JP5210439B2 - 高圧処理器及び高圧シーリング方法 - Google Patents

高圧処理器及び高圧シーリング方法 Download PDF

Info

Publication number
JP5210439B2
JP5210439B2 JP2011552870A JP2011552870A JP5210439B2 JP 5210439 B2 JP5210439 B2 JP 5210439B2 JP 2011552870 A JP2011552870 A JP 2011552870A JP 2011552870 A JP2011552870 A JP 2011552870A JP 5210439 B2 JP5210439 B2 JP 5210439B2
Authority
JP
Japan
Prior art keywords
door
pressure
wafer
carbon dioxide
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011552870A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012519392A (ja
Inventor
ガプス ハン
Original Assignee
エーエヌディ コーポレーション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エーエヌディ コーポレーション filed Critical エーエヌディ コーポレーション
Publication of JP2012519392A publication Critical patent/JP2012519392A/ja
Application granted granted Critical
Publication of JP5210439B2 publication Critical patent/JP5210439B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
JP2011552870A 2009-03-13 2009-03-17 高圧処理器及び高圧シーリング方法 Expired - Fee Related JP5210439B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2009-0021573 2009-03-13
KR1020090021573A KR101047863B1 (ko) 2009-03-13 2009-03-13 고압 처리기 및 고압 실링방법
PCT/KR2009/001309 WO2010104231A1 (ko) 2009-03-13 2009-03-17 고압 처리기 및 고압 실링방법

Publications (2)

Publication Number Publication Date
JP2012519392A JP2012519392A (ja) 2012-08-23
JP5210439B2 true JP5210439B2 (ja) 2013-06-12

Family

ID=42728502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011552870A Expired - Fee Related JP5210439B2 (ja) 2009-03-13 2009-03-17 高圧処理器及び高圧シーリング方法

Country Status (3)

Country Link
JP (1) JP5210439B2 (ko)
KR (1) KR101047863B1 (ko)
WO (1) WO2010104231A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5708506B2 (ja) * 2011-04-20 2015-04-30 東京エレクトロン株式会社 処理装置
JP5497114B2 (ja) 2011-07-29 2014-05-21 セメス株式会社 基板処理装置及び基板処理方法
CN106935876B (zh) * 2017-04-17 2024-01-30 百睿机械(深圳)有限公司 一种电池正负压箱体装置
JP7105183B2 (ja) 2018-12-27 2022-07-22 株式会社ダイヘン インピーダンス整合装置及びインピーダンス整合方法
CN110164799B (zh) * 2019-05-31 2021-03-02 吉林建筑大学 一种基于微电子控制的定位封装机构及方法
KR102391244B1 (ko) * 2020-06-05 2022-04-28 주식회사 제우스이엔피 식각장치 및 그 제어방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0289829U (ko) * 1988-12-28 1990-07-17
JPH0417333A (ja) * 1990-05-10 1992-01-22 Hitachi Ltd 基板の超臨界ガスによる洗浄方法及び洗浄システム
JP2000340540A (ja) * 1999-05-31 2000-12-08 Hitachi Koki Co Ltd 超臨界乾燥装置
JP2001077074A (ja) * 1999-08-31 2001-03-23 Kobe Steel Ltd 半導体ウエハ等の洗浄装置
JP3983015B2 (ja) * 2000-07-03 2007-09-26 東京エレクトロン株式会社 シール機構付処理装置
JP3982791B2 (ja) * 2001-05-29 2007-09-26 大日本スクリーン製造株式会社 高圧処理装置
US20040040660A1 (en) * 2001-10-03 2004-03-04 Biberger Maximilian Albert High pressure processing chamber for multiple semiconductor substrates
JP3978023B2 (ja) * 2001-12-03 2007-09-19 株式会社神戸製鋼所 高圧処理方法
JP3950084B2 (ja) * 2003-06-04 2007-07-25 株式会社神戸製鋼所 高圧処理装置
JP2005081302A (ja) * 2003-09-10 2005-03-31 Japan Organo Co Ltd 超臨界流体による電子部品部材類の洗浄方法及び洗浄装置
KR20060021637A (ko) * 2004-09-03 2006-03-08 삼성전자주식회사 웨이퍼 세정 건조 장비
KR20060108317A (ko) * 2005-04-12 2006-10-17 삼성전자주식회사 오염방지 커버가 부착된 에어 실린더를 구비한 반도체 장비
KR100713209B1 (ko) * 2007-02-06 2007-05-02 서강대학교산학협력단 세정장치에 사용되는 고압세정기

Also Published As

Publication number Publication date
KR20100103123A (ko) 2010-09-27
JP2012519392A (ja) 2012-08-23
KR101047863B1 (ko) 2011-07-08
WO2010104231A1 (ko) 2010-09-16

Similar Documents

Publication Publication Date Title
JP5210439B2 (ja) 高圧処理器及び高圧シーリング方法
US10727100B2 (en) Load port and EFEM
JP7164824B2 (ja) ドア開閉システムおよびドア開閉システムを備えたロードポート
KR102326734B1 (ko) 기판 처리 장치
JP7193748B2 (ja) ロードポート
TWI826438B (zh) 排氣噴嘴單元、裝載端口和設備前端模塊
KR101593386B1 (ko) 퍼지 모듈 및 이를 포함하는 로드 포트
TW201641387A (zh) 門開閉裝置、搬送裝置、分類裝置、及收納容器的連結方法
JP2013163161A (ja) 筒状体洗浄装置、及び筒状体洗浄方法
JP2001077074A (ja) 半導体ウエハ等の洗浄装置
JP2002334863A (ja) Foup用ドアシェルの洗浄乾燥方法及び装置
JP7081119B2 (ja) ロードポート装置
JP3983015B2 (ja) シール機構付処理装置
KR101244900B1 (ko) 풉 세정용 퍼지시스템
KR20090132965A (ko) 매엽식 세정장치
JP2004288982A (ja) 処理装置
TWI763773B (zh) 氣體供給裝置、氣體供給裝置之控制方法、裝載埠及半導體製造裝置
KR102194106B1 (ko) 진공밸브
JP6323245B2 (ja) ガスパージユニット、ロードポート装置およびパージ対象容器の設置台
KR100784789B1 (ko) 기판 처리 장치 및 방법
JP7277840B2 (ja) ロードポート及びロードポートの駆動方法
JP6721852B2 (ja) ロードポート
KR101643329B1 (ko) 기판 냉각 장치
KR100765901B1 (ko) 기판 처리 장치 및 상기 장치에서 기판을 로딩하는 방법
JP2007129160A (ja) ポッドシェル洗浄装置及びポッドシェル洗浄方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130122

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130129

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130222

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160301

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees