KR101216803B1 - 패턴 검사 방법, 패턴 검사 장치, 포토마스크 제조 방법, 및 패턴 전사 방법 - Google Patents

패턴 검사 방법, 패턴 검사 장치, 포토마스크 제조 방법, 및 패턴 전사 방법 Download PDF

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Publication number
KR101216803B1
KR101216803B1 KR1020100010807A KR20100010807A KR101216803B1 KR 101216803 B1 KR101216803 B1 KR 101216803B1 KR 1020100010807 A KR1020100010807 A KR 1020100010807A KR 20100010807 A KR20100010807 A KR 20100010807A KR 101216803 B1 KR101216803 B1 KR 101216803B1
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KR
South Korea
Prior art keywords
pattern
fourier transform
photomask
transform image
inspection
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KR1020100010807A
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English (en)
Korean (ko)
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KR20100090657A (ko
Inventor
후미아끼 히가시
다까시 이이즈까
쯔네히꼬 소노다
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호야 가부시키가이샤
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Publication of KR101216803B1 publication Critical patent/KR101216803B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020100010807A 2009-02-06 2010-02-05 패턴 검사 방법, 패턴 검사 장치, 포토마스크 제조 방법, 및 패턴 전사 방법 KR101216803B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-025473 2009-02-06
JP2009025473A JP5178561B2 (ja) 2009-02-06 2009-02-06 パターン検査方法、パターン検査装置、フォトマスク製造方法、およびパターン転写方法

Publications (2)

Publication Number Publication Date
KR20100090657A KR20100090657A (ko) 2010-08-16
KR101216803B1 true KR101216803B1 (ko) 2012-12-28

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KR1020100010807A KR101216803B1 (ko) 2009-02-06 2010-02-05 패턴 검사 방법, 패턴 검사 장치, 포토마스크 제조 방법, 및 패턴 전사 방법

Country Status (4)

Country Link
JP (1) JP5178561B2 (zh)
KR (1) KR101216803B1 (zh)
CN (1) CN101799433B (zh)
TW (1) TWI413768B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5593209B2 (ja) * 2010-11-30 2014-09-17 株式会社日立ハイテクノロジーズ 検査装置
KR101306289B1 (ko) 2011-09-15 2013-09-09 (주) 인텍플러스 평판 패널 검사방법
KR102097342B1 (ko) 2013-06-21 2020-04-07 삼성디스플레이 주식회사 증착 마스크의 바코드 인식 방법 및 그 인식 장치
TWI557407B (zh) * 2014-03-05 2016-11-11 晶元光電股份有限公司 晶粒檢測方法
CN106290390B (zh) * 2015-05-24 2019-11-26 上海微电子装备（集团）股份有限公司 缺陷检测装置及方法
JP6669481B2 (ja) * 2015-12-04 2020-03-18 株式会社ブイ・テクノロジー 検査装置
US10295477B2 (en) * 2017-01-26 2019-05-21 Shin-Etsu Chemical Co., Ltd. Methods for defect inspection, sorting, and manufacturing photomask blank
KR102037395B1 (ko) * 2017-09-25 2019-10-28 동우 화인켐 주식회사 투과 광학계 검사 장치 및 이를 이용한 필름 결함 검사 방법
CN110412052B (zh) * 2019-08-12 2022-02-15 艾尔玛科技股份有限公司 一种曲面热压印质量检测方法及系统
CN114445402B (zh) * 2022-04-02 2022-06-24 深圳市龙图光电有限公司 半导体芯片用掩模版贴膜精度检测方法及检测装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295586B1 (ko) 1996-11-01 2001-08-07 사토 요시하루 패턴 추출장치
KR100486270B1 (ko) 2002-10-07 2005-04-29 삼성전자주식회사 웨이퍼 상의 임계 선폭을 제어할 수 있는 포토 마스크제조 방법, 이에 의한 포토 마스크 및 이를 이용한 노광방법
US20080301620A1 (en) 2007-06-04 2008-12-04 Brion Technologies, Inc. System and method for model-based sub-resolution assist feature generation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3443197B2 (ja) * 1995-01-19 2003-09-02 松下電器産業株式会社 フォトマスクの検査方法およびフォトマスクの検査装置
US5777729A (en) * 1996-05-07 1998-07-07 Nikon Corporation Wafer inspection method and apparatus using diffracted light
JP2005291874A (ja) * 2004-03-31 2005-10-20 Hoya Corp パターンのムラ欠陥検査方法及び装置
JP4661441B2 (ja) * 2005-08-05 2011-03-30 凸版印刷株式会社 周期構造の欠陥測定装置
CN1940540A (zh) * 2005-09-30 2007-04-04 Hoya株式会社 缺陷检查装置和缺陷检查方法
JP4993934B2 (ja) * 2006-03-31 2012-08-08 Ｈｏｙａ株式会社 パターン欠陥検査方法、フォトマスクの製造方法、及び表示デバイス用基板の製造方法
JP2008170371A (ja) * 2007-01-15 2008-07-24 Hoya Corp パターン欠陥検査方法、及びパターン欠陥検査装置
JP4869129B2 (ja) * 2007-03-30 2012-02-08 Ｈｏｙａ株式会社 パターン欠陥検査方法
JP5135899B2 (ja) * 2007-06-07 2013-02-06 凸版印刷株式会社 周期性パターンのムラ検査方法及びムラ検査装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295586B1 (ko) 1996-11-01 2001-08-07 사토 요시하루 패턴 추출장치
KR100486270B1 (ko) 2002-10-07 2005-04-29 삼성전자주식회사 웨이퍼 상의 임계 선폭을 제어할 수 있는 포토 마스크제조 방법, 이에 의한 포토 마스크 및 이를 이용한 노광방법
US20080301620A1 (en) 2007-06-04 2008-12-04 Brion Technologies, Inc. System and method for model-based sub-resolution assist feature generation

Also Published As

Publication number Publication date
KR20100090657A (ko) 2010-08-16
CN101799433A (zh) 2010-08-11
TWI413768B (zh) 2013-11-01
JP2010181296A (ja) 2010-08-19
JP5178561B2 (ja) 2013-04-10
CN101799433B (zh) 2014-04-16
TW201033606A (en) 2010-09-16

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