JP5209881B2 - リードフレーム及びこれを用いた発光素子パッケージ - Google Patents
リードフレーム及びこれを用いた発光素子パッケージ Download PDFInfo
- Publication number
- JP5209881B2 JP5209881B2 JP2007022571A JP2007022571A JP5209881B2 JP 5209881 B2 JP5209881 B2 JP 5209881B2 JP 2007022571 A JP2007022571 A JP 2007022571A JP 2007022571 A JP2007022571 A JP 2007022571A JP 5209881 B2 JP5209881 B2 JP 5209881B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- lead
- heat sink
- emitting device
- device package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000465 moulding Methods 0.000 claims description 11
- 239000003566 sealing material Substances 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 230000000994 depressogenic effect Effects 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- -1 Gallium nitride compound Chemical class 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Description
110 ヒートシンク
111 第1溝
120 第1縁部
121 第1連結部
200 第2フレーム
210 装着部
211 ホール
220 リード
230 第2縁部
231 第2連結部
240 成形部
Claims (21)
- ヒートシンクと、
前記ヒートシンクの上側に結合され、ホールが形成された装着部と、少なくとも一対のリードと、を含むフレームと、
前記ヒートシンクと前記フレームとを結合する成形部と、を備え、
前記ヒートシンクと前記リードとの間には、前記ヒートシンクと前記リードとの間の間隙となる空間部が形成され、
前記空間部は、前記リードと重畳する前記ヒートシンクの部分に形成される第1溝、または、前記ヒートシンクと重畳する前記リードに形成される第2溝であることを特徴とする発光素子パッケージ。 - 前記空間部には、前記成形部が形成されることを特徴とする請求項1に記載の発光素子パッケージ。
- 前記装着部は、円状、矩形状または楕円状に形成されることを特徴とする請求項1に記載の発光素子パッケージ。
- 前記装着部には、内側に傾斜した傾斜部が形成されることを特徴とする請求項1に記載の発光素子パッケージ。
- 前記傾斜部には、反射面が形成されることを特徴とする請求項4に記載の発光素子パッケージ。
- 前記フレームは、3対以上のリードを備えることを特徴とする請求項1に記載の発光素子パッケージ。
- 前記装着部の内側に位置する発光素子をさらに含むことを特徴とする請求項1に記載の発光素子パッケージ。
- 前記発光素子は、前記ヒートシンクに取り付けられ、前記リードに電気的に連結されることを特徴とする請求項7に記載の発光素子パッケージ。
- 前記発光素子は、ワイヤによって前記リードに連結されることを特徴とする請求項8に記載の発光素子パッケージ。
- 前記装着部の内側には、複数の発光素子が結合されることを特徴とする請求項1に記載の発光素子パッケージ。
- 前記装着部の上側には、
封止材と、
レンズと、をさらに含むことを特徴とする請求項1に記載の発光素子パッケージ。 - 前記封止材は、シリコンまたはエポキシを含むことを特徴とする請求項11に記載の発光素子パッケージ。
- 前記リードの厚さと前記装着部の厚さは、実質的に等しいことを特徴とする請求項1に記載の発光素子パッケージ。
- 前記第1溝は、前記ヒートシンクの上側の表面から窪んだ部分であることを特徴とする請求項1に記載の発光素子パッケージ。
- 前記第2溝は、前記リードの下側の表面から窪んだ部分であることを特徴とする請求項1に記載の発光素子パッケージ。
- 第1縁部と、前記第1縁部に連結されるヒートシンクとを含む第1フレームと、
第2縁部と、少なくとも一対のリードと、ホールが形成された装着部と、を含み、前記
第1フレームに結合される第2フレームと、を含み、
前記装着部は、前記第2フレームの第2縁部に連結されるとともに、前記ヒートシンクの上に位置し、
前記第1縁部は前記ヒートシンクの周囲に位置し、前記第2縁部は前記装着部の周囲に
位置し、
前記第1縁部と前記第2縁部とは互いに接触し、
前記ヒートシンクと前記リードとの間には、前記ヒートシンクと前記リードとの間の間
隙となる空間部が形成され、
前記空間部は、前記リードと重畳する前記ヒートシンクの部分に形成される第1溝、ま
たは、前記ヒートシンクと重畳する前記リードに形成される第2溝であることを特徴とす
るリードフレーム。
- 前記ヒートシンクの厚さは、前記リードの厚さより厚いことを特徴とする請求項16に記載のリードフレーム。
- 前記第1縁部の大きさと前記第2縁部の大きさは同じであることを特徴とする請求項16に記載のリードフレーム。
- 前記リードは、前記第2縁部から前記装着部に向かって延びることを特徴とする請求項16に記載のリードフレーム。
- 前記第1溝は、前記ヒートシンクの上側の表面から窪んだ部分であることを特徴とする請求項16に記載のリードフレーム。
- 前記第2溝は、前記リードの下側の表面から窪んだ部分であることを特徴とする請求項16に記載のリードフレーム。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060010003A KR100809816B1 (ko) | 2006-02-02 | 2006-02-02 | 리드프레임, 그를 이용한 발광 소자 패키지 및 그의 제조방법 |
KR10-2006-0010003 | 2006-02-02 | ||
KR10-2006-0083014 | 2006-08-30 | ||
KR1020060083014A KR100781285B1 (ko) | 2006-08-30 | 2006-08-30 | 발광 소자용 리드 프레임 및 발광 소자 패키지 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007208265A JP2007208265A (ja) | 2007-08-16 |
JP5209881B2 true JP5209881B2 (ja) | 2013-06-12 |
Family
ID=37903974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007022571A Active JP5209881B2 (ja) | 2006-02-02 | 2007-02-01 | リードフレーム及びこれを用いた発光素子パッケージ |
Country Status (4)
Country | Link |
---|---|
US (1) | US7855391B2 (ja) |
EP (1) | EP1816688B1 (ja) |
JP (1) | JP5209881B2 (ja) |
CN (1) | CN102903707B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100904152B1 (ko) * | 2006-06-30 | 2009-06-25 | 서울반도체 주식회사 | 히트싱크 지지부를 갖는 리드프레임, 그것을 사용한 발광다이오드 패키지 제조방법 및 그것에 의해 제조된 발광다이오드 패키지 |
KR20090069146A (ko) * | 2007-12-24 | 2009-06-29 | 삼성전기주식회사 | 발광 다이오드 패키지 |
DE102008003971A1 (de) * | 2008-01-11 | 2009-07-16 | Ledon Lighting Jennersdorf Gmbh | Leuchtdiodenanordnung mit Schutzrahmen |
JP5416975B2 (ja) * | 2008-03-11 | 2014-02-12 | ローム株式会社 | 半導体発光装置 |
KR101660721B1 (ko) * | 2009-06-15 | 2016-09-29 | 엘지전자 주식회사 | 발광 다이오드 패키지 및 이를 포함하는 백라이트 유닛과 디스플레이장치 |
KR101628366B1 (ko) * | 2009-07-06 | 2016-06-08 | 엘지전자 주식회사 | 광학 어셈블리, 이를 구비한 백라이트 유닛 및 디스플레이 장치 |
EP2354817A1 (en) * | 2009-12-14 | 2011-08-10 | Lg Electronics Inc. | Backlight unit, and display apparatus including the backlight unit |
KR101766719B1 (ko) * | 2010-03-25 | 2017-08-09 | 엘지이노텍 주식회사 | 발광 다이오드 및 이를 포함하는 발광 소자 패키지 |
JP2012049278A (ja) * | 2010-08-26 | 2012-03-08 | I-Chiun Precision Industry Co Ltd | 熱電分離型発光ダイオードブラケットの製作方法 |
US8669580B2 (en) * | 2010-12-22 | 2014-03-11 | Psi Technologies, Inc. | Scalable heat dissipating microelectronic integration platform (SHDMIP) for lighting solutions and method of manufacturing thereof |
KR101626412B1 (ko) * | 2010-12-24 | 2016-06-02 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
US8575645B2 (en) * | 2011-11-22 | 2013-11-05 | GEM Weltronics TWN Corporation | Thin multi-layer LED array engine |
TWI800538B (zh) | 2018-10-08 | 2023-05-01 | 晶元光電股份有限公司 | 發光元件 |
CN114597188A (zh) * | 2020-12-02 | 2022-06-07 | 新光电气工业株式会社 | 引线框架、半导体装置及引线框架的制造方法 |
US11633072B2 (en) | 2021-02-12 | 2023-04-25 | The Procter & Gamble Company | Multi-phase shampoo composition with an aesthetic design |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69315566T2 (de) * | 1993-06-18 | 1998-03-26 | Xeikon Nv | Led-Aufzeichnungskopf |
JP3618534B2 (ja) * | 1997-11-28 | 2005-02-09 | 同和鉱業株式会社 | 光通信用ランプ装置とその製造方法 |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
US6274924B1 (en) | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
DE19918370B4 (de) * | 1999-04-22 | 2006-06-08 | Osram Opto Semiconductors Gmbh | LED-Weißlichtquelle mit Linse |
US6517218B2 (en) * | 2000-03-31 | 2003-02-11 | Relume Corporation | LED integrated heat sink |
JP3770192B2 (ja) * | 2002-04-12 | 2006-04-26 | 松下電器産業株式会社 | チップ型led用リードフレーム |
WO2004001862A1 (ja) * | 2002-06-19 | 2003-12-31 | Sanken Electric Co., Ltd. | 半導体発光装置及びその製法並びに半導体発光装置用リフレクタ |
JP3910171B2 (ja) * | 2003-02-18 | 2007-04-25 | シャープ株式会社 | 半導体発光装置、その製造方法および電子撮像装置 |
WO2004102685A1 (en) | 2003-05-14 | 2004-11-25 | Nano Packaging Technology, Inc. | Light emitting device, package structure thereof and manufacturing method thereof |
JP3938100B2 (ja) * | 2003-05-15 | 2007-06-27 | 邦裕 服部 | Ledランプおよびled照明具 |
KR100575216B1 (ko) | 2004-03-05 | 2006-04-28 | 럭스피아 주식회사 | 발광소자용 패캐지 베이스 |
KR100613065B1 (ko) | 2004-05-21 | 2006-08-16 | 서울반도체 주식회사 | 고열전도성 반사체를 이용한 발광 다이오드 패키지 및 그제조방법 |
CN2710159Y (zh) * | 2004-06-11 | 2005-07-13 | 佛山市国星光电科技有限公司 | 功率发光二极管支架 |
WO2006059828A1 (en) * | 2004-09-10 | 2006-06-08 | Seoul Semiconductor Co., Ltd. | Light emitting diode package having multiple molding resins |
KR100635779B1 (ko) | 2005-01-03 | 2006-10-17 | 서울반도체 주식회사 | 히트싱크 지지링을 갖는 리드프레임, 그것을 사용한 발광다이오드 패키지 제조방법 및 그것에 의해 제조된 발광다이오드 패키지 |
WO2006065007A1 (en) * | 2004-12-16 | 2006-06-22 | Seoul Semiconductor Co., Ltd. | Leadframe having a heat sink supporting ring, fabricating method of a light emitting diodepackage using the same and light emitting diodepackage fabbricated by the method |
-
2007
- 2007-01-31 EP EP07290124.2A patent/EP1816688B1/en active Active
- 2007-02-01 JP JP2007022571A patent/JP5209881B2/ja active Active
- 2007-02-02 CN CN201210326272.1A patent/CN102903707B/zh active Active
- 2007-02-02 US US11/701,460 patent/US7855391B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102903707B (zh) | 2015-09-30 |
CN102903707A (zh) | 2013-01-30 |
US7855391B2 (en) | 2010-12-21 |
US20070210325A1 (en) | 2007-09-13 |
JP2007208265A (ja) | 2007-08-16 |
EP1816688A2 (en) | 2007-08-08 |
EP1816688B1 (en) | 2016-11-02 |
EP1816688A3 (en) | 2014-06-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5209881B2 (ja) | リードフレーム及びこれを用いた発光素子パッケージ | |
US8866166B2 (en) | Solid state lighting device | |
JP5813086B2 (ja) | Ledパッケージ及びその製造方法 | |
US7649210B2 (en) | Thin film light emitting diode | |
KR100845856B1 (ko) | 발광 소자 패키지 및 그 제조방법 | |
JP3979424B2 (ja) | 発光装置 | |
TWI523273B (zh) | 具有對比面之發光二極體封裝體 | |
JP4353196B2 (ja) | 発光装置 | |
TWI476963B (zh) | 發光二極體封裝件 | |
KR100850945B1 (ko) | 발광 소자 패키지 및 그 제조방법 | |
US9190566B2 (en) | Light emitting device | |
JP6432654B2 (ja) | 半導体発光装置 | |
KR100781285B1 (ko) | 발광 소자용 리드 프레임 및 발광 소자 패키지 | |
KR100450514B1 (ko) | 백색 발광 다이오드 | |
KR100813070B1 (ko) | 발광 소자 패키지 및 그 제조방법 | |
JP6978708B2 (ja) | 半導体発光装置 | |
JP7227528B2 (ja) | 半導体発光装置 | |
KR100610272B1 (ko) | 넓은 지향각의 구조를 갖는 멀티칼러 발광다이오드 구조 | |
KR20030082282A (ko) | 백색 발광 다이오드 | |
KR101155033B1 (ko) | 엘이디 패키지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070611 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070611 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090828 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111101 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120821 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121120 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130129 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130222 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160301 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5209881 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |