JP5201937B2 - パターン形成方法、及び薄膜トランジスタの作製方法 - Google Patents

パターン形成方法、及び薄膜トランジスタの作製方法 Download PDF

Info

Publication number
JP5201937B2
JP5201937B2 JP2007268621A JP2007268621A JP5201937B2 JP 5201937 B2 JP5201937 B2 JP 5201937B2 JP 2007268621 A JP2007268621 A JP 2007268621A JP 2007268621 A JP2007268621 A JP 2007268621A JP 5201937 B2 JP5201937 B2 JP 5201937B2
Authority
JP
Japan
Prior art keywords
layer
laser beam
light
oxide
release layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007268621A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008147626A5 (enExample
JP2008147626A (ja
Inventor
明久 下村
秀和 宮入
安弘 神保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007268621A priority Critical patent/JP5201937B2/ja
Publication of JP2008147626A publication Critical patent/JP2008147626A/ja
Publication of JP2008147626A5 publication Critical patent/JP2008147626A5/ja
Application granted granted Critical
Publication of JP5201937B2 publication Critical patent/JP5201937B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP2007268621A 2006-10-17 2007-10-16 パターン形成方法、及び薄膜トランジスタの作製方法 Expired - Fee Related JP5201937B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007268621A JP5201937B2 (ja) 2006-10-17 2007-10-16 パターン形成方法、及び薄膜トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006282684 2006-10-17
JP2006282684 2006-10-17
JP2007268621A JP5201937B2 (ja) 2006-10-17 2007-10-16 パターン形成方法、及び薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2008147626A JP2008147626A (ja) 2008-06-26
JP2008147626A5 JP2008147626A5 (enExample) 2010-09-24
JP5201937B2 true JP5201937B2 (ja) 2013-06-05

Family

ID=39302207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007268621A Expired - Fee Related JP5201937B2 (ja) 2006-10-17 2007-10-16 パターン形成方法、及び薄膜トランジスタの作製方法

Country Status (4)

Country Link
US (1) US7867907B2 (enExample)
JP (1) JP5201937B2 (enExample)
KR (1) KR101325788B1 (enExample)
CN (1) CN101271827B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190042516A (ko) * 2019-04-15 2019-04-24 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP5205042B2 (ja) * 2006-12-20 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5442224B2 (ja) * 2007-07-23 2014-03-12 株式会社半導体エネルギー研究所 Ｓｏｉ基板の製造方法
JP2010073820A (ja) * 2008-09-17 2010-04-02 Dowa Electronics Materials Co Ltd 導電接続部付き半導体素子用電極膜およびその製造方法、ならびに、この半導体素子用電極膜を具える発光素子
KR101513717B1 (ko) * 2008-09-18 2015-04-20 삼성디스플레이 주식회사 기판 및 이를 갖는 표시장치
WO2010065955A1 (en) * 2008-12-05 2010-06-10 Solopower, Inc. Method and apparatus for forming contact layers for continuous workpieces
JP5258666B2 (ja) * 2009-04-22 2013-08-07 株式会社半導体エネルギー研究所 発光装置の作製方法および成膜用基板
KR101050462B1 (ko) * 2009-05-06 2011-07-19 삼성모바일디스플레이주식회사 레이저 조사 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
JP2013512111A (ja) * 2009-11-30 2013-04-11 イ−エスアイ−パイロフォトニクス レーザーズ インコーポレイテッド 一連のレーザパルスを用いて薄膜にラインをスクライブするための方法及び装置
US20110287593A1 (en) * 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor film and method for manufacturing semiconductor device
TWI400138B (zh) * 2010-11-18 2013-07-01 Ind Tech Res Inst 雷射背面加工吸附方法及其裝置
JPWO2012153364A1 (ja) 2011-05-10 2014-07-28 パナソニック株式会社 表示用薄膜半導体装置及び表示用薄膜半導体装置の製造方法
KR20140008562A (ko) * 2012-07-05 2014-01-22 삼성디스플레이 주식회사 유기 발광 표시 장치의 제조 방법
KR102002858B1 (ko) 2012-08-10 2019-10-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
US11074025B2 (en) 2012-09-03 2021-07-27 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US20150223345A1 (en) * 2012-09-25 2015-08-06 Toray Industries, Inc. Method of forming wiring pattern, and wiring pattern formation
WO2014088950A1 (en) * 2012-12-07 2014-06-12 3M Innovative Properties Company Method of making transparent conductors on a substrate
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
EP2781296B1 (de) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
TWI685026B (zh) 2013-08-06 2020-02-11 日商半導體能源研究所股份有限公司 剝離方法
TWI794098B (zh) 2013-09-06 2023-02-21 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
JP6513929B2 (ja) 2013-11-06 2019-05-15 株式会社半導体エネルギー研究所 剥離方法
CN103604527B (zh) * 2013-12-06 2016-02-17 上海交通大学 使用布拉格光栅阵列测量温度的方法
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US20150165563A1 (en) * 2013-12-17 2015-06-18 Corning Incorporated Stacked transparent material cutting with ultrafast laser beam optics, disruptive layers and other layers
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
CN103686005A (zh) * 2013-12-24 2014-03-26 北京交通大学 一种具有记忆和多次选择输出功能的像素单元电路
KR102334815B1 (ko) 2014-02-19 2021-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 박리 방법
TWI679560B (zh) 2014-03-13 2019-12-11 日商半導體能源研究所股份有限公司 觸控面板
DE112015001780B4 (de) 2014-04-11 2022-02-03 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung
KR102445217B1 (ko) 2014-07-08 2022-09-20 코닝 인코포레이티드 재료를 레이저 가공하는 방법 및 장치
US9801415B2 (en) * 2014-07-11 2017-10-31 POSIFA Microsytems, Inc. MEMS vaporizer
TWI659793B (zh) 2014-07-14 2019-05-21 美商康寧公司 用於使用可調整雷射束焦線來處理透明材料的系統及方法
KR101865441B1 (ko) * 2014-09-29 2018-06-07 주식회사 엘지화학 발열체 및 이의 제조방법
EP3848334A1 (en) 2015-03-24 2021-07-14 Corning Incorporated Alkaline earth boro-aluminosilicate glass article with laser cut edge
TWI631688B (zh) * 2015-06-16 2018-08-01 勤友光電股份有限公司 用於雷射剝離處理之晶圓結構
JP6259023B2 (ja) * 2015-07-20 2018-01-10 ウルトラテック インク 電極系デバイス用のａｌｄ処理のためのマスキング方法
US10259207B2 (en) 2016-01-26 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming separation starting point and separation method
CN109803786B (zh) 2016-09-30 2021-05-07 康宁股份有限公司 使用非轴对称束斑对透明工件进行激光加工的设备和方法
JP7066701B2 (ja) 2016-10-24 2022-05-13 コーニング インコーポレイテッド シート状ガラス基体のレーザに基づく加工のための基体処理ステーション
KR102499027B1 (ko) * 2016-11-03 2023-02-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US10730147B2 (en) * 2016-11-11 2020-08-04 Lg Chem, Ltd. Method of forming pattern for a large area liquid crystal device
CN110800089B (zh) 2017-03-31 2024-03-08 尼尔森科学有限公司 三维半导体制造
CN107845741B (zh) * 2017-10-23 2019-05-07 武汉华星光电半导体显示技术有限公司 柔性基板剥离方法及柔性基板
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
KR102662392B1 (ko) 2018-11-22 2024-05-02 삼성디스플레이 주식회사 표시 장치 및 그것의 제조 방법
CN111435703B (zh) * 2019-01-14 2024-03-22 联华电子股份有限公司 磁隧穿结装置及其形成方法
CN109967872B (zh) * 2019-04-23 2021-05-07 苏州福唐智能科技有限公司 一种半导体激光焊接方法及其焊接结构
TW202445852A (zh) 2019-06-26 2024-11-16 日商索尼半導體解決方案公司 半導體裝置及其製造方法
KR20210049250A (ko) * 2019-10-24 2021-05-06 삼성디스플레이 주식회사 기판 가공 장치 및 기판 가공 방법
CN111965854B (zh) * 2020-08-28 2023-07-21 济南晶正电子科技有限公司 电光晶体薄膜及其制备方法，及电光调制器
DE112022002460T5 (de) 2021-05-07 2024-03-21 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384789A (ja) * 1986-09-26 1988-04-15 Semiconductor Energy Lab Co Ltd 光加工方法
US5708252A (en) * 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6261856B1 (en) * 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US4842677A (en) * 1988-02-05 1989-06-27 General Electric Company Excimer laser patterning of a novel resist using masked and maskless process steps
JPH01296623A (ja) * 1988-05-25 1989-11-30 Nec Corp 薄膜除去方法
JP3222326B2 (ja) * 1994-07-05 2001-10-29 理化学研究所 基板表面薄膜パターンの形成方法
JPH09152618A (ja) 1995-11-30 1997-06-10 Sony Corp 平板状表示パネルの製造方法
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
JP3852176B2 (ja) * 1997-09-26 2006-11-29 凸版印刷株式会社 レーザープラズマ加工された多層フィルム及びそのレーザープラズマ加工方法
AUPP699698A0 (en) * 1998-11-06 1998-12-03 Pacific Solar Pty Limited Indirect laser patterning of resist
JP2000223346A (ja) * 1999-02-03 2000-08-11 Alps Electric Co Ltd 薄膜積層体の製造方法
JP4588341B2 (ja) * 2003-03-24 2010-12-01 株式会社半導体エネルギー研究所 Ｉｃカード

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190042516A (ko) * 2019-04-15 2019-04-24 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102081708B1 (ko) * 2019-04-15 2020-02-27 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Also Published As

Publication number Publication date
US20080087629A1 (en) 2008-04-17
KR101325788B1 (ko) 2013-11-04
CN101271827B (zh) 2011-06-08
KR20080034809A (ko) 2008-04-22
CN101271827A (zh) 2008-09-24
JP2008147626A (ja) 2008-06-26
US7867907B2 (en) 2011-01-11

Similar Documents

Publication Publication Date Title
JP5201937B2 (ja) パターン形成方法、及び薄膜トランジスタの作製方法
US7749907B2 (en) Method for manufacturing semiconductor device
JP5205042B2 (ja) 半導体装置の作製方法
KR101420173B1 (ko) 반도체 장치의 제작방법
CN101114612B (zh) 显示器件的制造方法
KR101491981B1 (ko) 반도체 장치의 제작 방법
CN101118851B (zh) 半导体装置的制造方法
TWI427682B (zh) 顯示裝置的製造方法
US8222636B2 (en) Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus
KR101439103B1 (ko) 반도체 장치의 제조 방법
JP5227563B2 (ja) 半導体装置の作製方法
JP5147330B2 (ja) 半導体装置の作製方法
JP5329784B2 (ja) 半導体装置の作製方法
US7358165B2 (en) Semiconductor device and method for manufacturing semiconductor device
JP4954836B2 (ja) 半導体装置の作製方法
JP5030535B2 (ja) 半導体装置の作製方法
JP5314842B2 (ja) 半導体装置の作製方法
JP5276811B2 (ja) 半導体装置の作製方法
JP2008176095A (ja) パターン形成方法及び薄膜トランジスタの作製方法
JP2008047888A (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100805

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100805

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111213

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120724

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120905

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121120

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130110

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130205

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130212

R150 Certificate of patent or registration of utility model

Ref document number: 5201937

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160222

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160222

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees