JP5173850B2 - 検査装置 - Google Patents

検査装置 Download PDF

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Publication number
JP5173850B2
JP5173850B2 JP2009000465A JP2009000465A JP5173850B2 JP 5173850 B2 JP5173850 B2 JP 5173850B2 JP 2009000465 A JP2009000465 A JP 2009000465A JP 2009000465 A JP2009000465 A JP 2009000465A JP 5173850 B2 JP5173850 B2 JP 5173850B2
Authority
JP
Japan
Prior art keywords
electromagnetic wave
amplitude
thickness
time
thz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009000465A
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English (en)
Japanese (ja)
Other versions
JP2010156664A5 (enExample
JP2010156664A (ja
Inventor
敏彦 尾内
信太郎 笠井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009000465A priority Critical patent/JP5173850B2/ja
Priority to CN200980153214XA priority patent/CN102272578B/zh
Priority to PCT/JP2009/071366 priority patent/WO2010076874A1/en
Priority to US13/142,554 priority patent/US8440971B2/en
Publication of JP2010156664A publication Critical patent/JP2010156664A/ja
Publication of JP2010156664A5 publication Critical patent/JP2010156664A5/ja
Application granted granted Critical
Publication of JP5173850B2 publication Critical patent/JP5173850B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/103—Scanning by mechanical motion of stage

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Toxicology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
JP2009000465A 2009-01-05 2009-01-05 検査装置 Expired - Fee Related JP5173850B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009000465A JP5173850B2 (ja) 2009-01-05 2009-01-05 検査装置
CN200980153214XA CN102272578B (zh) 2009-01-05 2009-12-16 太赫兹检查装置
PCT/JP2009/071366 WO2010076874A1 (en) 2009-01-05 2009-12-16 Terahertz examining apparatus
US13/142,554 US8440971B2 (en) 2009-01-05 2009-12-16 Examining apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009000465A JP5173850B2 (ja) 2009-01-05 2009-01-05 検査装置

Publications (3)

Publication Number Publication Date
JP2010156664A JP2010156664A (ja) 2010-07-15
JP2010156664A5 JP2010156664A5 (enExample) 2012-02-23
JP5173850B2 true JP5173850B2 (ja) 2013-04-03

Family

ID=42045380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009000465A Expired - Fee Related JP5173850B2 (ja) 2009-01-05 2009-01-05 検査装置

Country Status (4)

Country Link
US (1) US8440971B2 (enExample)
JP (1) JP5173850B2 (enExample)
CN (1) CN102272578B (enExample)
WO (1) WO2010076874A1 (enExample)

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* Cited by examiner, † Cited by third party
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US7733100B2 (en) * 2005-08-26 2010-06-08 Dcg Systems, Inc. System and method for modulation mapping
JP5462779B2 (ja) * 2010-12-27 2014-04-02 大日本スクリーン製造株式会社 基板検査装置及び基板検査方法
JP5580251B2 (ja) * 2011-06-13 2014-08-27 株式会社日立ハイテクマニファクチャ＆サービス ウェーハ接合強度検査装置及び方法
JP5972536B2 (ja) * 2011-07-26 2016-08-17 株式会社Ｓｃｒｅｅｎホールディングス 基板検査装置および基板検査方法
US9140542B2 (en) * 2012-02-08 2015-09-22 Honeywell Asca Inc. Caliper coating measurement on continuous non-uniform web using THz sensor
JP2013174548A (ja) * 2012-02-27 2013-09-05 Otsuka Denshi Co Ltd 測定装置および測定方法
CN102621070B (zh) * 2012-04-13 2013-09-18 吴周令 一种二维太赫兹成像系统及其成像方法
KR101374321B1 (ko) * 2012-08-29 2014-03-17 한국전자통신연구원 비접촉 두께 측정 장치 및 그것의 두께 측정 방법
US9228826B2 (en) 2012-08-29 2016-01-05 Electronics And Telecommunications Research Institute Apparatus and method for contactless thickness measurement
JP2014122875A (ja) 2012-11-26 2014-07-03 Canon Inc 層状物体の測定装置および方法
CN103105368A (zh) * 2013-01-25 2013-05-15 大连理工大学 一种分析聚变装置第一镜杂质沉积层厚度及其结构的方法
CN103115893A (zh) * 2013-01-30 2013-05-22 大连理工大学 一种检测托卡马克钨第一壁灰尘沉积层成分及厚度的装置
WO2015051806A1 (en) * 2013-10-11 2015-04-16 Danmarks Tekniske Universitet Method for characterisation of electrical properties
FR3013128B1 (fr) * 2013-11-13 2016-01-01 Univ Aix Marseille Dispositif et methode de mise au point tridimensionnelle pour microscope
CN105628642A (zh) * 2016-01-08 2016-06-01 上海理工大学 一种提高太赫兹光学检测系统频谱信噪比的方法
DE102016119728A1 (de) * 2016-10-17 2018-04-19 Inoex Gmbh Lnnovationen Und Ausrüstungen Für Die Extrusionstechnik Terahertz-Messgerät
US11099001B2 (en) * 2016-12-06 2021-08-24 Pioneer Corporation Inspection apparatus, inspection method, computer program and recording medium
KR102350650B1 (ko) * 2017-03-30 2022-01-12 한양대학교 산학협력단 두께 측정 장치, 두께 측정 방법 및 두께 측정 프로그램
US11226286B2 (en) 2017-05-16 2022-01-18 Pioneer Corporation Inspection apparatus, inspection method, library generation apparatus, library generation method, computer program and recording medium
CN107703562B (zh) * 2017-09-26 2019-03-19 北京无线电计量测试研究所 一种用于高带宽平衡光电探测器共模抑制比校准的装置与方法
EP3769034A4 (en) 2018-03-22 2021-12-01 3M Innovative Properties Company TIME RANGE TERAHERTZ MEASURING SYSTEM WITH A SINGLE REFERENCE AREA
DE102018124175A1 (de) * 2018-10-01 2020-04-02 Sikora Ag Verfahren und Vorrichtung zum Steuern einer Produktionsanlage für plattenförmige oder strangförmige Körper
EP3742191A1 (en) * 2019-05-24 2020-11-25 Helmut Fischer GmbH Terahertz measuring device and method of operating a terahertz measuring device
DE102022105479B3 (de) * 2022-03-09 2023-08-03 Sikora Aktiengesellschaft Vorrichtung und Verfahren zum Bestimmen von Dimensionsdaten eines Objekts
CN114885179B (zh) * 2022-05-23 2024-10-22 浙大城市学院 一种太赫兹时域光谱透射成像数据压缩重构方法
CN115127779B (zh) * 2022-06-16 2025-04-15 中国科学院上海光学精密机械研究所 高功率激光系统的色散测量方法

Family Cites Families (17)

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US5710430A (en) 1995-02-15 1998-01-20 Lucent Technologies Inc. Method and apparatus for terahertz imaging
US5623145A (en) 1995-02-15 1997-04-22 Lucent Technologies Inc. Method and apparatus for terahertz imaging
US5939721A (en) 1996-11-06 1999-08-17 Lucent Technologies Inc. Systems and methods for processing and analyzing terahertz waveforms
GB2359716B (en) * 2000-02-28 2002-06-12 Toshiba Res Europ Ltd An imaging apparatus and method
JP4476462B2 (ja) 2000-03-27 2010-06-09 株式会社栃木ニコン 半導体の電気特性評価装置
JP2002096634A (ja) 2000-09-25 2002-04-02 Asahi Glass Co Ltd 取付用部材付き窓用板材の製造方法
GB2399626B (en) * 2003-03-21 2006-04-05 Teraview Ltd Spectroscopy apparatus and associated technique
GB2405466B (en) * 2003-08-27 2006-01-25 Teraview Ltd Method and apparatus for investigating a non-planner sample
JP4721416B2 (ja) * 2005-09-05 2011-07-13 キヤノン株式会社 検体検査素子、及び検体検査装置
US7459687B2 (en) * 2006-04-06 2008-12-02 New Jersey Institute Of Technology Non-linear terahertz spectroscopy for defect density identification in high k dielectric films
JP4829669B2 (ja) * 2006-04-28 2011-12-07 キヤノン株式会社 検体情報取得装置、及び検体情報取得方法
JP5037929B2 (ja) * 2006-12-18 2012-10-03 キヤノン株式会社 テラヘルツ波を用いた対象物の情報取得装置及び方法
GB2465896B (en) 2007-01-29 2011-12-07 Teraview Ltd A pharmaceutical analysis method and apparatus
DE102007011820B4 (de) * 2007-03-12 2013-04-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum schnellen Messen von Proben mit geringem optischen Wegunterschied mittels elektromagnetischer Strahlung im Terahertz-Bereich
JP2009000465A (ja) 2007-06-20 2009-01-08 Yasuki Sonobe バッグのテーブル格納構造
CN201340905Y (zh) * 2009-01-22 2009-11-04 山东科技大学 太赫兹波带片
CN102087211B (zh) * 2010-12-08 2012-08-15 南京邮电大学 生物薄膜的太赫兹光谱分析装置及检测方法

Also Published As

Publication number Publication date
US20110267600A1 (en) 2011-11-03
JP2010156664A (ja) 2010-07-15
WO2010076874A1 (en) 2010-07-08
CN102272578A (zh) 2011-12-07
US8440971B2 (en) 2013-05-14
CN102272578B (zh) 2013-08-14

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