JP5178178B2 - Photosensitive resin composition and method for producing fired product pattern obtained using the same - Google Patents
Photosensitive resin composition and method for producing fired product pattern obtained using the same Download PDFInfo
- Publication number
- JP5178178B2 JP5178178B2 JP2007327465A JP2007327465A JP5178178B2 JP 5178178 B2 JP5178178 B2 JP 5178178B2 JP 2007327465 A JP2007327465 A JP 2007327465A JP 2007327465 A JP2007327465 A JP 2007327465A JP 5178178 B2 JP5178178 B2 JP 5178178B2
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- Prior art keywords
- photosensitive resin
- acid
- resin composition
- pattern
- development
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011342 resin composition Substances 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000011347 resin Substances 0.000 claims description 33
- 229920005989 resin Polymers 0.000 claims description 33
- 238000003860 storage Methods 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 29
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010419 fine particle Substances 0.000 claims description 22
- 239000000843 powder Substances 0.000 claims description 18
- 239000000178 monomer Substances 0.000 claims description 10
- 239000003381 stabilizer Substances 0.000 claims description 9
- 239000003999 initiator Substances 0.000 claims description 7
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- UVZICZIVKIMRNE-UHFFFAOYSA-N thiodiacetic acid Chemical compound OC(=O)CSCC(O)=O UVZICZIVKIMRNE-UHFFFAOYSA-N 0.000 claims description 4
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 claims description 2
- 150000007513 acids Chemical class 0.000 claims 1
- 238000011161 development Methods 0.000 description 40
- 230000018109 developmental process Effects 0.000 description 40
- 230000000052 comparative effect Effects 0.000 description 27
- 239000010408 film Substances 0.000 description 17
- 239000002245 particle Substances 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 239000000049 pigment Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- -1 polyethylene Polymers 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 150000007519 polyprotic acids Polymers 0.000 description 6
- 150000008065 acid anhydrides Chemical class 0.000 description 5
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 125000003700 epoxy group Chemical group 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 238000001879 gelation Methods 0.000 description 4
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- 230000008719 thickening Effects 0.000 description 4
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 244000028419 Styrax benzoin Species 0.000 description 3
- 235000000126 Styrax benzoin Nutrition 0.000 description 3
- 235000008411 Sumatra benzointree Nutrition 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229960002130 benzoin Drugs 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 235000019382 gum benzoic Nutrition 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- 229910002012 Aerosil® Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(2+);cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
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- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
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- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 235000017550 sodium carbonate Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910002029 synthetic silica gel Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- HGTBAIVLETUVCG-UHFFFAOYSA-N (methylthio)acetic acid Chemical compound CSCC(O)=O HGTBAIVLETUVCG-UHFFFAOYSA-N 0.000 description 1
- XKSUVRWJZCEYQQ-UHFFFAOYSA-N 1,1-dimethoxyethylbenzene Chemical compound COC(C)(OC)C1=CC=CC=C1 XKSUVRWJZCEYQQ-UHFFFAOYSA-N 0.000 description 1
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- BOCJQSFSGAZAPQ-UHFFFAOYSA-N 1-chloroanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl BOCJQSFSGAZAPQ-UHFFFAOYSA-N 0.000 description 1
- CERJZAHSUZVMCH-UHFFFAOYSA-N 2,2-dichloro-1-phenylethanone Chemical compound ClC(Cl)C(=O)C1=CC=CC=C1 CERJZAHSUZVMCH-UHFFFAOYSA-N 0.000 description 1
- GIMQKKFOOYOQGB-UHFFFAOYSA-N 2,2-diethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)(OCC)C(=O)C1=CC=CC=C1 GIMQKKFOOYOQGB-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
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- FZEDWKOPSXCODY-UHFFFAOYSA-N 2-(carboxymethoxy)-2-phenylacetic acid Chemical compound OC(=O)COC(C(O)=O)C1=CC=CC=C1 FZEDWKOPSXCODY-UHFFFAOYSA-N 0.000 description 1
- SZMWJECJLNOCKO-UHFFFAOYSA-N 2-(carboxymethoxy)propanoic acid Chemical compound OC(=O)C(C)OCC(O)=O SZMWJECJLNOCKO-UHFFFAOYSA-N 0.000 description 1
- DLLMHEDYJQACRM-UHFFFAOYSA-N 2-(carboxymethyldisulfanyl)acetic acid Chemical compound OC(=O)CSSCC(O)=O DLLMHEDYJQACRM-UHFFFAOYSA-N 0.000 description 1
- GQECANUIPBFPLA-UHFFFAOYSA-N 2-(carboxymethylsulfanylcarbothioylsulfanyl)acetic acid Chemical compound OC(=O)CSC(=S)SCC(O)=O GQECANUIPBFPLA-UHFFFAOYSA-N 0.000 description 1
- NQYRPRVRVNFIKI-UHFFFAOYSA-N 2-(pyridin-4-yldisulfanyl)acetic acid Chemical compound N1=CC=C(C=C1)SSCC(=O)O NQYRPRVRVNFIKI-UHFFFAOYSA-N 0.000 description 1
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- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- GUCYFKSBFREPBC-UHFFFAOYSA-N [phenyl-(2,4,6-trimethylbenzoyl)phosphoryl]-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C(=O)C1=C(C)C=C(C)C=C1C GUCYFKSBFREPBC-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- ORBFAMHUKZLWSD-UHFFFAOYSA-N ethyl 2-(dimethylamino)benzoate Chemical compound CCOC(=O)C1=CC=CC=C1N(C)C ORBFAMHUKZLWSD-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007603 infrared drying Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- LXTZRIBXKVRLOA-UHFFFAOYSA-N padimate a Chemical compound CCCCCOC(=O)C1=CC=C(N(C)C)C=C1 LXTZRIBXKVRLOA-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Gas-Filled Discharge Tubes (AREA)
Description
本発明は、プラズマディスプレイパネル(以下、PDPと略称する)を構成する各種パターンの形成に用いられる感光性樹脂組成物とそれを用いた焼成物パターンの製造方法に関するものである。 The present invention relates to a photosensitive resin composition used for forming various patterns constituting a plasma display panel (hereinafter abbreviated as PDP) and a method for producing a fired product pattern using the same.
PDPは、プラズマ放電による発光を利用して画像その他の情報を表示する平面ディスプレイである。このPDPによる画像表示、特にカラー表示の原理は、前面ガラス基板と背面ガラス基板間の空間をリブ(隔壁)によって隔離することにより複数個のセル空間(放電空間)を形成し、前記前面ガラス基板と背面ガラス基板上にマトリクス状に配線された電極間に交流電圧を印加することにより、前記セル空間内にプラズマ放電を生じさせる。すなわち、前記複数個のセル空間内にはHe、Xe等の放電媒体であるガスが封入されており、また、セル空間を形成する前記背面ガラス基板内面に3原色を発光する蛍光体が塗布されている。前記マトリクス状に配線された電極間に電圧を印加することにより、各セル空間内にプラズマ放電が発生する。この放電により発生した紫外線により前記3原色を発光する蛍光体を励起させることにより、カラー表示が行われる。 The PDP is a flat display that displays images and other information using light emission by plasma discharge. The principle of image display by this PDP, particularly color display, is that the space between the front glass substrate and the back glass substrate is separated by ribs (partition walls) to form a plurality of cell spaces (discharge spaces), and the front glass substrate A plasma discharge is generated in the cell space by applying an AC voltage between the electrodes wired in a matrix on the back glass substrate. That is, a gas that is a discharge medium such as He and Xe is sealed in the plurality of cell spaces, and phosphors that emit three primary colors are applied to the inner surface of the rear glass substrate that forms the cell spaces. ing. Plasma discharge is generated in each cell space by applying a voltage between the electrodes arranged in a matrix. Color display is performed by exciting the phosphors emitting the three primary colors with ultraviolet rays generated by this discharge.
近年、このような構造のPDPにおいて、表示画像の高密度化、高精細度化が要求され、PDP表示パネルを構成する各種パターンの高密度化、高精細度化が要求されている。このような要求を満たす手段として、紫外線硬化型樹脂組成物を前面パネル又は背面パネル上にコーティングし、フォトリソグラフィー法による、露光、現像によるパターンニングが用いられてきた。この方法においては、一般にアルカリ現像が用いられており、そのため感光性ペーストはカルボキシル基を含有した有機高分子化合物が用いられている。 In recent years, in a PDP having such a structure, a high density and high definition of a display image are required, and a high density and high definition of various patterns constituting a PDP display panel are required. As means for satisfying such requirements, patterning by exposure and development using a photolithography method in which an ultraviolet curable resin composition is coated on a front panel or a back panel has been used. In this method, alkali development is generally used, and therefore an organic polymer compound containing a carboxyl group is used for the photosensitive paste.
しかし、感光性樹脂組成物を調製するために、上述のようなカルボキシル基を含有した有機高分子化合物に、ガラス粉末やセラミック粉末等の多価金属もしくはその酸化物を含有する粉末を配合すると得られる感光性樹脂組成物は、増粘やゲル化が発生しやすくなる。その理由は、粉末から溶出した多価イオンと有機高分子化合物のカルボキシル基がイオン架橋するためと考えられる。このような感光性樹脂組成物のゲル化や増粘が発生すると、例えば基板に感光性樹脂組成物をスクリーン印刷により塗布する際、ムラができ、均一に塗布することができず、使用に耐えないことがある。 However, in order to prepare a photosensitive resin composition, it is obtained by adding a powder containing a polyvalent metal such as glass powder or ceramic powder or an oxide thereof to an organic polymer compound containing a carboxyl group as described above. The resulting photosensitive resin composition is likely to be thickened or gelled. The reason is considered to be that the polyvalent ions eluted from the powder and the carboxyl group of the organic polymer compound are ion-crosslinked. When gelation or thickening of such a photosensitive resin composition occurs, for example, when the photosensitive resin composition is applied to a substrate by screen printing, unevenness cannot be achieved and uniform application is not possible. There may not be.
このような感光性樹脂組成物のゲル化や増粘を防止する方法として、従来、乳酸、りんご酸、クエン酸、シュウ酸等を保存安定剤として含有させることが提案されている(特許文献1参照)。しかしこの方法では、ゲル化や増粘を抑制する保存安定性を有してはいるが、感光性樹脂組成物を用いたパターンの解像度が低下し、微細パターンの形成には限界があった。
本発明は、このような従来技術が抱える課題を解決するためになされたものであり、その主たる目的は、保存安定性に優れると共に、微細パターンの形成に際しても現像性を低下させることなく、高精細なパターンの形成が可能な感光性樹脂組成物を提供すること、およびこれを用いた微細パターンの形成方法を提供することにある。 The present invention has been made in order to solve such problems of the prior art, and its main purpose is excellent storage stability and high development without reducing developability even when forming a fine pattern. An object of the present invention is to provide a photosensitive resin composition capable of forming a fine pattern, and to provide a method for forming a fine pattern using the same.
前記目的を達成するために、本発明の感光性樹脂組成物は、(A)ガラス微粒子及び導電性粉末の少なくとも1種からなる無機微粒子、(B)カルボキシル基含有樹脂、(C)光重合性モノマー、(D)光重合開始剤、(E)グリコール酸、チオグリコール酸、チオジグリコール酸の少なくとも一種の保存安定剤、を含有することを特徴としている。 In order to achieve the above object, the photosensitive resin composition of the present invention comprises (A) inorganic fine particles comprising at least one kind of glass fine particles and conductive powder , (B) carboxyl group-containing resin, and (C) photopolymerizable. monomer is characterized by containing at least one storage stabilizer, the (D) photopolymerization initiator, (E), thioglycolic acid, thio diglycolic acid.
本発明によれば、保存安定性に優れると共に、微細パターンの形成に際しても現像性を低下させることなく、高精細なパターンの形成が可能な感光性樹脂組成物が得られる。また、本発明の製造方法によれば、かかる感光性樹脂組成物を用いることにより、PDPパネルにおいて高精細な焼成物パターンの形成が可能となる。 According to the present invention, it is possible to obtain a photosensitive resin composition that is excellent in storage stability and capable of forming a high-definition pattern without deteriorating developability when forming a fine pattern. Further, according to the production method of the present invention, by using such a photosensitive resin composition, a high-definition fired product pattern can be formed in a PDP panel.
以下本発明の最良の実施形態について詳細に説明する。 The best embodiment of the present invention will be described in detail below.
本発明の感光性樹脂組成物は、(A)無機微粒子、(B)カルボキシル基含有樹脂、(C)光重合性モノマー、(D)光重合開始剤、及び (E) グリコール酸、チオグリコール酸及びチオジグリコール酸の少なくとも一種の保存安定剤を含有する。本発明は、例えばフレキシブルプリント配線板や柔軟性を要求される薄板のプリント配線板の製造方法に関する。 The photosensitive resin composition of the present invention comprises (A) inorganic fine particles, (B) carboxyl group-containing resin, (C) photopolymerizable monomer, (D) photopolymerization initiator, and (E) glycolic acid, thioglycolic acid And at least one storage stabilizer of thiodiglycolic acid . The present invention relates to a method for manufacturing a flexible printed wiring board or a thin printed wiring board that requires flexibility, for example.
以下、この感光性樹脂組成物の各成分について説明する。 Hereinafter, each component of the photosensitive resin composition will be described.
(A)無機微粒子としては、公知慣用の無機微粒子を用いることができ、特にガラス微粒子及び導電性粉末のうちの少なくとも1種を好適に用いることができる。 The (A) inorganic fine particles may be used conventionally known inorganic fine particles may be used particularly preferably at least one of the glass fine particles及 beauty conductive powder.
前記ガラス微粒子としては、ガラス転移点(Tg)が300〜500℃で、ガラス軟化点(Ts)が400〜600℃であるガラス、例えば酸化鉛、酸化ビスマス、酸化亜鉛または酸化リチウムを主成分とするガラスが好適に用いられる。また、解像度の点からは、平均粒径10μm以下、とりわけ5μm以下のガラス粉末を用いることが好ましい。 The glass fine particles mainly contain glass having a glass transition point (Tg) of 300 to 500 ° C. and a glass softening point (Ts) of 400 to 600 ° C., such as lead oxide, bismuth oxide, zinc oxide or lithium oxide. Glass to be used is preferably used. From the viewpoint of resolution, it is preferable to use glass powder having an average particle size of 10 μm or less, particularly 5 μm or less.
前記黒色顔料は、焼成物パターンに黒色が求められる場合に使用され、例えばCo、Ni、Cu、Fe、Mn、Al、Ru、La、Srの1種または2種以上の金属酸化物からなる黒色顔料を用いることができる。なかでも酸化コバルト微粒子、特に四三酸化コバルト微粒子を用いると、形成される黒色皮膜が緻密なものとなり、薄膜でも十分な黒さを呈することができるため好ましい。かかる黒色顔料は、その平均粒径が2μm以下、好ましくは0.1〜1μmの微粒子を用いることが望ましい。この理由は、平均粒径が2μm以下であれば、少量の添加でも密着性等を損なうことなく緻密な焼成皮膜を形成でき、充分な黒色度を得ることができるからである。一方、黒色顔料の平均粒径が2μmよりも大きくなると、焼成皮膜の緻密性が悪くなり、黒色度が低下しやすい。また、0.1μmより小さくなると隠蔽力が低下して透明感が現れることがあり、好ましくない。 The black pigment is used when black is required for the fired product pattern, for example, black made of one or more metal oxides of Co, Ni, Cu, Fe, Mn, Al, Ru, La, and Sr. Pigments can be used. In particular, it is preferable to use cobalt oxide fine particles, in particular, tribasic cobalt tetroxide fine particles, because the formed black film becomes dense and even a thin film can exhibit sufficient blackness. It is desirable to use fine particles having an average particle diameter of 2 μm or less, preferably 0.1 to 1 μm. This is because if the average particle size is 2 μm or less, a dense fired film can be formed without impairing adhesion and the like even with a small amount of addition, and sufficient blackness can be obtained. On the other hand, when the average particle diameter of the black pigment is larger than 2 μm, the denseness of the fired film is deteriorated, and the blackness is easily lowered. On the other hand, if the thickness is smaller than 0.1 μm, the hiding power is lowered and a transparency may appear, which is not preferable.
前記黒色顔料は、溶剤に分散したスラリーにして用いることが好ましい。このスラリーは、従来公知の方法に従って溶剤中に黒色顔料を分散させることによって調製することができる。例えば、溶剤と分散剤と黒色顔料をボールミル等の混合機を用いて混合し、調製する。なお、このスラリー中の顔料濃度は任意に設定することができるが、作業性などを考慮すると50〜80%が好ましい。 The black pigment is preferably used as a slurry dispersed in a solvent. This slurry can be prepared by dispersing a black pigment in a solvent according to a conventionally known method. For example, a solvent, a dispersant, and a black pigment are mixed and prepared using a mixer such as a ball mill. The pigment concentration in the slurry can be arbitrarily set, but is preferably 50 to 80% in consideration of workability and the like.
前記導電性粉末としては、銀(Ag)、金(Au)、ニッケル(Ni)、銅(Cu)、アルミニウム(Al)、スズ(Sn)、白金(Pt)、ルテニウム(Ru)などの金属粉単体とその合金の他、酸化スズ(SnO2)、酸化インジウム(In203)、ITO(Indium Tin Oxide)、酸化ルテニウム(RuO2)などを用いることができる。これらは単独でまたは2種以上の混合粉として用いることができる。 Examples of the conductive powder include silver (Ag), gold (Au), nickel (Ni), copper (Cu), aluminum (Al), tin (Sn), platinum (Pt), and ruthenium (Ru). In addition to simple substances and alloys thereof, tin oxide (SnO2), indium oxide (In203), ITO (Indium Tin Oxide), ruthenium oxide (RuO2), and the like can be used. These can be used alone or as a mixed powder of two or more.
前記導電性粉末の形状は、球状、フレーク状、デントライト状など種々のものを用いることができるが、光特性や分散性を考慮すると、球状のものを用いるのが好ましい。また、平均粒径としては、ライン形状の点から10μm以下のもの、好ましくは5μm以下のものを用いるのが望ましい。 Various shapes such as a spherical shape, a flake shape, and a dentrite shape can be used for the conductive powder, but it is preferable to use a spherical shape in consideration of optical characteristics and dispersibility. The average particle diameter is preferably 10 μm or less, preferably 5 μm or less from the viewpoint of the line shape.
これら導電性粉末は、樹脂組成物成分の合計量を100質量部とした時に、50〜2,000質量部となる割合で配合することが好ましい。導電性粉末の配合量が50質量部未満の場合、導体回路の線幅収縮や断線が生じやすくなり、一方2,000質量部を超えて多量に配合すると、光の透過を損ない、組成物の十分な光硬化性が得られ難くなる。さらに焼成後の皮膜の強度、基板への密着性向上のために、前記のガラス微粒子を金属粉100質量部当り、1〜30質量部の割合で添加することができる。 These conductive powders are preferably blended at a ratio of 50 to 2,000 parts by mass when the total amount of the resin composition components is 100 parts by mass. When the blending amount of the conductive powder is less than 50 parts by mass, the conductor circuit line width shrinkage or disconnection is likely to occur. On the other hand, when the blending amount exceeds 2,000 parts by mass, light transmission is impaired, It becomes difficult to obtain sufficient photocurability. Furthermore, in order to improve the strength of the film after firing and the adhesion to the substrate, the glass fine particles can be added at a ratio of 1 to 30 parts by mass per 100 parts by mass of the metal powder.
その他の無機微粒子としては、焼成物パターンに悪影響を及ぼさない範囲で、シルカ粉末、特に合成アモルファスシリカ微粉末を使用することができる。 As other inorganic fine particles, silk powder, particularly synthetic amorphous silica fine powder, can be used as long as it does not adversely affect the fired product pattern.
上記合成アモルファスシリカ微粉末の具体例としては、日本アエロジル(株)製のAEROSIL(登録商標)50、130、200、200V、200CF、200FAD、300、300CF、380、OX50、TT600、MOX80、MOX170、COK84、日本シリカ工業(株)製のNipsil(登録商標)AQ、AQ-S、VN3、LP、L300、N-300A、ER-R、ER、RS-150、ES、NS、NS-T、NS-P、NS-KR、NS-K、NA、KQ、KM、DS等が挙げられ、これらを単独でまたは2種以上を組み合わせて用いることができる。これらの中でも一次粒子径が5〜50μm、比表面積が50〜500m2/gのものが好ましい。 Specific examples of the synthetic amorphous silica fine powder include AEROSIL (registered trademark) 50, 130, 200, 200V, 200CF, 200FAD, 300, 300CF, 380, OX50, TT600, MOX80, MOX170, manufactured by Nippon Aerosil Co., Ltd. COK84, Nipsil (registered trademark) AQ, AQ-S, VN3, LP, L300, N-300A, ER-R, ER, RS-150, ES, NS, NS-T, NS -P, NS-KR, NS-K, NA, KQ, KM, DS and the like can be mentioned, and these can be used alone or in combination of two or more. Among these, those having a primary particle diameter of 5 to 50 μm and a specific surface area of 50 to 500 m 2 / g are preferable.
次に、前記カルボキシル基含有樹脂(B)は、感光性樹脂であっても、非感光性樹脂であってもよく、これらは単独で又は混合して用いられる。いずれの場合でもこれらは合計で、組成物全量の10〜80質量%の割合で配合することが好ましい。これらの樹脂の配合量が上記範囲よりも少なすぎる場合、形成する皮膜中の上記樹脂の分布が不均一になりやすい。 Next, the carboxyl group-containing resin (B) may be a photosensitive resin or a non-photosensitive resin, and these may be used alone or in combination. In any case, it is preferable to add these at a ratio of 10 to 80% by mass based on the total amount of the composition. When the blending amount of these resins is too smaller than the above range, the distribution of the resin in the film to be formed tends to be uneven.
前記カルボキシル基含有樹脂(B)のうち、非感光性樹脂としては、
(1) 不飽和カルボン酸と不飽和二重結合を有する化合物を共重合させることによって得られるカルボキシル基含有樹脂、
(2) エポキシ基と不飽和二重結合を有する化合物と不飽和二重結合を有する化合物との共重合体のエポキシ基に、1分子中に1つのカルボキシル基を有し、エチレン性不飽和結合を持たない有機酸を反応させ、生成した2級の水酸基に多塩基酸無水物を反応させて得られるカルボキシル基含有樹脂、及び
(3) 水酸基含有ポリマーに多塩基酸無水物を反応させて得られるカルボキシル基含有樹脂
などが挙げられる。
Among the carboxyl group-containing resins (B), as the non-photosensitive resin,
(1) a carboxyl group-containing resin obtained by copolymerizing an unsaturated carboxylic acid and a compound having an unsaturated double bond,
(2) An epoxy group of a copolymer of an epoxy group, a compound having an unsaturated double bond and a compound having an unsaturated double bond has one carboxyl group in one molecule, and has an ethylenically unsaturated bond. Obtained by reacting a polybasic acid anhydride with the resulting secondary hydroxyl group, and (3) reacting the polybasic acid anhydride with a hydroxyl group-containing polymer. And carboxyl group-containing resins.
また、前記カルボキシル基含有感光性樹脂(B)のうち、感光性樹脂としては、
(1) 不飽和カルボン酸と不飽和二重結合を有する化合物の共重合体のカルボキシル基に、エチレン性不飽和基をペンダントとして部分的に付加させることによって得られるカルボキシル基含有感光性樹脂、
(2) エポキシ基と不飽和二重結合を有する化合物と不飽和二重結合を有する化合物の共重合体のエポキシ基に、不飽和カルボン酸を反応させ、生成した2級の水酸基に多塩基酸無水物を反応させて得られるカルボキシル基含有感光性樹脂、
(3) 不飽和二重結合を有する酸無水物と不飽和二重結合を有する化合物の共重合体に、水酸基と不飽和二重結合を有する化合物を反応させて得られるカルボキシル基含有感光性樹脂、
(4) 多官能エポキシ化合物と不飽和モノカルボン酸を反応させ、生成した2級の水酸基に多塩基酸無水物を反応させて得られるカルボキシル基含有感光性樹脂、及び
(5) 水酸基含有ポリマーに多塩基酸無水物を反応させて得られるカルボキシル基含有樹脂に、エポキシ基と不飽和二重結合を有する化合物をさらに反応させて得られるカルボキシル基含有感光性樹脂
などが挙げられる。
Of the carboxyl group-containing photosensitive resin (B), as the photosensitive resin,
(1) A carboxyl group-containing photosensitive resin obtained by partially adding an ethylenically unsaturated group as a pendant to a carboxyl group of a copolymer of a compound having an unsaturated carboxylic acid and an unsaturated double bond,
(2) An epoxy group of a copolymer of a compound having an epoxy group and an unsaturated double bond and a compound having an unsaturated double bond is reacted with an unsaturated carboxylic acid, and the resulting secondary hydroxyl group is converted to a polybasic acid. A carboxyl group-containing photosensitive resin obtained by reacting an anhydride,
(3) A carboxyl group-containing photosensitive resin obtained by reacting a copolymer of an acid anhydride having an unsaturated double bond and a compound having an unsaturated double bond with a compound having a hydroxyl group and an unsaturated double bond ,
(4) a carboxyl group-containing photosensitive resin obtained by reacting a polyfunctional epoxy compound with an unsaturated monocarboxylic acid and reacting the resulting secondary hydroxyl group with a polybasic acid anhydride, and (5) a hydroxyl group-containing polymer. Examples thereof include a carboxyl group-containing photosensitive resin obtained by further reacting a compound having an epoxy group and an unsaturated double bond with a carboxyl group-containing resin obtained by reacting a polybasic acid anhydride.
前記カルボキシル基含有樹脂(B)の重量平均分子量は、1,000〜100,000、好ましくは5,000〜70,000であり、酸価は20〜250mgKOH/g、好ましくは50〜150mgKOH/gである。上記樹脂の分子量が1,000より低い場合、現像時の皮膜の密着性に悪影響を与え、一方100,000よりも高い場合、現像不良を生じやすいので好ましくない。また、酸価が20mgKOH/gより低い場合、アルカリ水溶液に対する溶解性が不充分で現像不良を生じやすく、一方250mgKOH/gより高い場合、現像時に皮膜の密着性の劣化や光硬化部(露光部)の溶解が生じるので好ましくない。さらに、前記カルボキシル基含有樹脂(B)のうち感光性樹脂の場合、その二重結合当量が350〜2,000、好ましくは400〜1,500のものを好適に用いることができる。感光性樹脂の二重結合当量が350よりも小さいと焼成時に残渣が残りやすくなり、2,000よりも大きいと現像時の作業余裕度が狭く、また光硬化時に高露光量を必要とするので好ましくない。 The carboxyl group-containing resin (B) has a weight average molecular weight of 1,000 to 100,000, preferably 5,000 to 70,000, and an acid value of 20 to 250 mgKOH / g, preferably 50 to 150 mgKOH / g. It is. When the molecular weight of the resin is lower than 1,000, the adhesion of the film during development is adversely affected. On the other hand, when the molecular weight is higher than 100,000, poor development is likely to occur, which is not preferable. Further, when the acid value is lower than 20 mgKOH / g, the solubility in an alkaline aqueous solution is insufficient, and development failure tends to occur. ) Is not preferable. Further, in the case of a photosensitive resin among the carboxyl group-containing resins (B), those having a double bond equivalent of 350 to 2,000, preferably 400 to 1,500 can be suitably used. If the double bond equivalent of the photosensitive resin is less than 350, residues are likely to remain during baking. If it is greater than 2,000, the work margin during development is narrow, and a high exposure amount is required during photocuring. It is not preferable.
前記光重合性モノマー(C)は、光硬化性の促進のために用いられるが、具体例としては、2−ヒドロキシエチルアクリレート、2−ヒドロキシプロピルアクリレート、ジエチレングリコールジアクリレート、トリエチレングリコールジアクリレート、ポリエチレングリコールジアクリレート、ポリウレタンジアクリレート、トリメチロールプロパントリアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、トリメチロールプロパンエチレンオキサイド変性トリアクリレート、トリメチロールプロパンプロピレンオキサイド変性トリアクリレート、ジペンタエリスリトールペンタアクリレート、ジペンタエリスリトールヘキサアクリレート及び上記アクリレートに対応する各メタクリレート類;フタル酸、アジピン酸、マレイン酸、イタコン酸、こはく酸、トリメリット酸、テレフタル酸等の多塩基酸とヒドロキシアルキルアクリレート又はヒドロキシアルキルメタクリレートとのモノ、ジー、トリー又はそれ以上のポリエステルなどが挙げられる。但し、特定のものに限定されるものではなく、これらを単独で又は2種以上を組み合わせて用いることができる。前記光重合性モノマー(C)の中でも、1分子中に2個以上のアクリロイル基またはメタクリロイル基を有する多官能モノマーが好ましい。 The photopolymerizable monomer (C) is used for promoting photocurability. Specific examples thereof include 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, and polyethylene. Glycol diacrylate, polyurethane diacrylate, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, trimethylolpropane ethylene oxide modified triacrylate, trimethylolpropane propylene oxide modified triacrylate, dipentaerythritol pentaacrylate, dipenta Erythritol hexaacrylate and methacrylates corresponding to the acrylate; Examples include mono-, di-, tri- or higher polyesters of polybasic acids such as phthalic acid, adipic acid, maleic acid, itaconic acid, succinic acid, trimellitic acid, and terephthalic acid, and hydroxyalkyl acrylate or hydroxyalkyl methacrylate. . However, it is not limited to a specific thing, These can be used individually or in combination of 2 or more types. Among the photopolymerizable monomers (C), polyfunctional monomers having two or more acryloyl groups or methacryloyl groups in one molecule are preferable.
前記光重合性モノマー(C)の配合量は、前記カルボキシル基含有樹脂(B)100質量部当り、20〜100質量部とすることが好ましい。前記光重合性モノマー(C)の配合量が上記範囲よりも少ない場合、組成物の充分な光硬化性が得られがたくなり、逆に上記範囲を超えて多量になると、皮膜の深部に比べて表面部の光硬化が早くなるため、硬化ムラを生じやすくなる。 The blending amount of the photopolymerizable monomer (C) is preferably 20 to 100 parts by mass per 100 parts by mass of the carboxyl group-containing resin (B). When the blending amount of the photopolymerizable monomer (C) is less than the above range, it becomes difficult to obtain sufficient photocurability of the composition. As a result, photocuring of the surface portion is accelerated, and curing unevenness is likely to occur.
前記光重合開始剤(D)の具体例としては、ベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル等のベンゾインとベンゾインアルキルエーテル類;アセトフェノン、2,2−ジメトキシ−フェニルアセトフェノン、2,2−ジエトキシ−2−フェニルアセトフェノン、1,1−ジクロロアセトフェノン等のアセトフォノン類;2−メチル−1−[4−(メチルチオ)フェニル]−2−モルフォリノプロパン−1−オン、2−ベンジル−2ジメチルアミノ−1−(4−モルフォリノフェニル)−ブタノン−1等のアミノアセトフェノン類;2−メチルアントラキノン、2−エチルアントラキノン、2−t−ブチルアントラキノン、1−クロロアントラキノン等のアントラキノン類;2,4−ジメチルチオキサントン、2,4−ジエチルチオキサントン、2−クロロチオキサントン、2,4−ジイソプロピルチオキサントン等のチオキサントン類;アセトフェノンジメチルケタール、ベンジルジメチルケタール等のケタール類;ベンゾフェノン等のベンゾフェノン類;又はキサントン類;(2,6−ジメトキシベンゾイル)−2,4,4−ペンチルホスフィンオキサイド、ビス(2,4,6−トリメチルベンゾイル)−フェニルフォスフィンオキサイド、2,4,6−トリメチルベンゾイルジフェニルフォスフィンオキサイド、エチル−2,4,6−トリメチルベンゾイルフェニルフォスフィネイト等のフォスフィンオキサイド類;各種パーオキサイド類などが挙げられ、これら公知慣用の光重合開始剤を単独で又は2種以上を組み合わせて用いることができる。 Specific examples of the photopolymerization initiator (D) include benzoin and benzoin alkyl ethers such as benzoin, benzoin methyl ether, benzoin ethyl ether, and benzoin isopropyl ether; acetophenone, 2,2-dimethoxy-phenylacetophenone, 2,2 Acetophonones such as diethoxy-2-phenylacetophenone and 1,1-dichloroacetophenone; 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one, 2-benzyl-2 Aminoacetophenones such as dimethylamino-1- (4-morpholinophenyl) -butanone-1; anthraquinones such as 2-methylanthraquinone, 2-ethylanthraquinone, 2-t-butylanthraquinone, 1-chloroanthraquinone; 4-dimethylthioxanthone, 2,4-diethi Thioxanthones such as thioxanthone, 2-chlorothioxanthone, and 2,4-diisopropylthioxanthone; Ketals such as acetophenone dimethyl ketal and benzyldimethyl ketal; Benzophenones such as benzophenone; or Xanthones; (2,6-dimethoxybenzoyl) -2 , 4,4-pentylphosphine oxide, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, ethyl-2,4,6-trimethylbenzoylphenyl Examples include phosphine oxides such as phosphinate; various peroxides. These known and commonly used photopolymerization initiators can be used alone or in combination of two or more.
また、前記光重合開始剤(D)は、N,N−ジメチルアミノ安息香酸エチルエステル、N,N−ジメチルアミノ安息香酸イソアミルエステル、ペンチル−4−ジメチルアミノベンゾエート、トリエチルアミン、トリエタノールアミン等の三級アミン類のような光増感剤の1種あるいは2種以上と組み合わせて用いることができる。 In addition, the photopolymerization initiator (D) includes N, N-dimethylaminobenzoic acid ethyl ester, N, N-dimethylaminobenzoic acid isoamyl ester, pentyl-4-dimethylaminobenzoate, triethylamine, triethanolamine and the like. It can be used in combination with one or more of photosensitizers such as secondary amines.
前記光重合開始剤(D)及び光増感剤の配合割合は、前記カルボキシル基含有樹脂(B)100質量部当り、1〜30質量部とすることが好ましく、より好ましくは5〜20質量部とする。 The blending ratio of the photopolymerization initiator (D) and the photosensitizer is preferably 1 to 30 parts by mass, more preferably 5 to 20 parts by mass per 100 parts by mass of the carboxyl group-containing resin (B). And
本発明では、ゲル化や増粘を防ぐために前記保存安定剤(E)を含有することを特徴とする。前記保存安定剤(E)の具体例としては、グリコール酸、グリコール酸エチルエーテル、グリコール酸フェノキシエチル、ジグリコール酸、フェニルジグリコール酸、メチルジグリコール酸、2−0−ホスホグリコール酸、チオグリコール酸、チオジグリコール酸、ジチオグリコール酸、2−(アセチルチオ)酢酸、S-(チオベンゾイル)チオグリコール酸、S-(4−ピリジルチオ)チオグリコール酸、(2−ピリジルチオ)酢酸、クロロトリルチオグリコール酸、2,5−ジクロロフェニルチオグリコール酸、S-ベンジルチオグリコール酸、トリチオカルボジグリコール酸、S-メチルチオグリコール酸、S−(2−ナフチル)チオグリコール酸、S-ニトロソチオグリコール酸、S-ベンゾイルチオグリコール酸、S-(ベンゾオキサゾール−2−イルチオ)チオグリコール酸、S-(4−メチルフェニルチオ)チオグリコール酸、(3−メトキシフェニルチオ)酢酸などが挙げられ、これらは単独で又は2種以上を組み合わせて用いることができる。 In the present invention, the storage stabilizer (E) is contained in order to prevent gelation and thickening. Specific examples of the storage stabilizer (E) include glycolic acid, glycolic acid ethyl ether, phenoxyethyl glycolate, diglycolic acid, phenyldiglycolic acid, methyldiglycolic acid, 2-0-phosphoglycolic acid, thioglycol Acid, thiodiglycolic acid, dithioglycolic acid, 2- (acetylthio) acetic acid, S- (thiobenzoyl) thioglycolic acid, S- (4-pyridylthio) thioglycolic acid, (2-pyridylthio) acetic acid, chlorotolylthioglycol Acid, 2,5-dichlorophenylthioglycolic acid, S-benzylthioglycolic acid, trithiocarbodiglycolic acid, S-methylthioglycolic acid, S- (2-naphthyl) thioglycolic acid, S-nitrosothioglycolic acid, S -Benzoylthioglycolic acid, S- (benzoxazol-2-ylthio) thioglycolic acid, S -(4-Methylphenylthio) thioglycolic acid, (3-methoxyphenylthio) acetic acid, etc. are mentioned, These can be used individually or in combination of 2 or more types.
前記保存安定剤(E)の配合量は、前記無機微粒子(A)のうちガラス微粒子の100質量部当り、0.1〜10質量部、より好ましくは、0.5〜5.0質量部である。前記保存安定剤(E)の配合量が上記範囲よりも少ない場合、組成物の充分な保存安定性が得られがたくなり、逆に上記範囲を超えて多量になると、パターン形成時の耐膜特性が低下し、パターンの欠損が発生しやすくなる。 The amount of the storage stabilizer (E), the weight per 100 parts by weight of the glass fine particles of the inorganic fine particles (A), 0.1 to 10 parts by weight, more preferably 0.5 to 5.0 parts by weight It is. When the amount of the storage stabilizer (E) is less than the above range, it is difficult to obtain sufficient storage stability of the composition, and conversely, when the amount exceeds the above range, the film resistance at the time of pattern formation The characteristics are deteriorated, and pattern defects are likely to occur.
本発明の感光性樹脂組成物は、必要に応じて、シリコーン系、アクリル系等の消泡・レべリング剤、皮膜の密着性向上のためのシランカップリング剤等の添加剤を配合することができる。また、必要に応じて公知慣用の酸化防止剤や焼成時における基板との結合成分としての金属酸化物、ケイ素酸化物、ホウ素酸化物などの微粒子を添加することができる。 The photosensitive resin composition of the present invention may be blended with additives such as silicone-based and acrylic-based defoaming / leveling agents and silane coupling agents for improving film adhesion, if necessary. Can do. Further, fine particles such as metal oxide, silicon oxide, boron oxide and the like as a binding component with a substrate used at the time of firing can be added as necessary.
本発明の感光性樹脂組成物は、上記に挙げた各種成分を所定の組成となるように調合した後、3本ロールミルや混錬機で混合分散し作製する。 The photosensitive resin composition of the present invention is prepared by mixing and dispersing the above-described various components so as to have a predetermined composition using a three-roll mill or a kneader.
以上説明したような本発明の感光性樹脂組成物は、予めフィルム状に成膜されている場合には基板上にラミネートすればよいが、ペースト状の場合には、スクリーン印刷法、バーコーター、ブレードコーターなど適宜の塗布方法で基板、例えばPDPの前面基板となるガラス基板に塗布し、次いで指触乾燥性を得るために、熱風循環式乾燥炉や遠赤外線乾燥炉等で、例えば60〜120℃で5〜40分程度乾燥させて有機溶剤を蒸発させ、タックフリーの塗膜を得る。その後、選択的露光、現像、焼成を行って所定の焼成物パターンを形成する。 The photosensitive resin composition of the present invention as described above may be laminated on a substrate when it is previously formed into a film, but in the case of a paste, a screen printing method, a bar coater, A substrate such as a blade coater is applied to a substrate, for example, a glass substrate serving as a front substrate of a PDP, and then in order to obtain dryness to touch, in a hot air circulation drying furnace or a far infrared drying furnace, for example, 60 to 120 The organic solvent is evaporated by drying at about 5 to 40 minutes to obtain a tack-free coating film. Thereafter, selective exposure, development and firing are performed to form a predetermined fired product pattern.
ここで選択的露光は、所定の露光パターンを有するネガマスクを用いた接触露光又は非接触露光が可能である。露光光源としては、ハロゲンランプ、高圧水銀灯、レーザー光、メタルハライドランプ、ブラックランプ、無電極ランプなどが使用される。露光量としては50〜1,000mJ/cm2程度が好ましい。 Here, the selective exposure can be contact exposure or non-contact exposure using a negative mask having a predetermined exposure pattern. As the exposure light source, a halogen lamp, a high-pressure mercury lamp, a laser beam, a metal halide lamp, a black lamp, an electrodeless lamp, or the like is used. The exposure amount is preferably about 50 to 1,000 mJ / cm @ 2.
現像は、スプレー法、浸漬法等が用いられる。現像液としては、水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム、炭酸カリウム、珪酸ナトリウムなどの金属アルカリ水溶液やモノエタノールアミン、ジエタノールアミン、トリエタノールアミンなどのアミン水溶液、特に1.5質量%以下の濃度の希アルカリ水溶液が好適に用いられるが、組成物中のカルボキシル基含有樹脂のカルボキシル基がケン化され、未硬化部(未露光部)が除去されればよく、上記のような現像液に限定されるものではない。 For the development, a spray method, a dipping method or the like is used. Developers include aqueous alkali metal solutions such as sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, and sodium silicate, and aqueous amine solutions such as monoethanolamine, diethanolamine, and triethanolamine, particularly a concentration of 1.5% by mass or less. The dilute alkaline aqueous solution is preferably used, but the carboxyl group of the carboxyl group-containing resin in the composition may be saponified and the uncured part (unexposed part) may be removed, and is limited to the developer as described above. Is not to be done.
焼成は、空気中又は窒素雰囲気下、400〜600℃の条件で行うことにより、所望の焼成物パターンを形成することができる。なお、このときの昇温速度は、20℃/分以下に設定することが好ましい。 Firing can be carried out under conditions of 400 to 600 ° C. in air or in a nitrogen atmosphere to form a desired fired product pattern. In addition, it is preferable to set the temperature increase rate at this time to 20 degrees C / min or less.
また、所望の焼成物パターンの種類に応じて、前記無機微粒子(A)成分を適宜選定することができる。例えば、電極パターンの形成の場合には、導電性粉末が用いられるが、焼成性を向上させるために適量のガラス微粒子を併用することが好ましい。特に、黒色電極パターンを形成する場合には、さらに黒色顔料も用いられる。ブラックマトリックスパターンの場合には、ガラス微粒子と黒色顔料が用いられ、隔壁パターンの形成にはガラス微粒子が用いられる。 Moreover, the said inorganic fine particle (A) component can be suitably selected according to the kind of desired baked material pattern. For example, in the case of forming an electrode pattern, a conductive powder is used, but it is preferable to use an appropriate amount of glass fine particles in combination in order to improve the firing property. In particular, when forming a black electrode pattern, a black pigment is also used. In the case of a black matrix pattern, glass fine particles and a black pigment are used, and glass fine particles are used for forming the partition pattern.
以下に実施例及び比較例を示して本発明について具体的に説明する。但し、本発明は下記実施例に限定されるものではない。なお、「部」及び「%」とあるのは、特に断りがない限り全て質量基準である。 Hereinafter, the present invention will be described in detail with reference to Examples and Comparative Examples. However, the present invention is not limited to the following examples. “Parts” and “%” are based on mass unless otherwise specified.
[PDP表示パネルの電極配線用ペースト]
(有機バインダーAの合成例)
温度計、攪拌機、滴下ロート、及び還流冷却器を備えたフラスコに、溶媒としてジエチレングリコールモノエチルエーテルアセテート、触媒としてアゾビスイソブチロニトリルを入れ、窒素雰囲気下、80℃に加熱し、メタクリル酸及びメチルメタアクリレートをメタクリル酸:0.4mol、メチルメタアクリレート:0.6molのモル比で混合したモノマーを2時間かけて滴下し、さらに1時間攪拌後、温度を115℃まで上げて失活させ、樹脂溶液を得た。
[PDP display panel electrode wiring paste]
(Synthesis example of organic binder A)
In a flask equipped with a thermometer, stirrer, dropping funnel, and reflux condenser, diethylene glycol monoethyl ether acetate as a solvent and azobisisobutyronitrile as a catalyst were heated to 80 ° C. in a nitrogen atmosphere, and methacrylic acid and A monomer in which methyl methacrylate is mixed at a molar ratio of methacrylic acid: 0.4 mol and methyl methacrylate: 0.6 mol is added dropwise over 2 hours, and after stirring for another hour, the temperature is raised to 115 ° C. to deactivate the monomer, A resin solution was obtained.
次にこの樹脂溶液を冷却後、触媒として臭化テトラブチルアンモニウムを用い、95℃〜105℃、30時間の条件で、ブチルグリシジルエーテル:0.4molを、得られた樹脂のカルボキシル基の等量と付加反応させ、冷却した。 Next, after cooling this resin solution, tetrabutylammonium bromide was used as a catalyst, 95 ° C. to 105 ° C., 30 hours, butyl glycidyl ether: 0.4 mol, equivalent amount of carboxyl group of the obtained resin And the reaction was cooled.
さらに得られた樹脂のOH基に対して、95〜105℃、8時間の条件で、無水テトラヒドロフタル酸0.26molを付加反応させ、冷却後取り出して固形分55%の有機バインダー(以下、有機バインダーAとする)を得た。 Further, 0.26 mol of tetrahydrophthalic anhydride was added to the OH group of the obtained resin under conditions of 95 to 105 ° C. for 8 hours, cooled and taken out, and then an organic binder having a solid content of 55% (hereinafter referred to as organic). Binder A) was obtained.
上記のようにして得られた有機バインダーAを用い表1に示す組成比にて配合し、攪拌機により攪拌後、3本ロールミルにより練肉して感光性樹脂組成物を得た。
なお、ガラスフリットとしては、Bi2O3 49%、B2O3 14%、ZnO 14%、SiO2 6%、BaO 17%のガラスを粉砕し、ガラス転移点:457℃、平均粒子径:1.6μmとしたものを使用した。ガラスフリットの粒径は、レーザー回析散乱式粒度分布測定装置:LMS−30((株)セイシン企業製)で測定した。さらに銀粉として平均粒径(レーザー回析散乱式粒度分布測定装置により測定):2.2μm、比表面積(BET1点法により測定):0.50m2/g、タップ密度(タップ密度計により測定):4.4のものを使用した。
The organic binder A obtained as described above was blended at the composition ratio shown in Table 1, stirred with a stirrer, and then kneaded with a three-roll mill to obtain a photosensitive resin composition.
As the glass frit, glass of Bi2O3 49%, B2O3 14%, ZnO 14%, SiO2 6%, BaO 17% was crushed to have a glass transition point of 457 ° C. and an average particle size of 1.6 μm. used. The particle size of the glass frit was measured with a laser diffraction / scattering particle size distribution analyzer: LMS-30 (manufactured by Seishin Enterprise Co., Ltd.). Further, the average particle size as silver powder (measured by a laser diffraction / scattering particle size distribution analyzer): 2.2 μm, specific surface area (measured by the BET single point method): 0.50 m 2 / g, tap density (measured by a tap density meter): 4.4 was used.
下記表1に示す成分を配合し、攪拌機により攪拌後、3本ロールミルにより錬肉して感光性樹脂組成物を得た。
得られた感光性樹脂組成物(ペースト)について、現像性や保存安定性などについて評価した。これらの評価結果を表2に示す。なお、評価方法は以下のとおりである。
(評価基板)ITO膜つきガラス基板上に、実施例及び比較例の評価用ペーストを200メッシュのポリエステルスクリーンを用いて全面に塗布した。次いで、熱風循環式乾燥炉にて90℃で20分間、基板を乾燥させて、指触乾燥性の良好な皮膜を形成した。その後、光源を超高圧水銀灯(ウシオ製作所製、ショートアークランプ5KW)を用い、ライン幅10〜100μm、スペース幅100μmのストライプ状のネガマスクを用いて、組成物上の積算光量が300mJ/cm2となるように露光した。また、コダックNo.2のステップタブレットを使用し、同様に露光した。露光後、液温30℃の0.4wt%Na2CO3の水溶液を用いた現像を30秒または60秒行い、水洗した。
About the obtained photosensitive resin composition (paste), developability, storage stability, etc. were evaluated. These evaluation results are shown in Table 2. The evaluation method is as follows.
(Evaluation Substrate) The evaluation pastes of Examples and Comparative Examples were applied on the entire surface of a glass substrate with an ITO film using a 200 mesh polyester screen. Next, the substrate was dried at 90 ° C. for 20 minutes in a hot air circulation drying oven to form a film having good touch drying properties. Then, using an ultra-high pressure mercury lamp (made by Ushio Corporation, short arc lamp 5KW) as the light source, using a striped negative mask having a line width of 10 to 100 μm and a space width of 100 μm, the integrated light quantity on the composition becomes 300 mJ / cm 2. Were exposed as follows. Further, a Kodak No. 2 step tablet was used and exposed in the same manner. After the exposure, development using an aqueous solution of 0.4 wt% Na2CO3 at a liquid temperature of 30 ° C. was performed for 30 seconds or 60 seconds and washed with water.
○乾燥後塗膜厚(μm):乾燥後、塗膜の厚さを小坂研究所製表面粗さ計により測定した。
○感度:コダックNo.2のステップタブレット使用し、現像後に残る段数で評価した。
○現像後膜厚(μm):マスク幅100μmラインの高さを小坂研究所製表面粗さ計により測定した。
○現像後線幅(μm):マスク幅100μmラインの幅を光学顕微鏡を用いて測定した。なお、NGとは、線幅が残っていないため測定不能であることを意味する。
○アンダーカット(μm):現像後、裏面よりマスク幅100μmラインの片側のアンダーカット幅を光学顕微鏡により測定した。なお、NGとは、現像後に線が残っていないため測定不能であることを意味する。
○完全残存パターン(μm):ライン幅L/スペース幅S=40/80、60/80、80/80、100/300、200/300、300/300の長さ2cm、8本ずつのラインが平行して並んでいる密集ラインパターン中で現像後に形成できる最小ライン幅(μm)を完全残存パターンとして評価した。なお、NGとは、線が残っていないため測定不能であることを意味する。
O Coating thickness after drying (μm): After drying, the coating thickness was measured with a surface roughness meter manufactured by Kosaka Laboratory.
○ Sensitivity: Kodak No. 2 step tablets were used, and the number of stages remaining after development was evaluated.
○ Film thickness after development (μm): The height of the mask width 100 μm line was measured with a surface roughness meter manufactured by Kosaka Laboratory.
○ Line width after development (μm): Mask width 100 μm Line width was measured using an optical microscope. Note that NG means that measurement is impossible because no line width remains.
Undercut (μm): After development, the undercut width on one side of the mask width 100 μm line from the back surface was measured with an optical microscope. Note that NG means that measurement is impossible because no line remains after development.
○ Complete residual pattern (μm): line width L / space width S = 40/80, 60/80, 80/80, 100/300, 200/300, 300/300 length 2 cm, 8 lines each The minimum line width (μm) that can be formed after development in the dense line patterns arranged in parallel was evaluated as a complete residual pattern. In addition, NG means that measurement is impossible because no line remains.
(保存安定性)
○25℃一ヶ月後印刷性:実施例及び比較例の組成物を25℃下で一ヶ月保存し、ムラができないかといった面で印刷性に問題がないかを調べ、保存安定性を評価した。
(Storage stability)
○ Printability after one month at 25 ° C .: The compositions of Examples and Comparative Examples were stored at 25 ° C. for one month, and examined whether there was any problem with printability in terms of unevenness, and storage stability was evaluated. .
表2に示す結果から明らかなように、現像後の膜厚については、現像時間が30秒の場合は実施例も比較例もほぼ同程度の膜厚が得られるのに対して、現像時間が60秒の場合は、実施例においては11.0乃至11.3μmであるのに対して、比較例2〜5においてはNG、すなわち、現像後に線が残っていないため測定不能であるという結果が得られた。 As is clear from the results shown in Table 2, with respect to the film thickness after development, when the development time is 30 seconds, the film thickness is almost the same in both the example and the comparative example, whereas the development time In the case of 60 seconds, it is 11.0 to 11.3 μm in the examples, while in Comparative Examples 2 to 5, it is NG, that is, the measurement cannot be performed because no line remains after development. Obtained.
現像後の線幅については、同様に、現像時間が30秒の場合は実施例も比較例もほぼ同程度の線幅が得られるのに対して、現像時間が60秒の場合は、実施例においては114乃至117μmであるのに対して、比較例2〜5においてはNGという結果が得られた。 As for the line width after development, similarly, when the development time is 30 seconds, the line width of almost the same degree is obtained in both the example and the comparative example, whereas in the case where the development time is 60 seconds, the example In Comparative Examples 2 to 5, a result of NG was obtained.
アンダーカットについては、現像時間が30秒の場合は実施例1、2においてはそれぞれ9μmであるのに対して、比較例2〜5においてはそれぞれ10.5、11、14.5、9μmであり、比較例5を除いて本発明の実施例の場合の方がアンダーカットは小さい。そして現像時間が60秒の場合は、実施例においては14乃至16μmであるのに対して、比較例2〜5においてはNGという結果が得られた。 Regarding the undercut, when the development time is 30 seconds, each of Examples 1 and 2 is 9 μm, while in Comparative Examples 2 to 5, they are 10.5, 11, 14.5, and 9 μm, respectively. Except for the comparative example 5, the undercut is smaller in the case of the example of the present invention. When the developing time was 60 seconds, the results were 14 to 16 μm in the examples, whereas NG was obtained in Comparative Examples 2 to 5.
完全残存パターンについては、現像時間が30秒の場合は実施例1、2においてはそれぞれ40μmの細線パターンが形成されたのに対して、比較例3、5は同じく40μmであつたが、比較例2は60μm、比較例4は100μmであった。また、現像時間が60秒の場合は、実施例においては80乃至100μmであるのに対して、比較例2、3においてはそれぞれ200、300という太い線のパターンしか形成されず、比較例4、5においてはNG、すなわち、もっとも太い配線パターン300/300も含めてすべての配線パターンが消失するという結果が得られた。 Regarding the completely remaining pattern, when the development time was 30 seconds, a thin line pattern of 40 μm was formed in each of Examples 1 and 2, whereas in Comparative Examples 3 and 5, the same was 40 μm. 2 was 60 μm, and Comparative Example 4 was 100 μm. Further, when the development time is 60 seconds, in the example, it is 80 to 100 μm, whereas in Comparative Examples 2 and 3, only thick line patterns of 200 and 300 are formed, respectively. 5, the result was that NG, that is, all the wiring patterns including the thickest wiring pattern 300/300 disappeared.
なお、比較例1については、保存安定性以外の上記の各評価項目においては、本発明の実施例と同等またはよりすぐれているが、保存安定性の点で、問題があり、実用には供し得ない。すなわち、保存安定性については、25℃の状況下で1ヶ月保管した実施例及び比較例の感光性樹脂組成物についての印刷性を調べたが、比較例1及び2は問題があったのに対し、実施例は感光性樹脂組成物作製時の解像度を落とすことなく、良好であった。 In Comparative Example 1, each of the evaluation items other than the storage stability is equal to or better than the examples of the present invention, but there is a problem in terms of storage stability, and it is practically used. I don't get it. That is, regarding the storage stability, the printability of the photosensitive resin compositions of Examples and Comparative Examples which were stored for 1 month under the condition of 25 ° C. was examined, but Comparative Examples 1 and 2 had problems. On the other hand, the examples were good without degrading the resolution at the time of preparing the photosensitive resin composition.
以上の結果を総合すると、本発明の実施例1、2の感光性樹脂組成物は、十分な保存安定性を有するとともに、高精細な現像パターンが形成できることが分かる。 When the above results are put together, it can be seen that the photosensitive resin compositions of Examples 1 and 2 of the present invention have sufficient storage stability and can form a high-definition development pattern.
以上のように、本発明に係る感光性樹脂組成物は、高精細な現像パターンとそれに基づく高精細な焼成物パターンを作成することができ、保存安定性にも優れている。 As described above, the photosensitive resin composition according to the present invention can create a high-definition development pattern and a high-definition fired product pattern based thereon, and is excellent in storage stability.
[ブラックマトリックスパターン形成用ペースト]
(有機バインダーBの合成例)
温度計、攪拌機、滴下ロート、及び還流冷却機を備えたフラスコに、メチルメタクリレートとメタクリル酸を0.87:0.13のモル比で仕込み、溶媒としてジエチレングリコールモノメチルエーテルアセテート、触媒としてアゾビスイソブチロニトリルを入れ窒素雰囲気下、80℃で2〜6時間攪拌し、有機バインダーBを得た。
この有機バインダーBは、重量平均分子量が約40,000、酸価が103mgKOH/g、固形分29%であった。なお、得られた有機バインダーB(共重合樹脂)の重量平均分子量の測定は、島津製作所製ポンプLC−6ADと昭和電工製カラムShodex(登録商標)KF−804、KF−803、KF−802を三本つないだ高速液体クロマトグラフィーにより測定した。
[Black matrix pattern forming paste]
(Synthesis example of organic binder B)
A flask equipped with a thermometer, stirrer, dropping funnel, and reflux condenser is charged with methyl methacrylate and methacrylic acid in a molar ratio of 0.87: 0.13, diethylene glycol monomethyl ether acetate as a solvent, and azobisisobutyrate as a catalyst. Ronitrile was added and stirred at 80 ° C. for 2 to 6 hours under a nitrogen atmosphere to obtain an organic binder B.
This organic binder B had a weight average molecular weight of about 40,000, an acid value of 103 mgKOH / g, and a solid content of 29%. In addition, the measurement of the weight average molecular weight of the obtained organic binder B (copolymerization resin) measured Shimadzu pump LC-6AD and Showa Denko column Shodex (registered trademark) KF-804, KF-803, KF-802. The measurement was performed by high performance liquid chromatography connected to a triplet.
このようにして得られた有機バインダーBを用い表3に示す組成比にて配合し、攪拌機により攪拌後、3本ロールミルにより練肉して感光性樹脂組成物を得た。
なお、ガラスフリットとしては、Bi2O3:49%、B2O3:14%、ZnO:14%、SiO2:6%、BaO:17%のガラスを粉砕し、ガラス転移点:457℃、平均粒子径:1.6μmとしたものを使用した。なお、ガラスフリットの粒径は、レーザー回析散乱式粒度分布測定装置:LMS−30((株)セイシン企業製)で測定した。四酸化三コバルト粉末としては、平均粒径(レーザー回析散乱式粒度分布測定装置により測定):0.45μm、比表面積(BET1点法により測定):6.0m2/gのものを使用した。
The organic binder B thus obtained was blended at the composition ratio shown in Table 3, stirred with a stirrer, and then kneaded with a three-roll mill to obtain a photosensitive resin composition.
As the glass frit, glass of Bi2O3: 49%, B2O3: 14%, ZnO: 14%, SiO2: 6%, BaO: 17% was crushed, glass transition point: 457 ° C, average particle diameter: 1. What was 6 micrometers was used. The particle size of the glass frit was measured with a laser diffraction / scattering particle size distribution analyzer: LMS-30 (manufactured by Seishin Enterprise Co., Ltd.). The tricobalt tetroxide powder used had an average particle size (measured by a laser diffraction / scattering particle size distribution analyzer): 0.45 μm and a specific surface area (measured by the BET single point method): 6.0 m 2 / g.
得られた感光性樹脂組成物(ペースト)について、保存安定性や現像性、パターン形成性などについて評価した。これらの評価結果を表4に示す。なお、評価方法は以下のとおりである。
(評価基板)ガラス基板上に、実施例及び比較例の評価用ペーストを300メッシュのポリエステルスクリーンを用いて全面に塗布した。次いで、IR式乾燥炉にて100℃で15分間、基板を乾燥させて、指触乾燥性の良好な皮膜を形成した。その後、光源を超高圧水銀灯(ウシオ製作所製、ショートアークランプ5KW)を用い、ライン幅10〜100μm、スペース幅100μmのストライプ状のネガマスクを用いて、組成物上の積算光量が600mJ/cm2となるように露光した。また、コダックNo.2のステップタブレットを使用し、同様に露光した。露光後、液温30℃の0.4wt%Na2CO3の水溶液を用いた現像を20秒、40秒、60秒行い、水洗し、乾燥し、それぞれを評価基板とした。
About the obtained photosensitive resin composition (paste), storage stability, developability, pattern formability, etc. were evaluated. These evaluation results are shown in Table 4. The evaluation method is as follows.
(Evaluation Substrate) The evaluation pastes of Examples and Comparative Examples were applied on the entire surface of a glass substrate using a 300 mesh polyester screen. Next, the substrate was dried at 100 ° C. for 15 minutes in an IR drying oven to form a film having good touch-drying properties. Then, using a super high pressure mercury lamp (USHIO, short arc lamp 5KW) as a light source, using a striped negative mask having a line width of 10 to 100 μm and a space width of 100 μm, the integrated light amount on the composition becomes 600 mJ / cm 2. Were exposed as follows. Further, a Kodak No. 2 step tablet was used and exposed in the same manner. After the exposure, development using an aqueous solution of 0.4 wt% Na 2 CO 3 at a liquid temperature of 30 ° C. was performed for 20 seconds, 40 seconds, and 60 seconds, washed with water, and dried, and each was used as an evaluation substrate.
(保存安定性)
得られた各感光性樹脂組成物の粘度をトキメック社製、TV型粘度計にて測定し、その後25℃下で、18日間保管後、再び同粘度計にて粘度を測定し、この2点の粘度測定値より、経時保存による粘土の増粘率を算出し、保存安定性の評価を行った。
(Storage stability)
The viscosity of each photosensitive resin composition obtained was measured with a TV-type viscometer manufactured by Tokimec Co., Ltd., then stored at 25 ° C. for 18 days, and then the viscosity was measured again with the same viscometer. From the measured viscosity value, the viscosity increase rate of the clay by storage over time was calculated, and the storage stability was evaluated.
(パターン形成性)
ライン幅L/スペース幅=40/80、60/80、80/80、100/300、200/300、300/300の長さ2cm、8本ずつのラインが平行して並んでいる各密集ラインパターンを光学顕微鏡にて観察し、パターンの形状(ラインのよれつき等)や基板との密着性(浮き上がり、飛び等)を評価した。
(Pattern formability)
Line width L / space width = 40/80, 60/80, 80/80, 100/300, 200/300, 300/300 length 2 cm, each dense line in which 8 lines are arranged in parallel The pattern was observed with an optical microscope, and the shape of the pattern (such as wobbling of the line) and the adhesion with the substrate (such as lifting and flying) were evaluated.
○感度:コダックNo.2のステップタブレット使用し、現像後に残る段数で評価した。
○現像後膜厚(μm):マスク幅100μmラインの高さを小坂研究所製表面粗さ計により測定した。
○現像後線幅(μm):マスク幅100μmラインの幅を光学顕微鏡を用いて測定した。
○完全残存パターン(μm):ライン幅L/スペース幅S=40/80、60/80、80/80、100/300、200/300、300/300の長さ2cm、8本ずつのラインが平行して並んでいる密集ラインパターン中で現像後に形成できる最小ライン幅(μm)を完全残存パターンとして評価した。
○ Sensitivity: Kodak No. 2 step tablets were used, and the number of stages remaining after development was evaluated.
○ Film thickness after development (μm): The height of the mask width 100 μm line was measured with a surface roughness meter manufactured by Kosaka Laboratory.
○ Line width after development (μm): Mask width 100 μm Line width was measured using an optical microscope.
○ Complete residual pattern (μm): line width L / space width S = 40/80, 60/80, 80/80, 100/300, 200/300, 300/300 length 2 cm, 8 lines each The minimum line width (μm) that can be formed after development in the dense line patterns arranged in parallel was evaluated as a complete residual pattern.
表4に示す結果から明らかなように、感光性樹脂組成物の保存安定性については、実施例3、4及び比較例8の感光性樹脂組成物は、粘度変化がほとんどなく、増粘が抑えられているのに対し、比較例6、7の感光性樹脂組成物は粘度変化が大きく、増粘するという結果が得られた。 As is clear from the results shown in Table 4, regarding the storage stability of the photosensitive resin composition, the photosensitive resin compositions of Examples 3 and 4 and Comparative Example 8 have almost no change in viscosity and suppress increase in viscosity. In contrast, the photosensitive resin compositions of Comparative Examples 6 and 7 had a large viscosity change, and the result was that the viscosity increased.
また、パターン形生性については、実施例3、4及び比較例6、7では現像時間20秒、40秒、60秒のいずれにおいても良好なパターンが得られたのに対して、比較例8では、現像時間20秒では良好なパターンが得られたものの、40秒では形成パターン端部の基板から浮き上がりがみられ、60秒では形成パターンの不規則な飛びがみられた。 In addition, with respect to pattern formability, in Examples 3 and 4 and Comparative Examples 6 and 7, a good pattern was obtained at any of development times of 20 seconds, 40 seconds, and 60 seconds, whereas in Comparative Example 8, Although a good pattern was obtained at the development time of 20 seconds, the formation pattern was lifted from the substrate at 40 seconds, and irregular jumps of the formation pattern were observed at 60 seconds.
さらに、完全残存パターンについては、実施例3、4及び比較例6、7では現像時間20秒、40秒のいずれにおいても、10μmの細線パターンが形成されたのに対して、比較例8では現像時間20秒で20μm、40秒で30μmであった。また、現像時間が60秒の場合は、実施例3、4及び比較例6、7では20μmの細線パターンが形成されたのに対して、比較例8では30μmである結果が得られた。 Further, with respect to the completely remaining pattern, in Examples 3 and 4, and Comparative Examples 6 and 7, a 10 μm fine line pattern was formed at both development times of 20 seconds and 40 seconds, whereas in Comparative Example 8, development was performed. The time was 20 μm at 20 seconds and 30 μm at 40 seconds. When the development time was 60 seconds, a thin line pattern of 20 μm was formed in Examples 3 and 4 and Comparative Examples 6 and 7, whereas a result of 30 μm was obtained in Comparative Example 8.
このように、比較例6、7については、パターン形成性や完全残存パターンなどのパターニング性に関し、実施例とほぼ同等であったが、保存安定性の点で問題があり、実用には供し得ない。一方、比較例8については、保存安定性に関し、実施例とほぼ同等であったが、パターン形成性や完全残存パターンなどのパターニング性の点で問題があるという結果が得られた。 As described above, Comparative Examples 6 and 7 were almost the same as the Examples with respect to patterning properties such as pattern formability and completely remaining pattern, but there was a problem in terms of storage stability, and they could be put to practical use. Absent. On the other hand, Comparative Example 8 was almost the same as the Example with respect to storage stability, but a result was obtained that there was a problem in patterning properties such as pattern forming property and complete residual pattern.
以上の結果を総合すると、実施例3、4の感光性樹脂組成物は、十分な保存安定性を有するとともに、高精細な現像パターンが形成できることが分かる。 When the above results are put together, it can be seen that the photosensitive resin compositions of Examples 3 and 4 have sufficient storage stability and can form a high-definition development pattern.
以上のように、本発明に係る感光性樹脂組成物は、高精細な現像パターンとそれに基く高精細な焼成物パターンを作成することができ、保存安定性にも優れている。 As described above, the photosensitive resin composition according to the present invention can create a high-definition development pattern and a high-definition fired product pattern based thereon, and is excellent in storage stability.
本発明は上記の実施形態あるいは実施例に限定されるものではなく、種々の変形が可能である。例えば、上記の実施形態においては、本発明をPDP表示パネル用の電極配線とブラックマトリックスパターン形成に適用したが、これらに限られるものではなく、このような感光性ペーストを用いて隔壁や誘電体などの焼成物パターンを形成することも可能である。 The present invention is not limited to the above embodiments or examples, and various modifications are possible. For example, in the above-described embodiment, the present invention is applied to the electrode wiring for the PDP display panel and the black matrix pattern formation. However, the present invention is not limited to this, and the barrier ribs and the dielectric are formed using such a photosensitive paste. It is also possible to form a fired product pattern such as.
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- 2007-12-19 JP JP2007327465A patent/JP5178178B2/en not_active Expired - Fee Related
- 2007-12-21 KR KR1020070134814A patent/KR100932839B1/en active IP Right Grant
- 2007-12-21 CN CN200710160617XA patent/CN101206397B/en not_active Expired - Fee Related
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JP2008176312A (en) | 2008-07-31 |
CN101206397A (en) | 2008-06-25 |
CN101206397B (en) | 2012-09-19 |
KR20080059067A (en) | 2008-06-26 |
KR100932839B1 (en) | 2009-12-21 |
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