JP5188545B2 - 化合物半導体基板 - Google Patents

化合物半導体基板 Download PDF

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Publication number
JP5188545B2
JP5188545B2 JP2010153634A JP2010153634A JP5188545B2 JP 5188545 B2 JP5188545 B2 JP 5188545B2 JP 2010153634 A JP2010153634 A JP 2010153634A JP 2010153634 A JP2010153634 A JP 2010153634A JP 5188545 B2 JP5188545 B2 JP 5188545B2
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single crystal
layer
crystal layer
carbon
atoms
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JP2010153634A
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Japanese (ja)
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JP2011082494A5 (enExample
JP2011082494A (ja
Inventor
純 小宮山
健一 江里口
浩司 大石
芳久 阿部
晃 吉田
俊一 鈴木
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Coorstek KK
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Covalent Materials Corp
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Priority to JP2010153634A priority Critical patent/JP5188545B2/ja
Priority to US12/879,035 priority patent/US8212288B2/en
Priority to DE102010045196A priority patent/DE102010045196A1/de
Publication of JP2011082494A publication Critical patent/JP2011082494A/ja
Publication of JP2011082494A5 publication Critical patent/JP2011082494A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2010153634A 2009-09-14 2010-07-06 化合物半導体基板 Active JP5188545B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010153634A JP5188545B2 (ja) 2009-09-14 2010-07-06 化合物半導体基板
US12/879,035 US8212288B2 (en) 2009-09-14 2010-09-10 Compound semiconductor substrate comprising a multilayer buffer layer
DE102010045196A DE102010045196A1 (de) 2009-09-14 2010-09-13 Verbindungshalbleitersubstrat

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009211189 2009-09-14
JP2009211189 2009-09-14
JP2010153634A JP5188545B2 (ja) 2009-09-14 2010-07-06 化合物半導体基板

Publications (3)

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JP2011082494A JP2011082494A (ja) 2011-04-21
JP2011082494A5 JP2011082494A5 (enExample) 2012-10-18
JP5188545B2 true JP5188545B2 (ja) 2013-04-24

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JP2010153634A Active JP5188545B2 (ja) 2009-09-14 2010-07-06 化合物半導体基板

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US (1) US8212288B2 (enExample)
JP (1) JP5188545B2 (enExample)
DE (1) DE102010045196A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3364463A2 (en) 2017-02-20 2018-08-22 CoorsTek KK Nitride semiconductor substrate and method for manufactuing the same

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JP5707767B2 (ja) * 2010-07-29 2015-04-30 住友電気工業株式会社 半導体装置
JP5649112B2 (ja) 2010-07-30 2015-01-07 パナソニック株式会社 電界効果トランジスタ
JP5810293B2 (ja) * 2010-11-19 2015-11-11 パナソニックＩｐマネジメント株式会社 窒化物半導体装置
JP5624940B2 (ja) * 2011-05-17 2014-11-12 古河電気工業株式会社 半導体素子及びその製造方法
JP2012243886A (ja) * 2011-05-18 2012-12-10 Sharp Corp 半導体装置
US8796738B2 (en) * 2011-09-21 2014-08-05 International Rectifier Corporation Group III-V device structure having a selectively reduced impurity concentration
JP5912383B2 (ja) * 2011-10-03 2016-04-27 クアーズテック株式会社 窒化物半導体基板
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
JP6151487B2 (ja) 2012-07-10 2017-06-21 富士通株式会社 化合物半導体装置及びその製造方法
JP6002508B2 (ja) 2012-09-03 2016-10-05 住友化学株式会社 窒化物半導体ウェハ
JP2014072429A (ja) 2012-09-28 2014-04-21 Fujitsu Ltd 半導体装置
WO2014108946A1 (ja) 2013-01-10 2014-07-17 パナソニック株式会社 電界効果トランジスタ
EP3154092B1 (en) * 2013-02-15 2021-12-15 AZUR SPACE Solar Power GmbH P-doping of group iii-nitride buffer layer structure on a heterosubstrate
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
JP2014220407A (ja) * 2013-05-09 2014-11-20 ローム株式会社 窒化物半導体素子
JP2015053328A (ja) * 2013-09-05 2015-03-19 富士通株式会社 半導体装置
JP2015060987A (ja) * 2013-09-19 2015-03-30 富士通株式会社 半導体装置及び半導体装置の製造方法
JP2015070064A (ja) 2013-09-27 2015-04-13 富士通株式会社 半導体装置及び半導体装置の製造方法
JP6175009B2 (ja) * 2014-02-06 2017-08-02 住友化学株式会社 高耐圧窒化ガリウム系半導体デバイス及びその製造方法
JP6249868B2 (ja) * 2014-04-18 2017-12-20 サンケン電気株式会社 半導体基板及び半導体素子
JP2016004948A (ja) * 2014-06-18 2016-01-12 株式会社東芝 半導体装置
US9876143B2 (en) 2014-10-01 2018-01-23 Rayvio Corporation Ultraviolet light emitting device doped with boron
US9608103B2 (en) * 2014-10-02 2017-03-28 Toshiba Corporation High electron mobility transistor with periodically carbon doped gallium nitride
DE112015005069T5 (de) * 2014-11-07 2017-07-20 Sumitomo Chemical Company, Limited Halbleiterwafer und Verfahren zum Prüfen eines Halbleiterwafers
FR3028670B1 (fr) * 2014-11-18 2017-12-22 Commissariat Energie Atomique Structure semi-conductrice a couche de semi-conducteur du groupe iii-v ou ii-vi comprenant une structure cristalline a mailles cubiques ou hexagonales
JP6473017B2 (ja) 2015-03-09 2019-02-20 エア・ウォーター株式会社 化合物半導体基板
TW201637078A (zh) * 2015-04-01 2016-10-16 環球晶圓股份有限公司 半導體元件
JP2017163050A (ja) * 2016-03-10 2017-09-14 株式会社東芝 半導体装置
JP6233476B2 (ja) * 2016-09-07 2017-11-22 富士通株式会社 化合物半導体装置
US20210151314A1 (en) * 2017-12-19 2021-05-20 Sumco Corporation Method for manufacturing group iii nitride semiconductor substrate
JP7179706B2 (ja) * 2018-12-12 2022-11-29 クアーズテック株式会社 窒化物半導体基板
US10825895B2 (en) 2018-12-12 2020-11-03 Coorstek Kk Nitride semiconductor substrate
JP7158272B2 (ja) * 2018-12-25 2022-10-21 エア・ウォーター株式会社 化合物半導体基板
US12176430B2 (en) * 2020-07-24 2024-12-24 Vanguard International Semiconductor Corporation Semiconductor structure and semiconductor device
JPWO2022176412A1 (enExample) * 2021-02-22 2022-08-25
JP7388422B2 (ja) * 2021-12-23 2023-11-29 信越半導体株式会社 窒化物半導体基板の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10290051A (ja) * 1997-04-16 1998-10-27 Furukawa Electric Co Ltd:The 半導体装置とその製造方法
JP3648386B2 (ja) * 1998-07-08 2005-05-18 株式会社東芝 半導体素子およびウェーハならびにそれらの製造方法
JP2002100837A (ja) * 2000-09-25 2002-04-05 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP2003059948A (ja) * 2001-08-20 2003-02-28 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP4514584B2 (ja) * 2004-11-16 2010-07-28 富士通株式会社 化合物半導体装置及びその製造方法
JP4792814B2 (ja) * 2005-05-26 2011-10-12 住友電気工業株式会社 高電子移動度トランジスタ、電界効果トランジスタ、エピタキシャル基板、エピタキシャル基板を作製する方法およびｉｉｉ族窒化物系トランジスタを作製する方法
JP2007067077A (ja) 2005-08-30 2007-03-15 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体素子およびその製造方法
JP5064824B2 (ja) * 2006-02-20 2012-10-31 古河電気工業株式会社 半導体素子
JP5224311B2 (ja) 2007-01-05 2013-07-03 古河電気工業株式会社 半導体電子デバイス
JP2010239034A (ja) * 2009-03-31 2010-10-21 Furukawa Electric Co Ltd:The 半導体装置の製造方法および半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3364463A2 (en) 2017-02-20 2018-08-22 CoorsTek KK Nitride semiconductor substrate and method for manufactuing the same

Also Published As

Publication number Publication date
US20110062556A1 (en) 2011-03-17
DE102010045196A1 (de) 2011-03-24
JP2011082494A (ja) 2011-04-21
US8212288B2 (en) 2012-07-03

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