JP5183013B2 - レーザモジュールおよび外部共振型レーザの波長制御方法 - Google Patents

レーザモジュールおよび外部共振型レーザの波長制御方法 Download PDF

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Publication number
JP5183013B2
JP5183013B2 JP2005019597A JP2005019597A JP5183013B2 JP 5183013 B2 JP5183013 B2 JP 5183013B2 JP 2005019597 A JP2005019597 A JP 2005019597A JP 2005019597 A JP2005019597 A JP 2005019597A JP 5183013 B2 JP5183013 B2 JP 5183013B2
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Japan
Prior art keywords
wavelength
etalon
laser
peak
light
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Expired - Fee Related
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JP2005019597A
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English (en)
Japanese (ja)
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JP2006210581A5 (enExample
JP2006210581A (ja
Inventor
敏生 東
康之 山内
エマニュエル，ル，タヤンディエ，デ，ガボリ
宏和 田中
準治 渡辺
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2005019597A priority Critical patent/JP5183013B2/ja
Priority to EP06712454A priority patent/EP1850431A4/en
Priority to PCT/JP2006/301288 priority patent/WO2006080422A1/ja
Publication of JP2006210581A publication Critical patent/JP2006210581A/ja
Priority to US11/878,706 priority patent/US7701984B2/en
Publication of JP2006210581A5 publication Critical patent/JP2006210581A5/ja
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Publication of JP5183013B2 publication Critical patent/JP5183013B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Crystal (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
JP2005019597A 2005-01-27 2005-01-27 レーザモジュールおよび外部共振型レーザの波長制御方法 Expired - Fee Related JP5183013B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005019597A JP5183013B2 (ja) 2005-01-27 2005-01-27 レーザモジュールおよび外部共振型レーザの波長制御方法
EP06712454A EP1850431A4 (en) 2005-01-27 2006-01-27 Laser module and method for controlling the wavelength of an external resonance laser
PCT/JP2006/301288 WO2006080422A1 (ja) 2005-01-27 2006-01-27 レーザモジュールおよび外部共振型レーザの波長制御方法
US11/878,706 US7701984B2 (en) 2005-01-27 2007-07-26 Laser module and method of controlling wavelength of external cavity laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005019597A JP5183013B2 (ja) 2005-01-27 2005-01-27 レーザモジュールおよび外部共振型レーザの波長制御方法

Publications (3)

Publication Number Publication Date
JP2006210581A JP2006210581A (ja) 2006-08-10
JP2006210581A5 JP2006210581A5 (enExample) 2008-03-06
JP5183013B2 true JP5183013B2 (ja) 2013-04-17

Family

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Family Applications (1)

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JP2005019597A Expired - Fee Related JP5183013B2 (ja) 2005-01-27 2005-01-27 レーザモジュールおよび外部共振型レーザの波長制御方法

Country Status (4)

Country Link
US (1) US7701984B2 (enExample)
EP (1) EP1850431A4 (enExample)
JP (1) JP5183013B2 (enExample)
WO (1) WO2006080422A1 (enExample)

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JP5008831B2 (ja) 2005-02-03 2012-08-22 住友電工デバイス・イノベーション株式会社 レーザ装置、レーザ装置の制御装置、レーザ装置の制御方法、レーザ装置の波長切換方法およびレーザ装置の制御データ
WO2007004509A1 (ja) 2005-07-01 2007-01-11 Nec Corporation 外部共振器型波長可変レーザ装置および光出力モジュール
US7773300B2 (en) 2006-05-12 2010-08-10 Semrock, Inc. Multiphoton fluorescence filters
JP2008198725A (ja) * 2007-02-09 2008-08-28 Fibest Ltd 波長可変光源
US8958156B1 (en) 2007-05-30 2015-02-17 Semrock, Inc. Interference filter for non-zero angle of incidence spectroscopy
US9354370B1 (en) 2007-09-25 2016-05-31 Semrock, Inc. Optical thin-film notch filter with very wide pass band regions
JP2009147149A (ja) 2007-12-14 2009-07-02 Tecdia Kk チューナブルレーザモジュール
JP2009147102A (ja) * 2007-12-14 2009-07-02 Tecdia Kk 光通信用デバイスの制御方式及び光通信用デバイスの制御方法
JP5154688B2 (ja) * 2008-04-11 2013-02-27 グーグル・インコーポレーテッド 外部キャビティレーザにおける光信号の振幅変調を抑えるための方法および装置
EP2351265B1 (en) * 2008-12-08 2013-02-27 Nokia Siemens Networks OY Coherent optical system comprising a tunable local oscillator
US8879150B1 (en) 2009-03-20 2014-11-04 Semrock, Inc. Optical thin-film polarizing bandpass filter
US20100322269A1 (en) * 2009-06-17 2010-12-23 Cogo Optronics, Inc. Tunable laser
US8441710B2 (en) 2010-01-08 2013-05-14 Semrock, Inc. Tunable thin-film filter
US8837536B2 (en) * 2010-04-07 2014-09-16 Cymer, Llc Method and apparatus for controlling light bandwidth
KR101208109B1 (ko) * 2010-11-04 2012-12-05 주식회사 포벨 파장 가변 필터 및 이를 이용한 파장 가변 외부 공진 레이저
JP6253082B2 (ja) * 2012-07-31 2017-12-27 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
US9304237B1 (en) 2012-12-10 2016-04-05 Semrock, Inc. Tunable band-pass filter
EP2905851B1 (en) * 2014-02-05 2022-04-06 Huawei Technologies Co., Ltd. Optical lasing device and method for generating a lasing mode in such device
EP2933886B1 (en) * 2014-04-16 2019-08-28 DirectPhotonics Industries GmbH Laser beam generating device and method for adjusting a wavelength of a laser beam
KR101885782B1 (ko) 2015-09-25 2018-08-08 (주)엠이엘텔레콤 파장가변 광송신기
US10571672B2 (en) * 2016-08-12 2020-02-25 The Regents Of The University Of California Filter array based ultrafast compressive image sensor
JP2021120727A (ja) * 2020-01-31 2021-08-19 レーザーテック株式会社 フィルタ
CN112415489B (zh) * 2020-12-10 2023-07-21 北京遥测技术研究所 一种星载固体隙标准具

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JPH09260792A (ja) * 1996-03-25 1997-10-03 Ando Electric Co Ltd 外部共振器型波長可変ｌｄ光源
JPH09307160A (ja) * 1996-05-13 1997-11-28 Hitachi Ltd レーザ装置
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US6205159B1 (en) * 1997-06-23 2001-03-20 Newport Corporation Discrete wavelength liquid crystal tuned external cavity diode laser
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Also Published As

Publication number Publication date
EP1850431A4 (en) 2011-03-09
US20070268568A1 (en) 2007-11-22
US7701984B2 (en) 2010-04-20
WO2006080422A1 (ja) 2006-08-03
EP1850431A1 (en) 2007-10-31
JP2006210581A (ja) 2006-08-10

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