JP5222850B2 - 静電チャック支持組立体の熱伝導率を調整する方法 - Google Patents
静電チャック支持組立体の熱伝導率を調整する方法 Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Automatic Control Of Machine Tools (AREA)
Description
εi = T0 − Tm (1)
局所に限定された材料除去の目的は、全ての場所iに対してεiを仕様の範囲内にすることである。単位面積当たりの熱流束をqと定義すると、一般的な熱伝達式は次のようになる。
式中、Keffは、セルiの垂直方向における基板支持組立体の有効熱伝達係数であり、ΔTは、Keffが有効熱伝達係数である垂直に投射された領域の両端部を規定する2つのポイントの間の正の温度差である。
「名目上」という用語は、偶発的な面の粗さが無視され、面が平坦に近いことを意味するために使用される。言い換えれば、粗さ及び非平行度を無視すれば、afは、セル面積Aiの中の表面積の割合である。そこで、各プローブ温度測定値Tmに対して、所望のKeffを達成するために、セルごとの目標表面積及び総除去面積を決定するように、セルごとにafが求められる。
TmをT0に到達させるために、KmをKhの値まで減少させなければならない。従って、afはKh/Kmに設定され、式4から、fi=nAh/Aiであることがわかる。形成された穴及びセルの面積は既知であるので、示唆される穴の数nが決定される。セルiの所定のプローブ測定値に対してnを規定する式を次のように表すことができる。
従って、セルごとの好適な穴面積の割合、すなわち所定の大きさの穴の好適な数を判定するために、複数の測定場所に対して判定されたTmの集合を使用することができる。
n = εi/β (6)
を使用してセルiごとに決定することができる。この方法を経験により更に改善することは可能である。例えば、この技術を始めて適用した後、式6の使用の結果、修正過剰又は修正不足であると判定された場合、nの好適な値がn = Cεi/βとなるように、修正係数Cを導入できる。
1.加熱プレートを含めて又は含めずにESC支持組立体を組み立てる。すなわち、該組立体の上面にチャックを結合しない。
2.加熱プレートに電力を供給するか又は低温プレートを加熱し、平衡温度に到達するのを待つ。
3.事前に確定されたグリッド密度に基づいて、加熱プレート面又は低温プレート面の各測定場所にプローブを位置決めする。
4.場所ごとの加熱プレート温度又は低温プレート温度及びxーy座標を測定及び記録し、グリッド上の全ての場所に対してTmを判定する。
5.Tmのうち最高の温度と少なくとも等しい温度を選択することにより、T0を判定する。
6.式1から場所ごとのεを判定する。
7.式5を使用してfiを判定するか、又は式6を使用して、グリッド上の全ての場所に対してnを判定する。
8.判定された各fiと一致するように、各グリッドセルにn個の穴を形成する。
Claims (19)
- 静電チャックを支持する支持組立体の熱伝導率を調整する方法であって、前記支持組立体に対して複数のセルが定義されており、前記方法は、
(a)各々が1つのセルと対応する前記支持組立体の表面上の複数の場所における温度を測定することと、
(b)各セルについて示唆される面積減少の割合を測定値から決定することと、
(c)各セルの熱伝導率を減少させるために、示唆された面積減少の割合に従ってそのセルの中の前記支持組立体の前記表面から材料を除去することと、を含む方法。 - 目標温度プロファイルから前記複数のセルにそれぞれ対応する複数の目標熱伝導率の配置が決定される請求項1記載の方法。
- 前記測定は、温度センサを使用して実行される請求項1記載の方法。
- 前記材料の除去の結果、前記支持組立体の前記表面によって支持される前記静電チャックのチャック面における平衡温度の均一性が改善される請求項1記載の方法。
- 前記材料は、前記支持組立体の表面に複数の穴を形成することにより除去される請求項1記載の方法。
- 前記穴は、楕円形、多角形又は環状の形状を有する請求項5記載の方法。
- 前記穴は垂直な壁又は傾斜した壁を有し、底面は凹形、平坦又は凸形である請求項5記載の方法。
- 前記穴は、0.127mm(5.0mil)から1.27mm(50mil)の最大寸法を有する請求項5記載の方法。
- 1つのセルの中の前記穴は、0.0254mm(1mil)から2.54mm(100mil)の間隔を有する請求項5記載の方法。
- 1つのセルの中の前記穴は、一定の最大寸法を有する請求項5記載の方法。
- 複数のセルがグリッドを構成するように配列されている請求項1記載の方法。
- 前記グリッドは、12.7mm(0.5インチ)から25.4mm(1インチ)のグリッドサイズを有する請求項11記載の方法。
- 各セルに最大で1つの穴が形成される請求項5記載の方法。
- 前記センサは、数値制御位置決め装置により移動される請求項3記載の方法。
- 前記材料の除去は、ドリリング、ルーティング、レーザー加工又はグリットブラスティング加工により実行される請求項1記載の方法。
- 請求項1記載の方法によって得られた前記支持組立体の前記表面に静電チャックを結合することと、
前記静電チャックが結合された前記支持組立体をプラズマ処理チャンバの内部に装着することとを含む方法。 - 請求項16記載の方法によって得られた、前記静電チャックおよび前記支持組立体を含む構造体を使用して半導体ウェハを処理する方法であって、前記半導体ウェハをプラズマ処理することを含む方法。
- 請求項1記載の方法によって低温プレートの熱伝導率を調整することと、
前記低温プレートを含む構造体に静電チャックを結合することと、を含み、
前記支持組立体の前記表面が前記低温プレートの表面で構成されている方法。 - 請求項1記載の方法によって、低温プレートを含む構造体に結合された膜ヒータに結合された加熱プレートの熱伝導率を調整することと、
前記加熱プレートを含む構造体に静電チャックを結合することと、を含み、
前記支持組立体の前記表面が前記加熱プレートの表面で構成されている方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US11/511,367 US7501605B2 (en) | 2006-08-29 | 2006-08-29 | Method of tuning thermal conductivity of electrostatic chuck support assembly |
US11/511,367 | 2006-08-29 | ||
PCT/US2007/018711 WO2008027305A2 (en) | 2006-08-29 | 2007-08-24 | Method of tuning thermal conductivity of electrostatic chuck support assembly |
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JP2013048465A Division JP5509361B2 (ja) | 2006-08-29 | 2013-03-11 | 静電チャック支持組立体 |
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JP2010503208A JP2010503208A (ja) | 2010-01-28 |
JP5222850B2 true JP5222850B2 (ja) | 2013-06-26 |
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JP2009526653A Active JP5222850B2 (ja) | 2006-08-29 | 2007-08-24 | 静電チャック支持組立体の熱伝導率を調整する方法 |
JP2013048465A Active JP5509361B2 (ja) | 2006-08-29 | 2013-03-11 | 静電チャック支持組立体 |
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US (2) | US7501605B2 (ja) |
JP (2) | JP5222850B2 (ja) |
KR (1) | KR101432845B1 (ja) |
CN (1) | CN101512750B (ja) |
TW (1) | TWI478274B (ja) |
WO (1) | WO2008027305A2 (ja) |
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JP5509361B2 (ja) | 2014-06-04 |
US20080083736A1 (en) | 2008-04-10 |
TW200822281A (en) | 2008-05-16 |
US7939784B2 (en) | 2011-05-10 |
WO2008027305A2 (en) | 2008-03-06 |
CN101512750A (zh) | 2009-08-19 |
KR101432845B1 (ko) | 2014-08-26 |
JP2010503208A (ja) | 2010-01-28 |
WO2008027305A3 (en) | 2008-05-02 |
US7501605B2 (en) | 2009-03-10 |
CN101512750B (zh) | 2014-09-03 |
JP2013157617A (ja) | 2013-08-15 |
WO2008027305A8 (en) | 2009-03-26 |
KR20090064555A (ko) | 2009-06-19 |
TWI478274B (zh) | 2015-03-21 |
US20090161286A1 (en) | 2009-06-25 |
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