element (LSI) 106 was mounted on the circuit board 110 in the opening 120 of the stiffener 116. The electrode of the semiconductor element mounting substrate 102 and the electrode of the semiconductor element 106 were connected via solder bumps (not shown).

  When a thermal cycle test was performed on the semiconductor device according to the comparative example, the electrical connection between the electrode (not shown) of the semiconductor element mounting substrate 102 and the electrode (not shown) of the semiconductor element 106 was opened. The failure was confirmed. In the semiconductor device according to the comparative example, it is considered that the circuit board 110 is largely deformed due to the difference in thermal expansion coefficient between the semiconductor element mounting substrate 102 and the semiconductor element 106 (see FIG. 10).

  On the other hand, when the thermal cycle test is performed on the semiconductor device according to the present embodiment shown in FIG. 8, the electrical connection between the electrode 14 of the semiconductor element mounting substrate 2 and the electrode 30 of the semiconductor element 6 is opened. There was no failure.

  From this, it can be seen that according to the present embodiment, a highly reliable semiconductor device can be obtained.

  As described above, in the semiconductor element mounting substrate and the semiconductor device according to the present embodiment, the rigid plate 16 is provided on one surface side of the circuit substrate 10, and the plurality of electrodes 12 formed on one surface of the circuit substrate 16. The plurality of through holes 20 corresponding to each of the above are mainly formed in the rigid plate 16. According to the present embodiment, since the rigid plate 16 is provided on the entire surface of one side of the circuit board 10 excluding the portion where the electrode 12 is formed, the deformation of the circuit board 10 is sufficiently suppressed. be able to. Since the deformation of the circuit board 10 can be suppressed, the stress applied between the semiconductor element 6 and the circuit board 10 can be suppressed, and the reliability of the electrical connection between the semiconductor element 6 and the circuit board 10 is improved. It becomes possible to do. Therefore, according to the present embodiment, it is possible to provide a semiconductor element mounting substrate that can realize improvement in reliability. In addition, since the plurality of through holes 20 corresponding to the plurality of electrodes 12 are formed in the rigid plate 16, the electrodes formed on one surface of the circuit board 10 and the electrodes 36 formed on the other circuit board 4 These electrical connections can be ensured by the solder bumps 26 formed in the through holes 20.

[Modified Embodiment]
The present invention is not limited to the above embodiment, and various modifications are possible.

  For example, although the case where the entire surface of the rigid plate 16 is covered with the insulating layers 22 and 24 has been described as an example, the entire surface of the rigid plate 16 may not be covered with the insulating layers 22 and 24. If the insulating layer is formed at least in the through hole 20 formed in the rigid plate 16, it is possible to prevent the solder bumps 26 from being electrically short-circuited with each other via the rigid plate 16.

  Moreover, although the said embodiment demonstrated to the example the case where a thermosetting resin sheet was used as a material of the insulating layers 22 and 24, the material of the insulating layers 22 and 24 is not limited to a thermosetting resin sheet. . Other insulating materials can be appropriately used as the material of the insulating layers 22 and 24.

  Moreover, although the said embodiment demonstrated to the example the case where the through-hole 20 was formed in the rigid board 16 using a micro drill, the formation method of the through-hole 20 is not limited to this. For example, the through hole 20 may be formed in the rigid plate 16 by wet etching or the like.

  Moreover, although the case where the material containing copper was used as an example for the material of the rigid board 16 was demonstrated in the said embodiment, the material of the rigid board 16 is not limited to this. For example, a material containing stainless steel, aluminum, silver or the like may be used as the material of the rigid plate 16.

  Moreover, although the case where an epoxy resin was used as an example of the material of the insulating layers 22 and 24 was demonstrated in the said embodiment, the material of the insulating layers 22 and 24 is not limited to an epoxy resin. For example, polyimide or the like may be used as the material for the insulating layers 22 and 24.

It is sectional drawing and the side view which show the board | substrate for semiconductor element mounting by one Embodiment. It is process drawing (the 1) which shows the manufacturing method of the board | substrate for semiconductor element mounting by one Embodiment. It is process drawing (the 2) which shows the manufacturing method of the board | substrate for semiconductor element mounting by one Embodiment. It is process drawing (the 3) which shows the manufacturing method of the board | substrate for semiconductor element mounting by one Embodiment. It is process drawing (the 4) which shows the manufacturing method of the board | substrate for semiconductor element mounting by one Embodiment. It is process drawing (the 5) which shows the manufacturing method of the board | substrate for semiconductor element mounting by one Embodiment. It is sectional drawing and the side view which show the semiconductor device using the board | substrate for semiconductor element mounting by one Embodiment. It is a side view which shows the semiconductor device using the board | substrate for semiconductor element mounting by one Embodiment. It is FIG. (1) which shows the board | substrate for semiconductor element mounting by a comparative example. It is FIG. (2) which shows the board | substrate for semiconductor element mounting by a comparative example.

Explanation of symbols

2 ... Semiconductor element mounting board 4 ... Other circuit board 6 ... Semiconductor element 10 ... Circuit board 12 ... Electrode 14 ... Electrode 16 ... Rigid plate 18 ... Adhesive layer 20 ... Through hole 22 ... Insulating layer 24 ... Insulating layer 26 ... Solder Bump 28 ... Through hole 30 ... Electrode 32 ... Solder bump 34 ... Underfill resin layer 36 ... Electrode 102 ... Semiconductor element mounting substrate 106 ... Semiconductor element 110 ... Circuit board 116 ... Stiffener 120 ... Opening 126 ... Solder bump

Claims (5)

  1. Is on one surface a plurality of first electrodes formed, a circuit board on which a plurality of second electrodes formed on the other surface is a surface opposite said one surface,
    A plate made of a material that is provided on the one surface side of the circuit board, has a plurality of through holes corresponding to the plurality of first electrodes, and has a smaller coefficient of thermal expansion than the circuit board ;
    Solder bumps formed on the plurality of second electrodes formed on the other surface of the circuit board;
    A semiconductor element mounting board , wherein a semiconductor element is connected to the plurality of second electrodes formed on the other surface of the circuit board via the solder bumps .
  2. The substrate for mounting a semiconductor element according to claim 1 ,
    A semiconductor element mounting substrate, further comprising solder bumps respectively formed on the plurality of first electrodes.
  3. In the semiconductor element mounting substrate according to claim 1 or 2 ,
    The diameter of the said through-hole is large as it leaves | separates from the said 1st electrode. The board | substrate for semiconductor element mounting characterized by the above-mentioned.
  4. The semiconductor element mounting substrate according to any one of claims 1 to 3 ,
    A substrate for mounting a semiconductor element, further comprising an insulating layer formed on at least the inner wall of the through hole.
  5. On one surface a plurality of first electrodes are formed, a circuit board on the other surface a plurality of second electrodes formed above a surface opposite to the one surface, the one of the circuit board A plurality of through holes provided on the surface side, each corresponding to the plurality of first electrodes, are formed on a plate made of a material having a smaller coefficient of thermal expansion than the circuit board, and formed on the other surface of the circuit board A semiconductor element mounting substrate having solder bumps formed on the plurality of second electrodes formed ;
    A semiconductor device connected to the plurality of second electrodes formed on the other surface of the circuit board via the solder bumps and mounted on the other surface side. .
JP2008303577A 2008-11-28 2008-11-28 Semiconductor device mounting substrate and semiconductor device Expired - Fee Related JP5228843B2 (en)

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JPWO2012029526A1 (en) * 2010-08-30 2013-10-28 住友ベークライト株式会社 Semiconductor package and semiconductor device
WO2012029579A1 (en) * 2010-08-30 2012-03-08 住友ベークライト株式会社 Semiconductor package and semiconductor device
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