JP5177962B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5177962B2
JP5177962B2 JP2006139863A JP2006139863A JP5177962B2 JP 5177962 B2 JP5177962 B2 JP 5177962B2 JP 2006139863 A JP2006139863 A JP 2006139863A JP 2006139863 A JP2006139863 A JP 2006139863A JP 5177962 B2 JP5177962 B2 JP 5177962B2
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Japan
Prior art keywords
region
conductive layer
film
layer
tft
Prior art date
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Expired - Fee Related
Application number
JP2006139863A
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English (en)
Japanese (ja)
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JP2007005775A (ja
JP2007005775A5 (enExample
Inventor
英人 大沼
雅晴 永井
光明 納
真之 坂倉
茂樹 小森
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006139863A priority Critical patent/JP5177962B2/ja
Publication of JP2007005775A publication Critical patent/JP2007005775A/ja
Publication of JP2007005775A5 publication Critical patent/JP2007005775A5/ja
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Publication of JP5177962B2 publication Critical patent/JP5177962B2/ja
Expired - Fee Related legal-status Critical Current
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2006139863A 2005-05-20 2006-05-19 半導体装置 Expired - Fee Related JP5177962B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006139863A JP5177962B2 (ja) 2005-05-20 2006-05-19 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005148836 2005-05-20
JP2005148836 2005-05-20
JP2005150271 2005-05-23
JP2005150271 2005-05-23
JP2006139863A JP5177962B2 (ja) 2005-05-20 2006-05-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2007005775A JP2007005775A (ja) 2007-01-11
JP2007005775A5 JP2007005775A5 (enExample) 2009-04-30
JP5177962B2 true JP5177962B2 (ja) 2013-04-10

Family

ID=37691028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006139863A Expired - Fee Related JP5177962B2 (ja) 2005-05-20 2006-05-19 半導体装置

Country Status (1)

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JP (1) JP5177962B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5459899B2 (ja) * 2007-06-01 2014-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2284891B1 (en) * 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
TWI741298B (zh) 2013-10-10 2021-10-01 日商半導體能源研究所股份有限公司 半導體裝置
JP2024046050A (ja) * 2022-09-22 2024-04-03 株式会社東芝 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349297A (ja) * 1999-03-10 2000-12-15 Matsushita Electric Ind Co Ltd 薄膜トランジスタ、パネル及びそれらの製造方法
GB2358079B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor
JP4776792B2 (ja) * 2000-02-28 2011-09-21 株式会社半導体エネルギー研究所 発光装置および電気器具
JP2002134756A (ja) * 2000-10-26 2002-05-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP4801262B2 (ja) * 2001-01-30 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2007005775A (ja) 2007-01-11

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