JP5188615B2 - プラズマ発生装置、プラズマ点火装置、ガスチャンバ、および半導体回路表面の洗浄方法 - Google Patents

プラズマ発生装置、プラズマ点火装置、ガスチャンバ、および半導体回路表面の洗浄方法 Download PDF

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Publication number
JP5188615B2
JP5188615B2 JP2011221092A JP2011221092A JP5188615B2 JP 5188615 B2 JP5188615 B2 JP 5188615B2 JP 2011221092 A JP2011221092 A JP 2011221092A JP 2011221092 A JP2011221092 A JP 2011221092A JP 5188615 B2 JP5188615 B2 JP 5188615B2
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plasma
high voltage
frequency signal
load electrode
electrode
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Japanese (ja)
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JP2012049139A (ja
JP2012049139A5 (enExample
Inventor
哲弥 歌野
前田　　徹
淳一 高平
正典 浜島
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Shinkawa Ltd
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Shinkawa Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Wire Bonding (AREA)
JP2011221092A 2011-10-05 2011-10-05 プラズマ発生装置、プラズマ点火装置、ガスチャンバ、および半導体回路表面の洗浄方法 Expired - Fee Related JP5188615B2 (ja)

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JP2011221092A JP5188615B2 (ja) 2011-10-05 2011-10-05 プラズマ発生装置、プラズマ点火装置、ガスチャンバ、および半導体回路表面の洗浄方法

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JP2011221092A JP5188615B2 (ja) 2011-10-05 2011-10-05 プラズマ発生装置、プラズマ点火装置、ガスチャンバ、および半導体回路表面の洗浄方法

Related Parent Applications (1)

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JP2009280581A Division JP4891384B2 (ja) 2009-12-10 2009-12-10 プラズマ発生装置

Publications (3)

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JP2012049139A JP2012049139A (ja) 2012-03-08
JP2012049139A5 JP2012049139A5 (enExample) 2012-04-19
JP5188615B2 true JP5188615B2 (ja) 2013-04-24

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102126948B1 (ko) * 2019-05-16 2020-06-25 주식회사 메디플 플라즈마 발생기판 및 발생장치
US12300516B2 (en) 2022-03-30 2025-05-13 Yamaha Robotics Holdings Co., Ltd. Wafer cleaning apparatus and bonding system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014184910A1 (ja) * 2013-05-15 2014-11-20 富士機械製造株式会社 プラズマ処理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6270567A (ja) * 1985-09-25 1987-04-01 Hitachi Ltd トリガ機構
JP2589599B2 (ja) * 1989-11-30 1997-03-12 住友精密工業株式会社 吹出型表面処理装置
JP3899597B2 (ja) * 1997-01-30 2007-03-28 セイコーエプソン株式会社 大気圧プラズマ生成方法および装置並びに表面処理方法
JP3719352B2 (ja) * 1999-07-23 2005-11-24 三菱電機株式会社 プラズマ発生用電源装置及びその製造方法
JP5089032B2 (ja) * 2005-10-12 2012-12-05 長野日本無線株式会社 プラズマ処理装置用自動整合器の制御方法
JP4963360B2 (ja) * 2006-01-31 2012-06-27 国立大学法人茨城大学 携帯型大気圧プラズマ発生装置
US7571732B2 (en) * 2006-03-28 2009-08-11 Asm Japan K.K. Ignition control of remote plasma unit
JP4787104B2 (ja) * 2006-07-31 2011-10-05 株式会社新川 ボンディング装置
WO2008023523A1 (en) * 2006-08-22 2008-02-28 National Institute Of Advanced Industrial Science And Technology Method of forming thin film by microplasma processing and apparatus for the same
JP2008091218A (ja) * 2006-10-02 2008-04-17 Seiko Epson Corp プラズマ処理装置
JP2008210599A (ja) * 2007-02-26 2008-09-11 Nagano Japan Radio Co プラズマ処理装置
JP4891384B2 (ja) * 2009-12-10 2012-03-07 株式会社新川 プラズマ発生装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102126948B1 (ko) * 2019-05-16 2020-06-25 주식회사 메디플 플라즈마 발생기판 및 발생장치
WO2020231136A1 (ko) * 2019-05-16 2020-11-19 주식회사 메디플 플라즈마 발생기판 및 발생장치
US12300516B2 (en) 2022-03-30 2025-05-13 Yamaha Robotics Holdings Co., Ltd. Wafer cleaning apparatus and bonding system

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JP2012049139A (ja) 2012-03-08

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