JP2013165157A - Manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a fine re-wiring dealing with a narrow pitch at low costs in a semiconductor device where the re-wiring is provided on one surface side of a semiconductor chip and external connection is made through the re-wiring.SOLUTION: The other surface 12 side of a semiconductor chip 10 is supported by a first support material 100. Metal layers 30 for junction are printed to be formed in a second support material 200, and the metal layers 30 for the junction are transferred to electrode pads 20 through the second support material 200. Re-wiring pieces 40 are printed to be formed in a third support material 300, and the re-wiring pieces 40 are transferred to the metal layers 30 for the junction on the electrode pads 20 through the third support material 300. Then, the semiconductor chip 10 is sealed by a mold resin 60 so that the re-wiring pieces 40 are exposed from the mold resin 60. Next, bumps 50 are formed at portions of the re-wiring pieces 40 that are exposed from the mold resin 60.

Description

  The present invention relates to a method of manufacturing a semiconductor device in which rewiring is provided on one surface side of a semiconductor chip and external connection is performed via the rewiring.

  Generally, this type of semiconductor device is provided with a semiconductor chip in which one surface and the other surface are in a front-back relationship, an electrode pad disposed on one surface of the semiconductor chip, and one end side positioned on the electrode pad. And a rewiring that extends so that the other end side protrudes from the outline of the semiconductor chip, a metal layer for bonding between the electrode pad and one end side of the rewiring and connecting the two, and an external portion provided on the rewiring And a mold resin that seals the semiconductor chip so that the bumps are exposed.

  In such a method of manufacturing a semiconductor device, the bonding metal layer and the rewiring are manufactured by plating, or as described in Patent Document 1, a lead frame is used as the rewiring, and this is used as the bonding metal layer. By reconnecting, rewiring is formed.

JP-A-8-167629

  However, rewiring or plating for forming a metal layer is a wet process, which is not preferable for reducing the manufacturing cost. Further, when the rewiring is formed by the lead frame, the lead frame is patterned by etching. However, it is not preferable because the rewiring is made finer, that is, the pitch is narrowed due to the limitation of the plate thickness.

  The present invention has been made in view of the above problems, and in a semiconductor device in which rewiring is provided on one surface side of a semiconductor chip and external connection is performed via this rewiring, a fine pitch corresponding to a narrow pitch is provided. An object of the present invention is to enable easy rewiring to be formed at low cost.

  In order to achieve the above object, according to the first aspect of the present invention, there is provided a semiconductor chip (10) in which one surface (11) and the other surface (12) are in a front-back relationship, and an electrode pad disposed on one surface of the semiconductor chip (20), between the electrode pad and one end side of the rewiring, the rewiring (40) provided on the electrode pad and extending so that one end side is located on the electrode pad and the other end side protrudes from the outline of the semiconductor chip And a bonding metal layer (30) for connecting the two, a bump (50) provided on the rewiring and connected to the outside, and a mold resin (for sealing the semiconductor chip so that the bump is exposed) 60), the following steps are performed.

  That is, in the manufacturing method of the present invention, the chip support step of supporting the other surface side of the semiconductor chip on the one surface (101) of the first support material (100) and the one surface (201 of the second support material (200)). ), A first printing step of printing a bonding metal layer in a pattern corresponding to the arrangement pattern of the electrode pads, and one surface side of the semiconductor chip supported by the first support material, A first transfer step in which the second support material is removed from the bonding metal layer after the bonding metal layer is transferred to the electrode pad by being pressed against one surface side of the second support material; and a third support material (300) A second printing step of forming a rewiring on one surface (301), and pressing one surface side of the semiconductor chip supported by the first support material against one surface side of the third support material Rewiring the electrode A second transfer step in which the semiconductor chip is supported by the third support material by removing the first support material from the other surface side of the semiconductor chip after the transfer to the bonding metal layer on the lid, and the semiconductor chip Is sealed with a mold resin so that the rewiring is exposed from the mold resin on one side of the semiconductor chip, and the rewiring is supported by the mold resin on the other end of the rewiring. It is characterized in that a step, a removal step of removing the third support material from the rewiring, and a bump forming step of forming a bump in a portion of the rewiring that is exposed from the mold resin are performed.

  According to the manufacturing method of the present invention, the metal layer for bonding and the rewiring can be formed by printing and transfer which can be formed at a lower cost than plating and can form a finer pattern than lead frame etching. Can be formed at low cost.

  In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

1 is a diagram showing a schematic cross-sectional configuration of a semiconductor device according to a first embodiment of the present invention. FIG. 3 is a process diagram illustrating a method of manufacturing the semiconductor device according to the first embodiment, wherein (a) is a schematic cross-sectional view, and (b) is a schematic plan view illustrating one surface side of the semiconductor chip in (a). FIGS. 3A and 3B are process diagrams illustrating a manufacturing method following FIG. 2, in which FIG. 3A is a schematic cross-sectional view, and FIG. 3B is a schematic plan view illustrating one surface side of a semiconductor chip in FIG. FIG. 4 is a process diagram illustrating a manufacturing method subsequent to FIG. 3, in which (a) is a schematic cross-sectional view, and (b) is a schematic plan view illustrating one surface side of a semiconductor chip in (a). It is process drawing which shows the manufacturing method following FIG. 4, (a) is a schematic sectional drawing, (b) is a schematic plan view which shows the one surface side of the semiconductor chip in (a). FIGS. 6A and 6B are process diagrams illustrating a manufacturing method following FIG. 5, in which FIGS. 6A and 6B are schematic cross-sectional views, and FIG. 6C is a schematic plan view illustrating one surface side of the semiconductor chip in FIG. FIGS. 7A and 7B are process diagrams illustrating a manufacturing method subsequent to FIG. 6, where FIGS. 7A and 7B are schematic cross-sectional views, and FIG. 7C is a schematic plan view illustrating one surface side of a semiconductor chip in FIG. (A) is a schematic top view which shows the support state of the several semiconductor chip in the rewiring formation method by the conventional plating, (b) is a several semiconductor chip in the manufacturing method of the semiconductor device concerning the said 1st Embodiment. It is a schematic plan view which shows a support state. It is a figure which shows schematic sectional structure of the semiconductor device concerning 2nd Embodiment of this invention. It is process drawing which shows the principal part of the manufacturing method of the semiconductor device concerning the said 2nd Embodiment. It is a figure which shows schematic sectional structure of the semiconductor device concerning 3rd Embodiment of this invention. It is a figure which shows schematic sectional structure of the semiconductor device concerning 4th Embodiment of this invention. It is process drawing which shows the principal part of the manufacturing method of the semiconductor device concerning the said 4th Embodiment. It is a figure which shows schematic sectional structure of the semiconductor device concerning other embodiment of this invention. It is a figure which shows schematic sectional structure of the semiconductor device concerning other embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

(First embodiment)
The semiconductor device S1 according to the first embodiment of the present invention will be described with reference to FIG. The semiconductor device S1 is applied to, for example, a component of an ECU mounted on an automobile.

  The semiconductor device S1 of the present embodiment generally includes a semiconductor chip 10 in which the one surface 11 and the other surface 12 are in a front-back relationship, and a bonding metal layer is formed on the electrode pad 20 disposed on the one surface 11 of the semiconductor chip 10. The rewiring 40 is connected via the wiring 30, and the bump 50 for connection to the outside is connected to the rewiring 40, and the semiconductor chip 10 is sealed with the mold resin 60 so that the bump 50 is exposed. It will be.

  The semiconductor chip 10 is such that one surface 11 and the other surface 12 are in a front-back relationship. The semiconductor chip 10 is a plate-shaped member made of a semiconductor such as a silicon semiconductor, and the semiconductor chip 10 is formed by a semiconductor process. In the present embodiment, for example, the semiconductor chip 10 is configured as an IC chip, a sensor chip, a circuit chip, and the like, and typically has a rectangular plate shape.

  The electrode pad 20 is disposed on one surface 11 of the semiconductor chip 10 and is configured as an electrical extraction portion of the semiconductor chip 10. In the present embodiment, the electrode pad 20 is made of a conductive metal such as Cu (copper) or aluminum, and is formed by a method such as sputtering or vapor deposition.

  The bonding metal layer 30 is interposed between the electrode pad 20 and one end side of the rewiring 40, and connects the both 20 and 40. In the present embodiment, the bonding metal layer 30 is formed by printing using a metal paste and curing it, and is made of, for example, Cu or Ag.

  Here, the electrode pad 20 and the rewiring 40 are electrically connected via the bonding metal layer 30, but the electrode pad 20 and the rewiring 40 connected thereto are electrically connected. It may be one that does not make a general connection. In other words, the heat radiation may be performed from the electrode pad 20 through the rewiring 40 connected to the electrode pad 20, and an electric signal may not flow through the both.

  The rewiring 40 is configured as a wiring layer having one end side positioned on the electrode pad 20 via the bonding metal layer 40 and the other end side extending so as to protrude from the outline of the semiconductor chip 10. In the present embodiment, the rewiring 40 is formed by printing using a metal paste and curing it, and is made of a conductive metal such as Cu or Ag.

  Here, the rewiring 40 extends from the one end side on the electrode pad 20 side to the outline of the semiconductor chip 10 so that the electrode pad 20 of the semiconductor chip 10 having a narrow pitch can be easily connected to the outside. It is formed as follows.

  The bump 50 is provided on the rewiring 40 and connected to the outside. The bump 50 is formed by curing or baking a metal paste or using a solder ball method, and is made of a conductive material such as Cu, Ag, Au, or solder. Further, here, the bump 50 has a conical shape whose diameter decreases toward the outside.

  Here, between the electrode pad 20 and the bonding metal layer 30, between the bonding metal layer 30 and the rewiring 40, and between the rewiring 40 and the bump 50, there is a physical relationship between them. Contact is made, and a solid phase bond of metal is formed between the contacting members. Accordingly, the electrode pads 20 and the bonding metal layer 30 are connected, the bonding metal layer 30 and the rewiring 40, and the rewiring 40 and the bump 50 are connected.

  The mold resin 60 seals the other surface 12 side and the side surface of the semiconductor chip 10, so that the surface of the rewiring 40 opposite to the semiconductor chip 10 side and the bump 50 are formed from the mold resin 60. Exposed.

  In addition, on the one surface 11 side of the semiconductor chip 10, the space between each rewiring 40 is filled with a mold resin 60 and sealed. The other end side of the rewiring 40 that protrudes from the outline of the semiconductor chip 10 is supported by the mold resin 60. The mold resin 60 is made of a mold material such as an epoxy resin, and is molded by using a mold forming method, a dispensing method, or the like.

  In such a semiconductor device S1, electrical connection between the semiconductor chip 10 and the outside is performed via the bumps 50 by connecting the bumps 50 to an external wiring member, a wiring board or the like (not shown). It is like that.

  Next, with reference to FIGS. 2 to 7, a method for manufacturing the semiconductor device S1 of the present embodiment will be described. In addition, although this manufacturing method may perform each following process about one semiconductor chip 10, here, the example which processes the several semiconductor chip 10 collectively is given. . First, in this manufacturing method, the semiconductor chip 10 is prepared by forming the semiconductor chip 10 having the electrode pads 20 by a semiconductor process.

  Then, as shown in FIG. 2, in the chip support step, the other surface 12 side of the semiconductor chip 10 is supported on the one surface 101 of the first support material 100. Here, a plurality of semiconductor chips 10 cut out from the wafer are supported by the first support material 100.

  The first support material 100 is made of a plate having adhesiveness on one surface 101 on which the semiconductor chip 10 is supported, and the semiconductor chip 10 is fixed to the first support material 100 by this adhesion force. Here, this adhesion force is reduced by heating, ultraviolet irradiation, or the like in a subsequent process, and thereby the semiconductor chip 10 is removed from the first support material 100.

  On the other hand, as shown in FIG. 2, in the first printing process, the bonding metal layer 30 is printed on the one surface 201 of the second support material 200 in a pattern corresponding to the arrangement pattern of the electrode pads 20. Form.

  Here, this 2nd support material 200, the 3rd support material 300 mentioned later, and the 4th support material 400 consist of plates, such as glass and a silicon | silicone, for example, These 2nd-4th support material 200 is each. The one surface 201, 301, 401 on which printing is performed in .about.400 is made of an oxide film such as titanium oxide or copper oxide. Thereby, in these 2nd-4th support materials 200-400, adhesiveness with printed matter becomes small, and the removal from printed matter is made easy.

  In the present embodiment, in this first printing step and each step including the following printing, a metal paste containing Cu, Ag, or the like is printed by screen printing, inkjet, or the like, and heating or the like is performed after the printing. Thus, the printed material is cured to form the members 30, 40, 50.

  Then, the first transfer process shown in FIGS. 2 and 3 is performed. In the first transfer process, the one surface 11 side of the semiconductor chip 10 supported by the first support material 100 is pressed against the one surface 201 side of the second support material 200, and the bonding metal layer 30 is electroded. Transfer to the pad 20. Subsequently, the second support material 200 is removed from the bonding metal layer 30. This is the first transfer process.

  Here, the transfer in the first transfer process of the present embodiment is performed by heating and pressurizing the electrode pad 20 and the bonding metal layer 30 in a pressed state. Thereby, a solid phase bond of metal is formed between the electrode pad 20 and the bonding metal layer 30, and the two 20 and 30 are electrically and mechanically connected. Thus, the bonding metal layer 30 is formed while being connected to the electrode pad 20.

  Next, as shown in FIG. 4, in the second printing step, the rewiring 40 is printed and formed on one surface 301 of the third support material 300. Also for this printing, the same technique as the printing of the bonding metal layer 30 can be employed.

  Next, the second transfer process shown in FIGS. 4 and 5 is performed. In this second transfer step, the one surface 11 side of the semiconductor chip 10 supported by the first support material 100 is pressed against the one surface 301 side of the third support material 300, and the rewiring 40 is connected to the electrode pad 20. Transfer to the upper metal layer 30 for bonding. Subsequently, the first support material 100 is removed from the other surface 12 side of the semiconductor chip 10. As a result, the semiconductor chip 10 is supported by the third support member 300. This is the second transfer process.

  Here, the transfer in the second transfer process of the present embodiment is also performed by heating and pressurizing the bonding metal layer 30 and the rewiring 40 in a pressed state. As a result, a solid phase bond of metal is formed between the bonding metal layer 30 and the rewiring 40, and the both 30 and 40 are electrically and mechanically connected. In this way, the rewiring 40 is formed while being bonded to the bonding metal layer 30.

  Next, the sealing step shown in FIG. In this sealing step, the semiconductor chip 10 is sealed with the mold resin 60 by molding or a dispensing method. At this time, the rewiring 40 is exposed from the mold resin 60 on the one surface 11 side of the semiconductor chip 10, and the rewiring 40 is supported by the mold resin 60 on the other end side of the rewiring 40. , Sealing is performed.

  Thereafter, the removal step shown in FIG. 6B is performed. In this removal process, the third support member 300 is removed from the rewiring 40. Thus, as shown in FIGS. 6B and 6C, the configuration of the semiconductor device S1 before the bump 50 is connected is completed.

  Next, a bump forming step shown in FIG. 7 is performed. In this bump forming step, the bump 50 is formed in a part of the rewiring 40 that is exposed from the mold resin. The bump 50 may be a solder bump formed by a solder ball method or the like, but here, the bump 50 is formed by printing and baking.

  Specifically, as shown in FIG. 7A, in the bump forming process of the present embodiment, the bumps 50 are printed and formed on the fourth support material 400. Subsequently, as shown in FIG. 7B, the bump 50 is transferred to the rewiring 40 via the fourth support material 400.

  Here, the transfer in the bump forming process is also performed by heating and pressurizing the rewiring 40 and the bump 50 in a pressed state. As a result, a solid phase bond of metal is formed between the rewiring 40 and the bump 50, and the both 40 and 50 are electrically and mechanically connected. In this way, the bump 50 is formed while being connected to the rewiring 40.

  Here, in the example of FIG. 7, the fourth support material 400 has a cavity 402 that is recessed in the shape of the bump 50 on the one surface 401 side to be printed. Then, the printed matter is filled in the cavity 402, and this is baked to form the bump 50. Therefore, in the fourth support member 400, the oxide film is formed not only on the one surface 401 but also on the inner surface of the cavity 402 to ensure the releasability of the bumps 50.

  For the formation of the bumps 50, the fourth support material 400 having the flat surface 401 may be used instead of the fourth support material 400 having the cavity 402 as shown in FIG. In this case, similarly to the support material in the bonding metal layer 30 and the rewiring 40, a method is adopted in which the bump 50 is formed by printing on the flat one surface 401 of the fourth support material 400 and transferred. do it.

  Immediately after the formation of the bumps 50, a work is formed in which a plurality of semiconductor chips 10 are connected by the mold resin 60. Subsequently, the work is divided into individual chips by dicing cutting or the like. To do. Thereby, the semiconductor device S1 of this embodiment is completed.

  Thus, in the manufacturing method of the present embodiment, the chip support process and the first printing process are performed, then the first transfer process is performed, the second printing process is performed, and then the first printing process is performed. After performing the transfer process 2 and then performing the sealing process, the removing process is performed, and then the bump forming process is performed.

  By the way, when rewiring is conventionally formed by plating or a lead frame, according to the present embodiment, it is lower in cost than plating and can be formed by printing and transfer capable of forming a fine pattern than lead frame etching. The metal layer 30 and the rewiring 40 can be formed.

  Therefore, according to the manufacturing method of the present embodiment, it is possible to appropriately form the fine rewiring 40 corresponding to the narrow pitch while realizing a manufacturing cost that is lower than the conventional manufacturing cost. Then, it is possible to realize the semiconductor device S1 suitable for high-density mounting and downsizing.

  In the present embodiment, in the bump forming process, the bumps 50 are printed and formed on the fourth support material 400, and the bumps 50 are transferred to the rewiring 40 via the fourth support material 400. The bump 50 is formed. Thus, the bump 50 is also formed by printing, whereby the production line can be simplified and the cost can be further reduced.

  Here, a method of supporting the plurality of semiconductor chips 10 by the first support material 100 in the chip support process will be further described with reference to FIG.

  In the case of conventional rewiring formation by plating, a plurality of semiconductor chips 10 are arranged in a shape matching a circular wafer shape, and each step is performed, so as shown in FIG. The support material K that supports the semiconductor chip 10 is also a circular plate that matches the wafer.

  However, in this embodiment, as shown in FIG. 8B, in the chip support process, one surface 101 of the first support material 100 is rectangular, and one surface 101 of the first support material 100 is formed. The plurality of semiconductor chips 10 are arranged in a rectangular lattice shape corresponding to the rectangle. According to this, compared with the said circular support material K, there exists an advantage that many semiconductor chips 10 can be arrange | positioned efficiently in space.

(Second Embodiment)
A semiconductor device S2 according to the second embodiment of the present invention will be described with reference to FIG. The semiconductor device S2 of the present embodiment is different from the semiconductor device S1 of the first embodiment in that a heat sink 70 is attached to the semiconductor chip 10, and here, the difference will be mainly described. And

  The heat sink 70 is connected to the other surface 12 side of the semiconductor chip 10 via an adhesive 71 having excellent thermal conductivity, for example, an adhesive 71 made of Ag paste, solder, or the like. The heat sink 70 is made of, for example, a plate material made of Cu, aluminum, or the like, and here has a rectangular plate shape larger than that of the semiconductor chip 10.

  The heat sink 70 is sealed with the mold resin 60, but the plate surface of the heat sink 70 opposite to the plate surface on the semiconductor chip 10 side is exposed from the mold resin 60. Thereby, heat generated in the semiconductor chip 10 is radiated from the other surface 12 side of the semiconductor chip 10 through the heat sink 70.

  Next, a method for manufacturing the semiconductor device S2 will be described with reference to FIG. First, as shown in FIG. 10A, a heat sink 70 in a multiple state is prepared. Then, as shown in FIG. 10B, the adhesive 71 is disposed on the heat sink 70 by printing or the like.

  Then, as shown in FIG. 10C, the semiconductor chip 10 is mounted on the heat sink 70 on the other surface 12 side via the adhesive 71. Next, as shown in FIG. 10D, the jig 71 is used to press the semiconductor chip 10 against the heat sink 70, and in this state, the adhesive 71 is cured by heating or the like. Thereby, the heat sink 70 and the semiconductor chip 10 are connected.

  Subsequently, the multiple heat sinks 70 are divided into units of individual semiconductor chips 10 by dicing cut or the like. Thereby, the semiconductor chip 10 with the heat sink 70 is completed as shown in FIG.

  Thereafter, in the chip support process, the other surface 12 side of the semiconductor chip 10 is supported on the one surface 101 of the first support material 100 via the heat sink 70. As a result, the semiconductor chip 10 is supported by the first support material 100.

  Thereafter, similarly to the manufacturing method shown in the first embodiment, the first printing step, the first transfer step, the second printing step, the second transfer step, the sealing step, the removal step, and the bump formation. The semiconductor device S2 of the present embodiment is completed by performing each process and performing a dicing cut process similar to the above as necessary.

  As described above, according to the present embodiment, the bonding metal layer 30 and the rewiring 40 can be formed by printing and transfer. Therefore, it is possible to reduce the pitch while realizing a lower manufacturing cost than the conventional one. Thus, the fine rewiring 40 can be appropriately formed.

(Third embodiment)
A semiconductor device S3 according to the third embodiment of the present invention will be described with reference to FIG. Here, the difference between the semiconductor device S3 and the semiconductor device S1 of the first embodiment will be mainly described.

  The semiconductor device S3 of the present embodiment is configured such that a part of the plurality of bumps 50 is configured as a heat dissipation bump 50. In the example of FIG. 11, one of the three bumps 50 shown is a bump 50 having a larger volume and surface area than the other two, and this is configured as a heat dissipation bump 50. .

  The heat dissipation bump 50 may be electrically connected to the semiconductor chip 10 via the electrode pad 20 and the bonding metal layer 30. However, the heat dissipation bump 50 only needs to be able to dissipate heat from the semiconductor chip 10, so The bumps 50 may not be electrically connected to the semiconductor chip 10.

  For example, the electrode pad 20 to which the heat dissipation bump 50 is connected may be a dummy pad independent of the electric circuit in the semiconductor chip 10. The dummy electrode pads 20 are connected to the heat dissipation bumps 50 via the bonding metal layer 30 and the rewiring 40 to form a heat dissipation path.

  According to the semiconductor device S3 of this embodiment, there is an advantage that the heat dissipation from the one surface 11 side of the semiconductor chip 10 is improved. Such a configuration can be easily formed by printing the heat-dissipating bumps 50 larger than the other bumps 50 in the bump forming step.

  In the present embodiment, a part of the plurality of bumps 50 is configured as a heat dissipation bump 50, and the heat dissipation bump 50 is larger than the remaining electrical connection bumps 50. Therefore, it goes without saying that the present invention can be applied in combination with the second embodiment other than the first embodiment.

(Fourth embodiment)
A semiconductor device S4 according to the fourth embodiment of the present invention will be described with reference to FIG. Here, the difference between the semiconductor device S4 and the semiconductor device S1 of the first embodiment will be mainly described.

  As shown in FIG. 12, in the semiconductor device S <b> 4 of this embodiment, a portion of the surface exposed from the mold resin 60 in the rewiring 40 other than the portion to which the bump 50 is connected is covered with an electrically insulating coating layer 80. It coats with. Here, the covering layer 80 also covers the surface of the mold resin 60 located between the rewirings 40.

  Here, an opening 81 is provided in the covering layer 80, and the rewiring 40 below the opening 81 is exposed through the opening 81. The bump 50 is connected to the rewiring 40 exposed in the opening 81 through the opening 81.

  Such a covering layer 80 is made of an inorganic or organic insulating material such as a silicon nitride film, a silicon oxide film, or a polyimide film. Further, such a covering layer 80 is formed by a film forming method such as sputtering, vapor deposition, spin coating, or pasting of a formed sheet.

  In the semiconductor device S4 of the present embodiment, the rewiring 40 is covered with the covering layer 80, so that electrical insulation between the rewirings 40 is ensured. Therefore, even if the pitch between the rewirings 30 is narrowed, a short circuit between the rewirings 30 can be prevented as much as possible.

  A method for manufacturing the semiconductor device S4 of this embodiment will be described with reference to FIG. In the manufacturing method of the present embodiment, similarly to the first embodiment, the process up to the removal step (see FIG. 6) for removing the third support material 300 is performed, so that the bump 60 in the semiconductor device S4 is connected. Form the configuration.

  FIG. 13A shows this state. In this state, the surface of the rewiring 40 opposite to the semiconductor chip 10 is exposed from the mold resin 60. Next, as shown in FIG. 13 (b), the openings are formed on the surface of the mold resin 60 and on the exposed rewiring 40 by a method such as the above-described film forming method or sheet pasting. A covering layer 80 having a portion 81 is formed.

  Subsequently, by performing a bump forming process using the fourth support material 400 in the same manner as in the first embodiment, as shown in FIG. 13C, the re-exposure exposed from the opening 81 of the coating layer 80 is performed. A bump 50 is connected to the wiring 40. Thereafter, if necessary, the work is divided by dicing cut or the like in the same manner as in the first embodiment, thereby completing the semiconductor device S4 of the present embodiment.

  In the present embodiment, the rewiring 40 exposed from the mold resin 60 has a configuration in which a portion other than the connection portion with the bump 50 is covered with the covering layer 80. Therefore, the present embodiment is not limited to the first embodiment. Needless to say, the present invention can also be applied in combination with the second embodiment or the third embodiment.

(Other embodiments)
In the semiconductor devices S1 to S4 of the above embodiments, the number of the semiconductor chips 10 is one. However, as shown in FIG. 14, the semiconductor device includes a plurality of semiconductor chips 10. Also good.

  In the example of FIG. 14, the first semiconductor chip 10 is the same as the semiconductor chip 10 of each of the above embodiments, and the second semiconductor chip 15 is disposed next to the first semiconductor chip 10. Here, like the first semiconductor chip 10, the second semiconductor chip 15 has the one surface 16 and the other surface 17 in a front-back relationship.

  As for the second semiconductor chip 15, similarly to the first semiconductor chip 10, the electrode pad 20, the bonding metal layer 30, the rewiring 40, and the bump 50 are sequentially connected on the one surface 16 side. Sealed with resin 60.

  In the method of manufacturing the semiconductor device shown in FIG. 14, both semiconductor chips 10 and 15 are supported by the first support material 100 in the chip support process. Then, it is clear that the semiconductor device of FIG. 14 can be manufactured by performing the subsequent steps in the same manner as the manufacturing method shown in the first embodiment.

  As shown in FIG. 15, the semiconductor device may include another electronic component 1 in addition to the semiconductor chip 10. Other electronic components include surface mount components such as chip capacitors and resistance elements. In the example shown in FIG. 15, the chip capacitor 1 as another electronic component is disposed next to the semiconductor chip 10 inside the mold resin 60.

  The chip capacitor 1 is electrically and mechanically connected to the rewiring 40 via the conductive bonding material 2. Examples of the conductive bonding material 2 include solder and a conductive adhesive. For example, in the manufacturing method of the first embodiment, the chip capacitor 1 may be attached after the second transfer step (see FIG. 5) and before the sealing step (see FIG. 6). .

  In this case, after completion of the second transfer process, the chip capacitor 1 is mounted and fixed to the rewiring 40 supported by the third support material 300 via the conductive bonding material 2. Thereafter, the chip capacitor 1 is sealed with the mold resin 60 together with the semiconductor chip 10 in a sealing step. Thereafter, in the same manner as described above, the semiconductor device shown in FIG.

  In each of the above embodiments, the bump 50 is formed by printing, firing, or a solder ball method in the bump forming step. However, the bump 50 is not limited to these forming methods. In addition, various methods may be employed as appropriate. Further, the shape of the bump 50 is not limited to the above-described conical shape.

  In addition to the combination of the above-described embodiments, the above-described embodiments may be appropriately combined within a possible range.

DESCRIPTION OF SYMBOLS 10 Semiconductor chip 11 One side of semiconductor chip 12 Other side of semiconductor chip 20 Electrode pad 30 Metal layer for joining 40 Rewiring 50 Bump 60 Mold resin 100 1st support material 101 1st surface of 1st support material 200 2nd support material 201 One side of second support material 300 Third side support material 301 One side of third support material

Claims (3)

A semiconductor chip (10) in which the one side (11) and the other side (12) are in a front-back relationship;
An electrode pad (20) disposed on one surface of the semiconductor chip;
A rewiring (40) provided on the electrode pad and extending so that one end side is located on the electrode pad and the other end side protrudes from the outline of the semiconductor chip;
A bonding metal layer (30) interposed between the electrode pad and one end side of the rewiring and connecting the two;
A bump (50) provided on the rewiring and connected to the outside;
In a manufacturing method of a semiconductor device comprising: a mold resin (60) for sealing the semiconductor chip so that the bumps are exposed;
A chip support step of supporting the other surface side of the semiconductor chip on one surface (101) of the first support material (100);
A first printing step of printing and forming the bonding metal layer in a pattern corresponding to the arrangement pattern of the electrode pads on one surface (201) of the second support material (200);
The one surface side of the semiconductor chip supported by the first support material is pressed against the one surface side of the second support material to transfer the joining metal layer to the electrode pad, and then the joining chip A first transfer step of removing the second support material from the metal layer;
A second printing step of printing the rewiring on one surface (301) of the third support material (300);
One surface of the semiconductor chip supported by the first support material is pressed against one surface of the third support material, and the rewiring is transferred to the bonding metal layer on the electrode pad. Thereafter, a second transfer step of supporting the semiconductor chip on the third support material by removing the first support material from the other surface side of the semiconductor chip;
By sealing the semiconductor chip with the mold resin, the rewiring is exposed from the mold resin on one surface side of the semiconductor chip, and the rewiring is on the other end side of the rewiring. A sealing step to be supported by
Thereafter, a removal step of removing the third support material from the rewiring,
Next, a bump forming step of forming the bump in a portion exposed from the mold resin in the rewiring,
A method of manufacturing a semiconductor device.   In the bump forming step, the bump is printed on the fourth support material (400), and the bump is transferred to the rewiring via the fourth support material. The method of manufacturing a semiconductor device according to claim 1, wherein formation is performed. In the chip support step, one surface of the first support material is rectangular.
3. The semiconductor device manufacturing method according to claim 1, wherein a plurality of the semiconductor chips are arranged in a rectangular lattice shape corresponding to the rectangle on one surface of the first support material. Method.

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