JP5201853B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5201853B2
JP5201853B2 JP2007054466A JP2007054466A JP5201853B2 JP 5201853 B2 JP5201853 B2 JP 5201853B2 JP 2007054466 A JP2007054466 A JP 2007054466A JP 2007054466 A JP2007054466 A JP 2007054466A JP 5201853 B2 JP5201853 B2 JP 5201853B2
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Japan
Prior art keywords
layer
memory element
conductive layer
semiconductor
memory
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Expired - Fee Related
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JP2007054466A
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English (en)
Japanese (ja)
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JP2007273967A5 (enExample
JP2007273967A (ja
Inventor
幹央 湯川
希 杉澤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007054466A priority Critical patent/JP5201853B2/ja
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Publication of JP2007273967A5 publication Critical patent/JP2007273967A5/ja
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JP2007054466A 2006-03-10 2007-03-05 半導体装置 Expired - Fee Related JP5201853B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007054466A JP5201853B2 (ja) 2006-03-10 2007-03-05 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006066527 2006-03-10
JP2006066527 2006-03-10
JP2007054466A JP5201853B2 (ja) 2006-03-10 2007-03-05 半導体装置

Publications (3)

Publication Number Publication Date
JP2007273967A JP2007273967A (ja) 2007-10-18
JP2007273967A5 JP2007273967A5 (enExample) 2010-04-08
JP5201853B2 true JP5201853B2 (ja) 2013-06-05

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ID=38676388

Family Applications (1)

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JP2007054466A Expired - Fee Related JP5201853B2 (ja) 2006-03-10 2007-03-05 半導体装置

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JP (1) JP5201853B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5377839B2 (ja) * 2006-07-28 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
EP1883109B1 (en) 2006-07-28 2013-05-15 Semiconductor Energy Laboratory Co., Ltd. Memory element and method of manufacturing thereof
JP5014061B2 (ja) 2007-10-22 2012-08-29 日本分光株式会社 顕微測定装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1344223A4 (en) * 2000-10-31 2005-05-25 Univ California BISTABLE ORGANIC DEVICE AND ORGANIC MEMORY CELLS
US6552409B2 (en) * 2001-06-05 2003-04-22 Hewlett-Packard Development Company, Lp Techniques for addressing cross-point diode memory arrays
JP2004047791A (ja) * 2002-07-12 2004-02-12 Pioneer Electronic Corp 有機薄膜スイッチングメモリ素子及びメモリ装置
JP2005183619A (ja) * 2003-12-18 2005-07-07 Canon Inc 不揮発メモリ装置
JP4865248B2 (ja) * 2004-04-02 2012-02-01 株式会社半導体エネルギー研究所 半導体装置
KR101114770B1 (ko) * 2004-12-24 2012-03-05 삼성전자주식회사 비휘발성 유기 메모리 소자의 제조 방법 및 그에 의해수득된 비휘발성 유기 메모리 소자

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JP2007273967A (ja) 2007-10-18

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