JP5191373B2 - エピタキシャルウェーハの製造方法及び製造装置 - Google Patents

エピタキシャルウェーハの製造方法及び製造装置 Download PDF

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JP5191373B2
JP5191373B2 JP2008324795A JP2008324795A JP5191373B2 JP 5191373 B2 JP5191373 B2 JP 5191373B2 JP 2008324795 A JP2008324795 A JP 2008324795A JP 2008324795 A JP2008324795 A JP 2008324795A JP 5191373 B2 JP5191373 B2 JP 5191373B2
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single crystal
crystal substrate
silicon single
heater
temperature
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JP2010147350A5 (enExample
JP2010147350A (ja
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義信 森
八之進 末吉
健雄 田村
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Sumco Techxiv Corp
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Sumco Techxiv Corp
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JP2008324795A 2008-12-19 2008-12-19 エピタキシャルウェーハの製造方法及び製造装置 Active JP5191373B2 (ja)

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JP2008324795A JP5191373B2 (ja) 2008-12-19 2008-12-19 エピタキシャルウェーハの製造方法及び製造装置

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JP2008324795A JP5191373B2 (ja) 2008-12-19 2008-12-19 エピタキシャルウェーハの製造方法及び製造装置

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JP2010147350A JP2010147350A (ja) 2010-07-01
JP2010147350A5 JP2010147350A5 (enExample) 2012-08-30
JP5191373B2 true JP5191373B2 (ja) 2013-05-08

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5807522B2 (ja) * 2011-11-17 2015-11-10 信越半導体株式会社 エピタキシャル成長装置
US9200965B2 (en) * 2012-06-26 2015-12-01 Veeco Instruments Inc. Temperature control for GaN based materials
JP2014060219A (ja) * 2012-09-14 2014-04-03 Shin Etsu Handotai Co Ltd エピタキシャル成長装置
JP5920188B2 (ja) * 2012-11-26 2016-05-18 信越半導体株式会社 加熱装置
JP5602903B2 (ja) 2013-03-14 2014-10-08 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
KR102116508B1 (ko) * 2013-08-29 2020-05-28 에스케이실트론 주식회사 에피텍셜 웨이퍼 제조 장치
JP6198584B2 (ja) * 2013-11-21 2017-09-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
JP6309252B2 (ja) * 2013-11-21 2018-04-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
JP6241277B2 (ja) * 2013-12-27 2017-12-06 株式会社Sumco エピタキシャル成長装置
EP3488464B1 (en) * 2016-07-22 2021-09-08 Applied Materials, Inc. Heating modulators to improve epi uniformity tuning
US10446420B2 (en) 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
TWI861210B (zh) 2019-09-09 2024-11-11 美商應用材料股份有限公司 輸送反應氣體之處理系統與方法
CN111599722B (zh) * 2020-05-25 2023-04-14 北京北方华创微电子装备有限公司 一种半导体工艺设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03150365A (ja) * 1989-07-26 1991-06-26 Tokyo Electron Ltd 熱処理装置
US6064799A (en) * 1998-04-30 2000-05-16 Applied Materials, Inc. Method and apparatus for controlling the radial temperature gradient of a wafer while ramping the wafer temperature
JP2000138170A (ja) * 1998-10-30 2000-05-16 Applied Materials Inc 半導体製造装置
JP2002217110A (ja) * 2000-12-27 2002-08-02 Applied Materials Inc 加熱装置及びこれを用いた半導体製造装置
KR20040008193A (ko) * 2001-05-30 2004-01-28 에이에스엠 아메리카, 인코포레이티드 저온 로딩 및 소성

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