JP5188385B2 - プラズマ処理装置及びプラズマ処理装置の運転方法 - Google Patents

プラズマ処理装置及びプラズマ処理装置の運転方法 Download PDF

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Publication number
JP5188385B2
JP5188385B2 JP2008331817A JP2008331817A JP5188385B2 JP 5188385 B2 JP5188385 B2 JP 5188385B2 JP 2008331817 A JP2008331817 A JP 2008331817A JP 2008331817 A JP2008331817 A JP 2008331817A JP 5188385 B2 JP5188385 B2 JP 5188385B2
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Japan
Prior art keywords
wafer
gas
processing apparatus
plasma
processing chamber
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JP2008331817A
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English (en)
Japanese (ja)
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JP2010153678A (ja
JP2010153678A5 (enExample
Inventor
裕穂 北田
和則 中本
洋輔 酒井
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Publication date
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Priority to JP2008331817A priority Critical patent/JP5188385B2/ja
Priority to US12/379,641 priority patent/US8828257B2/en
Publication of JP2010153678A publication Critical patent/JP2010153678A/ja
Publication of JP2010153678A5 publication Critical patent/JP2010153678A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2008331817A 2008-12-26 2008-12-26 プラズマ処理装置及びプラズマ処理装置の運転方法 Active JP5188385B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008331817A JP5188385B2 (ja) 2008-12-26 2008-12-26 プラズマ処理装置及びプラズマ処理装置の運転方法
US12/379,641 US8828257B2 (en) 2008-12-26 2009-02-26 Plasma processing apparatus and operation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008331817A JP5188385B2 (ja) 2008-12-26 2008-12-26 プラズマ処理装置及びプラズマ処理装置の運転方法

Publications (3)

Publication Number Publication Date
JP2010153678A JP2010153678A (ja) 2010-07-08
JP2010153678A5 JP2010153678A5 (enExample) 2012-02-16
JP5188385B2 true JP5188385B2 (ja) 2013-04-24

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JP2008331817A Active JP5188385B2 (ja) 2008-12-26 2008-12-26 プラズマ処理装置及びプラズマ処理装置の運転方法

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Country Link
US (1) US8828257B2 (enExample)
JP (1) JP5188385B2 (enExample)

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KR101307111B1 (ko) * 2010-08-24 2013-09-11 닛신 이온기기 가부시기가이샤 플라즈마 발생 장치
US9076644B2 (en) * 2011-01-18 2015-07-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus, substrate supporter and method of manufacturing semiconductor device
KR102050820B1 (ko) * 2012-12-06 2019-12-03 세메스 주식회사 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
JP6017328B2 (ja) * 2013-01-22 2016-10-26 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6184760B2 (ja) * 2013-06-11 2017-08-23 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6199638B2 (ja) * 2013-07-16 2017-09-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6322508B2 (ja) * 2014-07-22 2018-05-09 株式会社アルバック 真空処理装置
JP6435135B2 (ja) 2014-08-26 2018-12-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2016136554A (ja) 2015-01-23 2016-07-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN106607320B (zh) * 2016-12-22 2019-10-01 武汉华星光电技术有限公司 适用于柔性基板的热真空干燥装置
JP7030414B2 (ja) * 2017-02-14 2022-03-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及びその装置
KR102030471B1 (ko) * 2017-07-25 2019-10-14 세메스 주식회사 리프트 핀 유닛 및 이를 구비하는 기판 지지 유닛
KR20190056552A (ko) 2017-11-17 2019-05-27 세메스 주식회사 지지 유닛 및 이를 가지는 기판 처리 장치
JP7004589B2 (ja) * 2018-02-05 2022-02-10 東京エレクトロン株式会社 昇降機構、載置台及びプラズマ処理装置
US11121010B2 (en) 2018-02-15 2021-09-14 Tokyo Electron Limited Plasma processing apparatus
JP7214021B2 (ja) * 2018-03-29 2023-01-27 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
RU2685353C1 (ru) * 2018-10-02 2019-04-18 Общество с ограниченной ответственностью "ТОРЕГ" Насосная установка
US10944697B2 (en) * 2019-03-26 2021-03-09 Microsoft Technology Licensing, Llc Sliding window buffer for minimum local resource requirements
CN112447579B (zh) * 2019-09-04 2023-10-31 中微半导体设备(上海)股份有限公司 一种等离子体处理器、晶片顶升装置及其方法
KR102757512B1 (ko) * 2019-11-25 2025-01-20 삼성전자주식회사 리프트 장치 및 이를 포함하는 기판 처리 장치
CN113035682B (zh) * 2019-12-25 2023-03-31 中微半导体设备(上海)股份有限公司 一种下电极组件及其等离子体处理装置
CN113764322B (zh) * 2021-09-03 2024-05-31 中科晶源微电子技术（北京）有限公司 承载装置、晶片转移装置、腔体装置、和晶片处理设备
KR102504269B1 (ko) * 2021-11-11 2023-02-28 피에스케이 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
JP7779630B2 (ja) * 2021-12-20 2025-12-03 東京エレクトロン株式会社 基板処理装置、および基板取り出し方法
WO2024064049A1 (en) * 2022-09-23 2024-03-28 Lam Research Corporation Bellows seal for low thru-force actuation of temperature probe across vacuum interface
CN115881614A (zh) * 2022-11-10 2023-03-31 北京北方华创微电子装备有限公司 半导体工艺腔室及其承载装置
CN116230590A (zh) * 2023-02-24 2023-06-06 上海稷以科技有限公司 一种具有腔体自动压力平衡组件的晶圆设备及运行方法

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JPH07249586A (ja) 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
JP3714248B2 (ja) 1993-12-22 2005-11-09 東京エレクトロン株式会社 処理装置及び処理方法
US5856906A (en) * 1997-05-12 1999-01-05 Applied Materials, Inc. Backside gas quick dump apparatus for a semiconductor wafer processing system
TW594835B (en) * 2000-05-09 2004-06-21 Tokyo Electron Ltd System for coating and developing
US6646857B2 (en) 2001-03-30 2003-11-11 Lam Research Corporation Semiconductor wafer lifting device and methods for implementing the same
JP4354243B2 (ja) * 2003-04-21 2009-10-28 東京エレクトロン株式会社 被処理体の昇降機構及び処理装置
JP4673578B2 (ja) * 2004-05-21 2011-04-20 ルネサスエレクトロニクス株式会社 半導体製造装置
TW200709296A (en) * 2005-05-31 2007-03-01 Tokyo Electron Ltd Plasma treatment apparatus and plasma treatment method
KR20070099960A (ko) * 2006-04-06 2007-10-10 삼성전자주식회사 반도체 식각장치
EP2034296B1 (en) * 2007-09-07 2012-09-26 Imec Quantification of hydrophobic and hydrophilic properties of materials

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Publication number Publication date
US20100163403A1 (en) 2010-07-01
JP2010153678A (ja) 2010-07-08
US8828257B2 (en) 2014-09-09

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