JP5178561B2 - パターン検査方法、パターン検査装置、フォトマスク製造方法、およびパターン転写方法 - Google Patents

パターン検査方法、パターン検査装置、フォトマスク製造方法、およびパターン転写方法 Download PDF

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Publication number
JP5178561B2
JP5178561B2 JP2009025473A JP2009025473A JP5178561B2 JP 5178561 B2 JP5178561 B2 JP 5178561B2 JP 2009025473 A JP2009025473 A JP 2009025473A JP 2009025473 A JP2009025473 A JP 2009025473A JP 5178561 B2 JP5178561 B2 JP 5178561B2
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Prior art keywords
pattern
fourier transform
photomask
transform image
unit
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JP2009025473A
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English (en)
Japanese (ja)
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JP2010181296A (ja
Inventor
文明 東
隆之 飯塚
恒彦 園田
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Hoya Corp
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Hoya Corp
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Priority to JP2009025473A priority Critical patent/JP5178561B2/ja
Priority to TW099101362A priority patent/TWI413768B/zh
Priority to KR1020100010807A priority patent/KR101216803B1/ko
Priority to CN201010113612.3A priority patent/CN101799433B/zh
Publication of JP2010181296A publication Critical patent/JP2010181296A/ja
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Publication of JP5178561B2 publication Critical patent/JP5178561B2/ja
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/7065Defects, e.g. optical inspection of patterned layer for defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2009025473A 2009-02-06 2009-02-06 パターン検査方法、パターン検査装置、フォトマスク製造方法、およびパターン転写方法 Active JP5178561B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009025473A JP5178561B2 (ja) 2009-02-06 2009-02-06 パターン検査方法、パターン検査装置、フォトマスク製造方法、およびパターン転写方法
TW099101362A TWI413768B (zh) 2009-02-06 2010-01-19 圖案檢查方法、圖案檢查裝置、光罩製造方法、及圖案轉寫方法
KR1020100010807A KR101216803B1 (ko) 2009-02-06 2010-02-05 패턴 검사 방법, 패턴 검사 장치, 포토마스크 제조 방법, 및 패턴 전사 방법
CN201010113612.3A CN101799433B (zh) 2009-02-06 2010-02-05 图案检查方法及装置、光掩模制造方法以及图案转印方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009025473A JP5178561B2 (ja) 2009-02-06 2009-02-06 パターン検査方法、パターン検査装置、フォトマスク製造方法、およびパターン転写方法

Publications (2)

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JP2010181296A JP2010181296A (ja) 2010-08-19
JP5178561B2 true JP5178561B2 (ja) 2013-04-10

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JP2009025473A Active JP5178561B2 (ja) 2009-02-06 2009-02-06 パターン検査方法、パターン検査装置、フォトマスク製造方法、およびパターン転写方法

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JP (1) JP5178561B2 (zh)
KR (1) KR101216803B1 (zh)
CN (1) CN101799433B (zh)
TW (1) TWI413768B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5593209B2 (ja) * 2010-11-30 2014-09-17 株式会社日立ハイテクノロジーズ 検査装置
KR101306289B1 (ko) * 2011-09-15 2013-09-09 (주) 인텍플러스 평판 패널 검사방법
KR102097342B1 (ko) 2013-06-21 2020-04-07 삼성디스플레이 주식회사 증착 마스크의 바코드 인식 방법 및 그 인식 장치
TWI557407B (zh) * 2014-03-05 2016-11-11 晶元光電股份有限公司 晶粒檢測方法
CN106290390B (zh) * 2015-05-24 2019-11-26 上海微电子装备(集团)股份有限公司 缺陷检测装置及方法
JP6669481B2 (ja) * 2015-12-04 2020-03-18 株式会社ブイ・テクノロジー 検査装置
US10295477B2 (en) * 2017-01-26 2019-05-21 Shin-Etsu Chemical Co., Ltd. Methods for defect inspection, sorting, and manufacturing photomask blank
KR102037395B1 (ko) * 2017-09-25 2019-10-28 동우 화인켐 주식회사 투과 광학계 검사 장치 및 이를 이용한 필름 결함 검사 방법
CN110412052B (zh) * 2019-08-12 2022-02-15 艾尔玛科技股份有限公司 一种曲面热压印质量检测方法及系统
CN114445402B (zh) * 2022-04-02 2022-06-24 深圳市龙图光电有限公司 半导体芯片用掩模版贴膜精度检测方法及检测装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3443197B2 (ja) * 1995-01-19 2003-09-02 松下電器産業株式会社 フォトマスクの検査方法およびフォトマスクの検査装置
US5777729A (en) * 1996-05-07 1998-07-07 Nikon Corporation Wafer inspection method and apparatus using diffracted light
US6195460B1 (en) 1996-11-01 2001-02-27 Yamatake Corporation Pattern extraction apparatus
KR100486270B1 (ko) 2002-10-07 2005-04-29 삼성전자주식회사 웨이퍼 상의 임계 선폭을 제어할 수 있는 포토 마스크제조 방법, 이에 의한 포토 마스크 및 이를 이용한 노광방법
JP2005291874A (ja) * 2004-03-31 2005-10-20 Hoya Corp パターンのムラ欠陥検査方法及び装置
JP4661441B2 (ja) * 2005-08-05 2011-03-30 凸版印刷株式会社 周期構造の欠陥測定装置
CN1940540A (zh) * 2005-09-30 2007-04-04 Hoya株式会社 缺陷检查装置和缺陷检查方法
JP4993934B2 (ja) * 2006-03-31 2012-08-08 Hoya株式会社 パターン欠陥検査方法、フォトマスクの製造方法、及び表示デバイス用基板の製造方法
JP2008170371A (ja) * 2007-01-15 2008-07-24 Hoya Corp パターン欠陥検査方法、及びパターン欠陥検査装置
JP4869129B2 (ja) * 2007-03-30 2012-02-08 Hoya株式会社 パターン欠陥検査方法
US7882480B2 (en) * 2007-06-04 2011-02-01 Asml Netherlands B.V. System and method for model-based sub-resolution assist feature generation
JP5135899B2 (ja) * 2007-06-07 2013-02-06 凸版印刷株式会社 周期性パターンのムラ検査方法及びムラ検査装置

Also Published As

Publication number Publication date
CN101799433B (zh) 2014-04-16
CN101799433A (zh) 2010-08-11
KR101216803B1 (ko) 2012-12-28
TWI413768B (zh) 2013-11-01
TW201033606A (en) 2010-09-16
KR20100090657A (ko) 2010-08-16
JP2010181296A (ja) 2010-08-19

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