JP5207451B2 - 放射線画像検出器 - Google Patents
放射線画像検出器 Download PDFInfo
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- JP5207451B2 JP5207451B2 JP2008070925A JP2008070925A JP5207451B2 JP 5207451 B2 JP5207451 B2 JP 5207451B2 JP 2008070925 A JP2008070925 A JP 2008070925A JP 2008070925 A JP2008070925 A JP 2008070925A JP 5207451 B2 JP5207451 B2 JP 5207451B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
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- 238000012986 modification Methods 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 239000004985 Discotic Liquid Crystal Substance Substances 0.000 description 1
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- 239000004793 Polystyrene Substances 0.000 description 1
- 229910018110 Se—Te Inorganic materials 0.000 description 1
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- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 150000002894 organic compounds Chemical class 0.000 description 1
- YRZZLAGRKZIJJI-UHFFFAOYSA-N oxyvanadium phthalocyanine Chemical compound [V+2]=O.C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 YRZZLAGRKZIJJI-UHFFFAOYSA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Description
2%〜15%であることが望ましい。
−Se層を薄くし、光透過型の第1の電極層を設けるとともに、第1の電極層の上方に蛍光体を設け、その蛍光体からの光を電荷に変換するものである。なお、上記のように構成された放射線画像検出器においては、記録用光導電層や半導体層の厚さは1〜30μm程度となり、TFT読取方式の放射線画像検出器の場合には、蓄積容量はなくてもよい。
2 正孔注入阻止層
3 記録用光導電層(半導体層)
4 電荷輸送層
5 読取用光導電層
6 蓄電部
7 第2の電極層
8 透明線状電極
9 遮光線状電極
10 放射線画像検出器
11 結晶化防止層
20 高圧電源
30 チャージアンプ
50 放射線画像検出器
55 電圧源
60 アクティブマトリクス基板
61 収集電極
62 蓄積容量
63 TFTスイッチ
64 画素
65 走査配線
66 データ配線
70 放射線検出部
71 半導体層
72 正孔注入阻止層
73 上部電極(電圧印加電極)
74 結晶化防止層
80 読出回路
90 ゲートドライバ
101 第1の電極層
102 記録用光導電層
103 電荷輸送層
104 読取用光導電層
105 蓄電部
106 透明線状電極
107 遮光線状電極
Claims (6)
- 電圧が印加される電圧印加電極と、放射線の照射を受けて電荷を発生する半導体層と、放射線量に応じた電気信号を検出する電極とが積層され、前記半導体層において発生した電荷に応じた画像信号が読み出される放射線画像検出器において、
前記電圧印加電極と前記半導体層との間に、前記電圧印加電極から前記半導体層への正孔の注入を阻止する正孔注入阻止層が設けられ、
該正孔注入阻止層がSbxS100−xの合金からなり、前記xが41≦x≦60を満たすものであることを特徴とする放射線画像検出器。 - 前記正孔注入阻止層の厚さが、0.25μm以上3μm以下であることを特徴とする請求項1記載の放射線画像検出器。
- 前記正孔注入阻止層と前記半導体層との間に、SeとAsとを主成分とする結晶化防止層が設けられていることを特徴とする請求項1または2記載の放射線画像検出器。
- 前記結晶化防止層におけるAsの成分が2%〜15%であることを特徴とする請求項3記載の放射線画像検出器。
- 前記電圧印加電極が、前記放射線の照射時には負電圧が印加され、前記画像信号の読出し時には接地されるものであることを特徴とする請求項1から4いずれか1項記載の放射線画像検出器。
- 前記電圧印加電極が、前記放射線の照射時には正の電圧が印加されるものであることを特徴とする請求項1から4いずれか1項記載の放射線画像検出器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008070925A JP5207451B2 (ja) | 2007-09-28 | 2008-03-19 | 放射線画像検出器 |
US12/240,299 US7608833B2 (en) | 2007-09-28 | 2008-09-29 | Radiation image detector |
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JP2007254604 | 2007-09-28 | ||
JP2007254604 | 2007-09-28 | ||
JP2008070925A JP5207451B2 (ja) | 2007-09-28 | 2008-03-19 | 放射線画像検出器 |
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JP2009099933A JP2009099933A (ja) | 2009-05-07 |
JP5207451B2 true JP5207451B2 (ja) | 2013-06-12 |
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JP2008070925A Active JP5207451B2 (ja) | 2007-09-28 | 2008-03-19 | 放射線画像検出器 |
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Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5534979B1 (ja) * | 1969-10-27 | 1980-09-10 | ||
JPS552699B2 (ja) * | 1974-05-13 | 1980-01-22 | ||
JPS5946738A (ja) * | 1982-09-09 | 1984-03-16 | Matsushita Electronics Corp | 光電変換タ−ゲツトおよびその製造方法 |
JPS61120586A (ja) * | 1984-11-15 | 1986-06-07 | Toshiba Corp | 固体撮像装置 |
JPH065223A (ja) * | 1992-06-19 | 1994-01-14 | Nippon Hoso Kyokai <Nhk> | 撮像装置およびその製造方法 |
JP4054168B2 (ja) * | 2000-08-10 | 2008-02-27 | 日本放送協会 | 撮像デバイス及びその動作方法 |
JP3678162B2 (ja) * | 2001-04-12 | 2005-08-03 | 株式会社島津製作所 | 放射線検出装置 |
JP2007150278A (ja) * | 2005-11-01 | 2007-06-14 | Fujifilm Corp | 放射線撮像パネルを構成する光導電層および放射線撮像パネル |
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- 2008-03-19 JP JP2008070925A patent/JP5207451B2/ja active Active
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